Doping mode, band structure and photocatalytic mechanism of B-N-codoped TiO2

The photocatalyst B and N codoped TiO₂ (B-N-TiO₂) was prepared via the sol-gel method by using boric acid and ammonia as B and N precursors. The doping mode, band structure and photocatalytic mechanism of B-N-TiO₂ were investigated well and elucidated in detail. B-N-TiO₂ showed the narrowed band gap and thus extended the optical absorption due to interstitial N and [NOB] species in the TiO₂ crystal lattice. The coexistence of interstitial N and [NOB] species in the TiO₂ crystal lattice and surface NO_x species allowed the more efficient utilization of visible light. Simultaneously, interstitial [NOB] and N species and surface B₂O₃ and NO_x species facilitated the separation of photo generated electrons and holes and suppress their recombination effectively. Hence, B-N-TiO₂ showed a higher photocatalytic activity than pure TiO₂, N-doped TiO₂ (N-TiO₂) and B-doped TiO₂ (B-TiO₂) under both UV and visible light irradiation.     

Energy band structure and Frenkel excitons in PbGa2S4

Optical reflection spectra are measured and calculated in PbGa₂S₄ crystals in the region of resonances related to excitons with large oscillator strength and binding energy (Frenkel excitons). The splitting of the upper valence band in the center of the Brillouin zone due to crystal field (Δ_cf) and spin orbit (Δ_so) interaction are determined. Optical reflection spectra are measured and calculated according to Kramers-Kronig relations in the region of 3-6 eV in Е⊥с and Е∥с polarizations, and the optical constants n, k, ε₁ and ε₂ are determined. The observed electronic transitions in PbGa₂S₄ crystals are discussed in the frame of theoretical energy band structure calculation for thiogallate crystals.     

First-principles energy band calculation for undoped and S-doped TiO2 with anatase structure

The electronic structure of S-doped TiO₂ with an optimized anatase structure was calculated within the framework of the density functional theory (DFT). For the calculation we built four kinds of supercells; type-A and B supercells consist of 12 and 48 atoms and a centered Ti atom is substituted for an S atom, while type-C and D supercells consist of 12 and 48 atoms and a centered O atom is substituted for an S atom. The supercells (type-B and D) were employed to adjust the S-concentration in TiO₂ to an experimental value of a few %. The changes of the lattice parameters are not significant in the type-A and B supercells. The phase transition from the tetragonal to the orthorhombic occurs in the type-C and D supercells. In the small supercell (type-A), S-related states are located in the range of −1.6 to 0 eV, and the S-states are band-like. In contrast, in the large supercell (type-B), S-related states appeared at about 0.9 eV above the top of the valence band, and the S-states are atomic-like. The localization of the S-related states is remarkable in the type-B supercell. In the type-D supercell, the S-related states were merged with the top of the valence band, and as a result the band-gap energy is narrowed by 0.7 eV. Despite a low S-concentration (3%) in the type-D supercell, the S-related states are somewhat band-like.     

Energy band structure of I–III–VI2 semiconductors

We review recent studies of the energy band structure of I-III-VI₂ semiconductors. The structure of the uppermost valence bands of a I-III-VI₂ compound is profoundly influenced by the proximity of noble metal d levels in the valence band. The direct energy gaps observed in I-III-VI₂ compounds are low relative to the energy gaps in the II–VI analogs by amounts up to 1.6eV, and the spin-orbit splittings observed in the ternaries are low relative to the values observed in the binary analogs, owing to a partial cancellation of the positive spin-orbit parameter for p levels and the negative spin-orbit parameter for d levels. The presence of the noble metal d levels in the valence band has been confirmed directly by the observation of electroreflectance structure due to transitions from the d levels themselves to the lowest conduction band minimum.     

TiO2和SiO2薄膜应力的产生机理及实验探索

对最常用的TiO₂和SiO₂薄膜应力, 包括应力模型、应力测试方法和不同实验条件下的应力测试结果作了研究.基于曲率法模型，对TiO₂和SiO₂单层膜和多层膜进行了实验测试，得到了一些有价值的结果，特别是离子辅助淀积和基板温度等工艺参数对薄膜应力的影响.提出了薄膜聚集密度是应力的重要因素，低聚集密度产生张应力，而高聚集密度产生压应力.在多层膜中通过调节工艺参数，适当地控制张应力或压应力，可使累积应力趋向于零. 关键词： 薄膜应力 离子辅助淀积 聚集密度     

Electronic properties and band structure of IrSe2

Transport coefficient measurements (DC conductivity and thermoelectric power) were performed on compacted bars of polycrystalline IrSe₂ in the 100–570 K temperature range. The experimental results are interpeted on the basis of an n-type compensated semiconductor model. At low temperatures, a narrow band which originates from non-stoichiometry mainly participates in the conduction by thermally activated hopping of small polarons. The charge balance adopted by anionic groups is discussed. The schematic band model which is retained takes into account all the transport properties and the ion charge balance Ir³⁺Se^2-(Se₂)^2-_{1/ 2}. Moreover, IrSe₂ has recently been shown to function as a cathode material in lithium batteries.     

