原子电负性和极化度对卤代甲烷C 1s电子电离能的影响

以原子的电负性χP和极化度α为基本参数, 估算卤代甲烷CHnY4−n−mZm(Y, Z=F, Cl, Br, I) C 1s电子电离能的电荷效应和松弛效应. 电荷效应由C—H和C—Y(Z)键两端原子的电负性差来度量, 松弛效应由碳原子带的电荷乘上氢和卤素原子极化度来衡量, 进而用电荷效应和松弛效应一起表达卤代甲烷中C 1s电子电离能的静电-松弛屏蔽效应ΔSi. 将ΔSi代入类-Slater模型, 得到卤代甲烷中C 1s电子电离能E1,C的估算方程, 该方程的相关系数r=0.99987, 对27个卤代甲烷的计算值与实验值之间的平均绝对误差仅为0.038 eV, 小于实验误差0.1 eV. 同时, 用留一法(leave-one-out)进行交叉验证(相关系数rcv=0.99977, 预测值与实验值之间的绝对平均误差只有0.049 eV), 结果表明所得方程具有良好的预测能力和稳定性.     

Electronic structure of 1 to 2 nm diameter silicon core/shell nanocrystals: surface chemistry, optical spectra, charge transfer, and doping

Static and time-dependent density functional calculations, geometrically optimized and including all electrons, are described for silicon nanocrystals as large as Si(87)H(76), which contains 163 atoms. We explore and predict the effect that different sp(3) passivation schemes-F or H termination, thin oxide shell, or alkane termination-have on the HOMO and LUMO, on the optical spectra, and on electron transfer properties. Electronegativity comparisons are a useful guide in understanding the observed deviation from the simple quantum size effect model. Nanocrystals containing Al or P impurity atoms, either on the surface or in the interior, are explored to understand electrical doping in strongly quantum-confined nanocrystals. Surface dangling bonds are found to participate in internal charge transfer with P atom dopant electrons.     

Analysis of competing bonding parameters. Part 2. The structure of halosilanes and halogermanes (MH4−nXn,n=1–4; M=Si,Ge; X=F,Cl, Br)

A qualitative rationalization of bonding patterns in halosilanes and halogermanes (MH_4−nX_n, n=1–4; M=Si, Ge; X=F, Cl, Br) is presented. Geometrical and bonding properties in these molecules are discussed on the basis of ab initio molecular orbital calculations employing the natural bond orbital population analysis. The results have been compared with data derived previously for halomethanes. Differences in the n-dependence of the M–Cl and M–Br bond lengths for M=C, Si, Ge are explained by a significant reduction in the closed-shell repulsion between the halide atoms. As M gets larger, a continuous decrease in the X–M–X bond angle is observed. Small bond angles (for n=2, 3) are favoured by the p-rich M orbitals in the M–X bonds. They are opposed, however, by the X⋯X repulsion. As M gets larger, the X⋯X separation for a given bond angle increases. A reduction in the X–M–X bond angle is therefore accomplished without overcompensation due to the X⋯X repulsion energy. The variation in the charge density at M as a function of n has been rationalized by differences in the electronegativity of the terminal atoms H and X. Dipole moments have been computed for the molecules in the series. As in the fluoromethanes, a maximum in the dipole moments at n=2 is explained by a combination of geometric and electronic properties unique to the fluoro-compounds. These are, an n-independent charge density at the F sites and a significant decrease in the M–F bond distance as n increases.     

Bonding behavior and thermal stability of C54Si6: a first-principles molecular dynamics study

By using a self-consistent plane-waves density functional approach we study the bonding behavior and the thermal properties of C(54)Si(6) heterofullerenes. Calculations are carried out by employing a generalized gradient approximation. Our investigation improves upon previous findings on the same system obtained via the local density approximation approach. This is due to a much larger search in configurational space and the explicit account of temperature effects. Overall, isomers can be classified in two groups. In the first, nearest-neighboring Si atoms form a subnetwork, while in the second the Si atoms are farther apart on the cage. In addition to structural optimization, we carried out first-principles molecular dynamics for temperatures up to T=3000 K on a time interval of 12 ps. These simulations show that Si-Si bond variations with temperature are less important when all Si atoms are found on a hexagon. Therefore, this structural arrangement is the most likely to be observed experimentally. Analysis of charge topology reveals that the amount of charge on each atom depends on the number of heterogeneous bonds, due to a significant charge transfer from the Si to the neighboring C atoms.     

