The origin of noncollinear anisotropies and asymmetric magnetization reversal in FM/AFM bilayer system

The effects of the magnitude of the uniaxial anisotropy of a ferromagnet and the cooling field on the noncollinearity between uniaxial anisotropy and induced unidirectional anisotropy in a ferromagnet/antiferromagnet bilayer system are investigated. A diagram of noncollinear anisotropies and relative negative (positive) exchange bias field dependence upon cooling field and uniaxial anisotropy of the ferromagnet is obtained. The numerical result shows that the emergence of noncollinear anisotropies originates from the action of the cooling field and uniaxial anisotropy of the ferromagnet. The noncollinearity strongly depends on the magnitude of cooling field and uniaxial anisotropy of the ferromagnet. Moreover, the effect of noncollinear anisotropies and applied field on asymmetric magnetization reversal is also investigated. Amazingly, when the magnetic field is applied collinearly with unidirectional anisotropy, the hysteresis loop of ferromagnet/antiferromagnet bilayers is always symmetric even if there are noncollinear anisotropies. Our results indicate that the asymmetry of the hysteresis loop only originates from the noncollinearity between the induced unidirectional anisotropy and the applied field, rather than from the noncollinearity between the uniaxial and unidirectional anisotropies.     

Probing antiferromagnetic order with heat capacity in exchange-biased structures

We explore the magnetic heat capacity in exchange-biased ferromagnet/antiferromagnet bilayers theoretically. We show that changes in the antiferromagnetic structure due to the reversal of the ferromagnet layer can be detected by distinct features in the heat capacity. This offers a method for probing antiferromagnetic domains in exchange-biased systems.     

Asymmetric magnetization reversal behavior and noncollinear anisotropies in exchange-bias system

The effect of noncollinearity between unidirectional and uniaxial anisotropies on asymmetric magnetization reversal of ferromagnet/antiferromagnet (FM/AFM) bilayer has been investigated. The results show the emergence of noncollinear anisotropies comes from the competition among applied magnetic field, magnetic anisotropy and exchange coupling in FM/AFM interface. The noncollinearity can lead to the asymmetry of hysteresis loop of FM/AFM bilayer. However, when the magnetic field is applied along the uniaxial anisotropy axis of FM layer, the hysteresis loop of FM/AFM bilayer is always symmetry independence of the noncollinear angle. Our results indicate that the asymmetry not only originates from the noncollinearity but also depends on the applied magnetic field orientation. Moreover, the asymmetry of hysteresis loop is always along with the appearance of unequivalence for magnetization reversal of FM/AFM bilayer, and there is a periodicity of π with orientation of applied field for its periodicity independence of the angle of the noncollinearity between the uniaxial and unidirectional anisotropies. The results can help us to open additional avenues to tailor the future advance magnetic device.     

Symmetry driven irreversibilities at ferromagnetic-antiferromagnetic interfaces

The coupling between a ferromagnet and an antiferromagnet can establish a directional anisotropy called exchange bias. In many systems this exchange bias is reduced upon subsequent field cycling, which is referred to as training effects. Numerical simulations of a simple coherent rotation model suggest that the symmetry of the anisotropy in the antiferromagnet is crucial for the understanding of training effects in exchange bias systems. Namely, the existence of multiple antiferromagnetic easy anisotropy axes can initially stabilize a noncollinear arrangement of the antiferromagnetic spins, which relaxes into a collinear arrangement after the first magnetization reversal of the ferromagnet.     

交换偏置系统中的反铁磁磁化与自旋波

采用自由能变分法研究了铁磁/反铁磁双层膜系统在反铁磁层存在净磁化下的自旋波谱.本模型中铁磁薄层具有单轴磁晶各向异性和立方磁晶各向异性,反铁磁层仅具有单轴磁晶各向异性,但厚度有限,推导出了系统铁磁共振频率的表达式.结果表明：系统的自旋波谱分光学模和声学模两种,其中光学模仅在反铁磁层存在净磁化时得到激发.自旋波谱可按外磁场强度的变化情况分为强弱两支;区分强磁场和弱磁场的临界场依赖于铁磁/反铁磁间的交换作用,反铁磁层的磁化强度以及反铁磁层的厚度等.交换偏置场对光学模的影响明显于声学模,而反铁磁的净磁化和其厚度对系统的影响紧密联系,难以区分.但当反铁磁层净磁化很小可忽略时,系统只存在声学模激发. 关键词： 铁磁/反铁磁双层膜 反铁磁层净磁化 光学模 声学模     

