Valence band state densities of tetrahedrally coordinated amorphous semiconductors

A novel technique, for obtaining the valence band state densities (VBSD's) of tetrahedrally coordinated amorphous semiconductors from normal incidence reflectance data, is applied to Si and Ge and GaP, GaAs and GaSb. The VBSD's of Si and Ge are similar to other published results, obtained by conventional techniques, and cannot be described by broadened crystalline VBSD's. On the other hand, the VBSD's of the 3–5's contain many of the crystalline features. The relation of these results to the structure of the amorphous phase is discussed.     

The photoluminescence excitation spectra of multicomponent media

With no restrictions on the value of optical density, we derive an equation that describes the photoluminescence excitation spectra of separate components with overlapping absorption bands in a multicomponent medium. Based on the equation obtained, we propose methods for measuring the ratios of absorption optical densities of the components and quantum yields of their luminescence. The applicability of the proposed methods is demonstrated by measuring the characteristics of coumarin and porphyrin dissolved in different proportions in ethanol. We have also measured the quantum yield and luminescence decay time of the radiationinduced color centers F ₃ ⁺ in the lithium fluoride crystal and calculated probabilities of radiative and nonradiative transitions from the first excited singlet state of these centers.     

Valence band x-ray emission spectra of compressed germanium

We report measurements of the valence band width in compressed Ge determined from x-ray emission spectra below the Ge K edge. The width of the valence band does not show any pressure dependence in the semiconducting diamond-type structure of Ge below 10 GPa. On the other hand, in the metallic beta-Sn phase above 10 GPa the valence band width increases under compression. Density-functional calculations show an increasing valence band width under compression both in the semiconducting phase (contrary to experiment) and in the metallic beta-Sn phase of Ge (in agreement with observed pressure-induced broadening). The pressure-independent valence band width in the semiconducting phase of Ge appears to require theoretical advances beyond the density-functional theory or the GW approximation.     

Final-state effects in the excitation spectra of deep impurities in semiconductors

The excitation spectra of deep impurities have usually been interpreted in terms of transitions to continuum states having the same energy distribution and Bloch-like character as the perfect-crystal band states. Here we provide theoretical analysis and experimental evidence showing that deep-level spectra may in fact be dominated by bound and quasibound final states induced by the strong short-range impurity potentials.     

Valence band and core-level photoemission spectra of black phosphorus single crystals

Valence band structures of black phosphorus have been measured by synchrotron-radiation photoemission spectroscopy. The excitation photon-energy dependence of the spectra has provided information about the 3s-3p hybridization. As for inner core-levels, binding energies of 2p and 2s core-levels, $\text{2p}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{?2p}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ splitting, and the bulk plasmon energy are estimated from X-ray photoemission spectroscopy.     

Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si

The photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K. A second line, also identified as intrinsic, dominates the spectra below 100 K. A biaxial tensile strain is proposed to account for the two intrinsic lines through a splitting of the valence band degeneracy.     

Variation of double-peak structure in photoluminescence spectra from porous silicon with excitation wavelength

We have systematically observed at room temperature the variations of photoluminescence(PL) from porous silicon(PS) with excitation wavelength in a range from 260 to 460nm at 20nm intervals. In the range from 260 to 320nm, the PL spectra for one of the two studied samples show clear double-peak structure. Each spectrum can be fitted by two Gaussian functions with their peaks centered at about 610nm and 710nm, respectively. The peak position and the full width at half maximum of the two Gaussian functions change little with excitation wavelength. The above phenomena seem hard to interpret using the quantum confinement model, but can be understood in the quantum confinement/luminescence centers model (G.G.Qin and Y.Q.Jia, Solid State Commun. 86, 559(1993)), if we suppose that there are two kinds of luminescence centers adsorbed on the surfaces of nane-scale silicon (NS) units or situated in the SiO_x layers covering the NS units in PS.     

