空间电荷限制电流法测量共混体系中空穴的迁移率

载流子迁移率测量是有机半导体材料与器件研究中的重要内容之一.以聚噻吩为电子给体材料, C₆₀的衍生物为电子受体材料,制备了一种单电荷传输器件.用空间电荷限制电流法测出了不同溶剂形成的 活性层及不同温度热处理后器件中空穴的迁移率.结果表明:器件中电荷的传输J-V曲线符合Mott-Gurney方程, 不同溶剂形成活性层中空穴具有不同的迁移率,高沸点的溶剂1, 2-二氯苯形成的活性层具有较高的空穴迁移率, 热处理有利于器件中空穴迁移率的提高.同时还进一步分析了空穴迁移率变化的原因.     

Annealed Treatment Effect in Poly（3-hexylthiophene）：Methanofullerene Solar Cells

Polymer photovoltaic devices based on poly（3-hexylthiophene） （P3HT） ： [6,6]-phenyl-C61-butyricacid methyl ester （PCBM） 1：1 weight-ratio blend are reported. The effects of various annealing treatments on the device performance are investigated. Thermal annealing shows significant improvement of the device performances. For devices at 130℃ annealing, maximum power conversion efficiency （PCE） of 3.3% and All factor up to 60.3% is achieved under air mass 1.5, 100 m W/cm^2 illumination. We discuss the effect of thermal annealing by the results of ultraviolet-visible absorption spectroscopy （UV-vis）, dark current-voltage curve, atomic force microscopy （AFM）.     

Effect of solvents on the performance and morphology of polymer photovoltaic devices

In the polymer photovoltaic devices (PVDs), the performance of devices was strongly influenced by region-regularity, number average molecular weight and casting solvents of polymers. In this work, we fabricated p–n bulk-hetero-junction PVDs based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C₆₀-butyric acid methyl ester (PCBM) using various solvents such as chloroform (CF), chlorobenzene (CB), dichlorobenzene (DCB), and mixed solvent (CF/CB, CF/DCB). Thin film of active layer with P3HT/PCBM was prepared by spin coating and thermal annealing at 150 °C with fixed thickness about 110 nm by adjusting solution concentration. The crystalline morphology and layered phase for the active layer were studied by atomic force microscopy and X-ray diffraction, respectively. We investigated the performance of solar cells according to different morphology and crystallinity of active layer by various solvent and mixed solvent.     

溶剂预处理结合热退火提升聚噻吩结晶度及其光伏性能

活性层的微观形貌在很大程度上决定了聚合物光伏器件的性能表现并依赖于制备工艺条件。为了改善薄膜内部分子排布结构并追求较高的器件光电转化效率,采用溶液法制备了基于P3HT：PCBM的聚合物太阳能电池（器件结构:ITO/PEDOT：PSS/P3HT：PCBM/Al）,通过改变器件制备流程中活性层退火处理工艺,研究了热退火、溶剂退火以及溶剂预处理结合热处理的双重退火对聚合物太阳电池性能的影响。研究发现:双重退火的光伏器件的各项性能参数均优于单一退火处理器件,获得了3.25%的光电转化效率。原子力显微镜及X射线衍射仪的表征结果进一步证明:双重退火处理能够在促进聚合物给体良好有序结晶的同时保证共混组分适度地相分离,从而有利于光生激子的解离以及载流子的传输。     

Programming resistive switching memory by a charged capacitor

The performances of bulk-heterojunction (BHJ) solar cells are investigated for time-dependent thermal annealing with different morphology evolution scales, having special consideration for the diffusion and aggregation of fullerene derivative molecules based on blends of poly(3-hexylthiophene):[6,6]-phenyl-C₆₁-butyric acid methyl ester (P3HT:PCBM). Meaningfully, rapid formation of dot-like and needle-like crystalline PCBM structures of a few micrometers up to 60 μm in size is obtained with thermal annealing treatment from 2 to 15 min, which dynamically reflects a fast process of PCBM molecule and cluster aggregation. Upon ultrasonic-assisted processing and annealing treatment, the scale of P3HT crystals is drastically increased in view of X-ray diffraction (XRD) patterns, leading to a high hole mobility. And, the P3HT domains can be gradually converted into larger P3HT crystals approved by the decreased full width at half-maximum in the XRD patterns. Corresponding current–voltage curves are measured in quantity and we propose a model to explain the effect of the crystalline degree of P3HT domains and aggregation of PCBM molecules and clusters on the phase segregation, expressing a viewpoint towards high performance of BHJ solar cells.     