交换偏置双层膜中的反铁磁自旋结构及其交换各向异性

研究了交换偏置双层膜中界面存在二次以及双二次交换耦合下反铁磁磁矩转动及其交换各向异性.结果表明，其反铁磁膜中的磁矩转动存在可逆“恢复行为”、不可逆“半转动行为”、不可逆“倒转行为”以及不可逆“半倒转行为”四种情形，四种情形的出现强烈地依赖于界面二次、双二次耦合以及反铁磁膜厚度.其中可逆恢复行为情况下，系统出现交换偏置，而不可逆的半转、半倒转以及倒转情形，系统不出现交换偏置.特别地,在界面处仅存在双二次耦合的情形下，其界面双二次耦合常数J₂≤0.1 σ关键词： 反铁磁自旋结构 交换各向异性 界面双二次耦合 交换偏置     

Computer simulation of magnetization flop in magnetic tunnel junctions exchange-biased by synthetic antiferromagnets

Computer simulation in a single domain multilayer model is used to investigate magnetization flop in magnetic tunnel junctions, exchange-biased by pinned synthetic antiferromagnets with the multilayer structure NiFe/AlO_x/Co/Ru/Co/FeMn. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy and hence increased coercivity of the Co layers in the synthetic antiferromagnet. However, when the synthetic antiferromagnet is not or weakly pinned, the magnetization directions of the two layers sandwiching AlO_x, which mainly determine the magnetoresistance, are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal MR change from the high MR state to zero, irrespective of the direction of the free layer switching. This emphasizes an importance of a strong pinning of the synthetic antiferromagnet at small cell dimensions. The threshold field for magnetization flop is found to increase linearly with increasing antiferromagnetic exchange coupling between the two Co layers in the synthetic antiferromagnet. The restoring force from magnetization flop to the normal synthetic antiferromagnetic structure is roughly proportional to the resistance to magnetization flop. Irrespective of the magnetic parameters and cell sizes, the state of magnetization flop does not exist near H_a=0, indicating that magnetization flop is driven by the Zeeman energy.     

Influence of an interface layer on the effective coupling at a ferromagnet/antiferromagnet interface

We examine the exchange anisotropy induced at a ferromagnetic/antiferromagnetic interface when an antiferromagnetic interface layer exists. We show that competition between exchange couplings in the interface layer can result in a ferrimagnetic-like compensation point. This leads to a reversal of the effective field acting on the ferromagnet, and a consequent sign change of the exchange bias for temperatures near the Néel temperature of the antiferromagnet. A surprising result is the sensitive dependence of the compensation point on exchange interactions. Even minute modifications of the exchange interactions near the interface can result in a reversal of the effective field, provided certain conditions are met.     