The role of the Auger parameter in XPS studies of nickel metal, halides and oxides

The critical role of the Auger parameter in providing insight into both initial state and final state factors affecting measured XPS binding energies is illustrated by analysis of Ni 2p(3/2) and L(3)M(45)M(45) peaks as well as the Auger parameters of nickel alloys, halides, oxide, hydroxide and oxy-hydroxide. Analyses of the metal and alloys are consistent with other works, showing that final state relaxation shifts, ΔR, are determined predominantly by changes in the d electron population and are insensitive to inter-atomic charge transfer. The nickel halide Auger parameters are dominated by initial state effects, Δε, with increasing positive charge on the core nickel ion induced by increasing electronegativity of the ligands. This effect is much greater than the final state shifts; however, the degree of covalency is reflected in the Wagner plot where the more polarizable iodide and bromide have greater ΔR. The initial state shift for NiO is much smaller than those of Ni(OH)(2) or NiOOH and the effective oxidation state is much less than that inferred from the average electronegativity of the ligand(s). Auger parameter analysis indicates that the bonding in NiO appears to have stronger contributions from initial state charge transfer from the oxygen ligands than that in the hydroxide and oxyhydroxide consistent with the considerable differences in the Ni-O bond lengths in these compounds with some relaxation of this state occurring during final state phenomena. The Auger parameter of NiOOH is, however, shifted positively, like the iodide, indicating greater polarizability of the ligands and covalency in this bonding. There is support for more direct use of relative bond lengths in interpreting differences between related compounds rather than more general electronegativity or similar parameters.     

DFT-B3LYP, NPA-, and QTAIM-based study of the physical properties of [M(II)(H2O)2(15-crown-5)] (M = Mn, Fe, Co, Ni, Cu, Zn) complexes

A density functional theory study of the structure of the title compounds with the divalent metal ions in their high-spin ground state, obtained using B3LYP/6-311++G(d,p) in vacuo and in aqueous solution simulated using a polarized continuum medium, is reported for the first time. The modeling reproduces the pseudo pentagonal bipyramidal crystallographic structures very well, including some asymmetry in the equatorial bonds lengths to the crown ether O donors. The very marked asymmetry in the Ni(2+) structure due to a Jahn-Teller distortion of a d(8) system in a D(5h) ligand field is also well reproduced. The gas phase binding energies of the complexes follow the order Mn(2+) < Fe(2+) < Co(2+) < Ni(2+) < Cu(2+) > Zn(2+), in precise agreement with the Irving-William series. Both the NPA and Bader charges show there is ligand-to-metal charge transfer; however, the values obtained from the NPA procedure, unlike those obtained from Bader's quantum theory of molecules approach, do not correlate with the electronegativity of the metal ions, the stabilization energies of the solvated complexes or the ionic radii of the metal ions, and so appear to be less reliable. The nature of the bonding between the ligands and the metal ions has been explored using the topological properties of the electron charge density. The metal-ligand bond distances were found to be exponentially correlated with the electron charge density, its Laplacian, and with its curvature in the direction of the bond path at M-O bond critical points. While the bonding with coordinated H(2)O is predominantly ionic, that to the crown ether donor atoms has some covalent character the extent of which increases across the first transition series. The delocalization indices of M-O bonds in these complexes correlate reasonably well with the electron density and its Laplacian at the bond critical points; this therefore provides a rapid and computationally very efficient way of determining these properties, from which insight into the nature of the bonding can be obtained, obviating the need for time-consuming integration over atomic basins.     

