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1.
An HTSC powder sample with grain (particle) diameter of 20–50 μm placed in a dc magnetic field B 0 and cooled to a temperature below the superconducting transition temperature was exposed to the radiofrequency (rf) pulsed magnetic field B (B B 0) at a carrier frequency of 30.7 MHz. Stable echo signals were recorded which followed different rf-pulse trains. This phenomenon has the following mechanism. The rf magnetic field stimulates fluxoid oscillations on the HTSC grain surface, which are transformed into lattice oscillations through the pinning centers and induce a propagating sound wave. The second-order nonlinearity with respect to the gradient of the crystal lattice deviation from the equilibrium position taken into account in the sound wave equation yields the dependence of the crystal lattice natural frequency on the amplitude and length of the pulses which excite these oscillations. This dependence is responsible for the emergence of echo signals.  相似文献   

2.
The concentration dependences of the electronic properties (residual electrical resistivity, diffusion thermoelectric power, normal Hall effect, and low-temperature specific heat) and the magnetic characteristics (magnetization and paramagnetic susceptibility) of quasibinary (PdxPt1−x )3Fe, Pt3MnxFe1−x , (PdxAu1−x )3Fe, and ScxTi1−x Fe2 alloys are investigated. A relationship is established between the anomalous behavior of the kinetic properties and the variation of the local magnetic moments. The absence of corresponding anomalies in the concentration dependence of the specific heat indicates that the density of states at the Fermi level does not change significantly and, therefore, that the conventional Mott two-band model cannot be used to describe the anomalies in the properties of the alloys in question. A single interpretation of the sum-total of the experimental results is given on the basis of the theory of local fluctuations of the electron spin density in metal magnets. Fiz. Tverd. Tela (St. Petersburg) 39, 1257–1262 (July 1997)  相似文献   

3.
Misfit and thermoelastic stresses in HTSC layers 1-2-3 grown on various substrates are, analyzed with the use of ultrasonic measurements of Young's moduli inYBa 2 Cu 3 O 7−x . It is shown that the misfit stress gives the main contribution to the formation of the HTSC layer strain. Military Academy of Strategic Rocket Forces. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 87–90, April, 2000.  相似文献   

4.
Measurements of the heat capacity of the elpasolite Rb2KGaF6 and the solid solutions Rb2KGaxSc1−x F6 with a gallium content in the range x=0.6–0.95 are performed. The nature of the influence of the chemical composition of the compounds and the hydrostatic pressure on the temperature and entropy of the ferroelastic phase transitions is established. Fiz. Tverd. Tela (St. Petersburg) 39, 1844–1849 (October 1997)  相似文献   

5.
Ceramic samples of (1−x)SrTiO3-xSrMg1/3Nb2/3O3 and (1−x)SrTiO3-xSrSc1/2Ta1/2O3 were prepared, and their dielectric properties were studied at x=0.005–0.15 and 0.01–0.1, respectively, at frequencies 10 Hz–1 MHz and at temperatures 4.2–350 K. A giant dielectric relaxation was observed in the temperature range 150–300 K, and not so strong but well-developed relaxation was found in the temperature range 20–90 K. The activation energy U and the relaxation time τ0 were determined to be 0.21–0.3 eV and from 10−11 to 10−12 s for the high-temperature relaxation and 0.01–0.02 eV and 10−8–10−10 s for the low-temperature relaxation, respectively. The additional local charge compensation of the heterovalent impurities Mg2+ and Nb5+ (or Sc3+ and Ta5+) by free charge carriers or the host ion vacancies is suggested to be the underlying physical mechanism of the relaxation phenomena. On the basis of this mechanism, the Maxwell-Wagner model and the model of reorienting dipole centers Mg2+ (or Sc3+) associated with the oxygen vacancy are proposed to explain the high-temperature relaxation with some arguments in favor of the latter model. The polaron-like model with the Nb5+-Ti3+ center is suggested as the origin of the low-temperature relaxation. The reasons for the absence of ferroelectric phase transitions in the solid solutions under study are also discussed. From Fizika Tverdogo Tela, Vol. 44, No. 11, 2002, pp. 1948–1957. Original English Text Copyright ? 2002 by Lemanov, Sotnikov, Smirnova, Weihnacht. This article was submitted by the authors in English.  相似文献   

