Dissolution of Si in Al–Si Melts. Effect of Sb on the Crystallization Process and As-cast Structure of Al–Si Alloys

The effect of Sb on the dissolution of Si single crystals (face {111}) in Al–Si melts is studied. The dissolution isotherms at three temperatures and fixed undersaturation are obtained. The experimental data are treated according to the Bliznakov's ratio. Some conclusions are made with reference to the crystal growth process. A probable mechanism of the influence of Sb on the structure of Al–Si alloys is given.     

Irradiation-induced changes in the local environment of Si and Al in LnSiAlON glasses as probed by Al and Si NMR

Two compounds have been studied: an oxide glass from the Y-Si-Al-O system and an oxynitride glass from the Y-Si-Al-O-N system, both bombarded with Sn-ions (975 MeV, fluences ranging from 10¹² to 2.7 × 10¹³ Sn/cm²). The changes in the environment of the silicon and the aluminium were investigated using NMR spectroscopy. Irradiation by Sn ions leads to a loss of nitrogen in the silicon and probably the aluminium environments. Part of the aluminium changes from a network former coordination to a network modifier coordination while the oxide silicate network exhibits a higher cross-linking due to an increase of the population of bridging oxygen. Part of the aluminium in five-fold coordination is formed at the expense of aluminium in six-fold coordination in the case of the oxynitride glass and the changes in the silicon environment occur at lower fluences than for the oxide glass.     

F-19 NMR study of the ordering of high field strength cations at fluoride sites in silicate and aluminosilicate glasses

Several glasses were synthesized to explore cation ordering at fluorine sites in silicate and aluminosilicate glasses. Utilizing ¹⁹F NMR, we found a significant (at least ∼30% of the total intensity) amount of the fluorine signal to be due to F-Mg(n) (fluorine with an unknown number of exclusively Mg²⁺ nearest neighbors) bonding in the Mg-aluminosilicates. By combining this with previous data on Ca- and Ba-aluminosilicate glasses, we demonstrated a clear trend of an increasing amount of F-M(n) type bonding with increasing field strength of the network modifying cation. This indicates that the higher field strength cations can more effectively compete with Al³⁺ for fluorine bonds. The mixed-modifier (Na,La)-silicate glasses have primarily F-M(n) type bonding, with a pronounced preference for bonding to the higher field strength La³⁺ over Na⁺. In addition, Si-F bonding was found in the (Na,La)-silicate glasses at a level (∼2% of the total intensity) comparable to that found in other silicate glasses, suggesting that Si-F bonding is consistently present in silicate glasses. The (Na,La)-silicate glasses also had unusually short spin-spin relaxation times, suggesting short (similar to crystalline fluorides) fluorine-fluorine distances in environments associated with La³⁺.     

N-type doping of GaN/Si(1 1 1) using Al0.2Ga0.8N/ALN composite buffer layer and Al0.2Ga0.8N/GaN superlattice

The characteristics of Si-doped and undoped GaN/Si(1 1 1) heteroepitaxy with composite buffer layer (CBL) and superlattice are compared and discussed. While as-grown Si-doped GaN/Si(1 1 1) heteroepitaxy shows lower quality compared to undoped GaN, crack-free n-type and undoped GaN with the thickness of 1200 nm were obtained by metalorganic chemical vapor deposition (MOCVD). In order to achieve the crack-free GaN on Si(1 1 1), we have introduced the scheme of multiple buffer layers; composite buffer layer of Al_0.2Ga_0.8N/AlN and superlattice of Al_0.2Ga_0.8N/GaN on 2-in. Si(1 1 1) substrate, simultaneously. The FWHM values of the double-crystal X-ray diffractometry (DCXRD) rocking curves were 823 arcsec and 745 arcsec for n-GaN and undoped GaN/Si(1 1 1) heteroepitaxy, respectively. The average dislocation density on GaN surface was measured as 3.85×10⁹ and 1.32×10⁹ cm⁻² for n-GaN and undoped GaN epitaxy by 2-D images of atomic force microscopy (AFM). Point analysis of photoluminescence (PL) spectra was performed for evaluating the optical properties of the GaN epitaxy. We also implemented PL mapping, which showed the distribution of edge emission peaks onto the 2 inch whole Si(1 1 1) wafers. The average FWHMs of the band edge emission peak was 367.1 and 367.0 nm related with 3.377 and 3.378 eV, respectively, using 325 nm He-Cd laser as an excitation source under room temperature.     