Stable highly doped C60-mSim heterofullerenes: a first principles study of C40Si20, C36Si24, and C30Si30

Geometry optimization within the framework of density functional theory provides clear evidence of stable fullerene-like cage structures for C(40)Si(20), C(36)Si(24), and C(30)Si(30). In the case of C(40)Si(20), an extensive isomer search shows that the most stable arrangements are those in which the Si atoms and the C atoms form two distinct homogeneous subnetworks. Any other configuration corresponding to spatially separated sets of Si atoms leads to a decrease of the binding energy. Due to charge transfer from Si to C atoms, opposite charges are found in neighboring Si and C sites. Structural stability is ensured via the predominant occurrence of 3-fold bonding for both species.     

First-Principles Study of Bi-Doping Effects in Hg0.75Cd0.25Te

First-principles calculations based on density functional theory have been performed for exploring the structural and electronic properties of Bi-doped Hg_0.75Cd_0.25Te (MCT), using the state-of-the-art computational method with the Heyd–Scuseria–Ernzerhof (HSE) of hybrid functional to correct the band gap. Structural relaxations, charge densities, electron localization functions (ELFs), density of states (DOSs), band structures, and band decomposed charge density were obtained to reveal the amphoteric behavior of Bi in Hg_0.75Cd_0.25Te. The bonding characteristics between Bi and host atoms were discussed by analyzing charge densities and ELFs. The influence of Bi impurity on the electronic structure of Bi-doped Hg_0.75Cd_0.25Te was also analyzed by the calculated DOSs, band structures, and the band decomposed charge density of the defect band. It has been demonstrated that Bi can show a typical amphoteric substitution effect of group V elements.     

N, P, and As ylides and aza- and arsa-Wittig reactions from topological analyses of electron density

The nature of bonding between N, P, and As constituent atoms in ylide systems with the R(3)XYR' formula (X = N, P, As; Y = N, P, As; R = F, H; R' = H, CH(3)) has been characterized by ab initio (MP2/6-311++G**) and density functional theory (B3LYP/6-311++G**) calculations. Its electronic structure has been analyzed through electron density with the quantum theory of atoms in molecules and the electron localization function (ELF). The characteristics of the central bond are inspected with the calculated rotational barriers. The results show that N has a behavior different from that of the remaining pnicogen atoms (P, As), where the bond is much stronger. Fluorine substituents strengthen the X-Y bond, reduce the bond distance, and increase the electron density in the central bond so that the substituent pulls charge from the bond in the pnicogen X atom. For the N-pnicogen ylides, the results showed different bonding characters between F and X atoms; depending on the position of the F atom, the difference of the bond character is sensed by the basin synaptic order, as it is deduced from the analysis of the ELF basins. The energy profiles of the rotational barriers have been calculated at the MP2/6-311++G** level, indicating that the electronegativity of the substituents is a relevant factor that has consequences in the characteristics of the X-Y bond.     

Halide coordination of perhalocyclohexasilane Si6X12 (X=Cl or Br)

The addition of halide anions (X' = Cl(-), Br(-), or I(-)) to perhalocyclohexasilane Si(6)X(12) (X = Cl or Br) led to the formation of complexes comprising [Si(6)X(12)X'(2)](2-) dianions. An upfield shift in the (29)Si NMR spectra was noted upon coordination, and structural determination by X-ray crystallography showed that the dianions adopt an "inverse sandwich" structure where the six cyclic silicon atoms form a planar hexagon with the two halide anions X' located on the 6-fold axis equally disposed above and below the plane of the Si(6) ring. Additionally, these apical X' atoms are within the van der Waals bonding distance to the silicon ring atoms, indicating a strong interaction between X' and silicon atoms. These results detail crystallographic variations within the halogen series providing further insight into the nature of the Lewis acid sites above and below the Si(6)X(12) ring, where interactions with hard Lewis bases such as halide anions are observed. Interestingly, the stereochemistry of the silicon atoms in [Si(6)X(12)X'(2)](2-) is not affected much by the size or electronegativity of the halogen atoms.     

