还原石墨/氧化锌复合薄膜的制备及其光电转换性能

本工作研究不同过程还原的氧化石墨rGO/ZnO(reduced graphite oxide/ZnO)复合膜的可见光激发光电转换性能。氧化石墨(GO)经KOH还原处理或NaBH₄还原处理后, 和氧化锌溶胶混合, 通过旋涂法和热处理在F掺杂SnO₂薄膜导电玻璃(FTO)衬底上形成复合薄膜。采用XRD、FTIR、FE-SEM、XPS、UV-Vis等方法对复合薄膜的晶相结构、微观形貌等进行表征, 并测试了复合薄膜在可见光照射下的光电转换性能。GO的预处理过程对复合薄膜的结构影响显著, 采用NaBH₄对GO处理更有利于形成均匀薄膜。光电流测试结果表明不同复合薄膜均能实现可见光照射下产生光电流, 其原理为rGO的光激发电子跃迁到ZnO, 而空穴在rGO中迁移, 在rGO与ZnO界面实现光生载流子分离。其中NaBH₄处理后的rGO/ZnO复合薄膜光电流密度最大, 达6×10^-7 A·cm^-2。     

溶胶-凝胶法制备掺杂二氧化钛薄膜及其光电性能研究

运用溶胶-凝胶法制备玻璃、陶瓷材料,具有低温、均匀、高纯、溶液铸塑等独特的优点,已引起科研人员的极大兴趣^[1]。二氧化钛是一种具有良好的光学性能的半导体材料,并已被广泛地研究。     

Au/ZnO/TiO_2复合薄膜的制备及光电转换性质

以含有Au和ZnO纳米颗粒的氢氧化钛溶胶作为成膜液,通过浸渍-提拉及灼烧处理在导电玻璃表面制备Au/ZnO/TiO2复合薄膜.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)等方法对所得产物进行表征.结果表明,Au和ZnO纳米颗粒均匀地分布在多孔TiO2薄膜上,通过TiO2、ZnO和Au三组分的协同效应促进了光吸收和电荷分离,使Au/ZnO/TiO2复合薄膜具有较好的光电转换性质,可用作太阳能电池材料.     

Zr0.5Ti0.5O2纳米薄膜的光电性能

采用溶胶-凝胶法制备了Zr0.5Ti0.5O2固溶体薄膜,通过X-射线衍射分析（XRD）、扫描电镜分析（SEM）、紫外吸收光谱(UV-Vis)和X射线光电子能谱（XPS）等方式对材料进行了表征。结果表明实验制得的材料Zr：Ti=1:1,薄膜表面平整、致密、光滑,皲裂情况较单纯的TiO2和ZrO2薄膜有明显改进;另外由于Zr的掺入,薄膜在紫外光波段有良好的吸收,吸收边较TiO2薄膜有明显的蓝移。通过标准的光刻剥离技术和磁控溅射技术在Zr0.5Ti0.5O2纳米薄膜上制作了叉指型的金属电极。在5V偏压下,样品对可见光不吸收,对260 nm的紫外光有明显的光电响应,光电流与暗电流之比近3个数量级。     

硫化镉纳米薄膜的制备及其光电性能

CdCl2·2H2O与S在N,N-二甲基甲酰胺中制备纳米CdS薄膜,其结构经UV-Vis,FL,XRD,SEM,Ⅳ表征.n(CdCl2)∶n(S) =0.065∶0.01,反应电压5V,于80℃(水浴温度)反应5 min制得CdS薄膜的光电性能、稳定性及薄膜结构均较好.     

硒/氧化石墨烯/二氧化钛复合薄膜的制备及光电转换性质

将氧化石墨烯(GO)掺入钛酸溶胶中,以导电玻璃(ITO)为基底,经浸渍-涂覆-煅烧得到GO/TiO2复合薄膜;采用电沉积技术在GO/TiO2薄膜表面沉积Se纳米微粒,得到Se/GO/TiO2复合薄膜;利用扫描电子显微镜和X射线衍射仪分析了复合薄膜的形貌和晶体结构,采用紫外可见光谱仪测定了其光谱学性质,利用光电转换实验测定了其光电转换性质.结果表明,所制备的Se/GO/TiO2复合薄膜各组分分布均匀,具有锐钛矿相结构的TiO2颗粒粒径为20nm,与TiO2结合的GO具有分散片层结构,薄膜中的Se颗粒粒径为60～80nm.与此同时,在Se和GO的共同作用下,Se/GO/TiO2复合薄膜对可见光有很好的光电转换效应.     

