C,igahertz longitudinal acoustic phonons originating from ultrafast ligand field transitions in hematite thin films

The creation and propagation of longitudinal acoustic phonons （LAPs） in high quality hematite thin films （α-Fe203） epitaxially grown on different substrates （BaTiO3, SrTiO3, and LaAlO3） are investigated using the femtosecond pump- probe technique. Transient reflection measurements （AR/R） indicate the photo-excited electron dynamics, and the initial decay less than 1 ps and the slow decay of -500 ps are attributed to the electron-LO phonon coupling and electron-hole nonradiative recombination, respectively. LAPs in α-Fe2O3 film can be created by ultrafast excitation of the ligand field state, such as the ligand field transitions under 800-nm excitation as well as the ligand to metal charge-transfer with 400- nm excitation. The strain modulations of the sound velocity and the out-of-plane elastic properties are demonstrated in α-Fe2O3 film on different substrates.     

Subsolidus phase relation in the Bi2O3-Fe203-La2O3 system

Bismuth-containing semiconductor material is a hot topic in photocatalysts because of its effective absorption under the visible light. In this paper, we expect to explore a new bismuth-based photocatalyst by studying the subsolidus phase relations of the Bi2O3-Fe2O3-La2O3 system. The X-ray diffraction data shows that in this ternary system the ternary compound does not exist, while seven binary compounds （including one solid solution series Bi1-xLaxO1.5 with 0.167 〈 x 〈 0.339） are obtained and eight compatibility triangles are determined.     

Microwave absorption properties of a double-layer absorber based on nanocomposite BaFe12O19/α-Fe and nanocrystalline α-Fe microfibers

The nanocomposite BaFe12O19/α-Fe and nanocrystalline α-Fe microfibers with diameters of 1–5 μm, high aspect ratios and large specific areas are prepared by the citrate gel transformation and reduction process. The nanocomposite BaFe12O19/α-Fe microfibers show some exchange–coupling interactions largely arising from the magnetization hard(BaFe12O19) and soft(α-Fe) nanoparticles. For the microwave absorptions, the double-layer structures consisting of the nanocomposite BaFe12O19/α-Fe and α-Fe microfibers each exhibit a wide band and strong absorption behavior. When the nanocomposite BaFe12O19/α-Fe microfibers are used as a matching layer of 2.3 mm in thickness and α-Fe microfibers as an absorbing layer of 1.2 mm in thickness, the optimal reflection loss(RL) achieves-47 dB at 15.6 GHz, the absorption bandwidth is about 12.7 GHz ranging from 5.3 to 18 GHz, exceeding-20 dB, which covers 72.5% C-band(4.2–8.2 GHz)and whole X-band(8.2–12.4 GHz) and Ku-band(12.4–18 GHz). The enhanced absorption properties of these double-layer absorbers are mainly ascribed to the improvement in impedance matching ability and microwave multi-reflection largely resulting from the dipolar polarization, interfacial polarization, exchange–coupling interaction, and small size effect.     

Investigation of a 4H-SiC metal-insulationsemiconductor structure with an A1203/SiO2 stacked dielectric

Atomic layer deposited （ALD） Al2O3/dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8° off-axis 4H-SiC （0001） epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor （MIS） capacitors, respectively with different gate dielectric stacks （Al2O3/SiO2, Al2O3, and SiO2） are fabricated and compared with each other. The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field （≥12 MV/cm） comparable to SiO2, and a relatively low gate leakage current of 1 × 10-7 A/cm2 at an electric field of 4 MV/cm comparable to Al2O3. The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating a less effective charge and slow-trap density near the interface.     

Fabrication and properties of high performance YBa_2Cu_3O_(7-δ) radio frequency SQUIDs with step-edge Josephson junctions

We describe the fabrication of high performance YBa2Cu3O7-δ（YBCO） radio frequency（RF） superconducting quantum interference devices（SQUIDs）, which were prepared on 5 mm×5 mm LaAlO3（LAO） substrates by employing stepedge junctions（SEJs） and in flip-chip configuration with 12 mm×12 mm resonators. The step in the substrate was produced by Ar ion etching with step angles ranging from 47°to 61°, which is steep enough to ensure the formation of grain boundaries（GBs） at the step edges. The YBCO film was deposited using the pulsed laser deposition（PLD） technique with a film thickness half of the height of the substrate step. The inductance of the SQUID washer was designed to be about 157 pH.Under these circumstances, high performance YBCO RF SQUIDs were successfully fabricated with a typical flux-voltage transfer ratio of 83 mV/Φ0, a white flux noise of 29 μΦ0/（Hz）^1/2, and the magnetic field sensitivity as high as 80 fT/（Hz）^1/2.These devices have been applied in magnetocardiography and geological surveys.     

