Ferromagnetic resonance in epitaxial (Bi,Lu)3(Fe,Ga)5O12(210) films

Ferromagnetic resonance in epitaxial (Bi,Lu)₃(Fe,Ga)₅O₁₂ films grown on Gd₃Ga₅O₁₂(210) substrates is investigated. The spectrum contains a number of peaks, the most intense of which is related to the bulk of the film and the transition layer at the film-substrate interface. Most of the film volume is characterized by reduced magnetic anisotropy. The azimuthal and polar dependences of the resonance field exhibit 180° symmetry.     

液相外延(BiTm)3(FeGa)5O12石榴石单晶薄膜的X射线双晶衍射仪研究

本文用X射线双晶衍射仪和光学偏光显微镜对不同液相外延温度生长的(BiTm)₃(FeGa)₅O₁₂石榴石单晶薄膜进行了研究。发现随着生长温度的下降,薄膜的点阵常数增加,比法拉第旋转角θ_F增大。同时发现液相外延单晶石榴石薄膜是由点阵常数或取向略有差别的两层组成。当薄膜的晶格失配大于10^-3时薄膜将破裂。 关键词：     

In-situ strain effect on extrinsic transport of polycrystalline La0.7(Ca,Sr)0.3MnO3 films

The spin-polarised transport in ferromagnetic polycrystalline La_0.7(Sr,Ca)_0.3MnO₃ films on piezoelectric substrate has been investigated. The systematic study involved in finding the effect of in-situ strain on extrinsic electrical transport of various thick polycrystalline La_0.7(Sr,Ca)_0.3MnO₃ thin films. The in-situ strain in the manganite polycrystalline thin film is achieved by applying an electric field to the piezoelectric substrate 0.72 Pb(Mg_1/3Nb_2/3)O₃-0.28 PbTiO₃ (PMN-PT). A reversible strain of about 0.11% is acquired with an application of 10 kV/cm to the piezoelectric substrate. A typical drop in resistance at low magnetic fields has been found in all the polycrystalline manganite films. The effect of reversible strain versus the resultant strain gauges was discussed in all the polycrystalline films. At low temperatures, the effect of strain on low-field magnetoresistance and high-field magnetoresistance was found to be negligible. Further, the results are compared with the transport in manganite films deposited on step edge junctions.     

Coercivity mechanism of Sm(Co, Cu)5

The mechanism of the high intrinsic coercivity of the Sm(Co_1−xCu_x)₅ (0≦x<1) system was studied by relating the coherency between the lattice constants of hexagonal Sm(Co, Cu)₅ and hcp Co to the coercive force. It was found analytically that the intrinsic coercive force reaches a maximum in the composition range from x=0.6 to 0.8, where the lattice mismatch approaches zero, so that there is a strong correlation between lattice matching and coercive force. When a Sm ion was located within a Sm(Co, Cu)₅ grain and in the outmost edge of the a and c planes of its grain surrounded or not surrounded by the coherent Co phase, the crystal field parameter at each Sm³⁺ site was calculated using a point charge model under the assumption that the Co and Cu atoms located in a grain and the hcp Co atoms situated at the interface uniformly have a charge of 3/5−. The results indicated that the Co phase precipitated coherently along the grain boundaries effectively enhances the magnetocrystalline anisotropy of Sm ions located in the outmost edges of the a and c planes of a Sm(Co, Cu)₅ grain.     

Epitaxial strain-induced magnetic anisotropy in Sm3Fe5O12 thin films grown by pulsed laser deposition

Sm₃Fe₅O₁₂ thin films of various thicknesses were grown on a (0 0 1)-oriented Gd₃Ga₅O₁₂ substrate by pulsed laser deposition. The crystal structure of the films was strongly dependent on film thickness. The lattice was strained for thinner films due to a lattice mismatch between the film and substrate. This lattice strain was relaxed when the film thickness exceeded a critical thickness of around 660 Å. It is suggested that the epitaxial strain induces uniaxial magnetic anisotropy with an out-of-plane magnetic easy axis.     

