Influence of In-N Clusters on Band Gap Energy of Dilute Nitride In_xGa_(1-x)N_yAs_(1-y)

The In-N clusters form in the dilute nitride InxGa1-xNy As1-yalloys after annealing.It is found that the formation of the In-N clusters not only raises the N levels lying above the conduction band minimum(CBM)of In GaA s,but also raises the N levels below the CBM of In GaA s,leading to the variation of the impurity-host interaction.The blueshift of the band gap energy is relative to the variation of the impurity-host interaction.In order to describe the blueshift of the band gap energy due to the formation of the In-N clusters,a model is developed.It is found that the model can describe the blueshift of the band gap energy well.In addition,it is found the blueshift of the band gap energy due to the atom interdiffusion at the interface can be larger than that due to the formation of the In-N clusters.     

Thin layers of grey arsenic: A molecular orbital study

A thin layer of grey arsenic has been manufactured by molecular beam epitaxy and its He(I) photoelectron spectrum has been recorded. The quasi-relativistic CNDO/1 method has been used to investigate the band structure of {As}₁₁₄ and {As}₂₂₈ clusters: the DOS profiles and their projections are under question. These data were correlated with the periodic crystal orbitals of the EHT quality. The first excitation energy serves as a better estimate of the energy gap between the filled valence band and the empty conduction band.     

Exciton dispersion and electronic excitations in hcp 4He

We present first measurements of the dispersion of excitons in solid helium, taken on a single hcp 4He crystal along the c axis. In agreement with studies on helium clusters, the major energy-loss peak can be interpreted as an intermediate molecular-type exciton, as we do not observe Wannier-like excitations. The measurements are in the (0 0 2) periodic zone, with the exciton energy dispersing along the c axis with a minimum at the gamma point. A calculated conduction band minimum at 31.0 eV above the valence band at gamma is supported by our data at energies above the exciton energy, leading to an exciton binding energy of 8.4 eV.     

碘化铯晶体中电子型色心的电子结构研究

运用以密度泛函理论为基础的相对论性离散变分方法(DV-Xα)模拟计算了完整的和含有F心、F+心以及F2心的碘化铯(CsI)晶体的电子结构,得到了含F心和F+心以及F2心的CsI晶体电子态密度分布以及它们可能产生的光学跃迁模式.计算结果表明,含F心和F2心的CsI晶体的禁带宽度明显变窄,F心和F2心的能级都出现在禁带中并且作为施主能级位于导带底部,利用过渡态理论计算得到其能级向Cs的5d轨道发生光学跃迁,能量跃迁值分别为1.69eV和1.15eV,该结果与实验结果完全一致,F+心没有能级出现在禁带中.计算结果从理论上成功地解释了碘化铯晶体经过辐照后电子型色心所产生的吸收带起源问题.     

Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy

Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in wurtzite InN, deposited by molecular beam epitaxy on (0001) sapphire substrates or GaN buffer layers. The GaN buffer layer was used as VEELS reference. At room temperature a band transition for wurtzite InN was found at (1.7±0.2 eV) and for wurtzite GaN at (3.3±0.2 eV) that are ascribed to the fundamental bandgap. Additional band transitions could be identified at higher and lower energy losses. The latter may be related to transitions involving defect bands. In InN, neither oxygen related crystal phases nor indium metal clusters were observed in the areas of the epilayers investigated by VEELS. Consequently, the obtained results mainly describe the properties of the InN host crystal.     

一种由自由电子能带模型计算费米能级的方法

对面心立方（fcc)、体心立方（bcc)和六角密堆积（hcp)三种不同结构的晶体,在假设它们的原胞中包含8个价电子并将价电子近似为自由电子的情况下,采用“自由电子气理论”和“自由电子能带模型”,研究其根据费米球确定的费米能级EF与根据自由电子能带模型计算的平均键能Em。研究结果表明,由自由电子能带模型计算所得3种不同结构晶体（因而电子密度也不一样）的平均键能Em等于各自自由电子系统的费米能级EF。平均键能Em是我们在异质结带阶理论计算中建议的一种参考能级,研究结果在深化对平均键能Em物理实质认识的同时,提供了一种借助于自由电子能带模型计算自由电子系统费米能级EF的新方法。     

Photoionization spectra of silver dimers adsorbed on the surface of a ZnS single crystal

We use the photostimulated luminescence flash method to measure photoionization spectra of Ag₂ clusters adsorbed on the surface of a ZnS single crystal. Adsorbed dimers of silver are prepared by treatment of the surface of a ZnS single crystal in high vacuum with a beam of molecular Ag ₂ ⁺ ions followed by their neutralization. We show that the adsorbed dimers create two types of electron traps at energy levels 1.63 and 1.82 eV below the bottom of the conduction band. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 4, pp. 545–547, July–August, 2007.     

