Temperature dependence of the rho-meson mass and width

It is shown, to leading order in the virial expansion, that unitarity of the ππ scattering amplitude implies that if the ρ-meson widthΓ _ρ(T) increases with temperature, then the ρ-meson massM _ρ(T) must also increase. The temperature dependence ofM _ρ(T) is explicitly obtained from a simple, but physically motivated, parametrization of theI=J=1 ππ scattering amplitude.     

Kondo behaviour of the solid solution (Ce1−xLax)PtGa

The solid solution (Ce_1−xLa_x)PtGa has been studied through X-ray diffraction, magnetization (σ(B)), magnetic susceptibility (χ(T)), electrical resistivity (ρ(T)), magnetoresistivity (MR) and heat capacity (C_P(T)) measurements. The Néel temperature (T_N=3.3 K) for CePtGa is lowered upon La substitution as observed from χ(T) and ρ(T) measurements. The Kondo temperature T_K as calculated from MR measurements is comparable to T_N and also decreases with La substitution. The volume dependence of T_K is in accordance with the compressible Kondo lattice model and a Doniach diagram of the results is presented. C_P(T) measurements are presented for CePtGa, Ce_0.2La_0.8PtGa and LaPtGa and the results are discussed in terms of the electronic and magnetic properties. Other features of interest are anomalies in ρ(T) and C_P(T) due to crystalline electric field effects and metamagnetism as observed in σ(B) studies for samples with 0≤x≤ 0.3.     

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.     

Effect of annealing on the magnetic and superconducting properties of single-crystalline UCoGe

Single-crystals of the new ferromagnetic superconductor UCoGe have been grown. The quality of as-grown samples can be significantly improved by a heat-treatment procedure, which increases the residual resistance ratio (RRR) from ∼5 to ∼30. Magnetization M(T) and resistivity ρ(T) measurements show the annealed samples have a sharp ferromagnetic transition with a Curie temperature T_C is 2.8 K. The ordered moment of 0.06 μ_B is directed along the orthorhombic c-axis. Superconductivity is found below a resistive transition temperature T_s=0.65 K.     

Modeling of the out-of-plane resistivity of cuprate superconductors

The out-of-plane (c-axis) resistivity, ρ_c(T), of high-T_c cuprates have been modeled in this study. The non-Fermi liquid like temperature dependence of ρ_c(T) has been described by considering (i) the full impact of the pseudogap (PG) in the electronic density of states (EDOS) and (ii) the presence of a quantum critical point (QCP) beneath the superconducting dome at slightly overdoped region. This simple phenomenological model describes the experimental ρ_c(T) data over a wide range of hole content (from the underdoped to slightly overdoped regions) remarkably well. The PG energy scale, ε_g (dominated by the anti-nodal parts of the Brillouin zone) extracted from the analysis of ρ_c(T) data was found to decrease almost linearly with increasing hole concentration, p, in the CuO₂ planes. We have also discussed about the possible origin of more conventional behavior of ρ_c(T) observed in the deeply overdoped side of the T–p phase diagram in this paper.     

Scaling of the temperature-dependent resistivity in SrFe2−xNixAs2

We show that the zero-field normal-state resistivity of temperature-dependent resistivity ρ(T) of SrFe_2?xNi_xAs₂ can be reproduced by the expression ρ(T) = ρ₀ + c T exp(?2Δ/T). ρ(T) can be scaled using both this expression where the energy scale Δ, c and the residual resistivity ρ₀ are scaling parameters and a recently proposed model-independent scaling method (H.G. Luo, Y.H. Su, T. Xiang, Phys. Rev. B 77 (2008) 014529). The scaling parameters have been calculated and the compositional variation of 2Δ(x) has been determined. This dependence show almost a linear decreasing in the underdoped regime similar to that reported for cuprates. The existence of a universal metallic ρ(T) curve in a wide temperature range which, however, is restricted for the underdoped compounds to temperatures above a structural and anitiferromagnetic transition is interpreted as an indication of a single mechanism which dominates the scattering of the charge carriers in SrFe_2?xNi_xAs₂ (x = 0–0.3).     

Competition between structural and electronic factors in (Al/In) doped lanthanum manganites

X-ray structure parameters of La_0.7Ca_0.3Mn_0.96(In_xAl_(1−x))_0.04O₃ perovskite manganites determined from the Rietveld analysis of the orthorhombic unit cell, space group Pbnm, showed strong dependence on x. Resistivity (ρ) and ac magnetic susceptibility (χ) measurements showed decrease in the metallic-to-semiconductor transition temperature T_ρ and the ferromagnetic-to-paramagnetic Curie temperature T_C as x increases. The large drop in T_ρ and T_C for x=0.0 and 1.0 is ascribed to the difference between the electronic configuration (E-factor) and ionic radius (structure factor) of the dopants and the Mn³⁺ ions. Decrease in T_ρ and T_C for samples (0.2<x<0.8) is mainly due to the size mismatch between the A and B sites (structure factor).     

