Optical absorption in layered MnGaInS<Subscript>4</Subscript> single crystals

Optical absorption in MnGaInS₄ single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E _gd and E _gi are −5.06 × 10⁻⁴ and −5.35 × 10⁻⁴ eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.     

Pressure and temperature dependence of Raman scattering and optical absorption in crystalline S4N4

Raman scattering and optical absorption in crystalline S₄N₄ have been measured both as a function of pressure at 295 K and low temperatures. Polarized single crystal Raman data were also obtained as an aid in the assignment of the Raman active phonons. The pressure coefficients of the Raman active external and S-S stretching modes show a discontinuity near 7 kbar indicative of a second order phase change. The optical absorption edge at about 2.5 eV of a sublimed film of S₄N₄ shows red shifts of 1.3 × 10^?5 eV bar^?1 and 6.3 × 10^?4 eV K^?1 with pressure and temperature respectively. In the light of these results, the electronic, vibrational and structural properties of the crystal are discussed.     

Optical band-gap of Zn3As2

Absorption measurements of single Zn₃As₂ crystals were made at temperatures 5, 80 and 300 K. Free-carrier absorption is interpreted in the simple classical model. Interband absorption shows contributions from Urbach-like excitations. The direct optical gap has been estimated as 0.99 eV at 300 K, 1.09 eV at 80 K and 1.11 eV at 5 K. The linear dependence of band-gap on temperature was found in the range 80–300 K with dE_g/dT = ? 4.55 × 10^?4eVK^?1.     

Temperature dependence of the fundamental absorption edge in CuGaSe2

The temperature dependence of the fundamental absorption edge in CuGaSe₂ single crystals was determined in the temperature range from 15 to 300 K. Above about 120 K the gap energy changes linearly with temperature with dE_g/dT = ? (2.1 ± 0.1) eV K^?1. The downshift in dE_g/dT of the I–III–VI₂ compounds compared to their II–VI analogs is discussed accounting for the p-d hybridization of the uppermost valence band.     

Electrical conduction and 1ƒ noise in Li-DOPED MnO

Electrical resistivity, thermoelectric power and current noise were measured on Li-doped MnO single crystals in the temperature range from 300 to 1000 K. Below 700 K the crystals are p-type and the activation energy of the resistivity is 0.75 eV. Around 700 K the activation energy changes from 0.75 to 1.25 eV owing to a change from p- to n-type conduction. The depth of the Li acceptor is found to be 0.65 eV. From resistivity and thermoelectric power data it is concluded that the bandgap in first approximation can be written as E_s(T) = E_o ? γT between 750 and 1000 K, with E_o = 1.9 eV and γ = 6 × 10^?4 eV/K. The current noise spectra show $\text{1}\text{?}$ noise. The magnitude of the $\text{1}\text{?}$ noise is strongly temperature dependent. From the noise data it is deduced that E_o = 2.2 eV and γ = 10^?3 eV/K in the temperature range 430–700 K.     

Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals

The absorption edge of undoped Tl₂Ga₂S₃Se crystals have been studied through transmission and reflection measurements in the wavelength range 440–1100 nm and in the temperature range 10–300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature γ=−2.6×10⁻⁴ eV/K and the absolute zero value of the band gap energy E_gi(0)=2.42 eV were obtained.     

Indirect electronic transitions in alkali halate crystals-I (sodium and potassium chlorate crystals)

The long wavelength tail of the fundamental absorption in NaClO₃ and KClO₃ crystals has been analysed based on the theory of band to band transitions of Bardeen et al.[8] developed in the case of semi-conducting crystals. Evidence of phonon involvement in the transitions giving an indirect band gap is observed. The energies of the phonons involved in the process are the same for both the crystals, and agree well with combinations of prinicple frequencies of ClO₃^? ion, their overtones and also lattice phonons. The indirect band gap in these crystals varies with temperature more or less linearly and the rate of variation is ?3·8 × 10^?4 eV/K and ?5·0 × 10^?4 eV/K for sodium chlorate and potassium chlorate respectively.     

