Structure in the emission from pyrene evaporated films

Emission spectra and decay times of fluorescence of pyrene thin films prepared by evaporation onto substrates at liquid nitrogen temperature were measured. Structure in the emission from films warmed slowly up to higher temperature is found to the higher energy side of the excimer emission band. The decay time is about 410 ns at temperatures between 110 K and 210 K. But the emission from the film warmed up to a temperature above 210 K shows only the excimer emission. These results are discussed in relation to an amorphous structure in the pyrene evaporated thin film.     

Excimer emission of crystalline naphthalene

Excimer emission of naphthalene has been observed in microcrystals obtained by grinding single crystals mechanically and in evaporated films. The emission spectrum of the excimer in the microcrystal was equal to that in the evaporated film. The decay times of both excimer emissions were about 140 ns at 77 K. The temperature dependence of these decay times has been interpreted by the distribution of the excimers in thermal equilibrium between two vibrational states.     

Emission from evaporated anthracene films

Emission spectra, excitation spectra and decay times of fluorescence of anthracene films prepared by evaporation on to substrate cooled with liquid nitrogen were measured. The fluorescence spectra of such films show a broad structureless band. The fluorescence excitation spectra and decay times of the emission in the shorter wavelength side of the band are different from those in the longer wavelength side. The decay times of the emissions on the shorter and longer wavelength sides are about 6.0 and 190 ns, respectively, at liquid nitrogen temperature. It may be that the former emission is due to a crystalline structure and the latter emission to an amorphous structure. Next, in anthracene evaporated films containing tetracene as a dopant, the energy transfer from the host to the guest could be observed and this was attributed to the exciton diffusion through the crystalline structure.     

以表面等离子体为媒介的ZnO薄膜发光增强特性研究

采用两步法制备Si基Ag/ZnO双层结构薄膜,研究了Ag覆盖层的厚度和生长温度T对ZnO近带边发光强度的影响.对于厚度为100 nm的ZnO薄膜,发现Ag覆盖层的最佳厚度仅为8 nm,此时双层薄膜相对于单层ZnO薄膜的发光增强因子η达到最大值8.1;同时还发现,在最佳Ag层厚度下,生长温度T≥300 ℃时生长Ag所获Ag/ZnO双层薄膜的ZnO发光强度比生长温度T≤200 ℃时生长的双层薄膜样品大一倍以上,η ≈ 18.结合对双层薄膜表 关键词： 表面等离子体共振 复合薄膜     

Excimer emission from glassy films of some aromatic hydrocarbons

The fluorescence emission spectra and fluorescence decay times of amorphous films prepared by evaporation of a number of aromatic hydrocarbons on to a substrate cooled with liquid nitrogen were measured. The fluorescence of such films appears to originate from sites where the interaction between neighbouring molecules is of the same kind as that present in the well-known excimer state. The density of such sites is found to be so high as effectively to prevent energy migration. Some interesting exceptions to this behaviour are noted and comparisons drawn with experimental data reported for excimer formation in solution and in the crystalline phase.     

Studies on the electrical conductivity, optical absorption and x-ray diffraction in bismuth thin film

Spectroscopically pure bismuth is evaporated onto glass substrates at different substrate temperature using a Hind Hivac coating plant. The electrical conductivity of bismuth thin films, prepared at different substrate temperatures is measured and thermal activation energy is evaluated. From the recorded optical absorption spectrum in the ultraviolet and visible regions optical band gapE _g is determined. X-ray diffractograms are recorded and lattice parameters are determined.     

Morphological and optical characterization of thermally evaporated copper sulphide thin films

Thin films of Cu₂S on opaque gold layers and quartz substrates at the temperature of 393 K were deposited by a thermal evaporation technique. The surface morphology of the Cu₂S thin films at different thicknesses is investigated by AFM. It is seen that all the films are composed of highly coordinated spherical nano-sized particles well adhered to the substrate. The transmittance and reflectance spectra of Cu₂S thin films on the quartz substrate were recorded by a UV–visible spectrophotometer. The results show that the thermally evaporated Cu₂S thin films have the characteristic transmittance and reflectance suitable for optoelectronic applications. The stoichiometry and surface morphology of a grown Cu₂S thin film were confirmed by energy-dispersive X-ray spectroscopy (EDAX) and scanning electron microscopy (SEM), respectively. The dependence of the refractive index and the extinction coefficient on the photon energy for both the surface film and the opaque gold layer have been determined by ellipsometry. From the spectral behaviour of the absorption coefficient at two distinct absorption regions, a dual-band scheme of optical absorption for a Cu₂S thin film is described. The indirect and direct edges of Cu₂S are found to be about at 0.91 eV and 2.68 eV, respectively.     