Electronegativities of elements in covalent crystals

A new electronegativity table of elements in covalent crystals with different bonding electrons and the most common coordination numbers is suggested on the basis of covalent potentials of atoms in crystals. For a given element, the electronegativity increases with increasing number of bonding electrons and decreases with increasing coordination number. Particularly, the ionicity of a covalent bond in different environments can be well-reflected by current electronegativity values; that is, the ionicity of chemical bonds increases as the coordination number of the bonded atoms increases. We show that this electronegativity scale can be successfully applied to predict the hardness of covalent and polar covalent crystals, which will be very useful for studying various chemical and physical properties of covalent materials.     

X-ray fluorescent spectroscopy study of the charge state of heteroatoms in organic compounds of third row elements. 6. Realationship between SKα shifts and magnitudes of charges on the sulfur atoms,determined from quantum chemical calculations

The dependences of the shifts of the SK-line on the magnitude of the effective charge on the sulfur atom, found by the electronegativity equalization method, agree well with those in which the charges on the sulfur atoms are calculated by ab initio and CNDO/S quantum chemical methods. The dependences of the shifts of the SK-line (E=S, P, Cl, Si) on the magnitudes of the effective charge on the E atoms, found by equalization of the electronegativities, can be successfully used to determine the magnitudes of the charge on the E atoms on the same charge magnitude scale.For previous communication, see [1].Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 11, pp. 2517–2518, November, 1989.     

Structure and electronic properties of PbnM (M=C, Al, In, Mg, Sr, Ba, and Pb; n=8, 10, 12, and 14) clusters: theoretical investigations based on first principles calculations

A systematic theoretical study of the PbnM (M=C, Al, In, Mg, Sr, Ba, and Pb; n=8, 10, 12, and 14) clusters have been investigated to explore the effect of impurity atoms on the structure and electronic properties of lead clusters. The calculations were carried out using the density functional theory with generalized gradient approximation for exchange-correlation potential. Extensive search based on large numbers of initial configurations has been carried out to locate the stable isomers of PbnM clusters. The results revealed that the location of the impurity atom depends on the nature of interaction between the impurity atom and the host cluster and the size of the impurity atom. Whereas, the impurity atoms smaller than Pb favor to occupy the endohedral position, the larger atoms form exohedral capping of the host cluster. The stability of these clusters has been analyzed based on the average binding energy, interaction energy of the impurity atoms, and the energy gap between the highest occupied and lowest unoccupied energy levels (HLG). Based on the energetics, it is found that p-p interaction dominates over the s-p interaction and smaller size atoms interact more strongly. The stability analysis of these clusters suggests that, while the substitution of Pb by C or Al enhances the stability of the Pbn clusters, Mg lowers the stability. Further investigations of the stability of PbnM clusters reveal that the interplay between the atomic and electronic structure is crucial to understand the stability of these clusters. The energy gap analysis reveals that, while the substitution of Mg atom widens the HLG, all other elements reduce the gap of the PbnM clusters.     

A valence bond study of three-center four-electron pi bonding: electronegativity vs electroneutrality

Three-center four-electron (3c4e) pi bonding systems analogous to that of the ozone molecule have been studied using modern valence bond theory. Molecules studied herein consist of combinations of first row atoms C, N, and O with the addition of H atoms where appropriate in order to preserve the 3c4e pi system. Breathing orbital valence bond (BOVB) calculations were preformed at the B3LYP/6-31G**-optimized geometries in order to determine structural weights, pi charge distributions, resonance energies, and pi bond energies. It is found that the most weighted VB structure depends on atomic electronegativity and charge distribution, with electronegativity as the dominant factor. By nature, these systems are delocalized, and therefore, resonance energy is the main contributor to pi bond energies. Molecules with a single dominant VB structure have low resonance energies and therefore low pi bond energies.     