不同环境压强下溶剂退火对聚合物太阳能电池性能的影响

通过改变溶剂退火时的环境压强控制溶剂的蒸发速率,在不同压强下进行加压溶剂退火制备了基于聚-3己基噻吩:富勒烯衍生物(P3HT:PCBM)的体异质结聚合物太阳能电池。X射线衍射(XRD)、紫外-可见吸收光谱(UV-Vis)以及原子力显微镜(AFM)的测试结果表明,增大溶剂退火的环境气压改善了薄膜的结晶度,增强了有源层的光吸收,提高了P3HT和PCBM的相分离程度,更有利于激子的解离和载流子传输。与在常压下溶剂退火相比,在2.0 MPa压强下对有源层进行溶剂退火的器件的光电转换效率提高了29%,达到了3.69%。     

退火处理ZnPc(OC_8H_(17)OPyCH_3I)_8阴极缓冲层的倒置有机太阳能电池

制备了以Zn Pc(OC8H17OPy CH3I)8为阴极缓冲层、P3HT∶PCBM为有源层的有机太阳能电池。对阴极缓冲层Zn Pc(OC8H17OPy CH3I)8薄膜分别进行了溶剂蒸汽退火和过渡舱惰性气体流退火处理,并利用原子力显微镜(AFM)对缓冲层表面形貌进行了表征。结果表明:这两种退火方法都使缓冲层形貌得以改善。电池效率从2.14%提高到3.76%,电流密度从8.12 m A/cm2提高到10.71 m A/cm2,填充因子从0.45提高到0.61。与传统器件相比,退火处理的阴极缓冲层器件的稳定性也得到了改善,器件寿命延长了1.4倍。这种简单阴极界面处理方法为改善聚合物太阳能电池性能提供了有效途径。     

The improvement of bulk-heterojunction order in polymer photovoltaic device

The blend morphology and vertical arrangement are critical to the performance of organic bulk-heterojunction photovoltaic devices.In the present paper,the authors proposed a new annealing method that controls the blend morphology and vertical arrangement of two materials by means of simultaneously applying external electrical field and violet irradiation on the active layer of poly(3-hexylthiophene) (P3HT) and -phenyl C61-butyric acid methyl ester(PCBM) during annealing process.By using this annealing metho...     

热处理对不同溶剂制备的共混体系太阳电池性能影响

本文以poly(3-hexylthiophene) (P3HT)为电子给体材料, -phenyl C₆₁-butyric acid methyl ester (PCBM)为电子受体材料, 制备出不同溶剂形成的共混体系太阳电池.从薄膜的紫外—可见吸收光谱(UV-vis)、光致发光谱(PL)、原子力表面图形(AFM)等方面,分析了热处理对不同溶剂制备的共混体系太阳电池性能的影响.结果表明较高沸点的溶剂有利于P3HT:PCBM共混体系中P3HT的有序化排列,薄膜的紫外—可见吸收和光致发光增 关键词： 热处理 不同溶剂 太阳电池 性能     

基于PBDT-TT-F∶PCBM体异质结红光探测器的光电特性

采用旋涂工艺与蒸镀工艺结合的方法制备了PBDT-TT-F∶PCBM体异质结红光探测器,研究了活性层的混合比例和厚度、退火温度等因素对器件光电特性的影响。实验结果表明:活性层PBDT-TT-F∶PCBM的混合质量比为1∶1.5、厚度为150 nm、退火温度为100℃、时间为15 min时制备的器件性能最佳,在波长为650nm、功率为6.6 m W/cm~2的光照下,探测器光电流密度可达到0.85 m A/cm~2,光响应度达到128 m A/W。     

退火气压对于P3HT∶PCBM微观形貌及光伏性能的影响

通过精确设定不同的退火环境气压,实现对P3HT(Poly(3-hexylthiophene -2,5-diyl)与PCBM([6,6]-Phenyl C₆₁ butyric acid methyl ester)体系中聚噻吩结晶度以及共混相分离程度的控制,并在此基础上制备了结构为ITO/PEDOT∶PSS/P3HT∶PCBM/Al的正型光伏器件。在允许的压强设定范围内,器件各项性能参数均随退火环境压强的增大表现出先升高后下降的变化规律,并统一于气压设定为1 500 mTorr时获得最大值。从活性层的紫外-可见(UV-Vis)吸收光谱中发现P3HT在510 nm吸收峰以及550和600 nm肩峰附近的吸收强度随退火气压升高而增大,在气压为1 500 mTorr时达到最高,吸收强度的提升源于聚合物分子π—π堆叠的增加。原子力显微镜(AFM)进一步分析结果表明,高气压环境(>1 000 mTorr)能够促进P3HT∶PCBM共混组分在退火过程中形成较大程度的相分离,而当环境压强合适时(1 500 mTorr)适度的相分离利于聚合物形成良好有序结晶,从而能够提升活性层内部载流子传输能力,保证较高的短路电流与填充因子,制备的器件也因此表现出良好的光伏性能,光电转化效率达到3.56%。     