Influence of Ce doping on electrical and thermal properties of La0.7−xCexCa0.3MnO3 (0.0≤x≤0.7) manganites

The effect of Ce-doping on structural, magnetic, electrical and thermal transport properties in hole-doped manganites La_0.7−xCe_xCa_0.3MnO₃ (0.0≤x≤0.7) is investigated. The structure of the compounds was found to be crystallized into orthorhombically distorted perovskite structure. dc Susceptibility versus temperature curves reveal various magnetic transitions. For x≤0.3, ferromagnetic regions (FM) were identified and the magnetic transition temperature (T_C) was found to be decreasing systematically with increasing Ce concentration. The electrical resistivity ρ(T) separates the well-define metal-semiconducting transition (T_MS) for low Ce doping concentrations (0.0≤x≤0.3) consistent with magnetic transitions. For the samples with 0.4≤x≤0.7, ρ(T) curves display a semiconducting behavior in both the high temperature paramagnetic (PM) phase and low temperature FM or antiferromagnetic phase. The electron–phonon and electron–electron scattering processes govern the low temperature metallic behavior, whereas small polaron hopping model is found to be operative in PM phases for all samples. These results were broadly corroborated by thermal transport measurements for metallic samples (x≤0.3) in entire temperature range we investigated. The complicated temperature dependence of Seebeck coefficient (S) is an indication of electron–magnon scattering in the low temperature magnetically ordered regime. Specific heat measurements depict a broadened hump in the vicinity of T_C, indicating the existence of magnetic ordering and magnetic inhomogeneity in the samples. The observation of a significant difference between ρ(T) and S(T) activation energies and a positive slope in thermal conductivity κ(T) implying that the conduction of charge carriers were dominated by small polaron in PM state of these manganites.     

Spin-state transition, magnetic, electrical and thermal transport properties of the perovskite cobalt oxide Gd0.7Sr0.3CoO3

The magnetization, resistivity ρ, thermoelectric power (TEP) S, and thermal conductivity κ in perovskite cobalt oxide Gd_0.7Sr_0.3CoO₃ have been investigated systematically. Based on the temperature dependence of susceptibility χ_g(T) and Seebeck coefficient S(T), a combination of the intermediate-spin (IS) state for Co³⁺ and the low-spin (LS) state for Co⁴⁺ can be suggested. A metal-insulator transition (MIT) caused by the hopping of σ* electrons (localized or delocalized e_g electrons) from the IS Co³⁺ to the LS Co⁴⁺ is observed. Meanwhile, S(T) curve also displays an obvious phonon drag effect. In addition, based on the analysis of the temperature dependence of S(T) and ρ(T), the high-temperature small polaron conduction and the low-temperature variable-range-hopping conduction are suggested, respectively. As to thermal conduction κ(T), rather low κ values in the whole measured temperature range is attributed to unusually large local Jahn-Teller (JT) distortion of Co³⁺O₆ octahedra with IS state.     

New insights in the T dependence of the electrical resistivity in size-effect dominated pure metal foils from measurements on high-purity Au at low T

Analysis of Soffer's size-effect theory for electrical resistivity shows, for measurements in such a T range for which the temperature dependent portion of the resistivity, ρ_i, is always much smaller than the residual bulk resistivity ρ_∞(0) of the metal studied, that while size-effects leave the essential T dependence of ρ_i unchanged, it may increase its absolute value and the observed residual resistivity ρ(0), thus explaining recent results of Caplin et al. This also corrects the general conclusion arrived at by the latter authors, i.e. that the T dependence of ρ of a metal foil of given residual resistivity is the same as that of a bulk sample of the same residual resistivity provided that the latter is governed by impurity scattering, as being true for a narrow T range only, i.e. for which ρ_i(T) ? ρ_∞(0). However, for this T range a procedure is outlined which allows one to extract values of the surface specularity parameter p_S and also ρ_∞ of the metal foils studied.     