6.
7.
Measurements of the temperature dependence of the electrical resistance R(T) below the superconducting transition temperature have been performed at different values of the transport current in HTSC+CuO composites modeling a network of weak S-I-S Josephson junctions (S—superconductor, I—insulator). It has been shown experimentally that the temperature dependence R(T) at different values of the transport current is adequately described by means of the mechanism of thermally activated phase slippage developed by Ambegaokar and Halperin for tunnel structures. Within the framework of this model we have numerically calculated the temperature dependence of the critical current J c(T) as defined by various criteria. Qualitative agreement obtains between the measured and calculated temperature dependences J c(T). Fiz. Tverd. Tela (St. Petersburg) 41, 969–974 (June 1999)  相似文献   

8.
The concentration dependence of the entropy of doped Mott-Hubbard insulators has been considered within the t-J model. It has been shown that a change in the type and statistics of charge carriers as compared to the Fermi gas leads to a radical change in the entropy s, in particular, to the giant growth of the entropy upon doping. The quantity ∂s/∂xk B is approximately consistent with the experimental data for HTSC cuprates in the pseudogap phase.  相似文献   

9.
The thermal expansion of single crystals of the Bi2Sr2−x La x CuO6+δ high-temperature superconducting (HTSC) system in the insulating phase with compositions having no superconducting transition to a temperature of 1.8 K (x ≥ 0.8) is measured in an arbitrary direction in the (ab) plane in the temperature range of 7–50 K. Temperature regions of material compression upon heating are found. The study of anomalies in magnetic fields of 3 and 6 T, parallel and perpendicular to the c-axis revealed an anisotropic and nonmonotonic effect of the field on thermal expansion. Such anomalies for the n-type Nd2−x Ce x CuO4−δ HTSC sample also having no superconducting transition are detected for the first time. The results show that the anomaly nature is caused by anisotropic electronic ordering, probably, by the charge density wave in the CuO2 plane and superconductivity fluctuations in the insulating phase.  相似文献   

10.
Summary This paper deals with a comparison of chemical, physical and mechanical characterisation of YBCO samples obtained with Temporary-Liquid-Densification Melt Growth (TLDMG). Ba2YCu3O7-x +50% excess BaY2CuO5 pellets were prepared from different Ba-Y-Cu-O system phases, suitable to produce during the heat treatment temporary liquids at temperatures lower than 1000°C. A mechanical characterisation was performed in zero-field-cooling and field-cooling condition, showing hysteretic behaviour and creep of the levitation force. Measurements of magnetic hysteresis cycles in low fields and a.c. susceptibility were also performed. Some mechanical applications (high-speed electric motor and flywheel energy accumulator) were built and tested. The work now proceeds on two new industrial applications of melt-processed HTSC materials. Paper presented at the “VII Congresso SATT? Torino, 4–7 October 1994.  相似文献   

11.
The electrical properties of microcrystalline Sc3N@C80 fullerene with fcc structure are studied by measuring both d.c. conductivity temperature dependence and a.c. impedance. Below 450 K the Sc3N@C80 sample has an energy band gap of 1.71 eV, which does not depend on the strength of the applied electric field. But when the temperature is above 450 K, a phase transition which results in a small band gap of 1.22 eV occurs under electric field strengths larger than 1 kV/cm. We also found from Cole–Cole plots of a.c. impedance that the contact resistance at the Au/Sc3N@C80 interface is less than that at the Au/C60 interface.  相似文献   

