锂离子电池用“三明治”型Si/Fe/Si薄膜负极材料的制备及其性能

采用磁控溅射法在铜箔集流体上沉积得到了具有“三明治”结构的Si/Fe/Si薄膜. 高分辨率透射电镜(HRTEM)和选区电子衍射(SAED)分析表明, 该薄膜为非晶态. 扫描电镜(SEM)和能量散射X射线能谱(EDXS)结果表明, 该薄膜循环前总厚度为3.2 μm, 循环200 周后体积膨胀率为265%. 在1.5-0.005 V(vs Li+/Li)和0.1 mA·cm-2条件下, 该薄膜电极首次吸锂量为1.85 mAh·cm-2, 70周后放锂量达最大值0.84 mAh·cm-2, 200周后放锂量仍维持在0.55 mAh·cm-2, 为最高放锂量的66%. 惰性材料铁的加入一方面提高了薄膜的导电性和电极的面积比容量, 有效抑制了电压滞后效应; 另一方面有效抑制了活性物质硅的体积膨胀, 保持了薄膜较好的循环充、放电性能.     

TixV1-xO2薄膜的光学及相变特性

采用射频磁控溅射方法,在c-Al2O3(0001)基底上制备了不同钒钛比例的TixV1-xO2(0≤x≤1)薄膜,利用X射线衍射(XRD)、拉曼(Raman)光谱、紫外-可见-近红外(UV-Vis-NIR)光谱对薄膜结构及光学性能进行测试分析,计算薄膜的太阳能智能调节率和光学带隙.实验结果及分析表明:随着Ti含量的增加,薄膜的红外调节特性和热滞特性逐渐减弱直至消失;薄膜样品的光学带隙随着Ti含量的增加而变宽,光响应范围发生蓝移;其光学带隙随着V含量的增加而变窄,光响应范围发生红移.     

含氮磷酸锂薄膜在空气中的稳定性

利用射频(RF)磁控溅射方法制备了含氮磷酸锂(LiPON)薄膜. 采用SEM、XRD、XPS等技术以及交流阻抗法和电位线性扫描法, 研究了空气湿度对LiPON薄膜形貌、组成和性能的影响. 结果表明, LiPON薄膜在湿度为40%的空气环境中放置24 h后, 将发生明显的水解反应, 使LiPON薄膜表面形貌变得疏松、局部突起; PH3和NH3的产生, 使薄膜中磷元素和氮元素含量减少, 而Li2CO3的生成, 则使薄膜中碳元素和氧元素含量有明显的增加. LiPON电解质薄膜形貌和组成的变化, 造成了薄膜电化学性能的严重恶化.     

Precise Control of Metal Oxide Thin Films Deposition in Magnetron Sputtering Plasmas for High Performance Sensing Devices Fabrication

Magnetron sputtering deposition is a widely used technique to deposit thin film precisely at nanoscale level. During the deposition of metal oxide thin films, reactive oxygen gas is introduced into the deposition chamber. Pure metal and metal oxide materials can be used as sputter target, although the simplest way is by using a pure metal target. In such reactive process, the effect of target poisoning significantly influence the deposition process and the growth mechanisms of metal oxide thin films became very complex. In general, external parameters such as discharge power, working pressure, reactive gases ratio and substrate temperature are used to optimize the properties of deposited thin films. Then, ex-situ analyses such as scanning electron microscope and X-ray diffraction analysis are performed to obtain the optimized parameter. Sample depositions and ex-situ analyses consume time to achieve the goal through try and error. In this article, in-situ plasma diagnostics are reviewed focusing on an optical emission spectroscopy to precisely control and investigate the sputter target poisoning effect during the deposition of metal oxide thin films. The emission of atomic lines from several metal and oxygen atoms were used to discuss the deposition mechanisms and their correlation with the deposited thin films was observed. Finally, the deposited metal oxide thin films were proposed and tested for several applications such as gas sensor and frequency selective surface glass.     

Influence of the Plasma Chemistry on the Composition of ZrOx and NbOx Thin Films Deposited by Reactive Magnetron Sputtering

The plasma chemistry of magnetron sputtered Zr and Nb in an Ar/O₂ atmosphere has been measured as a function of the O₂ partial pressure. The previously reported composition of films deposited onto grounded non-intentionally heated substrates was correlated with the dominant positive and negative ion populations in the plasma. While the oxygen deficient films were grown in the Ar⁺ dominant mode, the close-to-stoichiometric films were grown in the O⁺/O⁻ dominant mode. The formation of close-to-stoichiometric ZrO_2.1 is observed in the compound mode (CM), while the formation of close-to-stoichiometric Nb₂O_4.7 thin films was reported in addition to the CM also in the transition mode (TM). This may be understood based on the 1.5–1.9 times higher power dissipated in the Nb–Ar–O₂ plasma as compared to the Zr–Ar–O₂ plasma. We suggest that at larger power O₂ dissociation may be more efficient and lead to the presence of sufficient atomic oxygen to fully oxidize the films. This finding may provide a pathway towards a deposition rate enhancement, since compound formation at the substrate is enabled in the TM of the higher power Nb–Ar–O₂ plasma and not only in the CM, as in the case of the lower power Zr–Ar–O₂ plasma.     