A theoretical and numerical consideration of the longitudinal and transverse relaxations in the rotating frame

We previously derived a simple equation for solving time-dependent Bloch equations by a matrix operation. The purpose of this study was to present a theoretical and numerical consideration of the longitudinal (R_1ρ = 1/T_1ρ) and transverse relaxation rates in the rotating frame (R_2ρ = 1/T_2ρ), based on this method. First, we derived an equation describing the time evolution of the magnetization vector (M(t)) by expanding the matrix exponential into the eigenvalues and the corresponding eigenvectors using diagonalization. Second, we obtained the longitudinal magnetization vector in the rotating frame (M_1ρ(t)) by taking the inner product of M(t) and the eigenvector with the smallest eigenvalue in modulus, and then we obtained the transverse magnetization vector in the rotating frame (M_2ρ(t)) by subtracting M_1ρ(t) from M(t). For comparison, we also computed the spin-locked magnetization vector. We derived the exact solutions for R_1ρ and R_2ρ from the eigenvalues, and compared them with those obtained numerically from M_1ρ(t) and M_2ρ(t), respectively. There was excellent agreement between them. From the exact solutions for R_1ρ and R_2ρ, R_2ρ was found to be given by R_2ρ = (2R₂ + R₁)/2 − R_1ρ/2, where R₁ and R₂ denote the conventional longitudinal and transverse relaxation rates, respectively. We also derived M_1ρ(t) and M_2ρ(t) for bulk water protons, in which the effect of chemical exchange was taken into account using a 2-pool chemical exchange model, and we compared the R_1ρ and R_2ρ values obtained from the eigenvalues and those obtained numerically from M_1ρ(t) and M_2ρ(t). There was also excellent agreement between them. In conclusion, this study will be useful for better understanding of the longitudinal and transverse relaxations in the rotating frame and for analyzing the contrast mechanisms in T_1ρ- and T_2ρ-weighted MRI.     

Study of some co-precipitated manganite perovskite samples-doped iron

Polycrystalline La_0.70Sr_0.30Mn_1−yFe_yO₃ (0.05?y?0.07) samples are prepared by the co-precipitation method and have been studied. The substitution of Mn³⁺ by Fe³⁺ reduces the number of available hopping sites for the Mn e_g(↑) electron and suppresses the double exchange (DE), resulting in the reduction of the metal–semiconductor transition temperature (T_P) and the flux density saturation (B_s). Low-temperature resistivity (ρ) data (below T_P) well fit with the relation ρ(T)=ρ₀+ρ₂T², indicating the importance of grain/domain boundary effects and electron–electron scattering processes in the conduction of these materials. On the other hand, at high temperature (T_P<T<θ_D/2) conductivity data satisfy the variable range hopping (VRH) model. For T>θ_D/2 the small polaron hopping model is more appropriate than the VRH model.     

Analysis of temperature-dependent electrical resistivity of ZnO nano-structures

The temperature–dependent electrical resistivity ρ(T) in metallic and semiconducting phase of ZnO nanostructures is theoretically analysed. ρ(T) shows semiconducting phase in low temperature regime (140 K<T<180 K), shows an absolute minimum near 180 K and increases linearly with T at high temperatures (200 K<T<300 K). The resistivity in metallic phase is estimated within the framework of electron–phonon and electron–electron scattering mechanism. The contributions to the resistivity by inherent acoustic phonons (ρ_ac) as well as high frequency optical phonons (ρ_op) were estimated using Bloch–Gruneisen (BG) model of resistivity. The electron–electron contributions ρ_e?e=BT² in addition with electron–phonon scattering is also estimated for complete understanding of resistivity in metallic phase. Estimated contribution to resistivity by considering both phonons, i.e., ω_ac and ω_op and the zero limited resistivity are added with electron–electron interaction ρ_e–e to obtain the total resistivity. Resistivity in Semiconducting phase is discussed with small polaron conduction (SPC) model. The SPC model consistently retraces the low temperature resistivity behaviour (140 K<T<180 K). Finally the theoretically calculated resistivity is compared with experimental data which appears favourable with the present analysis in wide temperature range.     

Giant magnetoresistance in the Ge-rich magnetocaloric compound,Gd5(Si0.1Ge0.9)4

We have measured the zero-field electrical resistivity in the temperature range 5–295 K and magnetoresistance in magnetic fields of up to 12 T of Gd₅(Si_0.1Ge_0.9)₄. The resistivity changes drastically at the magnetostructural first-order transition (T_C≅80 K on heating). This transition can be induced reversibly by the application of an external magnetic field above T_C, producing a concomitant giant magnetoresistance (GMR) effect, Δρ/ρ≅−50%. This study demonstrates that (in addition to giant magnetocaloric and magnetoelastic effects) GMR can be tuned between ∼20 and ∼290 K in Gd₅(Si_xGe_1−x)₄ with x⩽0.5 by simply adjusting the Si : Ge ratio.     