12.
The temperature dependence of the electrical conductivity and current-voltage characteristics of γ-irradiated TlInSe2 single crystals with an electrical resistivity of ∼108 Ω cm have been investigated. It has been established that the anomalies of the conductivity observed in weak electric fields and at low dozes of irradiation are related to the decomposition of neutral complexes containing an interstitial cation atom. In strong electric fields, a thermal-field ionization of traps occurs. The main mechanism of radiation defect formation is the formation of complexes [V InIn i +], [V SeSe i ], and others with the structural defects characteristic of unirradiated crystals. The activation energy, trap concentrations, and the potential well shape near the traps have been determined.  相似文献   

13.
A study has been made of the glass-forming ability, structure, and superconducting properties of Bi2.2Sr1.8Ca1.05Cu2.15LixOy and Bi2.2Sr1.8Ca1.05Cu2.15−x LixOy (x=0;0.3;0.5;0.7). The compounds were melted by rf at T=1300–1500 °C. Rapid quenching produces glassy alloys whose glass-forming ability is the highest when lithium is substituted for copper. Glass annealing at 700–800 °C results in the formation of the HTSC phase 2212 with a critical temperature of up to 91 K. In lithium-doped samples the HTSC phase forms at lower temperatures and shorter anneals and it depends on the cooling rate following the anneal. The composition and properties of the 2212 phase depend nonmonotonically on the anneal time. The lattice parameter C of the 2212 phase increases with increasing lithium content. Fiz. Tverd. Tela (St. Petersburg) 41, 18–21 (January 1999)  相似文献   

14.
The electrical properties of (Co45Fe45Zr10)x(Al2O3)1−x granular nanocomposites have been studied. The concentration dependences of electrical resistivity are S-shaped (in accordance with the percolation theory of conduction) with a threshold at a metallic component concentration of ∼41 at. %. An analysis of the temperature behavior carried out in the range 300–973 K revealed that structural relaxation and crystallization of the amorphous phase are accompanied by a decrease in the electrical resistivity of the composites above the percolation threshold and by its increase below the percolation threshold. For metallic phase concentrations x<41 at. %, variable range hopping conduction over localized states near the Fermi level was found to be dominant at low temperatures (77–180 K). A further increase in temperature brings about a crossover of the conduction mechanism from Mott’s law ln(σ) ∝ (1/T)1/4 to ln(σ) ∝ (1/T)1/2. A model of inelastic resonance tunneling over a chain of localized states of the dielectric matrix was used to find the average number of localized states involved in the charge transport between metallic grains. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 11, 2004, pp. 2076–2082. Original Russian Text Copyright ? 2004 by Kalinin, Remizov, Sitnikov.  相似文献   

15.
Magnetic flux trapping (MFT) in granular YBa2Cu3O7 − δ high-temperature superconductors (HTSCs) is studied. At T = 77.36 K, the dependence of the hysteresis of the transverse magnetoresistance on transport current I and the maximum value of external magnetic field H ext is found in the measurement cycle 0 → H extmax → 0. The dependences of the parameters characterizing MFT, namely, residual magnetoresistance, field H min at which the magnetoresistance is minimal, and the magnetoresistance at H ext = H min, on I and H extmaxare determined. MFT is found to occur in HTSC granules under the action of an external magnetic field exceeding the lower critical field of superconducting granules H c1A, and the transport current only weakly affects the magnitude of MFT.  相似文献   

16.
Summary YBCO step-edge junction d.c. SQUIDs have been realized by using the Inverted Cylindrical Magnetron Sputtering (ICMS) technique. This last represents a novel technology for high-T c Josephson junctions (HTSC). Steps are obtained by standard ion milling procedure on LaAlO3 (100) substrates using Nb-masks patterned by reactive ion etching. Measurements of currentvs. voltage, maximum d.c. Josephson currentvs. magnetic field and SQUID voltage response measurements have been performed, also as a function of the temperature. Operating temperature as high as 77K has been achieved. At 4.2K the SQUIDs show a maximum voltage of flux transfer function (∂V/∂ϕ)max=870 μV/Ф0 and a good periodicity of theV-ϕ modulation up to 20Ф0 without any sign of hysteresis. The ratio between the step height (h) and the film thickness (d) seems to play a fundamental role in determining Josephson properties of the bridges, these conditions being more severe with respect to most of the data available in literature. Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.  相似文献   

