Thermally and photo-induced changes in the valence states of vapour-deposited As2S3 films: A comparative photoemission study of As2S3 and As4S4

During thermal annealing or light irradiation, the changes in the valence states of vapour-deposited As₂S₃ and As₄S₄ films were observed by UPS. The experimental results reveal that an as-deposited As₂S₃ film contains considerable numbers of As₄S₄ molecular units, which polymerize or cross link to form a As₂S₃ glassy network on annealing or irradiation.     

Photoelectron spectra of As4S3, P4S3, P4Se3 and As4O6

The He(I) UV photoelectron spectra of As₄S₃, P₄S₃, P₄Se₃ and As₄O₆ are reported in this paper. The spectra of As₄S₃ and the isostructural molecules P₄S₃ and P₄Se₃ comprise seven broad but clearly defined peaks, whilst the spectrum of As₄O₆ consists of six peaks and two shoulders. By comparing the spectra with one another and with the photoelectron spectra of other arsenic and phosphorus compounds, the character and symmetry species of the highest-energy occupied molecular orbitals of the molecules have been assigned.     

Reversible photo-induced volume changes in evaporated As2S3 and As4Se5Ge1 films

Reversible photo-induced volume changes have been observed accompanying reversible optical absorption edge shift produced by successive cycles of band gap illumination and annealing for well-annealed evaporated As₂S₃ and As₄Se₅Ge₁ films. The As₂S₃ film shows an increase in its volume by illumination, while As₄Se₅Ge₁ film shows a decrease. Qualitative discussion has been given in connection with pressure-induced optical constant change.     

Photo-synthesis of As3S2 crystal from AsAs2S2 mixture

Existence of As₃S₂ compound which is stable in a certain temperature range higher than room temperature has been confirmed in AsAs₂S₂ system. Photo-synthesis effect of As₃S₂ crystal from As and As₂S₂ mixture, namely light induced conversion from a crystalline state to another crystalline state, has also been investigated.     

Electronic structure of As4S5 as a local structural model for amorphous As2S3 film

We have studied the electronic structure of As₄S₅ molecule as a model of the local pyramidal structure in amorphous As₂S₃ film. Emphasis has been put on the analysis of the behaviour of a trapped electron in this model concerning the consequent structural relaxation. It has been found that As₄S₅ species has affinity for an excess electron, and that the attachment of an excess electron promotes the cleavages of specific As-S bonds.     

Conductivity of the chalcogenide semi-insulator system: As2S3Sb2S3

The conductivities of mixed As₂S₃Sb₂S₃ thin films are discussed. Temperature independent a.c. data are interpreted in terms of a hopping mechanism where correlation effects are important. Excepting As₂S₃, which exhibits extrinsic behaviour, the dielectric constant, a.c. conductivity and d.c. conductivity pre-exponential factor, all scale approximately linearly with composition.     

Raman spectra of As4S4 polymorphs: Structural implications for amorphous As2S3 films

Raman-scattering spectra of α-As₄S₄ and β-As₄S₄ have been determined at 300 and 10 K. Although similar in overall aspect, the spectral signatures of the two polymorphs are clearly distinct. We have made a careful comparison of these first-order crystal line spectra to the sharp features reported in the Raman spectra of freshly-deposited films of amorphous As₂S₃. Prior proposals for the presence of As₄S₄ molecules in the unannealed films are supported by these comparisons, but recent contentions that actual microcrystals of β-As₄S₄ are present in the as-deposited material are clearly contradicted by the absence of any of the lattice-phonon lines which are prominent in the crystals at frequencies below 70 cm^-1.     

Infrared properties of AsχTe1−χ glasses

Infrared reflection and transmission measurements in As_χTe_1?χ glasses (45?×?55) show well-defined Gaussian vibrational absorption peaks. Comparisons with spectra observed in crystalline and glassy As₂S₃ and As₂Se₃ indicate that the local order in As_χTe_1?χ glasses is not like that found in crystalline As₂Te₃, but rather it consists primarily of AsTe₃ pyramids which are probably linked together in a fashion similar to that found in As₂S₃ and As₂Se₃.     

Reversible photostructural change in melt-quenched As2S3 glass

Reversible phtodarkening and photostructural change accomplished by repeated cycles of band-gap illumination and annealing have been observed in melt-quenched As₂S₃ glass for the first time. The magnitudes of photo-induced shift of optical absorption edge as well as the fraction of photo-expansion observed in melt-quenched As₂S₃ glass coincide quantitatively with those observed in well-annealed evaporated As₂S₃ glass. The experimental data involving results of crystalline As₂S₃ demonstrate that the reversible photostructural change is “unique” to amorphous state and is not affected by the difference in disordered structure originated from preparation technique.     