Ab initio calculations, electronegativity equalisation and group electronegativity

A correspondence betweenab initio calculations, the principle of electronegativity equalisation and group electronegativity has been established within the framework of Mulliken population analysis. Using this we have calculated electronegativities of some 37 groups/atoms. These electronegativities show excellent linear correlation with¹ J _CC coupling constants in monosubstituted benzenes and Inamoto’si scale and a satisfactory one with Wells’ group electronegativity data. The correspondence however required a scaling of charge (obtained byab initio calculations) and a proportionality between the electronegativity of the neutral group and its hardness. It is shown that using these electronegativity values it is possible to calculate group charges in molecules where groups under consideration interact with each other through σ bond only.     

SAPO-34分子筛合成中的主客体电荷平衡与硅分布(英文)

SAPO-34分子筛的硅磷酸铝组成与菱沸石笼结构孔道促进了甲醇高效转化为乙烯、丙烯(MTO)的反应,以其为催化剂的工业过程不断取得进步.然而,MTO反应过程中SAPO-34分子筛的迅速失活成为困扰该过程的重要问题.研究发现,反应中形成的多环芳烃阻塞了SAPO-34分子筛晶粒表面的笼结构孔道,甲醇分子难以向晶体内部扩散,致使分子筛在其活性中心未曾充分利用之前便己失活.为此,纳米晶粒SAPO-34的合成引起了人们的广泛兴趣,通过提高分子筛晶体的利用率有限地延长了催化剂的MTO反应寿命.但反应后催化剂的结焦量明显增加,说明引起SAPO-34结焦的因素不因晶粒的减小而受到抑制.我们曾研究了无硅A1P04-34分子筛的MTO反应,发现初始活性良好的催化剂在未结焦的情况下却因为活性中心的缺失而失活.显然,SAPO-34的MTO反应活性及其结焦均与其酸性密切相关,而酸性取决于其结构中的硅含量与硅分布.我们通过单晶结构解析获得了二乙胺(DEA)与哌嗪(PIPZ)导向合成SAPO-34的晶体结构,并从文献获得了四乙基氢氧化铵(TEAOH)、三乙胺(TEA)、吗啉(MOR)为模板剂合成SAPO-34的晶体结构.按照SAPO-34结构中菱沸石笼内形成的模板剂阳离子的电荷数(R)对不同模板剂导向合成的SAPO-34加以分类:TEAOH,TEA(R~+);DEA,MOR(2R~+);PIPZ(2R~(2+)).它们不因SAPO-34合成条件的变化而改变.依据分子筛骨架负电荷与SAPO-34菱沸石笼内模板剂阳离子正电荷平衡的原则(主客体电荷平衡),模板剂的类型决定SAPO-34骨架负电荷数,即引入硅形成的酸中心密度;酸中心的强度则取决于合成体系中硅的加入量.由此可以给出不同类型模板剂导向合成SAPO-34骨架中的最低硅含量(形成隔离硅原子).R~+型模板剂SiO_2/Al_2O_3为0.11;2R~+型模板剂为0.22;2R~(2+)型模板剂为0.44.合成体系中硅加入量的增加,会在SAPO-34骨架中形成"硅岛"结构.然而,我们的研究表明,"硅岛"的形成同样受到主客体电荷平衡原则的制约.通过结构分析发现,一个独立的"五硅岛"至少为6个相邻的菱沸石笼所分享,而每个"五硅岛"仅能形成3个负电荷.以R~+型模板剂导向合成的SAPO-34为例,需要6个骨架负电荷来平衡6个菱沸石笼中的R~+电荷,因此,除了"五硅岛"的3个负电荷,还要在这些笼骨架上形成3个"孤立"硅原子.该类模板剂导向合成SAPO-34,形成"五硅岛"的最低SiO_2/Al_2O_3摩尔比(硅含量)为0.45.进一步分析可知,在相邻的7个菱沸石笼之间可以分别形成"八硅岛"、"十一硅岛",而"十四硅岛"只能形成于相邻的10个菱沸石笼之间.同理,每种"硅岛"的形成都要伴随相应数目的"孤立"硅原子共同来平衡菱沸石笼内的R~+电荷.对于以2R~+型模板剂导向合成的SAPO-34,仍然是6个相邻的菱沸石笼分享"五硅岛",但是,每个菱沸石笼内的正电荷阳离子数增加了一倍,为满足主客体电荷平衡,需要形成更多"孤立"硅原子.由此可见,随着菱沸石笼内模板剂电荷数的增加,骨架的负电荷密度增大,给SAPO-34带来了更多酸中心,无论硅以"孤立"硅原子形式分布,还是形成"硅岛".同时,"硅岛"伴随"孤立"硅原子的共同存在也使我们理解了~(29)Si MAS NMR中的一个独特现象:在硅含量很高时形成了"硅岛",可是却存在着很强的属于"孤立"硅原子的谱峰.     