New Trends in Magnetic Exchange Bias

The study of layered magnetic structures is one of the hottest topics in magnetism due to the growing attraction of applications in magnetic sensors and magnetic storage media, such as random access memory. For almost half a century, new discoveries have driven researchers to re-investigate magnetism in thin film structures. Phenomena such as giant magnetoresistance, tunneling magnetoresistance, exchange bias and interlayer exchange coupling led to new ideas to construct devices, based not only on semiconductors but on a variety of magnetic materials Upon cooling fine cobalt particles in a magnetic field through the Néel temperature of their outer antiferromagnetic oxide layer, Meiklejohn and Bean discovered exchange bias in 1956. The exchange bias effect through which an antiferromagnetic AF layer can cause an adjacent ferromagnetic F layer to develop a preferred direction of magnetization, is widely used in magnetoelectronics technology to pin the magnetization of a device reference layer in a desired direction. However, the origin and effects due to exchange interaction across the interface between antiferromagneic and ferromagnetic layers are still debated after about fifty years of research, due to the extreme difficulty associated with the determination of the magnetic interfacial structure in F/AF bilayers. Indeed, in an AF/F bilayer system, the AF layer acts as “the invisible man” during conventional magnetic measurements and the presence of the exchange coupling is evidenced indirectly through the unusual behavior of the adjacent F layer. Basically, the coercive field of the F layer increases in contact with the AF and, in some cases, its hysteresis loop is shifted by an amount called exchange bias field. Thus, AF/F exchange coupling generates a new source of anisotropy in the F layer. This induced anisotropy strongly depends on basic features such as the magnetocrystalline anisotropy, crystallographic and spin structures, defects, domain patterns etc of the constituant layers. The spirit of this topical issue is, for the first time, to gather and survey recent and original developments, both experimental and theoretical, which bring new insights into the physics of exchange bias. It has been planned in relation with an international workshop exclusively devoted to exchange bias, namely IWEBMN’04 (International Workshop on Exchange Bias in Magnetic Nanostructures) that took place in Anglet, in the south west of France, from 16th to 18th September 2004. The conference gathered worldwide researchers in the area, both experimentalists and theoreticians. Several research paths are particularly active in the field of magnetic exchange coupling. The conference, as well as this topical issue, which was also open to contributions from scientists not participating in the conference, has been organized according to the following principles: 1. Epitaxial systems: Since the essential behavior of exchange bias critically depends on the atomic-level chemical and spin structure at the interface between the ferromagnetic and antiferromagnetic components, epitaxial AF/F systems in which the quality of the interface and the crystalline coherence are optimized and well known are ideal candidates for a better understanding of the underlying physics of exchange bias. The dependence of exchange bias on the spin configurations at the interfaces can be accomplished by selecting different crystallographic orientations. The role of interface roughness can also be understood from thin-film systems by changing the growth parameters, and correlations between the interface structure and exchange bias can be made, as reported in this issue. 2. Out-of-plane magnetized systems: While much important work has been devoted to the study of structures with in-plane magnetization, little has been done on the study of exchange bias and exchange coupling in samples with out-of-plane magnetization. Some systems can exhibit either in-plane or out-of-plane exchange bias, depending on the field cooling direction. This is of particular interest since it allows probing of the three-dimensional spin structure of the AF layer. The interface magnetic configuration is extremely important in the perpendicular geometry, as the short-range exchange coupling competes with a long-range dipolar interaction; the induced uniaxial anisotropy must overcome the demagnetization energy to establish perpendicular anisotropy films. Those new studies are of primary importance for the magnetic media industry as perpendicular recording exhibits potential for strongly increased storage densities. 3. Parameters tuning exchange bias in polycrystalline samples and magnetic configurations: Different parameters can be used to tune the exchange bias coupling in polycrystalline samples similar to those used in devices. Particularly fascinating aspects are the questions of the appearance of exchange bias or coercivity in ferromagnet/antiferromagnet heterostructures, and its relation to magnetic configurations formed on either side of the interface. Several papers report on either growth choices or post preparation treatments that enable tuning of the exchange bias in bilayers. The additional complexity and novel features of the exchange coupled interface make the problem particularly rich. 4. Dynamics and magnetization reversal: Linear response experiments, such as ferromagnetic resonance, have been used with great success to identify interface, surface anisotropies and interlayer exchange in multilayer systems. The exchange bias structure is particularly well suited to study because interface driven changes in the spin wave frequencies in the ferromagnet can be readily related to interlayer exchange and anisotropy parameters associated with the antiferromagnet. Because the exchange bias is intimately connected with details of the magnetization process during reversal and the subsequent formation of hysteresis, considerations of time dependence and irreversible processes are also relevant. Thermal processes like the training effect manifesting itself in changes in the hysteretic characteristics depending on magnetic history can lead to changes in the magnetic configurations. This section contains an increasing number of investigations of dynamics in exchange bias coupled bilayers, and in particular those of the intriguing asymmetric magnetization reversal in both branches of a hysteresis loop. The Editors of the topical issue: Alexandra Mougin Laboratoire de Physique des Solides, UMR CNRS 8502, Université Paris Sud, F-91405 Orsay, France Stéphane Mangin Laboratoire de Physique des Matériaux, UMR CNRS 7556, Université Henri Poincaré, F-54506 Nancy, France Jean-Francois Bobo Laboratoire de Physique de la Matière Condensée - NMH, FRE 2686 CNRS ONERA, 2 avenue Edouard Belin, F-31400 Toulouse, France Alois Loidl Experimentalphysik V, EKM, Institut für Physik, Universität Augsburg, Universitätsstrasse 1, D-86135, Augsburg, Germany     

Origin of the asymmetric magnetization reversal behavior in exchange-biased systems: competing anisotropies

The magnetization reversal in exchange-biased ferromagnetic-antiferromagnetic (FM-AFM) bilayers is investigated. Different reversal pathways on each branch of the hysteresis loop, i.e., asymmetry, are obtained both experimentally and theoretically when the magnetic field is applied at certain angles from the anisotropy direction. The range of angles and the magnitude of this asymmetry are determined by the ratio between the FM anisotropy and the interfacial FM-AFM exchange anisotropy. The occurrence of asymmetry is linked with the appearance of irreversibility, i.e., finite coercivity, as well as with the maximum of exchange bias, increasing for larger anisotropy ratios. Our results indicate that asymmetric hysteresis loops are intrinsic to exchange-biased systems and the competition between anisotropies determines the asymmetric behavior of the magnetization reversal.     