溶胶-凝胶法制备Tb-PDA/PVA薄膜及其荧光性能

采用溶胶-凝胶法制备了铽(Ⅲ)-吡啶-2,6-二羧酸/聚乙烯醇(Tb-PDA/PVA)发光薄膜,其结构经IR,差热分析,原子力显微镜及荧光光谱表征.分析结果表明:薄膜表面平整,PVA中的纳米Tb-PDA(平均粒径为90 nm)分散均匀,在270 ℃以下具有良好的热稳定性.在紫外光照射下,薄膜发出较强的绿色荧光,最大发射峰位于544 nm,归属于Tb3+的5D4→7F5跃迁.     

氧化石墨烯在氧化锌衬底上的电化学还原及其光电性能

采用阳极电泳法,在氧化锌(ZnO)衬底上沉积氧化石墨烯(GO)以形成GO-ZnO双层复合膜;采用阴极恒电位法,对复合膜上的GO进行还原。对不同还原时间的GO,通过X射线光电子能谱(XPS),傅里叶变换红外(FTIR)光谱,场发射扫描电子显微镜(FESEM)等手段对其结构变化进行表征,采用紫外-可见(UV-Vis)分光光度法和电化学测试手段对其能级演变进行考察,并对两者的对应关系进行了讨论。研究发现,当GO膜达到最大还原态后,随还原时间增加还会出现进一步的结构转变,并最终碎裂生成边缘羧基增多的小尺寸GO。GO能隙均减小至可见光范围,其能级位置及半导体极性也产生了不同的改变。由对复合膜的光电化学测试可见,除1800 s GO能级不再与ZnO匹配外,60 s到600 s GO-ZnO复合膜均可作为阳极光电极进行太阳光电转换。对光电性能差异的讨论则可得,GO膜碎裂造成叠层形貌向无序形貌的转变有利于光电转换性能的提升。     

SnS薄膜的两步法制备及其光电性能研究

用两步法制备了SnS薄膜,首先在玻璃衬底上用磁控溅射法沉积一层Sn薄膜,然后在220℃下加热炉中硫化60 min.对该薄膜进行结构、表面形貌和光电性能分析,结果表明:制备的SnS薄膜为p型导电,有明显的(040)方向择优取向;薄膜表面致密,S和Sn原子非常接近化学计量比;薄膜呈现高于5×10⁴ cm^-1的吸收系数和持续光电导效应,其直接带隙约为1.23 eV,适合作为太阳能电池的吸收层材料和用于制作光敏器件.     

纳米ZnO薄膜的制备及其可见光催化降解甲基橙

采用溶胶-凝胶方法制备ZnO透明溶胶, 在铝箔上涂膜后经500 ℃处理制得具有可见光响应的纳米ZnO薄膜光催化剂. 以甲基橙模拟有机污染物, 在可见光下研究了薄膜的降解性能, 结果表明, 用一片有效面积为200 cm2的ZnO/Al薄膜作为催化剂, 甲基橙的降解率达到96.3％, 比ZnO负载在玻璃上制得的ZnO/glass薄膜催化剂活性高得多. 采用扫描电镜与原子力显微镜对ZnO/Al薄膜制备条件进行了表征, 结果发现多孔ZnO/Al薄膜比致密ZnO/Al薄膜具有更高的活性, 实验制备的具有高活性的ZnO/Al薄膜颗粒平均直径为52.2 nm. 采用本方法制备的ZnO/Al薄膜是一种具有应用前景的, 能在可见光下降解有机物的有效光催化剂.     