Laser-induced voltage effects in CaaCoaO9 thin films on tilted LaAlO3（001） substrates grown by chemical solution deposition

Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10°tilted LaAIO3 （001） substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, opemcircuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions.     

Effect of alumina thickness on Al_2O_3/InP interface with post deposition annealing in oxygen ambient

In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing （PDA） in the oxygen ambient is studied. Atomic layer deposited （ALD） Al2O3 films with four different thickness values （5 nm, 7 nm, 9 nm, 11 rim） are deposited on InP substrates. The capacitance-voltage （C-V） measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy （XPS） data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface.     

Precursor evolution and growth mechanism of BTO/YBCO films by TFA–MOD process

In this study, BaTiO3 （BTO）-doped YBCO films are prepared on LaA103 （100） single-crystal substrates by metal- organic decomposition （MOD） using trifluoroacetate （TFA） precursor solutions. The critical current density （Jc） of BTO/YBCO film is as high as 10 MA/cm2 （77 K, 0 T）. The BTO peak is found in the X-ray diffraction （XRD） pattern of a final YBCO superconductivity film. Moreover, a comprehensive study of the precursor evolution is conducted mainly by X-ray analysis and μ-Raman spectroscopy. It is found that the TFA begins to decompose at the beginning of the thermal process, and then further decomposes as temperature increases, and at 700 ℃ BTO nanoparticles begin to appear. It sug- gests that the YBCO film embedded with BTO nanoparticles, whose critical current density （Jc） is enhanced, is successfully prepared by an easily scalable chemical solution deposition technique.     

Enhancing visible-light photocatalytic activity of α-Bi2O3 via non-metal N and S doping

In recent years, some important research indicated that the visible-light activity of photocatalysts could be enhanced via incorporating p-block non-metal elements into the lattice. In this paper, we investigated the electronic structures of pure and different non-metal （C, N, S, F, Cl, and Br） doped α-Bi2O3 using first-principles calculations based on the density functional theory. The band structures, the electronic densities of states, and the effective masses of electrons and holes for doped α-Bi2O3 were obtained and analyzed. The N and S dopings narrowed the band gap and reduced the effective mass of the carriers, which are beneficial for the photocatalytic performance. The theoretical predication was further confirmed by the experimental results.     

α-Fe_2O_3纳米粒子Morin相变的Raman光谱研究

本文首次用Raman光谱法研究了粒子尺寸和Co2 +包附对α-Fe2 O3纳米粒子Morin相变温度TM的影响机制。测量结果显示纳米粒子α -Fe2 O3的振动模相对大块样品发生了红移和宽化 ,粒子愈小红移和宽化愈显著。表明表面Fe3+离子与配位氧离子的键距增大 ,键长呈从体相Fe-O键长过渡到表面Fe -O键长的某种分布。这种小尺寸引起的键长改变导致α -Fe2 O3粒子的单离子各向异性能减小 ,因此降低了样品的TM。分析显示Co2 +包附导致α -Fe2 O3粒子TM 的大幅下降可能是由单离子各向异性的减小和Co2 +与Fe3+之间的磁偶极子相互作用各向异性共同作用的结果     

简单的方法制备°-Fe2O3纳米粒子及其磁性质和电化学性质

报道了制备磁性Fe2O3纳米粒子的一种简单易行的方法．利用部分还原共沉淀法， 以Na2S2O4作为还原剂， 用FeCl3先制备出Fe2O3纳米微粒， 再在空气中直接煅烧， 成功地制备出粒径较均匀(约13 nm)的磁性Fe2O3微粒． 实验发现Na2S2O4在部分还原共沉淀法中起到了去氧剂兼还原剂的特殊作用．研究表明， 样品在室温下具有铁磁性， 其饱和磁化强度和矫顽力分别为70 emu/g和164 Oe； 产物具有好的电化学性质，在3.0?0.3 V(相对于金属锂)、0.2 mA/cm2时，样品的首次放电容量可达到933 mAh/g．同时还讨论了放电过程中金属锂与Fe2O3的反应机理．     

Increased surface spin stability in γ-Fe2O3 nanoparticles with a Cu shell

γ-Fe(2)O(3) nanoparticles were coated with a Cu shell in situ during synthesis. An interfacial monolayer of CuO in the Cu-coated γ-Fe(2)O(3) nanoparticles was discovered that stabilized the disordered surface spins of γ-Fe(2)O(3) nanoparticles. Element-specific x-ray absorption spectroscopy at the L-edges for Cu and Fe indicated the magnetic moment of the Cu in the shell interacted with the γ-Fe(2)O(3) nanoparticle's surface magnetic moments. This exchange interaction between the Fe and Cu at the interface permitted an overall Cu moment in CuO (an antiferromagnet typically) that altered the γ-Fe(2)O(3) nanomagnetism. Increasing the Cu shell thickness also increased the total Fe magnetism of the nanoparticles.     