An anomalous emission excited near the absorption edge of pyrene crystals

Emission spectra and decay times of the fluorescence excited at the absorption edge region in pyrene crystals were measured. At liquid nitrogen temperature, the fluorescence under the excitation at 390 nm is considered as the excimer emission and its band peak shifts a little to the short wavelength in comparison with that of the excimer emission under the excitation at 360 nm. The emission decay times under the excitation at the 390 nm and 360 nm are about 155 ns and 180 ns, respectively, at liquid nitrogen temperature. The former decay time changes its value abruptly near 127 K. This abrupt change of the decay time may be due to the phase transition in pyrene crystals.     

温度条件对反应电子束蒸发制备TiO2薄膜结构和性能的影响

研究基片温度(120～300 ℃)和热处理温度(400℃)对电子束蒸发TiO₂薄膜的结构和光学性能的影响.XRD分析表明,在120 ℃, 200 ℃和300 ℃的普通玻璃基片上采用电子枪加热蒸发制备的TiO₂薄膜具有非晶态结构,沉积态薄膜经过400 ℃保温1 h的热处理后得到的相为具有(004)取向的锐钛矿相,晶粒大小在3.6～8.1 nm之间.透射谱分析表明,薄膜的折射率随着基片温度的升高而增加;热处理后,薄膜的折射率也相应提高,其原因来自于薄膜的晶化.     

The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing

In order to fabricate AlSb polycrystalline thin films without post annealing, this paper studies a technology of magnetron co-sputtering onto intentionally heated substrate. It compares the structural characteristics and electrical properties of AlSb films which are deposited at different substrate temperatures. It finds that the films prepared at a substrate temperature of 450 oC exhibit an enhanced grain growth with an average grain size of 21 nm and the lattice constant is 0.61562 nm that goes well with unstained lattice constant (0.61355 nm). The ln(σ_dark) ～1/T curves show that the conductivity activation energy is about 0.38 eV when the film is deposited at 450 oC without an annealing. The transmittance and reflectance spectra show that the film deposited at 450 oC has an optical band gap of 1.6 eV. These results indicate that we have prepared AlSb polycrystalline films which do not need a post annealing.     

Growth of AgInSe<Subscript>2</Subscript> on Si(100) substrate by thermal evaporation technique

AgInSe₂ films were prepared by a thermal evaporation technique onto Si(100) substrates at a pressure of 10⁻⁵ mbar. Structural and optical properties of films deposited at 300 and 473 K have been investigated. The film composition was studied by energy dispersive analysis through X-rays. X-ray diffraction patterns indicate that AgInSe₂ films have chalcopyrite structure with strong preferred orientation in the (112) direction. Average vertical crystallite size of 25 nm was observed. The optical energy gaps of 1.20 and 1.90 eV were obtained due to the fundamental absorption edge and a transition originating from crystal field splitting, respectively. Field emission scanning electron microscopy shows loosely packed grains of spherical symmetry with some facets.     

Insulating properties of ultrathin KF layers on Cu(1 0 0): Resonant Auger spectroscopy

Solid-state effects in the creation and decay of K 2p core excitations in thin KF films on Cu(1 0 0) surface have been studied in resonant Auger spectra, excited using synchrotron radiation. The spectra of films of various thickness starting from a single monolayer were measured.The photoabsorption spectra reveal crystal field splitting already at film thickness of about 1 monolayer. The Auger decay spectra of the K 2p⁻¹3d core excitations in films of thickness up to 2 monolayers exhibit a band characteristic of the decay of core ionised states, showing that the excited electron delocalises into substrate before the core hole decays. In thicker films the coexistence of the decay of excited states in the bulk of the KF crystalline film and of ionised states at the KF-metal interface is observed, indicating that the charge transfer probability from the upper layers of the film into the metallic substrate is strongly reduced.     

Atomistic study of deposition process of Al thin film on Cu substrate

In this paper we report molecular dynamics based atomistic simulations of deposition process of Al atoms onto Cu substrate and following nanoindentation process on that nanostructured material. Effects of incident energy on the morphology of deposited thin film and mechanical property of this nanostructured material are emphasized. The results reveal that the morphology of growing film is layer-by-layer-like at incident energy of 0.1-10 eV. The epitaxy mode of film growth is observed at incident energy below 1 eV, but film-mixing mode commences when incident energy increase to 10 eV accompanying with increased disorder of film structure, which improves quality of deposited thin film. Following indentation studies indicate deposited thin films pose lower stiffness than single crystal Al due to considerable amount of defects existed in them, but Cu substrate is strengthened by the interface generated from lattice mismatch between deposited Al thin film and Cu substrate.     

A high-performance, flexible substrate for thin-film media

Advances in magnetic recording tape and flexible disk systems are limited to a large extent by the properties of the substrate, particularly for the case of evaporated or sputtered thin-film media. In this paper we report on the magnetic properties of thin-film media deposited onto a new high-performance polymeric film with improved tensile strength, which can withstand temperatures as high as 600°C without any adverse effects. Good magnetic properties were obtained by oblique incidence evaporation of cobalt films onto the heated substrates.     