Studying the quantum size effect in LiF-based thin films with Ag and Cu nanoclusters

The characteristic energy of distributions of Ag and Cu nanoclusters in LiF-based thin films is estimated from the slope of the I–V characteristic, built in double logarithmic coordinates logI = f (logU). It is shown that the energy states of small clusters lie above the bottom of the conduction band and form a potential barrier, while the energy states of large clusters lie below the bottom of the conduction band and form a potential well. The change in the positions of energy levels along with nanocluster size and the effect of quantum limitations imposed on the electrical and optical properties of the system are confirmed experimentally.     

Quantum-chemical ab initio study of the crystal-field and charge transfer energies of nanocrystalline Y2O3: Eu

The 4f energy levels and crystal-field parameters for several clusters representing the local coordination surroundings of Eu³⁺ in the bulk and nanocrystalline cubic Y₂O₃: Eu³⁺ crystals are obtained by using a method based on the combination of the DV-X_α calculation and the effective Hamiltonian method initialized by M.F. Reid et al. (J. Phys.: Condens. Matter, 2011, 23: 045501). The results are in reasonable agreement with the measured energy levels and the crystal-field parameters obtained from the least-square fitting. The charge transfer energies are also obtained for all the clusters from the DV-X_α calculation. The results indicate that, compared with the bulk Y₂O₃: Eu³⁺ crystal, the charge transfer band in the excitation spectra is red-shifted in the nanocrystal.     

Ge，Al掺杂锰硅化合物Mn4Si7的第一性原理计算

基于密度泛函理论（DFT）的第一性原理计算方法,对本征Mn4Si7以及Ge,Al单掺杂和共掺杂Mn4Si7的晶体结构,能带结构,态密度以及光学性质进行了计算和分析.计算结果表明：本征态Mn4Si7的禁带宽度为0.810 eV,为直接带隙半导体材料,掺杂后晶体结构稍微变化,禁带宽度减小,且共掺杂时禁带宽度最小,电导率最好.Al以及Ge,Al共同掺杂时会产生杂质能级.掺杂后光子能量向低能级方向移动,光电导率,光吸收,反射系数都有所增大,说明掺杂改善了Mn4Si7的光学性质,从而可以提高光伏发电效率.     

Density functional investigation of structural, electronic and optical properties of Ge-doped ZnO

Recent experiments reported fascinating phenomenon of photoluminescence (PL) blueshift in Ge-doped ZnO. To understand it, we examined the structural, electronic and optical properties of Ge-doped ZnO (ZnO:Ge) systematically by means of density functional theory calculations. Our results show that Ge atoms tend to cluster in heavily doped ZnO. Ge clusters can limit the conductivity of doped ZnO but reinforce the near-band-edge emission. The substitutional Ge for Zn leads to Fermi level pinning in the conduction band, which indicates Ge-doped ZnO is of n-type conductivity character. It is found that the delocalized Ge 4s states hybridize with conduction band bottom, and is dominant in the region near the Fermi level, suggesting that Ge-4s states provides major free carriers in ZnO:Ge crystal. The observed blueshift of PL in Ge-doped ZnO originates from the electron transition energy from the valence band to the empty levels above Fermi level larger than the gap of undoped ZnO. The electron transition between the gap states induced by oxygen vacancy and conduction band minimum may be the origin of the new PL peak at 590 nm.     

Analysis of the optical band positions for manganese (IV) ions in trigonal barium titanium hexafluoride and barium silicon hexafluoride crystals

The optical band positions (or crystal field energy levels) of manganese (IV) ions in trigonal barium titanium hexafluoride and barium silicon hexafluoride crystals are computed from the full diagonalization (of energy matrix) method founded on the two-spin–orbit-parameter model which consists of the effects from both the spin–orbit parameters of dⁿ ion and ligand ions. The computed results are in rational agreement with the experimental values. It is found that the large difference of first excited state splitting ΔE (²E) between the manganese (IV)-doped barium titanium hexafluoride and barium silicon hexafluoride crystals is owing mainly to the great difference of trigonal distortion between the fluorine octahedral clusters in the two host crystals.     

Photoluminescence study of disordering in the cation sublattice of Cu2ZnSnS4

In this study we investigated the influence of the degree of disordering in the cation sublattice on low temperature photoluminescence (PL) properties of Cu₂ZnSnS₄ (CZTS) polycrystals. The degree of disordering was changed by using different cooling rates after post-annealing at elevated temperatures. The results suggest that in the case of higher degree of cation sublattice disorder radiative recombination involving defect clusters dominates at T = 10 K. These defect clusters induce local band gap energy decrease in CZTS. The concentration of defect clusters can be reduced by giving more time for establishing ordering in the crystal lattice. As a result, radiative recombination mechanism changes and band-to-impurity recombination involving deep acceptor defect with ionization energy of about 200 meV starts to dominate in the low temperature PL spectra of CZTS polycrystals.     