Modeling exchange bias microscopically

Exchange bias is a horizontal shift of the hysteresis loop observed for a ferromagnetic layer in contact with an antiferromagnetic layer. Since exchange bias is related to the spin structure of the antiferromagnet, for its fundamental understanding a detailed knowledge of the physics of the antiferromagnetic layer is inevitable. A model is investigated where domains are formed in the volume of the AFM stabilized by dilution. These domains become frozen during the initial cooling procedure carrying a remanent net magnetization which causes and controls exchange bias. Varying the anisotropy of the antiferromagnet, we find a non-trivial dependence of the exchange bias on the anisotropy of the antiferromagnet.     

The rotational anisotropies in the ferromagnetism/antiferromagnetism 1/ antiferromagnetism 2 exchange bias structures

The rotational anisotropies in the exchange bias structures of ferromagnetism/antiferromagnetism 1/antiferromagnetism 2 are studied in this paper. Based on the model, in which the antiferromagnetism is treated with an Ising mean field theory and the rotational anisotropy is assumed to be related to the field created by the moment induced on the antiferromagnetic layer next to the ferromagnetic layer, we can explain why in experiments for ferromagnetism (FM)/antiferromagntism 1 (AFM1)/antiferromagnetism 2 (AFM2) systems the thickness-dependent rotational anisotropy value is non-monotonic, i.e. it reaches a minimum for this system at a specific thickness of the first antiferromagnetic layer and exhibits oscillatory behaviour. In addition, we find that the temperature-dependent rotational anisotropy value is in good agreement with the experimental result.     

外应力场下铁磁/反铁磁双层膜系统中的交换偏置

采用自由能极小的方法研究了铁磁/反铁磁双层膜系统在外应力场下的交换各向异性.本模型中铁磁层具有单轴磁晶各向异性和立方磁晶各向异性，而反铁磁层仅具有单轴磁晶各向异性，但其厚度趋于半无穷.理论上解析地给出了系统的等效交换偏置和钉扎角(它显示了反铁磁层对铁磁层磁化的钉扎作用)与外应力场之间的关系.数值计算表明：系统的等效交换偏置与外磁场的方向有关，而与其大小无关；然而外应力场的大小和方向均对系统的等效交换偏置有影响，其根源在于外应力场的大小和方向都影响着钉扎角. 关键词： 铁磁/反铁磁双层膜 交换偏置 钉扎角 应力场     

铁磁/反铁磁双层膜系统中的磁畴动力学行为

比较了铁磁单层膜与铁磁/反铁磁双层膜结构中的磁畴演化行为, 发现由于反铁磁层膜对铁磁层膜的耦合作用使得系统的磁畴壁厚度、 磁畴壁等效质量、磁畴壁移动速度等发生了改变, 系统的矫顽场增强, 并出现了交换偏置场. 文章具体研究了反铁磁层耦合作用下其磁畴壁厚度、 等效质量以及磁畴壁移动速度等与反铁磁层的净磁化、 磁各向异性、界面耦合强度以及温度等的关系; 并研究了其对铁磁/反铁磁双层膜中的交换偏置场、矫顽场的影响. 进而 从磁畴结构的形成及其演化上揭示了铁磁/反铁磁双 层膜中出现交换偏置以及矫顽场增加的物理机制.     

Kinetics of magnetization reversal in a heterophase nanomagnet with spatially modulated anisotropy

Magnetization reversal modes in a thin-film NiFeCuMo ferromagnet (FM) with periodically varying in-plane anisotropy are studied by the magneto-optical indicator film (MOIF) technique. The uni-directional anisotropy in FM regions exchange-coupled to a FeMn antiferromagnet (AFM) film in the form of square mesh stripes is alternated by the uniaxial anisotropy in the FM regions inside this mesh. It is shown that the boundaries formed along the edges of these stripes, which separate FM regions with different anisotropy, crucially influence the kinetics of domain-structure transformation in both types of FM regions. It is established that the lateral exchange anisotropy in the ferromagnet, which is determined by the stabilization of the spin distribution in the FM layer along the FM-(FM/AFM) interface, leads to the asymmetry of the magnetization reversal in FM regions bordered with an FM/AFM structure. Anisotropy of the mobility of 180-degree “charged” and “uncharged” domain walls situated, respectively, perpendicular and parallel to the unidirectional anisotropy axis is revealed. The difference observed between the mobilities of charged and uncharged domain walls is attributed to the difference in the spin distribution in these walls with respect to the unidirectional anisotropy axis and is a key factor for the difference between the magnetization reversal kinetics in horizontal and vertical exchange-biased FM stripes. Drastic differences are revealed in the asymmetry of magnetization reversal processes in mutually perpendicular narrow stripes of FM/AFM structures. Possible mechanisms of magnetization reversal in low-dimensional FM-(FM/AFM) heterostructures are discussed with regard to the effect of domain walls localized on the edges of AFM layers.     

