Search for minimal quantum group SUq(2) gauge field theory

Different possibilities for the introduction of quantum group gauge fields are discussed. The case of the quantum group SU_q(2) is considered in more detail. We seek for a construction of the quantum group gauge fields which possesses a minimal set of usual c-number fields. It turns out that in this construction the components of the quantum group gauge field take values in the quantum Euclidean space.     

On the chromatic aberration of magnetic lenses with a field distribution in the form of an inverse power low (B(z) ∝ z)

The chromatic aberration of magnetic lenses with the field distribution in the forms of inverse law have been studied by analytical and digital methods. These aberrations can be expressed in terms of Bessel function of fraction order. Analytical expressions for chromatic aberration coefficients of the spherical field model, which is useful for the study of single-pole magnetic lenses, are given.     

Luminescence and crystal field analysis of Eu in Eu[Co(CN)6]·4H2O

The vibrational spectra of Eu[Co(CN)₆]·4H₂O and luminescence spectra of Eu³⁺ in this compound, using 355 nm excitation at temperatures down to 10 K, have been assigned. A clear distinction is made between the n=5 and 4 members of the Ln[M(CN)₆]·nH₂O series from the vibrational spectra. The electronic spectra show prominent vibronic structures, particularly for the ⁵D₀→⁷F₂ sideband. A resonance occurs between the transitions ⁵D₀→⁷F₁(III) and ⁵D₀→⁷F₀+ν(Eu−N). A crystal field analysis of the derived energy data set is presented for Eu³⁺ in eight coordination geometry.     

Effects of electric field annealing on the interface diffusion of Cu/Ta/Si stacks

In the present paper, the effects of electric field annealing on interface diffusion of Cu/Ta/Si stacks were studied by means of XRD, XPS and TEM. The barrier property of Ta films was evaluated based on the diffusion of Cu atoms. It was found that the external electric field accelerates the diffusion of Cu atoms through Cu/Ta/Si interfaces during annealing. With the increment of annealing temperature, the effect of the electric field upon the atomic diffusion becomes more significant. The mechanism of accelerated interface diffusion is suggested and the failure of Ta barrier layer is discussed based on the mobility of vacancies and Cu atoms inside Cu/Ta/Si stacks caused by the electric field.     

High resistance modulation by the electric field based on La_(0.9)Sr_(0.1)MnO_3/SrTiO_3/Si structure

A field-effect configuration based on La0.9Sr0.1MnO3/SrTiO3/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La0.9Sr0.1MnO3/SrTiO3/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×107% and 2.6×106% when VDS are -2 and -6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are wort...     

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional （quasi-2D） model, the current-voltage （l-V） characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors （HFETs） with different gate lengths are simulated based on the measured capacitance-voltage （C-V） characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas （2DEG） with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.     

Electric field dependence of topography in ferroelectric P(VDF/TrFE) films

The effect of electric fields on the topography and structures in P(VDF/TrFE) ferroelectric films was studied. The morphological changes after poling treatment at 25 °C, from previously chrysanthemum-like structures to regular and parallel slug-like domains, were observed by scanning probe microscope. Poling process at higher temperature induced even greater morphological changes. Imaging of local electrical properties showed that these changes could not be attributed to the influence of local charges injected into film surface during poling process. It was believed that this new morphology came from the reform of film structures induced by electric fields.     

外应力场下铁磁/反铁磁双层膜系统的铁磁共振性质

从系统能量出发，采用Smith和Beljers理论方法研究了铁磁/反铁磁双层膜系统在外应力场下的铁磁共振现象.本模型中铁磁薄层具有单轴磁晶各向异性和立方磁晶各向异性，而反铁磁层非常薄因而其能量可忽略.推导出了该系统的铁磁共振频率和频谱宽度的解析式.结果表明：外应力场仅在低磁场下对具有立方磁晶各向异性系统的铁磁共振有影响，且区分弱磁场和强磁场的临界场依赖于外应力场的方向. 关键词： 铁磁/反铁磁双层膜 交换偏置 铁磁共振 应力场     