Transient optical absorption induced by an electron pulse in KPb<Subscript>2</Subscript>Cl<Subscript>5</Subscript> crystals

The efficiency of formation and time evolution of radiation-induced structural defects and pulsed luminescence in KPb₂Cl₅ crystals under the action of a single electron pulse (E = 250 keV, τ = 20 ns) have been investigated. The spectra (1.1–3.8 eV) and relaxation kinetics (time interval 5 × 10^?8?5 s) of transient optical absorption and the pulsed cathodoluminescence spectra and decay kinetics (1.4–3.1 eV) have been measured in the temperature range 80–300 K. It is revealed that the induced optical density and its time evolution depend strongly on temperature, and the absorption relaxation time contains several components and reaches several seconds at T = 300 K. The decay kinetics of transient absorption and pulsed cathodoluminescence kinetics have different orders and are controlled by different relaxation processes.     

Determination of the dielectric function of MnIn2S4 single crystals by spectroscopic ellipsometry

The dielectric function of MnIn₂S₄ single crystals grown by the directional crystallization method was measured over the energy range 0.7–4.7 eV at room temperature using variable angle spectroscopic ellipsometry. The spectral dependence of the real and imaginary parts of the complex dielectric function as well as of the refractive index, extinction and absorption coefficients and the normal-incidence reflectivity for MnIn₂S₄ in the photon energy range studied was determined.     

Optical properties of Tl2In2Se3S layered single crystals

The optical properties of Tl₂In₂Se₃S layered single crystals have been analyzed using transmission and reflection measurements in the wavelength region between 500 and 1100 nm. The optical indirect transitions with a band gap energy of 1.96 eV and direct transitions with a band gap energy of 2.16 eV were determined from analysis of absorption data at room temperature. Dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters – oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index – were found to be 4.67 eV, 45.35 eV, 1.38 × 10¹⁴ m ^{? 2} and 3.27, respectively. Transmission measurements were also performed in the temperature range 10–300 K. As a result of temperature-dependent transmission measurements, the rate of change in the indirect band gap with temperature, i.e. γ = ?5.6 × 10^?4 eV/K, and the absolute zero value of the band gap energy, E _gi(0) = 2.09 eV, were obtained.     

Fundamental absorption edge and urbach rule in lithium hydride single crystals

The fundamental absorption edge of optically transparent lithium hydride single crystals grown from the melt by Bridgman—Stockbarger method has been investigated in the temperature range 77–594K. The absorption edge behaviour proved to obey the Urbach rule at temperatures above 200 K. The values of σ₀, ħω₀ and K₀ were found to be 0.96, 5.05 eV and 2.5 × 10⁶ cm⁻¹, respectively. It was shown that the absorption edge was originated mainly by the acoustic phonons. Using the obtained value of σ₀, the ionicity and the exciton-phonon interaction constant in LiH single crystals have been estimated.     

Pressure dependence of the absorption edge for Cd1-xMnxTe

The effect of pressure on the optical absorption edge of mixed crystals Cd_1-xMn_xTe with different manganese concentrations is reported. The observed absorption edge shifts to higher energy with increasing pressure at a rate of α=7?8×10^?3 eV/kbar and a second order coefficient of β=-4×10^?5 eV/kbar² for x<0.5, to lower energy with increasing pressure at a rate of α=-5.0 ×10^?3 eV/kbar for x?0.5. A phase transition occurs for all the samples studied. The absorption edge of the new phase is outside the wavenumber range of the instrument. The physical origins of different pressure coefficients are discussed in the light of the deformation potentials of energy band states and the hybridization of the Mn²⁺ 3d levels with the p-like states in the valence band.     

Pressure dependent optical absorption edge shift and compressibility of CdCr2Se4 single crystals

The pressure shift of the optical absorption edge (dE_g/dp = (1.1 ± 0.1) × 10^?6 eV bar^?1) and the compressibility (κ = (1.3 ± 0.) × 10^?6 bar^?1) of single crystalline CdCr₂Se₄ have been measured at ambient temperature. These data suggest an interpretation of the fundamental absorption in terms of either p → p interband or p → localized d charge transfer transitions, but exclude excitations involving s-band states.     

Diffusionskonstante und charakteristische Absorption vor der Bandkante von Mn in ZnO-Kristallen

ZnO single crystals were doped with Mn and Co by diffusion. In the temperature range from 1400–1600 K the Mn and Co-diffusion-constants were determined:D _Mn=3.2 · 10^?3 exp (?2.87 eV/kT) cm² sec^?1 andD _Co=1·10exp(?3.98 eV/kT) cm² sec^?1. The Mn doped ZnO crystals show a characteristic colour due to an absorption near the intrinsic absorption edge. The corresponding absorption spectra were measured forE⊥c andE∥c. A discussion of different absorption mechanism shows that a charge-transfer transition is responsible for this absorption.     