Rapid quenching and glass formation in chalcogenide glasses: Preparation and properties of Ge–As–Te glasses over an extended composition ranges

In Ge–As–Te system, the glass forming region determined by normal melt quenching method has two regions (GFR I and GFR II) separated by few compositions gap. With a simple laboratory built twin roller apparatus, we have succeeded in preparing Ge_7.5As_xTe_92.5−x glasses over extended composition ranges. A distinct change in T_g is observed at x = 40, exactly at which the separation of the glass forming regions occur indicating the changes in the connectivity and the rigidity of the structural network. The maximum observed in glass transition (T_g) at x = 55 corresponding to the average coordination number (Z_av) = 2.70 is an evidence for the shift of the rigidity percolation threshold (RPT) from Z_av = 2.40 as predicted by the recent theories. The glass forming tendency (K_gl) and ΔT (=T_c−T_g) is low for the glasses in the GFR I and high for the glasses in the GFR II.     

Modeling oxide glasses with Born–Mayer–Huggins potentials: Effect of composition on structural changes

Using Born–Mayer–Huggins potentials, a molecular dynamics model of a series of 5-oxide (SiO₂, B₂O₃, Na₂O, Al₂O₃, and ZrO₂) glasses of various compositions was developed. The evolution of the glass structure according to the composition provides an overview of the behavior of each species. Some experimental observations were correctly reproduced, e.g., the gradual incorporation of the boron in the silicate network, the attraction of sodium atoms by four-coordinate boron, and the shorter distances between network formers and non-bridging oxygen atoms. Moreover, direct visualization of the structures reveals boron-enriched segregation zones in a composition containing no aluminum, as well as smaller regions comprising only aluminum atoms.     

Local structural environment and intra-4f transition of rare-earth ion in chalcogenide glass: Comparison between Dy-doped Ge–As–S and Ge–Ga–S glasses

We have employed Dy L₃-edge extended X-ray absorption fine structure measurements to investigate the local structures of Dy doped in Ge–As–S and Ge–Ga–S glasses. It turned out that Dy–S distance on average is conspicuously longer in Ge–Ga–S glass despite the number of the nearest neighboring S atoms being nearly identical with each other. The enhanced rare-earth solubility of Ge–Ga–S glass is then explained in connection with decrease in covalence of Ga–S bonds compared with Ge–S or As–S bonds, and structural correlation between GaS₄ tetrahedra and Dy. The discrepancy in the local structural environments of trivalent Dy, however, results in no significant changes in the spectral lineshape and the mean energy of its intra-4f-configurational transitions.     

Structure of the grain boundary region in an Al–15 at.% Zn and Al–2.0 at.% Zn–1.3 at.% Mg alloy aged at elevated temperatures

The results of TEM investigations are presented of the effects of various solutions and ageing treatments, cooling and quenching rates as well as of tensile stress at elevated temperatures on the microstructure of the grain boundary (GB) region of the examined Al Zn and Al Zn Mg alloys. A pronounced influence was found of partial coherency of GB stable β(Zn) precipitates with the α matrix in the Al Zn alloy on the asymmetry of Zn depleted GB region and on the shape of GB precipitates. The role of GB's as sources and sinks of vacancies and the effect of stress gradients in GB regions were emphasized in the establishment of differences in the nucleation and decomposition characteristics within the GB region as compared to those within the grain interior. The existence of a negative stress gradient towards the GB has been suggested to lead to the observed gradual retardation of transformation kinetics within the GB region in Al Zn alloys. A rapid quench from annealing to ageing temperature introduced large local stresses close to GB giving rise to “band of precipitates” on subsequent ageing within the former precipitate free region (PFZ) in Al Zn Mg alloy. Similar enhancement of local stresses accompanied by acceleration of decomposition kinetics was also observed in the aged Al Zn sample subjected to a prior tensile creep exposure within the one-phase region.     