Enhanced power efficiency of ZnO based organic/inorganic solar cells by surface modification

We present series of strategies to enhance efficiency of ZnO nanorods based organic/inorganic solar cells with spin-coated P3HT:PCBM blend as active layer. The performance of the as-fabricated devices is improved by controlling the size of ZnO nanorods, annealing temperature and time of active layer, surface modification of ZnO with PSBTBT. Optimized device of ITO/ZnO nanorod/P3HT:PCBM/Ag device with PSBTBT surface modification and air exposure reaches an efficiency of 2.02% with a short-circuit current density, open-circuit voltage and fill factor of 13.23 mA cm⁻², 0.547 V and 28%, respectively, under AM 1.5 irradiation of 100 mW m⁻², the increase in efficiency is 7-fold of the PSBTBT surface modified ITO/ZnO nanorods/P3HT:PCBM/Ag device compared with the unmodified one, which is own to the increased interface contact, expanded light absorption, tailored band alignment attributed to PSBTBT. We found exposure to air and surface modification is crucial to improve the device performance, and we discussed the mechanisms that affect the performance of the devices in detail.     

Plasmon enhanced light absorption in bulk heterojunction organic solar cells

Silver nanospheres (Ag NSs) buffer layers were introduced via a solution casting process to enhance the light absorption in poly (3‐hexylthiophene) (P3HT) and [6,6]‐phenyl‐C61 butyric acid methyl ester (PCBM) bulk heterojunction organic solar cells. These Ag NSs, as surface plasmons, could increase the optical electric field in the photoactive layer whilst simultaneously improving the light scattering. As a result, this buffer layer improves the light absorption of P3HT:PCBM blend and consequently improves the external quantum efficiency (EQE) of organic solar cells. In this work, different sizes of Ag NSs plasmon‐enhanced layer were investigated, with the aim of optimizing the performance of devices. UV‐vis spectrometer measurement demonstrates that the total optical absorption of P3HT:PCBM blend films in the spectral range of 350–650 nm is increased by ～4 and 6% with incorporation of the 20 and 40 nm Ag NSs, respectively. The J_sc was shown to increase by ～21 and 24% for 20 and 40 nm Ag NSs, respectively. This is due to the extra photogenerated excitons by the plasmonic resonance of Ag NSs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Composition-dependent phase separation effects of organic solar cells using P3HT:PCBM as active layer and chromium oxide as hole transporting layer

Phase separation of the poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) active layer (ATL) was investigated by varying their relative ratio in the organic solar cells (OSCs). With the help of the UV/visible spectrophotometer, optical microscopy and scanning electron microscope, we found that the cluster of PCBM at the interface or surface was affected by Al cathode, the composition of the blends and thermal annealing. The disc-like shape crystals of PCBM substituted for the needle-like ones at higher PCBM compositions at the ATL/Al interface, which led to stronger contacts and bigger contact area. It could make short circuit current density increase, but may affect the blend morphology and result in parallel resistance and open circuit voltage decreased with the PCBM ratio increasing from 40 to 60%. The microstructure of the P3HT:PCBM ATL, determined by the composition dependent phase separation, supported the optimized performance of the OSCs with the composition of 40-50% PCBM.     

Improved performance of polymer solar cells by using inorganic,organic, and doped cathode buffer layers

The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester(P3HT:PCBM) polymer solar cell, we studied the effect of the cathode buffer layer(CBL) between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode(OLED) were employed as the CBL in the P3HT:PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs_2CO_3, bathophenanthroline(Bphen), and 8-hydroxyquinolatolithium(Liq) can be used as CBL to efficiently improve the device performance of the P3HT:PCBM polymer solar cells. The P3HT:PCBM devices employed various CBLs possess power conversion efficiencies(PCEs) of 3.0%–3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen:Cs_2CO_3 and Bphen:Liq as the CBL, the PCE of the P3HT:PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL.     

