Nonstoichiometry and critical temperature of MgB<Subscript>2</Subscript>

The influence of nonstoichiometry of the new high-temperature superconductor MgB₂ on its critical temperature was studied by the direct magnetooptical observations of the penetration and trapping of magnetic flux. To preclude the possible influence of accidental factors, a special sample with transition from pure boron to the MgB₂ with an excess of Mg was synthesized. In a narrow region near the unreacted boron, the magnetic-field trapping and screening disappear at a temperature 1.5 K higher than in the dominant stoichiometric region of the sample.     

Low-temperature anomalies in MgB<Subscript>2</Subscript> thermal expansion

The thermal expansion coefficient α(T) of MgB₂ was measured at low temperatures both in a zero magnetic field and at H=36 kOe. As in the oxide HTSCs, a region of anomalous (negative) thermal expansion and a strong effect of magnetic field on α(T) were revealed. The results obtained indicate the anomalous properties of MgB₂ and the oxide HTSCs to follow a common pattern.     

Physical property characterization of bulk MgB<Subscript>2</Subscript> superconductor

We report synthesis, structure/micro-structure, resistivity under magnetic field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity κ(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB₂, processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3–4 nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB₂. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm^-1. Superconductivity is observed at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power S(T), and thermal conductivity κ(T) measurements. The power law fitting of ρ(T) give rise to Debye temperature (Θ_D) at 1400 K which is found consistent with the theoretical fitting of S(T), exhibiting Θ _D of 1410 K and carrier density of 3.81 × 10²⁸/m³. Thermal conductivity κ(T) shows a jump at 38 K, i.e., at T_c, which was missing in some earlier reports. Critical current density (J_c) of up to 10⁵ A/cm² in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20 K respectively. The superconducting performance parameters viz. irreversibility field (H_irr) and critical current density J_c(H) of the studied MgB₂ are improved profoundly with addition of nano-SiC and nano-diamond. The physical property parameters measured for polycrystalline MgB₂ are compared with earlier reports and a consolidated insight of various physical properties is presented.     

Superconducting films with <Emphasis Type="Italic">T</Emphasis><Subscript>c</Subscript>=39 K prepared from stoichiometric MgB<Subscript>2</Subscript> targets

Oriented films of MgB₂ high-T_c superconductor are synthesized by pulsed laser sputtering of stoichiometric MgB₂ targets with subsequent annealing of the amorphous Mg-B material deposited onto MgO(111) substrates. The critical temperature of the films depends on the purity of the targets sputtered. The purification of boron powder in a vacuum makes it possible to minimize the content of impurities in the targets and to prepare MgB₂ films exhibiting a critical temperature above 39 K and a sharp inductive transition. A high room-temperature to residual resistivity ratio (more than 3) indicates the good quality of the films.     

Preparation of MgB<Subscript>2</Subscript>/Fe superconductor wire by electrical self-heating

MgB₂/Fe wires were prepared by electrical self-heating of in situ powder-in-tube wires for the first time at ambient conditions. Characterization of the wires processed at 750 °C, 800 °C and 850 °C for 15 min by XRD, SEM, ϱ–T, susceptibility and J_C measurements shows that the MgB₂ formed is of high quality particularly with respect to phase purity and transport J_C. The method considerably reduces the overall energy consumption vis-à-vis the production cost, simplifies the complexity of the fabrication procedure and is promising for manufacture of high-quality MgB₂ superconducting wires. PACS 74.70.Ad; 74.62.Bf; 74.25.Fy; 74.25.Ha; 81.20.Hy     

On electron transport in ZrB<Subscript>12</Subscript>, ZrB<Subscript>2</Subscript>, and MgB<Subscript>2</Subscript> in normal state

We report on measurements of the temperature dependence of resistivity, ρ(T), for single-crystal samples of ZrB₁₂, ZrB₂, and polycrystalline samples of MgB₂. It is shown that the cluster compound ZrB₁₂ behaves as a simple metal in the normal state, with a typical Bloch-Grüneisen ρ(T) dependence. However, the resistive Debye temperature, T_R=300 K, is three times smaller than T_D obtained from specific heat data. We observe the T² term in ρ(T) of all these borides, which could be interpreted as an indication of strong electron-electron interaction.     