EPR evidence of local lattice mode in K3H(SO4)2 and Rb3H(SO4)2 fast-proton conductors

The observation of an anomalous temperature dependence of Mn²⁺ EPR spectra linewidth and nonaxial crystal-field parameter in K₃H(SO₄)₂ and Rb₃H(SO₄)₂ allows one to suggest the presence of “local mode” predicted by Yamada (Ferroelectrics 170 (1995) 23). The activation energy for this kind of excitation was found and equals 11.3 (0.5) and 7.4 (0.3) meV for Mn²⁺ doped K₃H(SO₄)₂ and Rb₃H(SO₄)₂, respectively.     

铁磁/反铁磁双层膜中冷却场对交换偏置场的影响

用铁磁畴壁模型研究了非补偿界面铁磁/反铁磁双层膜中冷却场（包括大小及其方向）对交换偏置场h_E的影响.结果表明：当冷却场的方向与反铁磁层磁易轴一致时,h_E大小与冷却场大小无关.当冷却场的方向偏离磁易轴时,h_E的大小随偏离角度的增大有缓慢的改变,但当冷却场的方向偏离到临界角度γ_c处,h_E的大小发生突变,其γ_c的大小随冷却场的增大而增大.特别是当冷却场的偏离角度大于γ_c后,h_E出现由负转正的现象,其转变点还与冷却场的大小有关.另外,h_E与铁磁层原子层数N_F的关系会发生由h_E∝N^-1_F向h_E∝N^-λ_F的转变,其中λ>1.其发生转变的条件与N_F、冷却场大小和方向密切相关. 关键词： 铁磁/反铁磁双层膜 交换偏置 冷却场     

外应力场下铁磁/反铁磁双层膜系统中的自旋波

采用自由能极小的方法研究了铁磁/反铁磁双层膜系统在外应力场下的一致进动自旋波性质，即铁磁共振现象. 本模型中铁磁层很薄可看成单畴结构，但具有单轴磁晶各向异性和立方磁晶各向异性；而反铁磁层仅具有单轴磁晶各向异性，但其厚度趋于半无穷. 推导出了该系统的铁磁共振频率和频谱宽度的解析式. 结果表明，外应力场和界面交换耦合或反铁磁磁强度仅在弱磁场下对系统的铁磁共振有影响，且系统的铁磁共振行为按磁场强度可分为两支，其区分弱磁场和强磁场的临界场依赖于外应力场的方向. 另一方面，应力场方向的改变可借助于反铁磁层磁畴变化对铁磁层磁晶各向异性轴有影响. 关键词： 铁磁/反铁磁双层膜 界面耦合强度 铁磁共振 应力场     

外应力场下铁磁/反铁磁双层膜系统中的交换偏置

采用自由能极小的方法研究了铁磁/反铁磁双层膜系统在外应力场下的交换各向异性.本模型中铁磁层具有单轴磁晶各向异性和立方磁晶各向异性，而反铁磁层仅具有单轴磁晶各向异性，但其厚度趋于半无穷.理论上解析地给出了系统的等效交换偏置和钉扎角(它显示了反铁磁层对铁磁层磁化的钉扎作用)与外应力场之间的关系.数值计算表明：系统的等效交换偏置与外磁场的方向有关，而与其大小无关；然而外应力场的大小和方向均对系统的等效交换偏置有影响，其根源在于外应力场的大小和方向都影响着钉扎角. 关键词： 铁磁/反铁磁双层膜 交换偏置 钉扎角 应力场     

Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.     

Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

In this paper, a novel Al Ga N/Ga N HEMT with a Schottky drain and a compound field plate(SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate(CFP) consists of a drain field plate(DFP) and several floating field plates(FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain(SD HEMT) and the HEMT with a Schottky drain and a DFP(SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT.Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in Al Ga N/Ga N HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs.     

