Quantum transport in GaInAs-AlInAs heterojunctions,and the influence of intersubband scattering

Shubnikov-de Haas and cyclotron resonance results are presented for GaInAs-AlInAs heterojunctions in both perpendicular and tilted magnetic fields. Two electric subbands are occupied in zero magnetic field. Magnetic depopulation of the higher (E₁) subband is observed in both perpendicular and tilted orientations. This enables a demonstration of the importance of intersubband scattering in both resistivity and cyclotron resonance. A shift of the relative positions of the E_o and E₁ subbands by parallel magnetic fields is measured to be 0.26 meV/T².     

Observation of a node in the quantum oscillations induced by microwave radiation

The microwave induced magnetoresistance in a GaAs/AlGaAs heterostructure was studied at temperatures below 1 K and frequencies in the range of 150-400 GHz. A distinct node in the Shubnikov-de Haas oscillations, induced by the microwave radiation, is clearly observed. The node position coincides with the position of the cyclotron resonance on the carriers with effective mass (0.068±0.005)m₀.     

Electronic parameters and electronic structures in modulation-doped highly strained InxGa1−xAs/InyAl1−yAs coupled double quantum wells

Electronic parameters of a two-dimensional electron gas (2DEG) in modulation-doped highly strained In_xGa_1−xAs/In_yAl_1−yAs coupled double quantum wells were investigated by performing Shubnikov-de Haas (S-dH), Van der Pauw Hall-effect, and cyclotron resonance measurements. The S-dH measurements and the fast Fourier transformation results for the S-dH at 1.5 K indicated the electron occupation of two subbands in the quantum well. The electron effective masses of the 2DEG were determined from the cyclotron resonance measurements, and satisfied qualitatively the nonparabolicity effects in the quantum wells. The electronic subband structures were calculated by using a self-consistent method.     

Shubnikov-de Haas effect of n-inversion layers in InSb grain boundaries

Hall effect and Shubnikov-de Haas effect have been investigated in a n-inversion layer adjacent to the grain boundary in p-InSb bicrystals. The observed quantum oscillations of the magnetoconductivity result from a superposition of the Shubnikov-de Haas effect in two occupied subbands. The electron densities of the subbands n_si(n_s1=3.5 × 10¹¹cm^-2;n_s0= 1.1 × 10¹²cm^-2) and the effective cyclotron mass of the lower subband m_c0=(0.023 ± 0.002)m₀ have been evaluated.     

Spin splitting in HgTe/CdHgTe (013) quantum well heterostructures

The electron transport and cyclotron resonance in a one-sided selectively doped HgTe/CdHgTe (013) heterostructure with a 15-nm quantum well with an inverted band structure have been investigated. The modulation of the Shubnikov-de Haas oscillations has been observed, and the spin splitting in zero magnetic field has been found to be about 30 meV. A large Δm _c/m _c ≃ 0.12 splitting of the cyclotron resonance line has been discovered and shown to be due to both the spin splitting and the strong nonparabolicity of the dispersion relation in the conduction band.     

The effect of Zeeman splitting on Shubnikov-de Haas oscillations in two-dimensional systems

A theory of the Shubnikov-de Haas effect is developed for two-dimensional systems in a tilted magnetic field. The conductivity tensor is calculated for an arbitrary ratio r of the Zeeman splitting to the cyclotron splitting. Possible anisotropy of the g factor is taken into account. It is shown that at integer values of r, the main harmonic dominates in the spectrum of Shubnikov-de Haas oscillations and the phase of the oscillations depends on the parity of r. At half-integer values of r, the conductivity oscillations are determined by the harmonics of the second order of smallness.     

Shubnikov-de Haas oscillations in NbSe3

We have measured the resistivity of the linear transition metal trichalco-genide NbSe₃ in magnetic fields up to 180 kG. We observe large Shubnikov-de Haas oscillations. The measurements reveal a strong anisotropy in the a.c. plane perpendicular to the chain direction. A ratio of 3 in the cyclotron effective masses for the two orthogonal directions in this plane is determined. Spin splitting occurs for high magnetic field, and we obtain a Landé factor g of 2.45.     

Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100)

In electron inversion layers on Si (100) MOS capacitors uniaxial stress can cause simultaneous occupation of the two non-equivalent subbands E₀ and E₀'. Two distinct cyclotron resonance signals are observed and can be used to determine the effective masses and the relative occupation in the two subbands and their dependence on stress and electron density.     

Surface quantum oscillations in n-type (100) silicon inversion layers on sapphire

Measurements of Shubnikov-de Haas oscillations in (100) Si/($\text{1}$012)Al₂O₃ MOSFET's were performed in magnetic fields up to 10 Tesla for different tilt angles between the magnetic field direction and the surface normal. The experimental results show that the lowest electric subband in this system is twofold degenerate and is formed by the “heavy” cyclotron mass valleys. This can be explained by a large lateral stress present in the SOS (silicon on sapphire) system.     

Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations

Shubnikov-de Haas frequencies were measured in highly degenerate n-type Bi₂Se₃ having a higher carrier density (～9 × 10²⁵m^-3) than previously reported. The Fermi surface was found to be elongated along the trigonal axis, fitting a spheroidal model with an axial ratio of 5.0 for angles up to θ = 45°. Comparison of the number of carriers obtained from Hall measurements with that obtained from the Shubnikov-de Haas measurement supports the contention that the lowest conduction band minimum is a single surface located in the center of the Brillouin zone. The higher effective mass (0.25 m₀) found for these carrier concentrations indicates that the band is non-parabolic.     

Electronic anomalous mass near the resonant acceptor level E2 from Shubnikov-de Haas measurement in Hg0.82Cd0.18Te

Shubnikov-de Haas measurements on Hg_0.82Cd_0.18Te samples at 1.8 and 4.2 K temperature are reported. The obtained effective mass is compared with the one calculated from the non-parabolic model. The discrepancy between the two values is attributed to the presence of the E₂ resonant acceptor level. The density of states induced by this virtual level in the conduction band, is strongly dependent on stoichiometry and can be adjusted by thermal annealing.     

Shubnikov-de haas effect in n-CdSnAs2

Shubnikov-de Haas oscillations in the transverse magnetoresistance of single-crystalline n-type CdSnAs₂ have been recorded at temperatures between 2 and 25 K in magnetic fields up to 5T. The electron concentration of the samples ranged from 2 × 10¹⁷ to 2 × 10¹⁸ cm^?3. The angular dependences of the oscillation periods and cyclotron effective masses showed that the conduction band exhibits an energy dependent anisotropy, obeying the Kildal band structure model. For the low-temperature values of the band parameters we found: a band gap E_g = 0.30 eV, a spin-orbit splitting Δ = 0.50 eV, a crystal field splitting parameter δ = ?0.09 eV, and an interband matrix element P = 8.5 × 10^?8eV cm. This simple four-level model was found to be not adequate to describe quantitatively the observed electronic effective g-factor for a sample with low electron concentration.     

Surface quantum oscillations in (110) and (111) n-type silicon inversion layers

Shubnikov-de Haas oscillations have been studied for (110) and (111) n-type silicon inversion layers. The measured cyclotron masses m_c = (0.38 ± 0.03)m₀ and m_c = (0.40 ± 0.03)m₀ for (110) and (111) planes, respectively, are larger than theoretically predicted values. The experimental valley degeneracy factor g_v = 2 ± 0.2 for both orientations is also at variance with self consistent calculations. The electronic g-factor depends on the surface carrier concentration and is enhanced over its bulk value. There was no evidence for the occupation of other subbands.     

Effect of the spin-orbit interaction on the cyclotron resonance of two-dimensional electrons

In the cyclotron resonance (CR) spectra of two-dimensional (2D) electrons in InAs quantum wells, the CR line splitting is observed. The splitting is found to be an oscillating function of magnetic field. The oscillations do not correlate with the filling factor. The experimental results are interpreted in terms of the spin-orbit splitting in the presence of a built-in electric field appearing due to the asymmetry of the quantum-well potential. From the splitting of the CR line, the spin-orbit coupling constant α_so is determined. The resulting value agrees well with the value obtained for the same sample from the Shubnikov-de Haas oscillations. The role of the resonance interaction of charge carriers in the well with the interface donor states is discussed.     