Non-stoichiometric non-bridging oxygens and five-coordinated aluminum in alkaline earth aluminosilicate glasses: Effect of modifier cation size

Both non-bridging oxygen (NBO) and high-coordinated aluminum (commonly ^VAl at atmospheric pressure) are believed to play important roles in the thermodynamic and transport properties of aluminosilicate melts but their changes with composition are not well understood, particularly in compositions that are charge-balanced or contain excess alumina. Here we present high-resolution ²⁷Al and ¹⁷O MAS NMR data on barium aluminosilicate glasses, similar to previously studied calcium and potassium aluminosilicate glasses, allowing us to separate the effect of cation size versus cation charge. The NBO content decreases with increasing Al content but shows no significant difference compared to similar calcium aluminosilicate glasses. As there is a significant difference between similar potassium and calcium aluminosilicate glasses, this indicates that cation charge may be the important parameter in determining the amount of NBO present on the charge-balanced join. The ^VAl content increases with increasing Al content but is significantly lower than similar calcium aluminosilicate glasses. This data, together with the data from potassium and calcium aluminosilicate glasses, agrees with the well-known effect of increasing high coordinated aluminum with higher cation field. In contrast, the lack of changes observed in the “non-stoichiometric” NBO content despite the changes in the ^VAl content provides additional evidence to suggest that the formation of NBO and ^VAl is not linked.     

Electrical and dielectric properties of Sb2O3–V2O5–K2O glasses

Electric measurements, including temperature dependencies of direct electrical conductivity and temperature dependencies of complex electrical modulus, have been implemented using Sb₂O₃–V₂O₅–K₂O glass samples. These glasses absorb ambient humidity but their resistance to water attack depends on composition. The significant decrease of conductivity up to 100 °C can arise from water desorption. Cycling measurements of direct electrical conductivity versus temperature were also implemented. They show that the 30Sb₂O₃–30V₂O₅–40K₂O and 70Sb₂O₃–30K₂O glasses are irreversibly damaged with the formation of the hydrated layer. In addition, it was observed that the evolution of DC conductivity is ruled by Arrhenius relation, while activation energy decreases as Sb₂O₃ concentration increases.     

Energetics of CdSxSe1−x quantum dots in borosilicate glasses

The thermodynamics of CdSe quantum dots embedded in a glass matrix is of great interest because of the numerous applications as optical materials. In this study, the energetics and stability of CdSe quantum dots in a borosilicate glass matrix is investigated as a function of size using high-temperature oxide melt solution calorimetry. CdS_0.1Se_0.9 nanoparticles (1-40 nm) embedded in glass were analyzed by photoluminescence spectroscopy, electron microprobe, X-ray fluorescence, high-energy synchrotron X-ray diffraction, and (scanning) transmission electron microscopy using both electron energy loss and energy dispersive X-ray spectroscopy. As CdSe particles coarsen, their heat of formation becomes more exothermic. The interfacial energy of CdSe QDs embedded in a borosilicate glass, determined from the slope of enthalpy of drop solution versus calculated surface area, is 0.56 ± 0.01 J/m².     

The Ln–Ba–Cu–O (Ln = Lanthanoid) systems: Compounds and compatibilities in air at 900–980°C

Comparison of phases observed in air at 900–980°C in the Ln–Ba–Cu–O (Ln = Lanthanoid) systems is reported. On the basis of the occurrence of compounds found in these Ln₂O₃–BaCO₃–CuO systems they must be divided into at least three subgroups: the first is characteristic of La, Pr and Nd, the second specific for Sm and Eu, and the third common to the smaller lanthanoids, the Y-type elements, with some variation within the groups.     