X-ray and UV photoemission studies of the thallous iodide phase transformation

The orthorombic to simple cubic thallous halide phase transformation induced by temperature increase is studied by means of X-ray and UV photoelectron spectroscopy. The structural transformation is well evidenced by an abrupt decrease of the binding energy separation between the iodine and the thallium core levels at the phase transition temperature. Valence band spectra recorded for both crystal forms by using the HeI radiation evidence modification in the band structure.     

(001)面任意方向单轴应变硅材料能带结构

首先计算了(001)晶面单轴应变张量,在此基础上采用结合形变势理论的K ·P微扰法建立了在(001)晶面内受任意方向的单轴压/张应力作用时,应变硅材料的能带结构与应力(类型、大小)及晶向的关系模型,进而分析了不同单轴应力(类型、大小)及晶向对应变硅材料导带带边、价带带边、导带分裂能、价带分裂能、禁带宽度的影响.研究结果可为单轴应变硅器件应力及晶向的选择设计提供理论依据. 关键词： 单轴应变硅 K ·P法 能带结构     

碘化铟晶体本征缺陷的第一性原理研究

采用基于密度泛函理论的第一性原理方法,对正交碘化铟（InI）晶体可能存在的6种本征点缺陷（碘空位、铟空位、碘占铟位、铟占碘位、碘间隙、铟间隙）结构进行优化. 通过缺陷形成能的计算,得出各缺陷在生长过程中形成的难易程度;通过态密度的计算,分析出各种缺陷能级位置及其对载流子传输的影响. 结果表明：最主要的低能缺陷铟间隙会引入复合中心和深空穴陷阱,前者降低少数载流子的寿命,后者俘获价带的空穴而降低空穴的迁移率-寿命积. 计算结果为实验中提高InI 晶体载流子的迁移率-寿命积提供理论指导,对获得性能优异的InI核辐射探测材料有重要帮助. 关键词： 碘化铟 形成能 缺陷能级 深空穴陷阱     

CNDO calculations of nickel atom clusters

CNDO molecular orbital calculations for nickel atom clusters containing from one to thirteen atoms in various geometric arrangements are presented. The parameters were selected so that an octahedral Ni₆ cluster had an equilibrium inter-nuclear distance, d band occupancy, binding energy, Fermi level, and d band width approximating those of bulk nickel. For clusters with a given number of atoms the stability always increased in the order linear < planar < three-dimensional cluster. The general assumption that the binding energy per atom in metal clusters is proportional to the number of nearest neighbours is supported by these CNDO calculations although this relation is certainly not exact for small clusters. Examination of the calculated orbitals does not indicate a separation of the d band into one part made up from atomic t_2g orbitals and another from e_g orbitals. Overall the CNDO method appears to present a reasonable approach to calculating properties of small metal clusters.     

Crystal field analysis of energy level structure of the Cr2O3 antiferromagnet

A detailed analysis of the energy level structure of the six-fold coordinated Cr³⁺ ion in the chromium oxide Cr₂O₃ is performed using the exchange charge model of the crystal field theory. Parameters of the crystal field acting on the Cr³⁺ optical electrons are calculated from the crystal structure data for the [CrO₆]⁹⁻ impurity center. The energy levels obtained are compared with the experimental absorption spectra for the considered crystal; a good agreement with experimental data is demonstrated. One possible explanation for the ultraviolet p₁ absorption band is proposed based on the results of crystal field calculations.     

等离子体光子晶体

提出了等离子体光子晶体的概念,研究了电磁波在等离子体光子晶体中的传播规律。从得到的色散曲线看到等离子体光子晶体具有光子能带和能隙结构。数值计算发现,等离子体光子晶体对色散有很大的影响。     

Microscopic theory of the second- and third-order elastic constants of cobalt in a thermodynamic module

The total potential energy of a crystal is presented as an expansion by irreducible interactions in clusters containing pairs of atomic triplets and quadruplets. The potential energy of the clusters in the adiabatic approximation is a function of vectors \(\vec r_{ik}\) connecting the centers of atoms in the clusters. Arguments (basic functions) affecting the potential energy of clusters are found using the model with allowance for the exchange symmetry of atoms and the irreducibility of the considered energies of doublet, triplet, and quadruplet atoms and interactions. This allows us to present arguments of the potential energy in the form of summed integral numbers (latticed sums) multiplied by a fixed value of the crystal unit cell parameter, and to set the numerical values of the potential energy arguments as a function of vectors \(\vec r_{ik}\). A potential corresponding to the thermodynamic additivity concept of crystal energy is selected as the model potential of pairwise interaction. Secondand third-order moduli of the rigidity of Co crystals with A1, A2, and HCP structures are calculated using this model of multiatom interactions.