Exchange coupled magnetic nanocomposites of Sm(Co1−xFex)5 / Fe3O4 with core/shell structure

Magnetic nanocomposites of Sm(Co_1−xFe_x)₅/Fe₃O₄ (x≈0.1) with the core/shell type structure were successfully fabricated using a two-step polyol process, where as-prepared SmCo_5(1−x) nanoparticles were used as seeds for the ferrite coating. The core/shell composites are quite stable in air and show a typical hysteric behavior of single component, yielding an enhanced coercivity of 2.2 kOe with a saturated magnetization of 130 emu/g at 5 T. The magnetization data clearly reveal the presence of effective exchange coupling between the hard-magnetic Sm(Co_1−xFe_x)₅ core and soft-magnetic Fe₃O₄ shell, suggestive of a single-phase structure rather than a distinctive two-phase one.     

Esca studies of Ga,As, GaAs,Ga2O3, As2O3 and As2O5

The binding energies of Ga 3d, As 3d, Ga L₃M₄,₅M₄,₅ and O 1s in Ga, As, GaAs, Ga₂O₃, As₂O₃ and As₂O₅ are reevaluated by means of ESCA. The calibration lines of the C 1s and the Au 4f_{$\text{7}\text{2}$} gave different binding energies for the compound materials. In order to determine the absolute binding energies, the chemical shifts in Auger and photoelectron lines from a layered structure composed of thin layer oxide and substrate of a defined material were used. An energy calibration curve, E(Ga 3d) vs. ΔE(GA LMM - Ga 3d), was found to be useful for determination of binding energies in the material which contains gallium. In the case of the GaAs sample, both the chemical etching and the ion bombardment effects on the chemical structure of the GaAs surface are also discussed.     

Cathodoluminescence characteristics of particles and film of (Y, Zn)2O3:Eu phosphor prepared by spray pyrolysis

Eu-doped Y₂O₃ particles with spherical shape and fine size were prepared by spray pyrolysis. The cathodoluminescence of Y₂O₃:Eu³⁺ powder was optimized by substituting small amount of zinc atoms in place of yttrium sites. As a result, the optimized (Y, Zn)₂O₃:Eu³⁺ phosphor showed 60% improved cathodoluminescence compared with Y₂O₃:Eu³⁺ particles. The prepared (Y, Zn)₂O₃:Eu³⁺ phosphor had spherical shape and 0.726 μm in mean size. Using these particles, the thickness of the phosphor film was controlled by varying the phosphor loading. The brightness and luminous efficiency of phosphor films prepared were monitored with varying the accelerating voltage ranges from 4 to 14 kV. The dependency of the luminous efficiency on the accelerating voltage was very sensitive to the phosphor loading. As increasing the accelerating voltage from 4 to 14 kV, the brightness of phosphor films prepared was monotonically increased from 200 to 1085 cd/cm²_, but the saturation in the luminous efficiency appeared at 10 kV. The highest efficiency was achieved when the number of phosphor-particles layer was about 3. More details about the luminous efficiency and brightness were discussed with changing the phosphor loading.     

Effect of oxygen pressure on microstructure and magnetic properties of strontium hexaferrite (SrFe12O19) film prepared by pulsed laser deposition

The effects of oxygen pressure during deposition on microstructure and magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films grown on Si (100) substrate with Pt (111) underlayer by pulsed laser deposition have been investigated. X-ray diffraction pattern confirms that the films have c-axis perpendicular orientation. The c-axis dispersion (Δθ₅₀) increases and c-axis lattice parameter decreases with increasing oxygen pressure. The films have hexagonal shape grains with diameter of 150-250 nm as determined by atomic force microscopy. The coercivities in perpendicular direction are higher than those in in-plane direction, which shows the films have perpendicular magnetic anisotropy. The saturation magnetization and anisotropy field for the film deposited in oxygen pressure of 0.13 mbar are comparable to those of the bulk strontium hexaferrite. Higher oxygen pressure leads to the films having higher coercivity and squareness. The coercivity in perpendicular and in-plane directions of the film deposited in oxygen pressure of 0.13 mbar are 2520 Oe and 870 Oe, respectively.     