外应力场下铁磁/反铁磁双层膜系统中的自旋波

采用自由能极小的方法研究了铁磁/反铁磁双层膜系统在外应力场下的一致进动自旋波性质，即铁磁共振现象. 本模型中铁磁层很薄可看成单畴结构，但具有单轴磁晶各向异性和立方磁晶各向异性；而反铁磁层仅具有单轴磁晶各向异性，但其厚度趋于半无穷. 推导出了该系统的铁磁共振频率和频谱宽度的解析式. 结果表明，外应力场和界面交换耦合或反铁磁磁强度仅在弱磁场下对系统的铁磁共振有影响，且系统的铁磁共振行为按磁场强度可分为两支，其区分弱磁场和强磁场的临界场依赖于外应力场的方向. 另一方面，应力场方向的改变可借助于反铁磁层磁畴变化对铁磁层磁晶各向异性轴有影响. 关键词： 铁磁/反铁磁双层膜 界面耦合强度 铁磁共振 应力场     

Anomalous spontaneous reversal in magnetic heterostructures

We observe a thermally induced spontaneous magnetization reversal of epitaxial ferromagnet/antiferromagnet heterostructures under a constant applied magnetic field. Unlike any other magnetic system, the magnetization spontaneously reverses, aligning antiparallel to an applied field with decreasing temperature. We show that this unusual phenomenon is caused by the interfacial antiferromagnetic coupling overcoming the Zeeman energy of the ferromagnet. A significant temperature hysteresis exists, whose height and width can be tuned by the field applied during thermal cycling. The hysteresis originates from the intrinsic magnetic anisotropy in the system. The observation of this phenomenon leads to open questions in the general understanding of magnetic heterostructures. Moreover, this shows that in general heterogeneous nanostructured materials may exhibit unexpected phenomena absent in the bulk.     

铁磁和反铁磁双层膜中铁磁共振的研究

采用微磁学理论研究了铁磁/反铁磁双层膜中的铁磁共振现象.本模型将铁磁薄层抽象为一个单晶,具有立方磁晶各向异性和单轴磁晶各向异性,而反铁磁层视为厚度趋近于半无穷,且只有单轴磁晶各向异性.推导出了该系统的铁磁共振频率和频率谱宽度的解析式.数值计算表明,铁磁共振模式分两支,取决于立方磁晶各向异性.而界面的交换耦合,是磁易轴具有单向性的起因.     

铁磁/反铁磁双层膜系统中交换各向异性及其厚度依赖性

研究铁磁/反铁磁双层膜系统中交换偏置场和矫顽场的冷却磁场依赖性.结果表明,随着冷却磁场的增加,交换偏置场由负值向正值转变.在转变点附近,矫顽场有-个特别的增强,并达到最大值.结果同相关实验-致.研究铁磁层和反铁磁层厚度对交换偏置场和矫顽场的影响.发现,正负交换偏置场和矫顽场随着铁磁层厚度的增大而减小,但随反铁磁层厚度的变化关系复杂.在正交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场增强,矫顽场减弱;在负交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场减弱,矫顽场增强.     

Exchange bias in ferromagnet/antiferromagnet bilayers

Since the exchange bias （EB） effect was discovered in the Co/CoO core-shell nanoparticles, it has been extensively studied in various ferromagnet （FM）/antiferromagnet （AFM） bilayers due to its crucial role in spintronics devices. In this article, we review the investigation of the EB in our research group. First, we outline basic features of the EB, including the effects of the constituent layer thickness, the microstructure and magnetization of the FM layers, and we also discuss asymmetric magnetization reversal process in wedged-FM/AFM bilayers. Secondly, we discuss the mechanisms of the positive EB and the perpendicular EB. Thirdly, we demonstrate the hysteretic behavior of the angular dependence of the EB and analyze the EB training effect. Finally, we discuss the roles of the rotatable anisotropy in the two phenomena.