Effects of Cr doping in electron-doped manganites La0.9Te0.1MnO3

The effects of Cr doping on Mn sites in the electron-doped manganites La_0.9Te_0.1MnO₃ have been studied by preparing the series La_0.9Te_0.1Mn_1−xCr_xO₃ (0.05≤x≤0.20). Upon Cr doping, both the Curie temperature T_C and magnetization M are suppressed. The resistivity measurements indicate that there exists a weak metal-insulator (M-I) transition for the sample with x=0.05, with an increase in the doping level, the M-I transition disappears and the resistivity increases. Thermopower S(T) exhibits a maximum near T_C for all samples. By fitting the S(T) and ρ(T) curves, it is found that the temperature dependences of both S(T) and ρ(T) in the high temperature paramagnetic (PM) region follow the small polaron conduction (SPC) mechanism for all samples. The fitting parameters obtained imply changes of both the average-hopping distance of the polarons and the polaron concentration with Cr doping in our studied samples. In the case of the thermal conductivity κ(T), the variation of κ(T) is analyzed based on the combined effects due to the suppression of the local Mn³⁺O₆ Jahn-Teller (JT) lattice distortion because of the substitution of Cr³⁺ for Mn³⁺ ions, which results in the increase in κ, and the introduction of the disorder due to Cr-doping, which contributes to the decrease in κ.     

Study of temperature dependence of density, bulk modulus, shear modulus and thermal pressure for mantle minerals

The temperature dependence of different parameters i.e. density ρ(T), bulk modulus K_T(T), shear modulus G_T(T) and thermal pressure ΔP_th for mantle minerals i.e. X₂SiO₄ (X=Mg, Fe, Co, Mn) have been studied in high temperature range on the basis of semi-phenomenological isobaric equation of state. The calculated values of these parameters are showing good agreements with experimental value in case of each mantle minerals.     

Scaling of magnetoresistance of carbon nanomaterials in Mott-type hopping conductivity region

A method for analyzing data on Mott hopping conduction in a magnetic field, ρ ～ exp[(T ₀/T)^α], based on scaling relation ln[ρ(H)/ρ(0)] = (T ₀/T)^α F(H/T) for the spin-polarized contribution to the magnetore-sistance is proposed. This general approach is tested for a carbon nanomaterial synthesized from single-wall carbon nanotubes under high pressure (up to 7 GPa). The experiments confirmed the theoretical predictions over the temperature range 1.8–12.0 K in a magnetic field of up to 70 kOe and made it possible to correctly determine all parameters of the localized states involved in the model. The experimental data obtained for carbon nanomaterials synthesized from single-wall carbon nanotubes and a mixture of C_2N fullerenes indicate the possible renormalization of the magnetic moment of electrons involved in hopping transport.     

The effect of annealing process on the physical properties of La1−xNaxMnOy

The effect of Na doping and annealing time on the structure, electrical properties, magnetoresistance and thermopower properties has been investigated in perovskite La_1−xNa_xMnO_y (x=0.025, 0.075 and 0.1) systems. La_1−xNa_xMnO_y crystallizes in a single-phase rhombohedral structure. It is observed a simultaneous occurrence of the ferromagnetic to paramagnetic state and metallic to insulating state. In the meanwhile, a large negative magnetoresistance with low applied magnetic field is observed. In addition, ρ(T) curves for Na-doped samples exhibit another broad transition T_ms2 below T_ms. Such double peak behavior in the ρ(T) curve interpreted by the electronic inhomogeneity in the samples. The sign of S changes from positive to negative depending on composition. The values of Seebeck coefficient are small (in the microvolt range).     

La0.67Sr0.08Na0.25MnO3的奇特输运性质及CMR效应

用固相反应法制备了La_0.67Sr_0.08Na_0.25MnO₃样品.通过磁化强度-温度(M-T)曲线、电阻率-温度(ρ-T)曲线以及ρ-T拟合曲线研究了样品的输运性质及庞磁电阻(colossal magnetoresistance，CMR)效应.结果表明，ρ-T曲线和磁电阻-温度(MR-T)曲线均出现双峰现象；高温峰是伴随顺磁-铁磁(PM-FM)相变出现绝缘体-金属(I-M)相变，低温峰是颗粒界面效应；两个绝缘相输运机理不同：较低温度下(248K<T<274K)，ρ(T)符合极化子的可变程跃迁模型，而在更高温区(330K<T<374K)，ρ(T)符合极化子近邻跃迁模型；两个类金属相输运机理也不同：在低温区(67K<T<186K)，满足ρ-T^2.5关系，输运机理是自旋波散射和电-磁子散射作用，而在高温区(292K<T<304K)，满足ρ-T²关系，输运机理是单磁子散射作用. 关键词： 庞磁电阻 金属-绝缘体转变 晶界效应 输运行为