ZnO/RGO复合材料的结构及其光催化性能研究

本实验以ZnSO₄和氧化石墨(Graphite Oxide,GO)原料,在低温环境下(60 ℃)制备了层状ZnO/RGO(ZnO/Reduced Graphite Oxide)复合材料。通过对ZnO/RGO复合材料进行XRD、FTIR、XPS和FE-SEM等测试,表征了产物的晶相结构、界面状况及微观形貌特征。氧化石墨在与ZnO的复合反应过程中其活性基团消失或减弱,氧化石墨自身被还原为一种类石墨物质(Reduced GO,RGO);GO的预处理过程对产物的形貌有较大影响,采用稀碱溶液对石墨的剥离处理有利于产物的层状结构形成。本文还以甲基橙为目标降解物,考察了不同条件下所得催化剂的紫外光催化性能。研究表明,ZnO/RGO纳米复合材料大大提高了ZnO紫外光催化活性。光致发光谱(PL)显示,ZnO/RGO复合材料的荧光发射峰强度比纯ZnO有较大降低,说明ZnO的光激发电子在氧化石墨的还原产物RGO和ZnO纳米颗粒之间存在界面电子转移效应,因而抑制了ZnO中光生电子-空穴对的复合,从而提高了ZnO的光催化性能。     

氧化石墨的制备及其有机化处理

Graphite oxide(GO) was successfully prepared by using expandable graphite， which is a new starting material instead of the normally adopted natural graphite. XRD and XPS data indicated that， in the same reaction condition due to the application of expandable graphite， the extent of oxidation for the product， GO， was considerably en-hanced and the period required for oxidation was greatly shortened. In addition， the prepared GO was modified by surfactant， that is the new sample， S-GO， was obtained. As a consequence the extended interlayer space has proved itself to be successfully intercalated by the surfactant.     

Preparation and Characterization of Molybdenum Oxide Thin Films by Sol-Gel Process

This paper presents a new sol-gel process to prepare molybdenum oxide thin films. A molybdenum acetylacetonate sol was prepared by employing the system CH₃COCH₂COCH₃/MoO₃/C₆H₅CH₃/HOCH₂CH₂OCH₃. A molybdenum acetylacetonate gel was prepared by addition of aqueous NH₃. Thermal gravimetry (TG) and differential thermal analyses (DTA) of the gel suggested that crystallization of MoO₃ occurs in a 140 K temperature range around 508°C. MoO₃ films were prepared on fused silica, Si (111) and Al₂O₃ (012) substrates by annealing spin coating films of the sol in oxygen environment at 508°C. X-ray diffraction (XRD) showed that all films crystallize in -MoO₃ structure, and crystallites on fused silica substrate are arbitrarily oriented while those on Si (111) and Al₂O₃(012) substrates oriented in the (010) direction. SEM investigations showed that MoO₃ grains of all films are randomly distributed, with a longitudinal dimension of about 1–5 m and the film thickness is about 1 m.     

Functionalization of Reduced Graphite Oxide Sheets with a Zwitterionic Surfactant

Films of a few layers in thickness of reduced graphite oxide (RGO) sheets functionalized by the zwitterionic surfactant N‐dodecyl‐N,N‐dimethyl‐3‐ammonio‐1‐propanesulfonate (DDPS) are obtained by using the Langmuir–Blodgett method. The quality of the RGO sheets is checked by analyzing the degrees of reduction and defect repair by means of X‐ray photoelectron spectroscopy, atomic force microscopy (AFM), field‐emission scanning electron microscopy (SEM), micro‐Raman spectroscopy, and electrical conductivity measurements. A modified Hummers method is used to obtain highly oxidized graphite oxide (GO) together with a centrifugation‐based method to improve the quality of GO. The GO samples are reduced by hydrazine or vitamin C. Functionalization of RGO with the zwitterionic surfactant improves the degrees of reduction and defect repair of the two reducing agents and significantly increases the electrical conductivity of paperlike films compared with those prepared from unfunctionalized RGO.     