Microstructure and phase transformation of Ti3AC2 (A = Al,Si) in hydrofluoric acid solution

In this paper, Ti₃AC₂ (A = Al, Si) were prepared by pressureless argon shielding synthesis technique. The microstructure and phase transformation of as‐prepared Ti₃AC₂ (A = Al, Si) in hydrothermal hydrofluoric acid (HF) solution were investigated systematically. Results showed that the obtained Ti₃AlC₂ and Ti₃SiC₂ were closely aligned layered structure. In hydrothermal HF solution, Al or Si element was preferentially etched from the layered structure, inducing obvious transformation of microstructure and phase composition. For Ti₃AlC₂, Al atoms diffused out of the structure and reacted with HF to form AlF₃•H₂O, which induced the rearrangement of the Ti and C atoms, and finally resulted in the formation of TiC_x cubic phase. With the hydrothermal temperature and reaction time increasing, the TiC_x phase gradually disappeared and the grain size of AlF₃•H₂O gradually increased. When Ti₃SiC₂ was immersed in hydrothermal HF solution, the main products were TiC and SiC. Interestingly, with the hydrothermal treatment temperature and reaction time increasing, TiC gradually disappeared, while SiC nearly kept unchanged. This can be explained that SiC was covalently bonded carbide, while TiC was metallically bonded, having relatively weak bond energy and consequently being unstable in hydrothermal HF solution.     

Viscosity matching of new PbF2–InF3–GaF3 based fluoride glasses and ZBLAN for high NA optical fiber

New multicomponent PbF₂–InF₃–GaF₃ bulk glasses have been investigated. They show lower phonon energy (540 cm⁻¹) in comparison with 580 cm⁻¹ for ZBLAN. Large PbF₂ concentration provided glasses with high refractive index up to 1.582 and the viscosity curves revealed an excellent thermal compatibility with ZBLAYN glass. A multimode fiber with a numerical aperture of 0.51, a loss of 0.85 dB/m at 1.3 μm was fabricated using the rotational casting method.     

B NMR investigations in xV2O5–B2O3 and xV2O5–B2O3–PbO glasses

11B (I=3/2) MAS NMR in the binary glass system xV₂O₅–B₂O₃ (x=0.053, 0.43) and the ternary glass system xV₂O₅–B₂O₃–PbO (0.1x1.5) has been investigated at room temperature. In the xV₂O₅–B₂O₃ glasses, one NMR line due to BO₃ unit was observed. Meanwhile in the xV₂O₅–B₂O₃–PbO, two NMR lines which arise from BO₃ and BO₄ units were detected, where the appearance of BO₄ units is produced by the presence of PbO. From the computer-simulation of the ¹¹B NMR central transition line (m=−1/2↔1/2), the quadrupole parameters (e²qQ/h and η) for BO₃ units in xV₂O₅–B₂O₃, and those for BO₃ and BO₄ units in xV₂O₅–B₂O₃–PbO were obtained as a function of x. As the V₂O₅ content increases in xV₂O₅–B₂O₃–PbO, the e²qQ/h and η values of the BO₃⁻ associated resonance are found to slightly decrease and increase, respectively. Meanwhile, the e²qQ/h and η values of BO₄⁻ associated resonance in xV₂O₅–B₂O₃–PbO are found to slightly increase and decrease, respectively. By comparing the intensities of the total transitions (m=−3/2↔−1/2,m=−1/2↔1/2, and 1/2↔3/2) for the ¹¹B NMR line of BO₃ and BO₄ units contained in xV₂O₅–B₂O₃–PbO with those of respective standard samples of 0.053V₂O₅–B₂O₃ and NaBH₄, the quantitative fractions of BO₃ and BO₄ in xV₂O₅–B₂O₃–PbO were obtained as a function of x.     