Annealing study of electrodeposited CuInSe<Subscript>2</Subscript> and CuInS<Subscript>2</Subscript> thin films

In this study CuInSe₂ and CuInS₂ thin films were prepared onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis. The annealing effects on electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe₂/CuInS₂ showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. Mott–Schottky measurements were used to assess the conductivity type of the films and their carrier concentration. The prepared samples underwent an etching process to remove the binary accumulated Cu_2?x(Se,S) phases shown in FESEM pictures. This etching process has shown a noticeable decrease in both, the flat band potential, V_fb (V), and the number of acceptors, N_A (cm^?3) in selenized CuInSe₂ and sulfurized CuInS₂ samples.     

Soft X-ray resonant scattering study of single-crystal LaSr<Subscript>2</Subscript>Mn<Subscript>2</Subscript>O<Subscript>7</Subscript>

Soft X-ray resonant scattering studies at the Mn L_{II, III}- and the La M_{IV, V}- edges of single-crystal LaSr₂Mn₂O₇ are reported. At low temperatures, below T_N ≈ 160 K, energy scans with a fixed momentum transfer at the A-type antiferromagnetic (0 0 1) reflection around the Mn L_{II, III}-edges with incident linear σ and π polarizations show strong resonant enhancements. The splitting of the energy spectra around the Mn L_{II, III}-edges may indicate the presence of a mixed valence state, e.g., Mn³⁺/Mn⁴⁺. The relative intensities of the resonance and the clear shoulder-feature as well as the strong incident σ and π polarization dependences strongly indicate its complex electronic origin. Unexpected enhancement of the charge Bragg (0 0 2) reflection at the La M_{IV, V}-edges with σ polarization has been observed up to 300 K, with an anomaly appearing around the orbital-ordering transition temperature, T_OO ≈ 220 K, suggesting a strong coupling (competition) between them.     

Superconducting weak bonds at grain boundaries in MgB<Subscript>2</Subscript>

The possibility of preparing bicrystalline Josephson junctions and bolometers based on superconducting MgB₂ on specially prepared bicrystalline MgO substrates is investigated. Microbridges 0.85–6.00 μm in width, intersecting the bicrystalline interface, are formed in epitaxial bicrystalline MgB₂ films grown on these substrates. It is found that annealing of bicrystalline samples in oxygen leads to a systematic decrease in the critical current, an increase in the temperature width of the superconducting transition region, and to an improvement of the current-voltage (IV) characteristic, which becomes close in shape to the IV characteristic of a Josephson junction. The response of such a junction to radiation at a frequency of 110 GHz with an amplitude attaining 0.5 mV is measured.     

Electron transport properties of MgB<Subscript>2</Subscript> in the normal state

We report measurements of the resistivity, ρ, and the Seebeck coefficient, S , of a MgB₂ sintered sample, and compare S with theoretical calculations based on precise electronic structure calculations. ρ is fitted well by a generalized Bloch-Grüneisen equation with a Debye temperature Θ _R of 1050 K. S is given by the sum of a diffusive and a phonon drag term and the behavior in the temperature region T _c < T < 0.1Θ _R follows the relationship AT+BT³. The phonon drag term indicates a strong electron-phonon interaction. The diffusive term, compared with calculations, suggests that σ bands give the main contribution to the Seebeck effect. Received 16 November 2001 and Received in final form 21 December 2001     

Electron tunneling spectroscopy of the phonon spectrum of MgB<Subscript>2</Subscript>

The specific features of the phonon spectrum of the MgB₂ compound (T _c = 38 K) are investigated by tunneling spectroscopy. It is demonstrated that both the position and the energy width of the fundamental optical mode E _2g in the phonon spectrum are in good agreement with inelastic X-ray spectroscopy data but differ substantially from Raman spectroscopy results. Among possible factors responsible for this discrepancy, the anharmonic and nonadiabatic effects that are characteristic of the MgB₂ system are discussed.     