Magnetization behaviour of DyAl2 single crystals

We report the theoretical interpretation of the magnetization and the magnetocrystalline anisotropy of ferromagnetic DyAl₂ single crystals between 4.2 and 60 K and magnetic fields up to 15 T. Good agreement between theory and experiment is obtained by using three temperature independent parameters: the two crystal field parameters B₄ = (?0.50 ± 0.05) × 10^?4 meV, B₆ = ? (0.51 ± 0.05) × 10^?6 meV and the Curie temperature T_c = (62 ± 2) K.     

Anisotropy of the hopping conductivity in TlGaSe2 single crystals

The temperature dependences of the conductivities parallel and perpendicular to the layers in layered TlGaSe₂ single crystals are investigated in the temperature range from 10 K to 293 K. It is shown that hopping conduction with a variable hopping length among localized states near the Fermi level takes place in TlGaSe₂ single crystals in the low-temperature range, both along and across the layers. Hopping conduction along the layers begins to prevail over conduction in an allowed band only at very low temperatures (10–30 K), whereas hopping conduction across the layers is observed at fairly high temperatures (T?210 K) and spans a broader temperature range. The density of states near the Fermi level is determined, N _F=1.3×10¹⁹eV·cm³)^?1, along with the energy scatter of these states J=0.011 eV and the hopping lengths at various temperatures. The hopping length R along the layers of TlGaSe₂ single crystals increases from 130 Å to 170 Å as the temperature is lowered from 30 K to 10 K. The temperature dependence of the degree of anisotropy of the conductivity of TlGaSe₂ single crystals is investigated.     

Indirect electronic transitions in alkali halate crystals-II (sodium bromate and iodate) crystals

In the case of NaClO₃ and KClO₃ crystals, analysis of the long wavelength tail of their fundamental absorption revealed the active participation of the internal vibrations of the chlorate ion (Part I). In order to test the validity of the above interpretation the absorption spectra of two more halates with different anions namely sodium bromate and sodium iodate are analysed in a manner similar to that given in Part I. It is found that the principle internal vibrations of bromate and iodate ions are involved in the indirect transitions. The variation of indirect band gap with temperature is found to be ?2·5 × 10^?4 eV/K and ?2·9 × 10^?4 eV/K for sodium bromate and sodium iodate respectively.     

Absorption of Dy3+ and Nd3+ ions in BaR 2F8 single crystals

The Dy³⁺ absorption and excitation spectra of BaY₂F₈ and BaYb₂F₈ single crystals are investigated in the ultraviolet, vacuum ultraviolet, and visible ranges at a temperature of 300 K. These crystals exhibit intense broad absorption bands due to the spin-allowed 4f-5d transitions in the range (56–78) × 10^?3 cm^?1 and less intense absorption bands that correspond to the spin-forbidden transitions in the range (50–56) × 10^?3 cm^?1. The Nd³⁺ absorption spectra of BaY₂F₈ single crystals are studied in the range (34–82) × 10^?3 cm^?1 at 300 K for different crystal orientations.     

Optical absorption edge in SnS

Optical absorption in single crystals of tin sulfide has been studied at many temperatures between 100 and 300 °K, in the wavelength range 2·2–0·8 μ. From the interference fringe patterns the absorption coefficient, reflection coefficient and index of refraction as a function of wavelength were determined for two light polarizations (ε∥a and ε∥b). From an analysis of the data, indirect band gaps of 1·142 and 1·095 eV were found for the two directions of polarization. Also it was found that the phonon assisted transitions required the participation of two phonons at different energy thresholds with energies 0·033 or 0·038 eV and 0·082 or 0·113 eV, with reference to the two axis. The temperature dependence of the indirect band gap for each direction of light polarization is linear with a slope ?4·05 × 10^?3eV and ?4·37 × 10^?3 eV respectively.     

Dependence of the fundamental absorption edge of CdInGaS4 on hydrostatic pressure

The optical absorption of CdInGaS₄ single crystals has been measured over a hydrostatic pressure range up to 40 kbar in the 2.0–3.0 eV photon energy range at room temperature. The interband gap for the indirect allowed transition was found to have a pressure coefficient, dEg/dP, of +6.4 × 10^-6ev/bar.