Plasmonic effects and the morphology changes on the active material P3HT:PCBM used in polymer solar cells using Raman spectroscopy

There is no consensus yet that the enhancement effects of plasmonic device are predominantly caused by plasmonic effects or induced morphology changes in the optoelectronic `materials. Herein, we present a detailed Raman characterization of a typical organic P3HT:PCBM system comprising silver nanowires (Ag NWs) with different size, which can simultaneously study the plasmonic effects and the morphology changes. The direct comparison of the Raman spectra of non‐annealed and annealed samples indicates that the morphology of plasmonic samples has changed before annealing and the morphology of plasmonic samples and reference sample after annealing is not distinguishable. This indicates that the interaction between P3HT and Ag NWs with different size can be explained by plasmonic effects after annealing. Moreover, in‐situ Raman spectroscopy is used to study the morphology changes in plasmonic samples with different diameters of Ag NWs during heating process. This method can distinguish the plasmonic effects and morphology changes of plasmonic device. Copyright © 2016 John Wiley & Sons, Ltd.     

混合溶剂对P3HT:PCBM基太阳能电池的影响

以poly(3-hexylthiophene)(P3HT)为电子给体材料,[6,6]-phenyl-C60-butyric acid methyl ester (PCBM)为电子受体材料,制备了纯氯苯(CB)溶剂、纯氯仿(CF)溶剂和氯苯/氯仿(CB/CF)不同比例混合溶剂的共混体系太阳能电池.研究了不同溶剂及不同比例混合的混合溶剂对电池性能的影响.结果表明:以CB/CF(3/1)为溶剂制备的器件,紫外可见吸收光谱和器件外量子效率曲线显示出红移现象,原子力显微图表明P3HT和PCBM间形成良好的相分离结构.在100 mW/cm2强度光照射下,其开路电压Voc为0.61 V短路电流密度Jsc为9mA/cm2,填充因子FF为57.9％,能量转换效率PCE为3.2％.     

掺杂石墨烯量子点对P3HT:PCBM太阳能电池性能的影响

为研究掺杂石墨烯量子点(GQDs)对聚合物电池的影响,采用溶剂热法制备了GQDs,掺杂到聚3-己基噻吩和富勒烯衍生物(P3HT∶PCBM)中作光敏层制备了聚合物太阳能电池。掺杂不同浓度的GQDs后,聚合物电池的开路电压和填充因子都比未掺杂器件高。GQDs掺杂质量分数为0.15%时,形成的掺杂薄膜平整、均匀,填充因子提高了17.42%。GQDs经还原后,随还原时间的延长,填充因子FF增大。到45 min时,电池的FF基本稳定,从31.57%提高至40.80%,提高了29.24%。退火后,获得了最佳的掺杂GQDs的聚合物太阳能电池,开路电压Voc为0.54 V,填充因子FF为55.56%,光电转换效率为0.75%。     

Understanding the synergistic effect of mixed solvent annealing on perovskite film formation

Morphology control of perovskite films is of critical importance for high-performance photovoltaic devices. Although solvent vapor annealing (SVA) treatment has been widely used to improve the film quality efficiently, the detailed mechanism of film growth is still under construction, and there is still no consensus on the selection of solvents and volume for further optimization. Here, a series of solvents (DMF, DMSO, mixed DMF/DMSO) were opted for exploring their impact on fundamental structural and physical properties of perovskite films and the performance of corresponding devices. Mixed solvent SVA treatment resulted in unique benefits that integrated the advantages of each solvent, generating a champion device efficiency of 19.76% with improved humidity and thermal stability. The crystallization mechanism was constructed by conducting grazing-incidence wide-angle x-ray diffraction (GIWAXS) characterizations, showing that dissolution and recrystallization dominated the film formation. A proper choice of solvent and its volume balancing the two processes thus afforded the desired perovskite film. This study reveals the underlying process of film formation, paving the way to producing energy-harvesting materials in a controlled manner towards energy-efficient and stable perovskite-based devices.     

Effects of optical interference and annealing on the performance of poly （3-hexylthiophene）： fullerene based solar cells

<正>In this paper,the effects of optical interference and annealing on the performance of P3HT:PCBM based organic solar cells are studied in detail.Due to the optical interference effect,short circuit current density(J_SC) shows obvious oscillatory behaviour with the variation of active layer thickness.With the help of the simulated results,the devices are optimized around the first two optical interference peaks.It is found that the optimized thicknesses are 80 and 208 nm.The study on the effect of annealing on the performance indicates that post-annealing is more favourable than pre-annealing.Based on post-annealing,different annealing temperatures are tested.The optimized annealing condition is 160℃for 10 min in a nitrogen atmosphere.The device shows that the open circuit voltage V-（OC） achieves about 0.65V and the power conversion efficiency is as high as 4.0%around the second interference peak.