Quantum Hall effect in a quasi-three-dimensional HgTe film

Magnetotransport of a quasi-three-dimensional (100-nm) HgTe film in quantized magnetic fields has been experimentally investigated. It has been found that the film exhibits pronounced quantization of the Hall resistance accompanied by deep minima of the dissipative resistance. A transition from the three-dimensional behavior of Shubnikov-de Haas oscillations in semiclassical magnetic fields (ω_cτ _q ≤ 1) to a two-dimensional one in the quantum-Hall-effect regime has been discovered. The conduction electron cyclotron effective mass in mercury telluride has been determined from the temperature dependence of the Shubnikov-de Hass oscillations in such magnetic fields.     

Hall effect plateaus and giant Shubnikov-de Haas oscillations in (BiSb)Telayered single crystals near the quantum limit

On bulk layered single crystals (Bi_0.25Sb_0.75)₂Te₃ with a hole concentration cm^-3 and a mobility cm²/Vs magnetoresistance and Hall effect investigations were performed in the temperature range T = 1.4 K ... 20 K in magnetic fields up to 18 T. For the magnetic field perpendicular to the layered structure giant Shubnikov-de Haas oscillations are measured; the positions of the maxima are triplets in the reciprocally scaled magnetic field. From the damping of the amplitudes with increasing temperature the cyclotron mass m _c = 0.12m ₀ is evaluated. Correlated with the SdH oscillations doublets of Hall effect plateaus (or kinks in low fields) are found. The weak well known Shubnikov-de Haas oscillations from the generally accepted multivallied highest valence band can be detected as a modulation on the giant oscillation. The high anisotropy of the SdH oscillations and their triplet structure in connection with the layered crystal structure lead us to suggest that the effects are caused by hole carrier pairing (mediated by the bipolaron mechanism) in quasi 2D sheets parallel to the crystal layer stacks. The measured Hall plateau resistances coincide with the quantum Hall effect values considering the number of layer stacks and the valley degeneracy of the 3D hole carrier reservoir. The ratio of spin splitting to Landau (cyclotron) splitting is observed to be . Received: 12 September 1997 / Revised: 8 January 1998 / Accepted: 22 January 1998     

Coexistence of collective and single-particle effects in the photoresponse of a 2D electron gas to microwave radiation

The photoresponse of magnetoresistance of a high-density two-dimensional electron system to microwave electromagnetic radiation is studied. The damping of the Shubnikov-de Haas oscillation by radiation with a non-monotonic dependence of this effect on the magnetic field and the radiation-induced oscillations of magnetoresistance are observed. The damping is most pronounced within isolated narrow magnetic field intervals that closely correspond to the expected positions of magnetoplasma resonances in the sample under study and also near the cyclotron resonance position. A “window” is observed in the photoresponse near the field value predicted on the basis of a single-particle electron spectrum consisting of broadened Landau levels. The radiation-induced oscillations, the window in the photoresponse, and the damping of the Shubnikov-de Haas oscillations near the cyclotron resonance are described in terms of the theory based on the concept of the nonequilibrium filling of single-electron states. Thus, it is demonstrated that the photoresponse pattern observed in the experiment is formed by both single-particle and collective (magnetoplasma) effects.     

Frequency dependent Shubnikov-De Haas oscillations in Si-MOS-FET under high magnetic fields

The quantum oscillations in the AC magnetoconductance was studied for inversion layers in Si-MOS-FETs under high magnetic fields at 1.5 K. Each peak in the Shubnikov-de Haas oscillation was found to be remarkably sharpened with increasing frequency up to 50 MHz. It was also found that the width of the gate voltage for non-conductive region (σ_xx=0) increases with increasing frequency.