Pressure dependence of dielectric constant,elastic constants,and lattice parameters of the Y3(Ga,Al)5O12 host

Atomistic simulations were performed to investigate the lattice parameters, dielectric constant, and elastic constants of Y₃(Ga_xAl_5−x)O₁₂ (x = 1, 2, 3, 4, 5) structures. The calculated lattice parameters and elastic constants are in good agreement with those in available experimental results. The pressure dependence of all studied quantities was investigated. In general, a change in the behavior of all studied quantities is found when the Ga concentration becomes more than that of the aluminum (Al) in Y₃(Ga_xAl_5−x)O₁₂ (x = 1, 2, 3, 4, 5) structures.     

Temperature-dependent photoluminescence properties of (Y, Lu)3Al5O12:Ce phosphors for white LEDs applications

The effects of the excitation wavelength, Ce³⁺ concentration and chemical substitution on the thermal quenching of Y₃Al₅O₁₂:Ce³⁺ (YAG:Ce³⁺) phosphors were investigated over a temperature range from 30 to 250 °C. The quenching behavior exhibits a complex dependence on the excitation wavelength and Ce³⁺ concentration, which can be attributed to temperature-dependent absorption strength of the different f-d absorption bands and thermally activated concentration quenching with or without energy migrations between Ce³⁺ ions, respectively. With increasing Lu³⁺content the luminescence of (Y, Lu)₃Al₅O₁₂:Ce³⁺ phosphors shows a pronounced blueshift, and simultaneously the temperature quenching is obviously improved due to a decrease in Stokes shift.     

Reduced dielectric loss and leakage current in CaCu3Ti4O12/SiO2/CaCu3Ti4O12 multilayered films

The CaCu₃Ti₄O₁₂/SiO₂/CaCu₃Ti₄O₁₂ (CCTO/SiO₂/CCTO) multilayered films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition method. It has been demonstrated that the dielectric loss and the leakage current density were significantly reduced with the increase of the SiO₂ layer thickness, accompanied with a decrease of the dielectric constant. The CCTO film with a 20 nm SiO₂ layer showed a dielectric loss of 0.065 at 100 kHz and the leakage current density of 6×10⁻⁷ A/cm² at 100 kV/cm, which were much lower than those of the single layer CCTO films. The improvement of the electric properties is ascribed to two reasons: one is the improved crystallinity; the other is the reduced free carriers in the multilayered films.     

Microstructures and coercivities of SmCox and Sm(Co,Cu)5 films prepared by magnetron sputtering

We have investigated the influence of composition and annealing conditions on the magnetic properties and microstructural features of SmCo_x films that were prepared by sputtering and subsequent annealing. A huge in-plane coercivity of 5.6 T was obtained from an optimally annealed Sm–Co film, which was attributed to the nanometer sized polycrystalline microstructure of the highly anisotropic SmCo₅ phase. Although a high density of planar defects were observed in the films that were annealed at high temperatures, they did not act as strong pinning sites for domain wall motion. The effect of Cu on [SmCo_4.5(9 nm)/Cu(xnm)]₁₀ multilayer thin films was also studied. An appropriate Cu content increased the coercivity.     

Microstructure and electrical properties of Ba0.5Sr0.5TiO3 thin films prepared on copper foils with La2O3 buffer layers

Ba_0.5Sr_0.5TiO₃ (BST) thin films were deposited on copper foils via sol-gel method with La₂O₃ as a buffer layer. The films were processed in almost inert atmosphere so that the substrate oxidation was avoided while allowing the perovskite film phase to crystallize. The existence of a La₂O₃ buffer layer between the BST thin film and Cu foil improved the dielectric constant and reduced the leakage current density of the BST thin film. Meanwhile, the BST thin film exhibited ferroelectric character at room temperature, which was contrast to the para-electric behavior of the film without the buffer layer. Effects of La₂O₃ buffer layer on the crystallizability and microstructure of BST thin films were also investigated.     