The transverse laser induced thermoelectric voltages in step flow growth （1- x）PD（Mg1/3Nb2/3）O3-xPbTiO3 thin films

This paper reports that the transverse laser induced thermoelectric voltages （LITV） axe observed for the first time in the step flow growth （1- x）PD（Mg1/3Nb2/3）O3-xPbTiO3 （PMN-PT, x = 0.20, 0.33, 0.50） thin films deposited on vicinal-cut strontium titanate single crystal substrates. Because lead magnesium niobate-lead titanate is a solid solution of lead magnesium niobate （PMN） and lead titanate （PT）, there are two types of signals. One is wide with a time response of a microsecond, and the other superimposed with the wide signal is narrow with a time response of a nanosecond. The transverse LITV signals depend on the ratio of PMN to PT drastically. Under the irradiation of 28-ns pulsed KrF excimer laser with the 248-nm wavelength, the largest induced voltage is observed in the 0.50Pb（Mg1/3Nb2/3）O3-0.50 PbTiO3 films. Moreover, the effects of film thickness, substrates, and tilt angles of substrates are also investigated.     

TiO_2对α-Fe_2O_3纳米微粒拉曼散射效应的影响

选取α Fe2O3和TiO2研究一种氧化物对另一种氧化物的拉曼散射效应。采用Sol gel方法制备纳米α Fe2O3/TiO2复合微粒,α Fe2O3粒径及含量分别为20nm、150nm和3%、6%、12%。制备过程中调节水解时的pH值和热处理温度,得到掺杂α Fe2O3粒子的不同晶型的TiO2纳米颗粒。Raman测量结果显示,α Fe2O3粒径越小、含量越高,TiO2对其散射效应的影响越大。不同的TiO2晶型对α Fe2O3纳米粒子的拉曼增强效应也不同。锐钛矿型及金红石型TiO2对α Fe2O3有一定的拉曼增强作用,当水解pH值较小时,得到板钛矿型TiO2,由于部分板钛矿型TiO2振动声子模的峰位与α Fe2O3的重叠,所以尚难观察它对α Fe2O3的拉曼增强效应。     

Growth, structural, and magnetic properties of iron nitride thin films deposited by dc magnetron sputtering

FeN thin films were deposited on glass substrates by dc magnetron sputtering at different Ar/N₂ discharges. The composition, structure and the surface morphology of the films were characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and atomic force microscopy (AFM). Films deposited at different nitrogen pressures exhibited different structures with different nitrogen contents, and the surface roughness depended on the mechanism of the film growth. Saturation magnetization and coercivity of all films were determined using superconducting quantum interference device, which showed that if N₂/(Ar+N₂) flow ratio was equal to or larger than 30% the nonmagnetic single-phase γ″-FeN appeared. If N₂/(Ar+N₂) flow ratio was less than 10%, the films consisted of the mixed phases of FeN_0.056 and γ′-Fe₁₆N₂, whose saturation magnetizations were larger than that of -Fe. If N₂/(Ar+N₂) flow ratio was 10%, the phases of γ′-Fe₄N and -Fe₃N appeared, whose saturation magnetizations were lower than that of -Fe.     

Structural and physical properties of BiFeO3 thin films epitaxially grown on SrTiO3（001） and polar（111） surfaces

The influence of surface polarity on the structural properties of BiFeO3 （BFO） thin films is investigated. BFO thin films are epitaxially grown on SrTiO3 （STO） （100） and polar （111） surfaces by oxygen plasma-assisted molecular beam epitaxy. It is shown that the crystal structure, surface morphology, and defect states of BFO films grown on STO substrates with nonpolar （001） or polar （111） surfaces perform very differently. BFO/STO （001）is a fully strained tetragonal phase with orientation relationship （001）[100]BFOII（001）[100]STO, while BFO/STO （111） is a rhombohedral phase. BFO/STO （111） has rougher surface morphology and less defect states, which results in reduced leakage current and lower dielectric loss. Moreover, BFO films on both STO （001） and STO （111） are direct band oxides with similar band gaps of 2.65 eV and 2.67 eV, respectively.     

Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al_2O_3 capped Ge

We propose a modified thermal oxidation method in which an Al2O3 capping layer is used as an oxygen blocking layer （OBL） to form an ultrathin GeOx interracial layer, and obtain a superior Al2O3/GeOx/Ge gate stack. The GeOx interfacial layer is formed in oxidation reaction by oxygen passing through the Al2O3 OBL, in which theAl2O3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeOx interfacial layer would dramatically decrease as the thickness of Al2O3 OBL increases, which is beneficial to achieving an ultrathin GeOx interfacial layer to satisfy the demand for small equivalent oxide thickness （EOT）. In addition, the thickness of the GeOx interfacial layer has little influence on the passivation effect of the Al2O3/Ge interface. Ge （100） p-channel metal- oxide-semiconductor field-effect transistors （pMOSFETs） using the Al2O3/GeOx/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off （Ionloft） ratio of above 1 104, a subthreshold slope of - 120 mV/dec, and a peak hole mobility of 265 cm2/V.s are achieved.     

Surface properties of clean and Au or Pd covered hematite (α-Fe(2)O(3)) (0001)

The structure and electronic properties of different terminations of the α-Fe(2)O(3)(0001) surface were studied with spin-polarized density functional theory (DFT) and the DFT + U method accounting for the effect of strong on-site Coulomb correlations. The results for lattice relaxation, electronic and magnetic properties are presented and discussed. Though the DFT and DFT + U methods provide qualitatively very similar surface geometries they differ very much in the prediction of the electronic and magnetic properties, and the surface energetics of the clean α-Fe(2)O(3)(0001). The most stable single iron terminated (0001) surface and the oxygen-rich termination were chosen to study Au and Pd atom adsorption. The results show that both Au and Pd bind strongly to hematite surfaces and induce large changes in their geometry. The DFT + U bonding is weaker by 0.3-0.6 eV than DFT on the iron terminated surface and about 2 eV stronger on the oxygen terminated one. The binding is stronger for Pd than Au and for both adsorbates is distinctly stronger at the oxygen than at the iron terminated surface. On the iron terminated surface the adsorption binding energy per adatom increases both with Au and Pd coverage, whereas for the oxygen terminated one the opposite trend is observed.     

Study on incident laser modulation using surface micro-defects on KH2PO4 crystal

KH2PO4 crystal is a crucial optical component of inertial confinement fusion. Modulation of an incident laser by surface micro-defects will induce the growth of surface damage, which largely restricts the enhancement of the laser induced damage threshold. The modulation of an incident laser by using different kinds of surface defects are simulated by employing the three-dimensional finite-difference time-domain method. The results indicate that after the modulation of surface defects, the light intensity distribution inside the crystal is badly distorted, with the light intensity enhanced symmetrically. The relations between modulation properties and defect geometries （e.g., width, morphology, and depth of defects） are quite different for different defects. The modulation action is most obvious when the width of surface defects reaches 1.064 p-m. For defects with smooth morphology, such as spherical pits, the degree of modulation is the smallest and the light intensity distribution seems relatively uniform. The degree of modulation increases rapidly with the increase of the depth of surface defects and becomes stable when the depth reaches a critical value. The critical depth is 1.064 μm for cuboid pits and radial cracks, while for ellipsoidal pits the value depends on both the width and the length of the defects.     

晶态四硼酸锶中二价镝的发射

在室温下测量了在空气中灼烧掺杂Dy2O3的SrB3O7的发射光谱。观测到了由Dy^3 到Dy^2 氧化态的变化。经优化,当在空气中灼烧温度为650℃时为产生Dy^2 的最佳温度。在457．9nm的激发下测出了两个峰位分别位于550和660nm的宽发射带。我们认为这两个宽发射带是由Dy^2 离子由5d态向4f基态能级（^5I8）跃迁产生的。讨论了几个有益于在这种基质中还原Dy^3 离子的条件。为了实现Dy^3 离子的还原,我们还在Ar/H2(4%)气氛中制备了Dy2O3掺杂的SrB4O7比较了这种样品和在空气中所制备的样品的光学特性。本文还对标专SrB4O7还原性和稳定性的g－因子由Tm^2 的[E0(Tm^3 /Tm^2 =-2.3V]推导出Dy^2 的[E0(Dy^3 /Dy^2 )=-2.6V],但对这种还原过程的局限性尚未确定。