ESR in X-irradiated As2O3 glass

X-irradiation of glassy As₂O₃ at 77K or 300K produces an unusually large density (～5×10¹⁸ cm^-3) of paramagnetic centers which are stable at 300K. The average spin-Hamiltonian parameters (g = 1.998, g_⊥ = 1.984, A₆ = 243G, A_⊥ = 114G) indicate that these centers are analogous to those previously observed in As₂Se₃ and As₂S₃ glasses and that they consist of unpaired electrons localized on a non-bonding 4p orbital of an As atom. Unlike the results obtained for As₂Se₃ and As₂S₃, the concommitant holes in As₂O₃ are trapped on Fe²⁺ impurity sites which become Fe³⁺ and not on non-bonding oxygen p orbitals. The radiation induced ESR is also accompanied by a stable optical absorption tail which lies within the band gap and increases exponentially with energy. This absorption can be partially bleached with the application of sub-band-gap light.     

Photoemission study of the density of valence states of amorphous As2S3 and Sb2S3

The densities of valence states of amorphous As₂S₃ and Sb₂S₃ have been investigated by means of X-ray photoemission and ultraviolet photoemission spectroscopy. The spectra are interpreted on the basis of existing band structure calculations.     

Effect of temperature and pressure on the raman spectrum of As4S3

The Raman spectrum of crystalline As₄S₃ has been investigated as a function of temperature from 4 to 430 K at ambient pressure, and as a function of pressure to 70 kbar at ambient temperature. The external mode frequencies which appear clearly separated from the internal modes exhibit stronger pressure and temperature sensitivity compared to the latter modes. At the β-As₄S₃ to α-As₄S₃ phase transition near 410 K, the external modes change discontinuously indicating a first-order phase transition. The internal mode frequencies remain practically unaffected. The $\text{dv}\text{dP}$ and $\text{dv}\text{dT}$ data are analyzed using well established approaches. Application of non-hydrostatic pressure (>60 kbar) appears to destroy the crystallinity of As₄S₃.     

P2S5/NH4OH处理GaAs(100)表面的电子能谱研究

采用俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究了P₂S₅/NH₄OH钝化液处理的GaAs(100)表面的微观特性。AES测量表明,在钝化膜和GaAs衬底之间的界面处无O组分,只有P和S组分。XPS测量分析指出,经过P₂S₅/NH₄OH溶液处理后,GaAs表面处Ga₂O₃和As₂O_{3关键词：}     

光折变法制备的As2S8条形波导的光阻断效应

实验研究了As₂S₈薄膜光折变现象.提出并采用紫外光激励的方法试制了As₂S₈条形波导，导模激励显示该波导具有良好的导波特性.在此基础上，考察了As₂S₈条波导的光阻断效应，实现了光-光效应的开关功能. 关键词： 光波导技术 2S₈条形波导')" href="#">As₂S₈条形波导 光阻断效应 光激励法     

Studies on electrodeposited As2S3 thin films by double exposure holographic interferometry technique

Arsenic trisulphide (As₂S₃) thin films have been deposited onto stainless steel and fluorine doped tin oxide (FTO) coated glass substrates by electrodeposition technique using arsenic trioxide (As₂O₃) and sodium thiosulphate (Na₂S₂O₃) as precursors and ethylene diamine tetracetic acid (EDTA) as a complexing agent. Double exposure holographic interferometry (DEHI) technique was used to determine the thickness and stress of As₂S₃ thin films. It was observed that the thickness of the thin film increases whereas film stress to the substrate decreases with an increase in the deposition time. X-ray diffraction and water contact angle measurements showed polycrystalline and hydrophilic surface respectively. The bandgap energy increases from 1.82 to 2.45 eV with decrease in the film thickness from 2.2148 to 0.9492 μm.     

Raman spectra and structure of As40−xS60Ix glasses

The Raman spectra of bulk As_40?xS₆₀I_x glasses with 0?x?20 have been studied. The obtained spectra can be successfully explained assuming the structure of these glasses to be composed of As₂S_3.45 polymer network matrix with dissolved AsBr₃ and S₈ molecules.     

Giant photoinduced optical bleaching at room and liquid helium temperatures in Sb/As2S3 multilayered films

We report the observation of giant photo induced optical bleaching in Sb/As₂S₃ multilayered film at room and liquid He temperatures, when irradiated with 532 nm laser at moderate intensities. The experimental results show a dramatic increase in transmittance near the band gap regime at both the temperatures; however the rates at which transmission change occurs are rather slow at low temperature. The huge change in transmission is due to the photo induced intermixing of As₂S₃ layer with Sb. Our XPS measurements show that photo induced intermixing occurs through the wrong homopolar bonds, which under actinic light illumination are converted into energetically favored hetropolar bonds.     

Observations of photovoltage in Ag photodoping of amorphous As2S3 films

Photovoltage has been measured during Ag photodoping process in amorphous As₂S₃ films. Concerning the driving force on Ag atoms in the process, a tentative energy band model near Ag-As₂S₃ interface has been proposed.     

Hole mobility in evaporated layers of As2S3.CdI2

The hole drift mobility in As₂S₃.CdI₂ has been determined using Spear's method. The room-temperature value is 10^?4$\text{cm}{}^2\text{Vs}$, the activation energy 0.2 eV. The hole yield appears to be controlled by geminate recombination.     

Band to band radiative recombination in amorphous As2S3

Radiative recombination from band states is observed in amorphous As₂S₃. The spectral dependence of the radiation shows that recombination occurs before thermalization takes place.