Very strong interlayer exchange coupling in epitaxial Fe/Fe1−xSix/Fe trilayers (x=0.4–1.0)

Fe/Fe_1−xSi_x/Fe (x=0.4–1.0) wedge-type epitaxial trilayers with improved homogeneity are grown by co-evaporation from two electron-beam sources. The coupling strengths of the bilinear (J₁) and biquadratic (J₂) coupling terms are derived from Brillouin light scattering (BLS) spectra and longitudinal MOKE hysteresis loops. The total coupling strength J=J₁+J₂ increases dramatically with increasing x and reaches values in excess of 6 mJ/m².     

Energy band gaps for the GaxIn1−xAsyP1−y alloys lattice matched to different substrates

A pseudopotential formalism within the virtual crystal approximation in which the effects of composition disorder are involved is applied to the Ga_xIn_1−xAs_yP_1−y quaternary alloys in conditions of lattice matching to GaAs, InP and ZnSe substrates so as to predict their energy band gaps. Very good agreement is obtained between the calculated values and the available experimental data for the alloy lattice matched to InP and GaAs. The alloy is found to be a direct-gap semiconductor for all y compositions whatever the lattice matching to the substrates of interest. The (Γ→Γ) band-gap ranges and the ionicity character are found to depend considerably on the particular lattice-matched substrates suggesting therefore that, for an appropriate choice of y and the substrate, Ga_xIn_1−xAs_yP_1−y could provide more diverse opportunities to obtain desired band gaps, which opens up the possibility of discovering new electronic devices with special features and properties.     

Effect of cobalt substitution on cationic distribution in LiNi1 − y CoyO2 electrode materials

A crystal chemistry study of LiNi_{1 − y}Co_yO₂ phases, used as positive electrode in lithium batteries, is presented. These materials crystallize in the rhombohedral system (space group: R m) with a layered structure. Rietveld profile refinement of the X-ray data shows that for low substitution amounts ( ≤ 0.20) extra-nickel ions are always present leading to the Li_{1 − z}Ni_{1 + z − t}CotO₂ (t = y(1 + z)) formula (z * > 0), while for y ≥ 0.30, a pure 2D structure is obtained (z = 0). The stabilization of the 2D character of the structure by cobalt substitution in lithium nickelate leads to the improvement of the electrochemical properties.     

Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

Scattering-controlled recombination of Δ2-light-hole indirect excitons and apparently enhanced quantum confined Stark effect in tensilely strained Si1−yCy/Si (0 0 1) quantum wells

Anomalies are found in the near-band-edge luminescence properties of Δ₂-light-hole indirect excitons in Si_1−yC_y-based tensilely strained quantum wells (QWs). The experimental spectra exhibit a clear signature of phonon-assisted transitions on the lower energy side of the “no-phonon” transition, which indicates the relevance of “virtual” indirect valleys and in-plane k-dispersion, as opposed to the theoretical prediction that the zone-centered Δ₂ valleys take over the conduction band edge. Intervalley scattering between [0 0 1]-Δ₂ valleys and in-plane Δ₄ valleys is suggested as the underlying mechanism. On the other hand, the experimental evidence was found for “apparently enhanced” quantum-confined Stark red shifts for Si_1−yC_y-based QWs. However, quantitative estimates are in conflict with the experimental results and predict a blue shift due to exciton weakening which masks the Stark effect as in the case of Δ₄-heavy hole excitons in Si_1−xGe_x-based QWs.     

Carrier hopping in InAs/AlyGa1−yAs quantum dot heterostructures: effects on optical and laser properties

The optical properties of InAs/Al_yGa_1−yAs self-assembled quantum dots are studied as a function of temperature from 10 K to room temperature. The temperature dependence of carrier hopping between dots is discussed in terms of the depth of the dot confinement potential and the dispersion in dot size and composition. We show that carrier hopping between dots influences both the electrical and optical properties of laser devices having dots as active medium.     

Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1−xAs/GaAs heterojunction

In this work, we have looked for the correlation between the observed decay of reflection high-energy electron diffraction intensity oscillation and the critical layer thickness in the case of strained In_xGa_1−xAs/GaAs heterojunctions. The value of deading time constant of oscillation depends on the mismatch and on growth parameters, too. The decay of oscillation was described by two deading time constants which are responsible for the influences of the parameters mentioned above. The critical layer thickness was valued from the deading time constant responsible for the influence of mismatch only. The critical layer thickness determined this way shows good agreement with the theoretical model.     

Optical, X-ray absorption and photoelectron spectroscopy investigation of the Co site configuration in Zn1−xCoxO films prepared by pulsed laser deposition

In this paper, we investigate the Co site configuration in Zn_1−xCo_xO thin films by means of different spectroscopic techniques. Thin films were prepared by pulsed laser deposition with Co proportion from 1% to 30%. The Co 2p doublet observed in the X-ray photoelectron spectra exhibits the spin–orbit splitting and shake-up satellites typical of Co⁺² ionization states. X-ray absorption spectra at the Co K-edge, taken in fluorescence mode, unambiguously show that Co atoms are in tetrahedral configuration substituting for Zn over the whole composition range. Optical absorption spectra provide further evidence of the tetrahedral coordination of Co cations, both through the internal transitions in the Co 3d shell and through the shift to higher energies of the band-to-band absorption edge with the increase of the Co proportion.     

Effect of Co doping on the magnetic properties of La0.85Ag0.15(Mn1−yCoy)O3

The mixed valent manganites (La_0.85Ag_0.15)MnO₃ with perovskite structure has been prepared by doping up to 50% of Co at the Mn site. Paramagnetic (PM) to ferromagnetic (FM) transitions have been observed in all the prepared materials. However, the long-range magnetic ordering observed in (La_0.85Ag_0.15)MnO₃ is systemically reduced to cluster glass-type (short-range) of FM ordering due to the introduction of Co. The FM transition temperature was found to decrease with increase in Co doping up to 20% and for further increase in Co doping, the T_c was found to increase. They are explained on the basis of competition between FM double exchange interactions in Mn–O–Mn and Co–O–Co networks. In addition to PM–FM transition, evidences of FM to antiferromagnetic (AFM), and AFM to reentrant spin-glass transitions have been observed. The shift in spin-glass freezing temperature, T_f has been observed from the frequency variation of ac susceptibility measurements. The observed magnetic transitions are explained on the basis of magnetic interactions in different Mn–O–Mn, Mn–O–Co and Co–O–Co networks and such transitions are also observed from the measurement of third harmonic susceptibility. Metal–insulator transition and colossal magneto-resistivity have been observed up to 10% of Co doping.     

Influence of the doping level on the charge distribution among the inequivalent CuO2 layers in Tl2Ba2Ca2Cu3O10−δ : a NMR study

and NMR measurements in the normal and superconducting states of Tl₂Ba₂Ca₂Cu₃O_10−δ with different δ are reported. In the overdoped Tl2223 sample with T_c=117 K (T_c^opt=123 K) and δ₁<δ^opt different temperature dependencies of the Knight shift are revealed for inequivalent CuO₂ layers. For the inner CuO₂ layer with the square oxygen coordination of Cu the decrease of with temperature is more gradual. In going towards the underdoped Tl2223 with T_c=104 K and δ₂>δ^opt the changes of with temperature are found to be the same for both types of copper layers. The quadrupole coupling constants for copper and oxygen from different CuO₂ layers were obtained. From the variations with doping of the valence contribution to the electric field gradient at copper sites, we estimate both the hole numbers at Cu and oxygen sites and the real concentration of mobile hole carriers n_h in each of inequivalent CuO₂ layers. In the overdoped Tl2223 sample the charge density in the inner layer differs from the one in the outer plane (with five-fold oxygen coordination for Cu). Our results show that the inhomogeneity of the charge distribution disappears in the underdoped regime. The results are compared with calculations of the charge distribution among the CuO₂ planes in multilayered cuprates reported by Haines and Tallon [E.M. Haines, J.L. Tallon, Phys. Rev. B 45 (1992) 3127].