Electronic structure of oxygen vacancies in TiO2

Using the scattering theoretical method, we have obtained the changes in the electronic structure induced by ideal vacancies or divacancies in titanium dioxide. No defect states are found in the gap. The creation of vacancy merely induced O-p derived resonances in the valence band and Ti-d derived resonances in the conduction band, due to the reduction of cation coordination. These conclusions are similar to those obtained for ideal TiO₂ surfaces.     

萤石结构TiO2的电子结构和光学性质

利用第一性原理计算了立方相萤石TiO₂的晶胞参数,能带结构和电子态密度.结果显示萤石TiO₂属于间接带隙半导体材料,其间接禁带宽度(Γ→X)E_g为2.07eV,比常见的金红石和锐钛矿TiO₂的禁带宽度窄.为了更清楚地了解萤石的光学性质,利用Kramers-Kronig色散关系,分别对萤石和金红石TiO₂的复介电常数、吸收率等参数进行了计算,并将二者结果做了 关键词： 2')" href="#">萤石结构TiO₂ 密度泛函理论 能带结构 光学性质     

萤石结构TiO2的电子结构和光学性质

利用第一性原理计算了立方相萤石TiO₂的晶胞参数，能带结构和电子态密度.结果显示萤石TiO₂属于间接带隙半导体材料，其间接禁带宽度(Γ→X)E_g为2.07eV，比常见的金红石和锐钛矿TiO₂的禁带宽度窄.为了更清楚地了解萤石的光学性质，利用Kramers-Kronig色散关系，分别对萤石和金红石TiO₂的复介电常数、吸收率等参数进行了计算，并将二者结果做了     

From anodic TiO2 nanotubes to hexagonally ordered TiO2 nanocolumns

We report on the formation of hexagonally ordered TiO₂ nanocolumnar layers by electrochemical oxidation in a fluoride containing electrolyte, using self-organizing nanotube formation conditions at elevated potentials and low temperatures. The influence of the substrate temperature on the nanocolumn morphology and composition is investigated and characterized by FE-SEM and EDX. The origin of these nanocolumns can be attributed to a thickening of the inner tube wall of the double wall structure of self-organized TiO₂ nanotubes. Furthermore, a transition from nanocolumnar to nanotubular structure can be established by changing the applied voltage or applying a post-immersion treatment.     

Composite SiO2/TiO2 and amine polymer/TiO2 nanoparticles produced using plasma-enhanced chemical vapor deposition

Plasma-enhanced chemical vapor deposition was used to conformally coat commercial TiO₂ nanoparticles to create nanocomposite materials. Hexamethyldisiloxane (HMDSO)/O₂ plasmas were used to deposit SiO₂ or SiO_xC_yH_z films, depending on the oxidant concentration; and hexylamine (HexAm) plasmas were used to deposit amorphous amine-containing polymeric films on the TiO₂ nanoparticles. The composite materials were analyzed using Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). These analyses reveal film composition on the nanoparticles was virtually identical to that deposited on flat substrates and that the films deposit a conformal coating on the nanoparticles. The performance of the nanocomposite materials was evaluated using UV-vis spectroscopy to determine the dispersion characteristics of both SiO_x and HexAm coated TiO₂ materials. Notably, the coated materials stay suspended longer in distilled water than the uncoated materials for all deposited films.     

Characterization of TiO2/Au/TiO2 films deposited by magnetron sputtering on polycarbonate substrates

Transparent and conducting TiO₂/Au/TiO₂ (TAuT) films were deposited by reactive magnetron sputtering on polycarbonate substrates to investigate the effect of the Au interlayer on the optical, electrical, and structural properties of the films. In TAuT films, the Au interlayer thickness was kept at 5 nm. Although total thickness was maintained at 100 nm, the stack structure was varied as 50/5/45, 70/5/25, and 90/5/5 nm.In XRD pattern, the intermediate Au films were crystallized, while all TAuT films did not show any diffraction peaks for TiO₂ films with regardless of stack structure. The optical and electrical properties were dependent on the stack structure of the films. The lowest sheet resistance of 23 Ω/□ and highest optical transmittance of 76% at 550 nm were obtained from TiO₂ 90 nm/Au 5 nm/TiO₂ 5 nm films. The work function was dependent on the film stack. The highest work function (4.8 eV) was observed with the TiO₂ 90 nm/Au 5 nm/TiO₂ 5 nm film stack. The TAuT film stack of TiO₂ 90 nm/Au 5 nm/TiO₂ 5 nm films is an optimized stack that may be an alternative candidate for transparent electrodes in flat panel displays.     