The photomagneton B(3) and longitudinal ghost field B(3) of electromagnetism

The concepts are introduced of the longitudinal ghost fieldB ⁽³⁾ and photomagnetonB ⁽³⁾) of electromagnetism:B ⁽³⁾ = B⁽³⁾ =B⁽⁰⁾/, whereB ⁽⁰⁾ is the magnetic flux density amplitude and the angular momentum operator of a photon beam. The major implication is that the individual photon hasthree degrees of polarization, the longitudinal one being accompanied by the ghost fieldB ⁽³⁾ which has no energy or linear momentum, and is generated from the angular momentum of the photon.     

Three dimensional active sound field cancellation

In this paper, a novel method for Three dimensional active sound field cancellation is proposed. The optimum sound cancellations in different situations may be obtained. An array whose elements lie on a set of rings placed on the surface of a scattering object is considered as the device. It is quite possible to cancel the scattered sound field to any arbitrary level over either the whole space or a partial area of interest, as long as the number of the array elements is sufficient.     

Random crystal field effects for spin-3/2 Blume-Capel model

The effects of crystal field (Δ) which is randomly turned on with probability p or turned off with probability 1−p on the sites of the Bethe lattice are investigated to study the critical behavior of the spin-3/2 Blume-Capel model. The order-parameters are obtained in terms of the recursion relations and then the possible phase diagrams are calculated at finite temperatures for given system parameters p, Δ and coordination numbers z=3, 4, 5 and 6. It was found that the phase diagrams change drastically for given probability and randomness. The first-order phase transitions are only found for higher p values and the lines of which get shorter and eventually disappear as p decreases. The critical lines do not present any qualitative differences with z, but they are seen at higher temperatures for higher z.     

Various topological excitations in the SO (4) gauge field in higher dimensions

Following the original analysis of Zhang and Hu for the 4-dimensional generalization of Quantum Hall effect, there has been much work from different viewpoints on the higher dimensional condensed matter systems. In this paper, we discuss three kinds of topological excitations in the SO (4) gauge field of condensed matter systems in 4-dimension—the instantons and anti-instantons, the ’t Hooft-Polyakov monopoles, and the 2-membranes. Using the ?-mapping topological theory, it is revealed that there are 4-, 3-, and 2-dimensional topological currents inhering in the SO (4) gauge field, and the above three kinds of excitations can be directly and explicitly derived from these three kinds of currents, respectively. Moreover, it is shown that the topological charges of these excitations are characterized by the Hopf indices and Brouwer degrees of ?-mapping.     

Spectroscopic and crystal field studies of (Ce,Gd)Sc3 (BO3)4:Cr crystals

Complex spectroscopic studies of (Ce,Gd)Sc₃(BO₃)₄:Cr³⁺ (CSB:Cr³⁺) crystals (crystal growth, absorption and luminescence spectroscopy, crystal field calculations, analysis of the radiative and non-radiative decays) are presented. The main results of the paper include calculations of crystal field parameters and energy level scheme for Cr³⁺ at distorted octahedral Sc³⁺ sites, evaluation of the Huang-Rhys factor, effective phonon frequency, zero-phonon line energy, and parameters of radiative and non-radiative decays. Comparison with experimental results and other literature data is discussed. A very unusual value of the frequency factor (related to the non-radiative processes) is explained as being due to heterodesmic nature of chemical bonds in the CSB crystal. Cr³⁺-doped CSB crystals (with Cr³⁺ concentration 5.1×10¹⁹ cm⁻³ or 1%) are suggested as promising candidates for potential applications as active media for solid state lasers.     

SU (3) Chern-Simons field theory in three-manifolds

We present the solution of the non-Abelian SU (3) Chern-Simons field theory defined in a generic three-manifold which is closed, connected and orientable. The surgery rules, which permit us to solve the theory, are derived and several examples of vacuum expectation values of Wilson line operators are computed. The three-manifold invariant associated with the non-Abelian SU (3) Chern-Simons model is defined and its values are computed for various three-manifolds.