Long-lived excited states and photoluminescence excitation spectra in single crystals of fullerene C60

Photoluminescence, optical absorption spectra, and photoluminescence excitation spectra were measured on large (2–3 mm), very pure crystals of fullerene C₆₀ at 5 K. It is shown that the main contribution to the photoluminescence of these crystals is from singlet and triplet excitons captured on crystal defects. The concentration of these defects does not exceed 10¹⁸ cm⁻²³, and the lifetime of triplet excitons on these defects is about 3 ms. It is shown that the symmetry distortion of the C₆₀ molecules at the defects is rather large and causes the oscillator strength of the zero-phonon optical transitions to be comparable to the most intense optical transitions with the participation of intramolecular vibrations. Zh. éksp. Teor. Fiz. 113, 734–746 (February 1998)     

Hot electron and hot phonon contributions to radiative emission spectra in CdS at high excitation intensities

The dependence of excitation frequency of photoluminescence spectral shape of CdS at high excitation intensities allowed discrimination between hot phonon and hot electron contributions to the broadening of the emission band on one side and the broadening due to many body effects on the other. It was found that the shift towards lower energies of the emission peak is mainly due to induced high carrier density and that the broadening is related to the presence of high densities of optical phonons and hot carriers.     

Traces of the evolution from Mott insulator to a band insulator in the pair excitation spectra

We inspect the fundamental difference between the correlated band insulators (BI) and the Mott insulators (MI) from the perspective of the dynamical pair excitations. To this end, we investigated the physics of the two-plane Hubbard model by employing the well-tested dynamical mean field theory (DMFT) together with the quantum Monte Carlo (QMC) method. At half-filling our results clearly indicate that while the spectral weight of the pair excitation becomes minimal at MI which corresponds to a diminishing of the double occupancy, the opposite occurs at BI. We then discuss the effect of doping and find that the correlated band insulator and the Mott insulator robust at low doping concentration and the metallic state emerges at larger doping. The pair spectral function demonstrates that the metallic state of doped MI is strongly different from that of doped BI and it is readily reflected in the lineshape of the spectra. We discuss the implication of our results in the context of the two-particle spectroscopy.     

Influence of the external deformation on the polarization of hot photoluminescence of the acceptor-conduction band in cubic semiconductors

The uniaxial deformation, varying the wave functions and energies of acceptor sublevels, leads to an essential change in the polarization of hot photoluminescence in semiconductors. The polarization characteristics of photoluminescence caused by recombination of hot and thermalized electrons with the holes bound at shallow-level acceptors with the simultaneous effect of the external magnetic field and uniaxial deformation have been calculated. It has been shown that the comparison of theoretical and experimental results will make it possible to refine some parameters of impurities in crystals.     

HVPE外延GaN膜中黄带的光致发光激发谱研究

测量了氢化物气相外延方法生长的非特意掺杂和掺碳GaN外延膜的光致发光谱，并在光致发光谱峰位2．25eV(550nm)附近分别测量了光致发光激发谱，对两者进行了比较．从光致发光谱中发现掺碳使黄带明显增强，从光致发光激发谱中看到了掺碳引起的约3．38～2．67eV(367～465nn)范围内的特征激发带．利用CC曲线模型说明了特征激发带和黄带之间的关系，分析了黄带的可能起因．     

B and C band excitation and emission spectra in KI:T1

Abstract

We present the excitation spectra of KI:T1 measured in the region of the B and C absorption bands at several emission wavelengths and at 20 K, 80 K and 300 K. An accurate analysis of these spectra shows new properties of the excitation spectra, that we relate to the non radiative relaxation of the excited electrons towards the luminescent states.     

Valence band states of semi-magnetic semiconductors: Cd1-xMnxTe

Valence band electron states of Cd_1-xMn_xTe mixed crystals were determined over the composition range 0?x?0.7 by ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). A peak at 3.5 eV binding energy (BE) whose magnitude increases with the manganese mole fraction x was identified as originating from the Mn 3d⁵ level. A previously reported structure at 6.5 eV BE was also observed for x>0.4; it is, however, believed to be a satellite of the 3.5 eV peak originating from a shake-up process.     

Electroreflectance of bound excitonic states in semiconductors

While first-derivative spectroscopy (thermoreflectance, piezoreflectance, wavelength derivative modulation) has a general validity, no matter whether one is studying interband or excitonic transitions (involving also bound states), things are more complex in the case of electroreflectance (ER). As a matter of fact, Aspnes and Rowe's third-derivative theory does not include bound excitonic states. Using a phenomenological approach one can see that only in the case of a strong mixing between d³ε_r/dE³ and d³ε₁/dE³ it is possible to observe a qualitative agreement between Δε and d³ε/dE³ in some particular cases where Wannier excitonic series gives a predominant contribution to the optical spectra.