Anomalous low-temperature behavior of the thermal characteristics of MgB<Subscript>2</Subscript>

We have studied the behavior of the thermal expansion coefficient α(T) (in a zero magnetic field and at H≈4 T), the heat capacity C(T), and the thermal conductivity κ(T) of magnesium boride (MgB₂) in the vicinity of T_c and at lower temperatures. It was established that MgB₂, like oxide-based high-temperature superconductors, exhibits a negative thermal expansion coefficient at low temperatures. The anomaly of α(T) in MgB₂ is significantly affected by the magnetic field. It was established that, in addition to the well-known superconducting transition at T_c≈40 K, MgB₂ exhibits an anomalous behavior of both heat capacity and thermal conductivity in the region of T≈10–12 K. The anomalies of C(T) and κ(T) take place in the same temperature interval where the thermal expansion coefficient of MgB₂ becomes negative. The low-temperature anomalies are related to the presence of a second group of charge carriers in MgB₂ and to an increase in the density of the Bose condensate corresponding to these carriers at T_c2≈10–12 K.     

Theoretical analysis of tunneling experiments in the MgB<Subscript>2</Subscript> system

A detailed theoretical analysis of the experimental data obtained earlier in the studies of the tunneling spectra in the MgB₂ two-band superconducting system has been performed. It is shown that most these data are well described in the generalized two-band Bardeen-Cooper-Schrieffer theory with the constants of the intraband electron-phonon interaction that reasonably coincide with the ab initio calculation results. It is shown that the existence of specific collective excitation in this system induced by oscillations of the relative phase of two superconducting condensates (the Leggett mode) indicates the overestimation of the constants of the interband electron-phonon interaction in the ab initio calculations. The dependences of the superconducting gaps and the Leggett mode frequency on the temperature and the disorder degree in the Mg_{1 − x} Al _x B₂ system have been thoroughly studied.     

X-ray study of [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>ZnCl<Subscript>4</Subscript> at low temperatures

The unit cell parameters a, b, and c of [N(CH₃)₄]₂ZnCl₄ have been measured by x-ray diffraction in the temperature range 80–293 K. Temperature dependences of the thermal expansion coefficients α_a, α_b, and α_c along the principal crystallographic axes and of the unit cell thermal expansion coefficient α_V were determined. It is shown that the a=f(T), b=f(T), and c=f(T) curves exhibit anomalies in the form of jumps at phase transition temperatures T₁=161 K and T₂=181 K and that the phase transition occurring at T₃=276 K manifests itself in the a=f(T) and b=f(T) curves as a break. A slight anisotropy in the coefficient of thermal expansion of the crystal was revealed. The phase transitions occurring at T₁=161 K and T₂=181 K in [N(CH₃)₄]₂ZnCl₄ were established to be first-order.     

X-ray study of microcrystalline Hg<Subscript>2</Subscript><Emphasis Type="Italic">Hal</Emphasis><Subscript>2</Subscript> ferroelastics

The rhombic splitting of basal plane reflections and the thermal behavior of fundamental and diffuse reflections from X-points of the Brillouin zone characterizing the behavior of an order parameter and its fluctuations, respectively, were studied in polycrystalline Hg₂Cl₂ and Hg₂Br₂ samples. In the case of polycrystalline samples, a strong broadening of phase transition effects was observed, due to damaged surface layers and elastic and plastic stress fields inducing order parameter fluctuations over a wide temperature range.     

Impedance spectroscopy study of Na<Subscript>1/2</Subscript>Sm<Subscript>1/2</Subscript>TiO<Subscript>3</Subscript> ceramic

Complex impedance analysis of a valence-compensated perovskite ceramic oxide Na_1/2Sm_1/2TiO₃, prepared by a mixed oxide (solid-state reaction) method, has been carried out. The formation of single-phase material was confirmed by X-ray diffraction studies, and it was found to be an orthorhombic phase at room temperature. In a scanning electron microscope, grains separated by well-defined boundaries are visible, which is in good agreement with that of impedance analysis. Alternating current impedance measurements were made over a wide temperature range (31–400 °C) in an air atmosphere. Complex impedance and modulus plots helped to separate out the contributions of grain and grain boundaries to the overall polarization or electrical behavior. The physical structure of the samples was visualized most prominently at higher temperatures (275 °C) from the Nyquist plots showing inter- and intragranular impedance present in the material. The frequency dependence of electrical data is also analyzed in the framework of the conductivity and modulus formalisms. The bulk resistance, evaluated from the impedance spectrum, was observed to decrease with rise in temperature, showing a typical negative temperature coefficient of resistance-type behavior like that of semiconductors. The modulus mechanism indicates the non-Debye type of conductivity relaxation in the materials, which is supported by the impedance data. PACS 77.22.Ch; 77.22.Ej; 77.22.Gm; 77.22.Jp; 77.84.Bw     