The photoconductive effect in Pb2CrO5 thin films prepared by an electron-beam evaporation technique

Photoconductivity in Pb₂CrO₅ thin film prepared by an electron-beam evaporation technique is described. Crystallographically, three kinds of thin films are fabricated which depend on substrate temperature. A sample showing a similar x-ray diffraction profile to the evaporation source material gives the highest photoconductive response. Light illumination from the glass substrate onto the sample improves photoconductivity. A pair of interdigital electrodes is more effective than a pair of planar electrodes on the photoconductive measurement. A band gap energy level of Pb₂CrO₅ thin film is around 2.2–2.4 eV as a result of the spectral photoconductive response.     

Immobilization of pyrene via diethylenetriamine on quartz plate surface for recognition of dicarboxylic acids

A novel photo-luminescence film has been prepared by immobilizing pyrene on a quartz plate surface via diethylenetriamine. Imino structure was intentionally introduced into the long flexible spacer due to their hydrogen bond forming abilities with carboxylic acids. It has been found that the film shows combined monomer and excimer emission of pyrene both in wet and dry states. Steady-state and time-resolved fluorescence emission measurements demonstrated that the excimer emission mainly came from direct excitation of ground state dimers, and/or monomers in aggregated state. The structures of the excimers formed during the excitation are mixtures of “standard excimers” and “distorted excimers” of the fluorophore moieties. Fluorescence lifetime measurements showed that the decay of the film is complex, and a four exponential fit is necessary for getting a satisfied result. The photophysical behavior of the present film could be rationalized by employing the model proposed before. Sensing property studies showed that the emission of the film is sensitive to the presence of dicarboxylic acids, including ethanedioic acid, malonic acid, etc. In contrast, presence of monocarboxylic acids, such as formic acid and acetic acid, had little effect upon the fluorescence emission of the film. Compared with the films taking ethylenediamine or 1,3-diaminopropane as their spacer component, introduction of diethylenetriamine into the spacer improved the performance of the film greatly. In addition, the sensing process is reversible, and the film is stable within a number of months provided it is properly preserved. These characteristics showed that the film is worthwhile for further exploration.     

Influence of solvent on solution processed Cu2ZnSnS4 nanocrystals and annealing induced changes in the optical,structural properties of CZTS film

The well-known quaternary Cu₂ZnSnS₄ (CZTS) chalcogenide thin films are playing an important role in modern technology. The CZTS nanocrystal were successfully prepared by solution method using water, ethylene glycol and ethylenediamine as different solvent. The pure phase material was used for thin film coating by thermal evaporation method. The prepared CZTS thin films were characterized by XRD, Raman spectroscopy, FESEM, XPS and FT-IR spectroscopy. The XRD and Raman spectroscopy analysis revealed the formation of polycrystalline CZTS thin film with tetragonal crystal structure after annealing at 450 ^°C. The oxidation state of the annealed film was studied by XPS. A direct band gap about 1.36 eV was estimated for the film from FT-IR studies, which is nearly close to the optimum value of band gap energy of CZTS materials for best solar cell efficiency. The CZTS annealed thin films are more suitable for using as a p-type absorber layer in a low-cost solar cell.     

STM study of Au(111) growth on mica

Gold films were thermally evaporated in vacuum on heated cleaved mica substrates. The substrate temperature was immediately decreased after finishing the growth. Samples prepared at various temperatures from 580 K to 890 K and evaporation rates smaller than 1 nm/s were studied by a scanning tunneling microscope (STM) under ambient conditions. Structure and defects of Au(111) surfaces were investigated and discussed with respect to growth conditions.     

Thermal emission spectra of CaF2 thin films

Thermal emission spectra of CaF₂ thin films evaporated on Pt plates are measured at elevated temperatures. P-polarized spectra observed at the emission angle of 25° show sharp peaks around phonon frequencies. Considerable changes in the spectra are found for films prepared under different conditions. The spectra of a film heat-treated at 680°C are analysed using the response function based on the virtual-mode theory for ionic slabs, in order to estimate the temperature dependence of the lattice dynamical quantities such as phonon frequency and damping. The temperature dependence is discussed in terms of a theory of phonon anharmonicity.     

Synthesis of P-type transparent conducting silver:indium oxide (AIO) thin films by reactive electron beam evaporation technique

Present paper reports the synthesis, electrical and optical properties of p-type conducting and transparent silver indium oxide (AIO) thin films prepared on glass substrates by reactive electron beam evaporation technique at three substrate temperatures (50, 200 and 250 °C) and at five evaporation rates (0.05 to 16.0 nm/s). The source material is pure powders of Ag₂O:In₂O₃=50:50 mol%. The AIO films are amorphous. The films, though not corresponding to Delafossite crystal structure, exhibit p-type conductivity, when prepared at an evaporation rate of 0.05 nm/s at all the three substrate temperatures. With increasing filament current, it is observed that (i) the electrical resistivity decreases and (ii) the refractive index of the films (at 632.8 nm, and is in the range: 1.219-1.211) decreases. The work function (effective Fermi level) has been measured on these samples by Kelvin Probe method. The results are explained on the basis of partial ionic charge and localization of covalent bonds in the AIO thin films.