Temperature-induced changes in morphology and structure of TiO2-Al2O3 fibers

Electrospinning of a sol-gel and polymer mixture is used to produce titania-alumina (TiO₂-Al₂O₃) fibers with diameters ranging from 200 to 800 nm. These composite metal-oxide fibers were calcined at various temperatures and their morphology is studied using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The decrease in the average diameter of the fibers with increasing temperature is observed. Powder X-ray diffraction (XRD) reveals that up to 800 °C the composite fibers have anatase titania structure whereas at 900 °C the fibers exhibit mixture of anatase and rutile phases. It is found that specific surface area decreases as a function of temperature in the 700-900 °C range. The change in phase (anatase-to-rutile) and the increase in crystallite size occur simultaneously. The presence of smaller amount of amorphous alumina in the primarily titania-based structure seems to play the role in stabilizing the anatase phase.     

Ab initio calculations of band structure and thermophysical properties for SnS2 and SnSe2

The electronic band structure and elastic constants of SnS₂ and SnSe₂ have been calculated by using density-functional theory (DFT). The calculated band structures show that SnS₂ and SnSe₂ are both indirect band gap semiconductors. The upper valence bands originate mainly from S_p and Sn_d electrons, while the lowest conduction bands are mainly from (S, Se) _p and Sn_s states. The calculated elastic constants indicate that the bonding strength along the [100] and [010] direction is stronger than that along the [001] direction and the shear elastic properties of the (010) plane are anisotropic for SnS₂ and SnSe₂. Both compounds exhibit brittle behavior due to their low B/G ratio. Relationships among volumes, the heat capacity, thermal expansion coefficients, entropy, vibrational energy, internal energy, Gibbs energy and temperature at various pressures are also calculated by using the Debye mode in this work.     

Deviation from Kittel's magnetic resonance formula near Tc of CdCr2Se4

Approaching the Curie temperature of the cubic ferromagnet CdCr₂Se₄ from above, the g-factor increasingly shifts from the value predicted by Kittel's formula. In the exchange critical region (susceptibility χ ?1) the g-shift is consistent with δg/g ≈ χ² following from the complex self-energy.     

Raman spectra of TiO2-II,TiO2-III,SnO2, and GeO2 at high pressure

Raman spectra of the orthorhombic (II) and high pressure (III) phases of titanium dioxide at pressures to 372 kbar and effects of temperature and hydrostatic pressure on Raman spectra of the tetagonal cassiterite-like phases of TiO₂, GeO₂ and SnO₂ are described. At room temperature, the TiO₂ II–III transition is sluggish, and metastable coexistence was observed from 200 to 300 kbar. The Raman spectra of TiO₂-III imply that its primitive cell contains at least four formula units; however, the structure could not be established from the Raman spectra and available powder X-ray diffraction patterns.The temperature and pressure dependences of the spectrum of the tetragonal MO₂ phases together with bulk moduli and thermal expansion data were used to evaluate the pure-volume and pure-temperature contributions to the isobaric temperature dependence of the Raman frequencies. Large anharmonicities in TiO₂ are attributed to hybridization of the oxygen p states with the d states of the Ti ion. GeO₂, where p-electron bonding is involved, is much less Enharmonic.     

Ab initio calculations of electronic structure of anatase TiO2

This paper presents the results of the self-consistent calculations on the electronic structure of anatase phase of TiO2. The calculations were performed using the full potential-linearized augmented plane wave method (FP-LAPW)in the framework of the density functional theory (DFT) with the generalized gradient approximation (GGA). The fullyoptimized structure, obtained by minimizing the total energy and atomic forces, is in good agreement with experiment.We also calculated the band structure and the density of states. In particular, the calculated band structure prefers an indirect transition between valence and conduction bands of anatase TiO2, which may be helpful for clarifying theambiguity in other theoretical works.     

Optical spectra and energy band structure of AgAsS2 crystals

Ground and excited states of three exciton series are observed in the region of fundamental absorption edge of AgAsS₂ crystals. The contours of exciton reflection spectra are calculated and the main parameters of excitons and energy bands are determined in the center of Brillouin zone. The optical reflection spectra are investigated at 30 K in E∥c and E⊥c polarizations in AgAsS₂ crystals in the region of 2-6 eV. The optical functions are calculated from the reflection spectra and a scheme of electronic transitions responsible for peculiarities of reflection spectra deep into the absorption band is proposed.