Two regimes in the magnetic field response of superconducting MgB<Subscript>2</Subscript>

Using Scanning Tunneling Microscope at low temperature we explore the superconducting phase diagram in the π-band of the two-band superconductor MgB₂. In this band the peculiar shape of the local tunneling spectra and their dynamics in the magnetic field reveal the complex character of the quasiparticle density of states (DOS). The gap in the DOS is first rapidly filled with states in raising the magnetic field up to 0.5 T and then slowly approaches the normal state value: the gap is observed up to 2 T. Such a change in the DOS dynamics suggests the existence of two terms in the DOS of the π-band: a first one, reflecting an intrinsic superconductivity in the band and a second one, originating from an inter-band coupling to the σ-band. Our findings allow a deeper understanding of the unique phase diagram of MgB₂.     

Microemulsion-mediated in-situ synthesis and magnetic characterization of polyaniline/Zn<Subscript>0.5</Subscript>Cu<Subscript>0.5</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> nanocomposite

Polyaniline/Zn_0.5Cu_0.5Fe₂O₄ nanocomposite was synthesized by a simple, general and inexpensive in-situ polymerization method in w/o microemulsion. The effects of polyaniline coating on the magnetic properties of Zn_0.5Cu_0.5Fe₂O₄ nanoparticles were investigated. The structural, morphological and magnetic properties of as-prepared samples were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectra, scanning electron microscopy (SEM) and magnetic measurements. The morphology analysis confirmed that polyaniline was deposited on the porous surface of magnetic Zn_0.5Cu_0.5Fe₂O₄. It was shown that the saturation magnetization and coercivity of Zn_0.5Cu_0.5Fe₂O₄ decreased after polyaniline coating, which can be interpreted by the interparticle dipole–dipole interactions that contributed to magnetic anisotropy and changed the magnetic properties of the nanoparticles. PACS  74.25.Ha; 81.05.-t; 81.05.Lg     

Photoacoustic spectroscopy of thin films of As<Subscript>2</Subscript>S<Subscript>3</Subscript>, As<Subscript>2</Subscript>Se<Subscript>3</Subscript> and GeSe<Subscript>2</Subscript>

Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As₂S₃, As₂Se₃ and GeSe₂ exhibit a wide variety of photo-induced phenomena that enable them to be used as optical imaging or storage medium and various electronic devices, including electro-optic information storage devices and optical mass memories. Therefore, accurate measurement of thermal properties of semiconducting films is necessary to study the memory density. The thermal conductivity of thin films of As₂S₃ (thickness 100 μm and 80 μm), As₂Se₃ (thickness 100 μm and 80 μm) and GeSe₂ (thickness 120 μm and 100 μm) has been measured using PAS technique. Our result shows that the thermal conductivity of thicker films is larger than the thinner films. This can be explained by the thermal resistance effect between the film and the surface of the substrate.      

X-ray emission study of the electronic structure of nanocrystalline Al<Subscript>2</Subscript>O<Subscript>3</Subscript>

Valence states of metal ions and the phase composition of nanocrystalline Al₂O₃ (of the original oxide and the oxide irradiated by high-energy Fe⁺ ions) are studied by using x-ray emission Al L_{2, 3} and O Kα spectra. It is established that the shape of the Al L_{2, 3} spectra strongly changes as one goes from the original (bulk) Al₂O₃ to nanocrystalline oxide, while the O Kα spectra remain practically unchanged. Moreover, irradiation by high-energy Fe⁺ ions results in slight additional changes in the x-ray spectral characteristics of the aluminum oxides under study. The obtained experimental data are compared with the results of theoretical calculations of the electronic structure of α and γ phases of Al₂O₃ performed using the LDA formalism. Using the results of x-ray spectral studies, electronic structure calculations, and x-ray diffraction analysis, it is shown that the revealed spectral differences between the nanocrystalline state of aluminum oxide and the bulk material can be interpreted as a phase transition from the α phase to the γ phase of Al₂O₃ with an addition of bayerite.