Study of electrical properties of MoO3–Fe2O3–P2O5 and SrO–Fe2O3–P2O5 glasses by impedance spectroscopy. II

The electrical and dielectric properties for three series of MoO₃–Fe₂O₃–P₂O₅ and one series of SrO–Fe₂O₃–P₂O₅ glasses were measured by impedance spectroscopy in the frequency range from 0.01 Hz to 3 MHz and over the temperature range from 303 to 473 K. It was shown in Part I that the MoO₃ is incorporated into phosphate network and the structure/properties are strongly influenced by the overall O/P ratio. The Fe₂O₃ content and Fe(II)/Fe_tot ratio in these glasses have significant effects on the electrical conductivity and dielectric permittivity. With decreasing Fe₂O₃ content in MoO₃–Fe₂O₃–P₂O₅ glasses with O/P at 3.5 the dc conductivity, σ_dc(ω) decreases for two orders of magnitude, which indicates that the conductivity for these glasses depends on Fe₂O₃ and is independent of the MoO₃ content. Also, the dielectric properties such as ^′(ω), ^″(ω) and σ_ac(ω) and their variation with frequency and temperature indicates a decrease in relaxation intensity with increase in the concentration of MoO₃. On the other hand, the dc conductivity for MoO₃–Fe₂O₃–P₂O₅ glasses with O/P > 3.5 increases with the substitution of MoO₃ which has been explained by an increase in the number of non-bridging oxygens and formation of Fe–O–P bonds that are responsible for formation of small polarons. The increase in the dielectric permittivity, ^′(ω) with increasing MoO₃ content is attributed to the increase in the deformation of glass network with increasing bonding defects. For SrO–Fe₂O₃–P₂O₅ glasses the conductivity and dielectric permittivity remained constant with increasing SrO.     

Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4

The dislocation structure at the initial stage of relaxation of Ge_xSi_1−x films (x∼0.4–0.8) grown on Si (0 0 1) substrates tilted at 6° to the nearest (1 1 1) plane is studied. The use of Si substrates tilted away from the exact (0 0 1) orientation for epitaxial growth of Ge_xSi_1−x films (x≥0.4) allowed finding the basic mechanism of formation of edge dislocations that eliminate the mismatch stresses. Though the edge dislocations are defined as sessile dislocations, they are formed in accordance with the slipping mechanism proposed previously by Kvam et al. (1990). It is highly probable that a 60° misfit dislocation (MD) propagating by the slipping mechanism provokes the nucleation of a complementary 60° MD slipping in a mirror-like tilted plane (1 1 1). The reaction between these dislocations leads to the formation of an edge MD that ensures more effective reconciliation of the discrepancy. Comparative estimation of the slip velocities of the primary and induced 60° MDs and also of the resultant 90° MD is fulfilled. The slip velocity of the induced 60° MD is appreciably greater than the velocity of the primary 60° MD. Therefore, the induced MD “catches up” with the second front of the primary MD, thus forming a 90° MD propagating to both sides due to slipping of the 60° MDs forming it. The propagation velocity of the 90° MD is also greater than the slip velocity of a single 60° MD. For these reasons, 90° MDs under certain conditions that favor their formation and propagation can become the main defects responsible for plastic relaxation of GeSi films close to Ge in terms of their composition.     

P–T–X phase equilibrium and vapor pressure scanning of non-stoichiometry in the Cd–Zn–Te system

Technical applications of artificial crystals strongly depend on tailoring the defect structure. In compound semiconductors, native defect concentration is closely related to non-stoichiometry. Vapor pressure scanning (VPS) is a direct high precision method of in situ investigation of the composition of non-stoichiometric crystals at high temperatures. It is based on experimental measurements of the vapor pressure, from which three-dimensional P–T–X (pressure–temperature–composition) range of existence of the crystalline phase is outlined. In this communication VPS data on non-stoichiometry in the Cd–Zn–Te system are presented. Geometrical analysis of the phase equilibrium is performed, and composition of the crystal, melt and vapor is determined in the technologically most important melting region. It will be shown how to apply experimental P–T–X phase equilibrium data for preparation of the material with pre-determined composition, either stoichiometric or with a certain deviation from stoichiometry. Different technologies are analyzed: vapor-phase growth, vertical, horizontal and high-pressure Bridgman. VPS has proved to be a powerful analytical tool. For CdZnTe the accuracy of the VPS determination of non-stoichiometry was shown to be as high as 10⁻⁴ at.% for temperatures up to the melting point.