Indirect adsorbate-adsorbate interactions mediated through the surface electronic structure of the Si(100) surface

Indirect adsorbate-adsorbate interactions between adsorbed ammonia (NH3) molecules on the Si(100) surface are investigated using density functional theory. Two different nonlocal effects mediated through the surface electronic structure are observed: "poisoning" and hydrogen bonding. We find that adsorbed NH3 "poisons" adsorption of NH3 on neighboring Si dimers on the same side of the dimer row whereas neighboring NH2(a) groups favor this configuration. Adsorption of NH3 involves charge transfer to the surface that localizes on neighboring Si dimer atoms, preventing adsorption of NH3 at these sites. These indirect interactions are similar to Friedel-type interactions observed on metal surfaces with an estimated range of less than 7.8 A on the Si(100) surface. These interactions may be manipulated to construct local ordering of the adsorbates on the surface.     

Electronic structure of ZrCuSiAs and ZrCuSiP by X-ray photoelectron and absorption spectroscopy

The electronic structures of quaternary pnictides ZrCuSiPn (Pn=P, As) were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES). Shifts in the core-line XPS and the XANES spectra indicate that the Zr and Cu atoms are cationic, whereas the Si and Pn atoms are anionic, consistent with expectations from simple bonding models. The Cu 2p XPS and Cu L-edge XANES spectra support the presence of Cu¹⁺. The small magnitudes of the energy shifts in the XPS spectra suggest significant covalent character in the Zr-Si, Zr-Pn, and Cu-Pn bonds. On progressing from ZrCuSiP to ZrCuSiAs, the Si atoms remain largely unaffected, as indicated by the absence of shifts in the Si 2p_3/2 binding energy and the Si L-edge absorption energy, while the charge transfer from metal to Pn atoms becomes less pronounced, as indicated by shifts in the Cu K-edge and Zr K, L-edge absorption energies. The transition from two-dimensional character in LaNiAsO to three-dimensional character in ZrCuSiAs proceeds through the development of Si-Si bonds within the [ZrSi] layer and Zr-As bonds between the [ZrSi] and [CuAs] layers.     

硅晶片上超薄氧化硅层厚度纳米尺寸效应的XPS研究

用X射线光电子能谱(XPS)测定了一系列厚度经过国际比对准确已知的硅晶片上的超薄(1.45nmd7.2nm)氧化硅膜的Si2p电子能谱和价带谱.结果表明:SiO2膜厚d2nm时,Si2p结合能最低,其原因可归结于此时光电离空穴既有来自SiO2中的原子极化对空穴的原子外弛豫,也有来自衬底Si的电荷移动对空穴的屏蔽(有效屏蔽距离大约是(2.5±0.6)nm);当d3nm时Si2p结合能增大,此时只有来自SiO2的原子外弛豫,d较小者的Si2p结合能较高.SiO2的价带电子结构也与其厚度纳米尺寸效应有关:当d2nm时价带中SiO2的O2p非成键电子峰的相对强度较强,O2p—Si3p和O2p—Si3s成键电子峰较弱.