Domain dynamics in (210)-oriented single-crystal (Bi,Y,Lu,Pr)<Subscript>3</Subscript>(Fe,Ga)<Subscript>5</Subscript>O<Subscript>12</Subscript> films

Using high-speed photography, dynamic magnetic structures are studied in Bi-containing (210)-oriented single-crystal films of (Bi,Y,Lu,Pr)₃(Fe,Ga)₅O₁₂ grown through liquid-phase epitaxy from an overcooled solution in the melt on (Gd,Ga)₃(Mg,Zr,Ga)₅O₁₂ substrates. At various temperatures, the ranges of pulsed magnetic fields are determined in which unidirectional anisotropy of domain wall velocity and spatial distortions of moving domain walls are observed.     

Phase formation and characterization of Sr3Y2Ge3O12, Sr3In2Ge3O12, and Ca3Ga2Ge3O12 doped by trivalent europium

This work reports on the phase formation during a solid-state reaction of Eu³⁺-doped garnets with the general formula A₃B₂Ge₃O₁₂ (A=Ca, Sr and B=Ga, In, Y) and their luminescent properties. It is shown by XRD and DTA/TG experiments that the garnet-phase formation is completed at 1100-1200 °C. Moreover, it turned out that the position of the oxygen to europium charge-transfer band and the intensity of the forbidden 4f-4f transitions of Eu³⁺ is dependent on the covalent interaction between the Eu³⁺ activator and the surrounding oxygen anions. The investigated red-emitting luminescent materials show high lumen equivalents and deep red emission at the same time, which makes them attractive for the application in LEDs (light emitting diodes), in particular for near UV-emitting LEDs.     

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

In this paper ZnO films are grown on GaAs/Al₂O₃ substrates at different temperature by metal-organic chemical vapor deposition (MOCVD). The GaAs/Al₂O₃ substrates are formed by depositing GaAs layer (∼35 nm) on the Al₂O₃ substrate. The results of X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) demonstrate that most of the Ga and As atoms form Ga-As bond and the GaAs layer does not present any orientation. The characters of the ZnO films grown on GaAs/Al₂O₃ substrates are investigated by XRD, photoluminescence (PL), atomic force microscopy (AFM) and Raman scattering. Compared with ZnO film grown on Al₂O₃ substrate, ZnO film prepared by our fabrication scheme has good crystal and optical quality. Meanwhile its grain size becomes bigger according to the AFM image. Raman analysis indicates that the intrinsic defects and the in-plane tensile stress are obviously reduced in ZnO/GaAs/Al₂O₃ samples.     

Growth and characterization of Y2O3 thin films

Y₂O₃ thin films were grown on silicon (1 0 0) substrates by pulsed-laser deposition at different substrate temperatures and O₂ pressures. The structure and composition of films are studied by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The Y₂O₃ thin films deposited in vacuum strongly oriented their [1 1 1] axis of the cubic structure and the film quality depended on the substrate temperature. The magnitude of O₂ pressure obviously influences the film structure and quality. Due to the silicon diffusion and interface reaction during the deposition, yttrium silicate and SiO₂ were formed. The strong relationship between composition and growth condition was discussed.     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

The structural properties of a-Al₂O₃/Ge, a-Al₂O₃/In_0.5Ga_0.5As and a-Al₂O₃/In_0.5Al_0.5As/InGaAs interfaces were investigated by density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-Al₂O₃ samples were generated using a hybrid classical-DFT MD “melt and quench” approach. The interfaces were formed by annealing at 700 K/800 K and 1100 K with subsequent cooling and relaxation. The a-Al₂O₃/Ge interface demonstrates pronounced interface intermixing and interface bonding exclusively through Al–O–Ge bonds generating high interface polarity. In contrast, the a-Al₂O₃/InGaAs interface has no intermixing, Al–As and O–In/Ga bonding, low interface polarity due to nearly compensating interface dipoles, and low substrate deformation. The a-Al₂O₃/InAlAs interface demonstrated mild intermixing with some substrate Al atoms being adsorbed into the oxide, mixed Al–As/O and O–Al/In bonding, medium interface polarity, and medium substrate deformation. The simulated results demonstrate strong correlation to experimental measurements and illustrate the role of weak bonding in generating an unpinned interface for metal oxide/semiconductor interfaces.