氧化铑电致变色薄膜的制备、结构及性能

采用溶胶_凝胶方法在ITO导电基底上制备氧化铑电致变色薄膜 .当在碱性溶液中对薄膜分别施加阴极和阳极电位时 ,薄膜即呈现由亮黄到深绿的可逆变化 .采用原位XRD、TG_DTA、IR、XPS等方法对薄膜的结晶态、热处理过程以及膜的化学组成进行分析 .应用交流阻抗法计算了薄膜变色过程的扩散系数 ,结果表明该膜基本可以用于变色器件     

ZnO/TiO2复合涂层电极的制备及其光电性能

以氧化铟锡导电玻璃为基材,采用电泳沉积法制备负载型ZnO/TiO2复合涂层,经450℃后续烧结处理后,采用XRD、SEM、EDX和UV-Vis DRS对ZnO/TiO2复合涂层进行表征;在pH=7.00的磷酸盐缓冲溶液中,分别测试ZnO/TiO2复合涂层电极在紫外灯和100 W白炽灯辐照下的电化学阻抗谱、Tafel极化曲线和循环伏安等电化学性质。结果表明:ZnO以200~300 nm晶粒分散于复合涂层中,质量百分比为0.74%;ZnO/TiO2复合涂层在可见光区有一定的吸收;在可见光辐照下ZnO/TiO2复合涂层电极具有较好的光电活性,并对水的分解具有较强的光电催化活性。     

Electrical Properties of Transparent Doped Oxide Films

In the present study n-type and p-type transparent conductive TiO₂ films were prepared by using sol-gel method. The n-type TiO₂ films were obtained by using Ti(OC₃H ₇ ⁱ )₄ solutions co-doped with Ru and Ta. The films were uniform and transparent in all the conditions, and their crystalline phases were anatase when HCl or HNO₃ was used as a catalyst. The resistivity decreased with increasing Ta content and increased with increasing Ru content. Most of the films showed resistivity minima at a heat-treatment temperature of 700°C. The lowest resistivity of 10¹ 10² cm was attained. The p-type TiO₂ films were obtained by using Ti(OC₃H ₇ ⁱ )₄ solutions co-doped with Co and Nb (Sb). The films were also uniform and transparent when AcAc was used, while samples heat-treated at 800°C became opaque when HCl was added. Rutile single phase appeared when the films were heat-treated at 700°C. Logarithmic resistivity of films co-doped with Co and Nb was directly proportional to the reciprocal absolute temperature. On the other hand, the slopes for films co-doped with Co and Sb were different below and above 200°–220°C. The activation energy at the low-temperature region is as low as 0.17 eV, and the resistivity at room temperature is 10⁴ 10⁵ cm.     

卟啉自组装超薄膜的制备及其在光电转换方面的研究*

卟啉及其衍生物的π电子共轭平面结构,使其具有独特的光电性能和良好的热稳定性,在仿生、催化、医学及材料科学等领域得到了广泛的应用。随着自组装技术的不断发展,其在制备功能化超薄膜方面表现出显著的优越性。本文重点介绍了卟啉及其衍生物自组装超薄膜的制备方法,并总结了近年来卟啉自组装膜在光电转换方面的研究进展。     

纤维素/全硫化弹性纳米粒子复合膜的制备与性能

利用碱脲溶剂低温溶解纤维素,在该体系中掺杂一定比例的全硫化羧基丁苯弹性纳米粒子,制备了纤维素/全硫化弹性纳米粒子复合膜.通过透射电镜、扫描电镜、WAXD、固体核磁共振、热分析和力学性能测试等对该复合膜的结构和性能进行了表征.结果表明,全硫化羧基丁苯弹性纳米粒子(CSB ENP)均匀的分散在具有微纳孔洞结构的纤维素基体中.CSB ENP的引入对纤维素再生过程中的结晶性影响不大.纤维素/全硫化弹性纳米粒子复合膜具有良好的透光性,并且热稳定性也有所提高.加入少量的CSB ENP可以增韧纤维素膜,且能保持良好的力学性能.当CSB ENP的含量为5 wt%时复合膜的断裂拉伸强度和断裂伸长率同时得到了提高.