17.
For the study of the nature of binding in the Sc2 dimer, the ground state, X5Σ u , was calculated by the valence multireference configuration interaction method with single and double excitations plus Davidson correction, MRCISD (+Q), at the complete basis set (CBS) limit. The employment of the C2v symmetry group, allowed us to obtain the Sc atoms in different states at the dissociation limit. From the Mulliken population analysis and comparison with atomic energies follows that in the ground state Sc2 dissociates on one Sc in the ground state and the other in the second excited quartet state, 4F u . The spectroscopic parameters of the ground potential curve, obtained at the valence MRCISD (+Q)/CBS level, are: R e  = 5.20 bohr, D e  = 50.37 kcal/mol, and ω e  = 234.5 cm-1. The obtained value for the harmonic frequency agrees very well with the experimental one, ω e  = 239.9 cm-1. The dissociation energy with reference to the dissociation on two Sc in the ground states was estimated as D e  = 9.98 kcal/mol. In contrast with many other studied transition-metal dimers, which are attributed to the van der Waals bonded molecules, the Sc2 dimer is stabilized by the covalent bonding on the hybrid atomic orbitals.  相似文献   

18.
The role of anisotropy of the coupling constant in the influence of nonmagnetic impurities on the behavior of the superconducting transition temperature T c is investigated in the high-temperature superconductor (HTSC) model, where high values of T c result from an increase in the density of states near the Fermi surface. It is shown that this model is more sensitive to impurities than the BCS model; Anderson compensation does not occur in the HTSC model, even for identical distributions of the densities of states in the superconducting and impurity channels, and the impurity contributions are no longer linear with respect to the impurity concentration in the vicinity of T c. Anisotropy of the superconducting gap Δ and the possibility of its disappearance at certain points on the Fermi surface due to various types of pairing are manifested in the stability of the superconducting phase against the influence of impurities. Fiz. Tverd. Tela (St. Petersburg) 39, 1940–1942 (November 1997)  相似文献   

19.
The interaction of a Gulyaev-Bluestain surface wave with a granular high-temperature superconducting (HTSC) medium has been investigated. For piezoelectrics of symmetry 4mm and 6mm, dispersion equations have been derived that describe the characteristics of surface acoustic waves (SAWs). The temperature dependences of the SAW attenuation and phase have been calculated forZnO andBa 2Si2TiO3 crystals. It is shown that at temperatures higher than the critical temperature an attenuation jump and a phase shift are observed. The effect intensifies with increase in the electromechanical coupling coefficient and with decrease in the thickness of the HTSC film. For theBa 2Si2TiO3 crystal the attenuation jump and phase shift are11 dB/cm and38 deg/cm, respectively, at a frequency of820 MHz. The results obtained can also be generalized for periodic HTSC structures and can be used to design frequency-selective devices and fast-response bolometric photodetectors. Tomsk State University of Control Systems and Radioelectronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 49–52, April, 1999.  相似文献   

20.
The Tl2S compound was prepared in a single crystal form using a special local technique, and the obtained crystals were analysed by X-ray diffraction. For the resultant crystals, the electrical properties (electrical conductivity and Hall effect) and steady-state photoconductivity were elucidated in this work. The electrical measurements extend from 170 to 430 K, where it was found that σ = 8.82 × 10−5 Sm−1 when current flow direction makes right angle to the cleavage plane of the crystals. In the same range of temperatures, it was found that σ = 4.73 × 10−5 Sm−1 when the current flow is parallel to the cleavage plane. In line with the investigated range of temperatures, the widths of the band gaps were calculated and discussed as also the results of the electrical conductivity and Hall effect measurements. In addition, the anisotropy of the electrical conductivity (σ /σ ) for the obtained crystals was also studied in this work. Finally the photosensitivity was calculated for different levels of illumination as a result of the photoconductivity measurements, which showed that the recombination process in Tl2S single crystals is a monomolecular process.   相似文献   

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