石墨烯/银复合薄膜的制备及表征

采用静电自组装技术,通过交替沉积聚(二烯丙基二甲基氯化铵)(PDDA)(或硝酸银)和氧化石墨烯,制备氧化石墨烯/PDDA薄膜和氧化石墨烯/硝酸银复合薄膜。然后在600℃下通入氩气和氢气进行气氛还原得到石墨烯薄膜和石墨烯/银复合薄膜。采用AFM、SEM、XPS、UV-Vis以及四探针电阻仪等对薄膜结构及性质进行表征。结果表明,通过静电自组装法可以获得生长均匀的薄膜。对比于相同自组装次数的石墨烯薄膜,石墨烯/银复合薄膜具有更好的透光性和更低的薄膜方块电阻。在λ=500 nm时,四层石墨烯/银复合薄膜的透过率为85%左右,而石墨烯薄膜的透过率为72%左右;石墨烯薄膜的方阻为161.39 kΩ.□-1,而石墨烯/银复合薄膜的方阻为99.11 kΩ.□-1。     

溅射参数对ZnO薄膜物性的影响

采用磁控溅射方法分别在ITO玻璃和硅片上成功制备了具有良好C轴取向的ZnO薄膜.并研究了溅射气压,基底温度,以及氧偏压对ZnO薄膜物性的影响,从而确定了制备ZnO薄膜的最佳溅射条件.     

ZnO/Ag复合膜的制备及其润湿性转换研究

利用溶胶-凝胶技术制备了ZnO/Ag复合膜. 采用X射线粉末衍射和扫描电子显微镜对其物相组成、 晶型结构以及表面形貌进行了表征, 采用接触角测试仪对其润湿性进行了表征, 并研究了紫外光照射下Ag的掺杂量对ZnO薄膜润湿性的影响. 结果表明, 当Ag掺杂量(摩尔分数)为5%时, 所得膜的润湿性转换速率最快, 紫外光照3 h后, 其润湿性由超疏水性转换为亲水性, 黑暗中放置5 d后, 亲水性再次转换为超疏水, 实现了润湿性的可逆转换.     

反应压强变化对Fe∶NiOx阳极催化薄膜性质的影响

采用磁控溅射法在镍衬底上制备了不同性质的Fe:NiOx薄膜, 通过改变反应压强, 发现薄膜的催化活性随着压强的增大而提高. 进一步利用EDX、XRD、XPS、SEM等分析发现, 薄膜的有效表面积、结晶度以及样品中Ni3+的含量都对样品的催化活性有影响. 另外对薄膜的透过特性也进行了研究, 发现当膜厚超过1000 nm后, 对波长小于500 nm的可见光几乎全部吸收, 表现出了很差的透光特性.     

Fe-Co-Ni合金纳米线有序阵列的模板合成与磁性

以二次阳极氧化的氧化铝膜为模板，用电化学沉积的方法成功地合成了Fe-Co-Ni三组份有序纳米线阵列.扫描电子显微镜（SEM）和透射电子显微镜(TEM)观察表明纳米线表面光滑、有序、高长径比；磁性测量表明,其矫顽力较同组份的膜材料有较大的提高.将样品在惰性气体氛围中不同温度下退火，随着退火温度增加，其纵向矫顽力有一个极值，而对应的横向矫顽力没有类似的变化，关于这一现象的机理,本文进行了初步的讨论. 图5参15     

Electrical Properties of Ag Thin Films Deposited by the Improved SILAR Method

Ag films were deposited on glass substrates using the successive layer adsorption and reaction (SILAR) method and characterized with XRD and AFM. The I‐V curves of the thicker Ag films obeyed ohmic law because of the formation of the continuous films. After annealing at 300°C in N₂, the conductance increased due to the removal of imperfections. Compared with the thicker film, the thinner Ag films showed nonlinear I‐V curves. After annealing, these films were inconductible. This may be ascribed to the destruction of the junction, that existed between the Ag islands. The absorption spectra of the films proved the formation of the Ag islands after annealing. With the thickness of the films further decreasing, the Ag films became insulated.     

Sol-Gel Preparation and Photoelectrochemical Properties of Fe2TiO5 Thin Films

Polycrystalline Fe₂TiO₅ films were prepared on nesa silica glass substrates by the sol-gel method, and their photoanodic properties were measured in a three-electrode wet cell with an aqueous buffer solution of pH = 7. Gel films were crystallized into Fe₂TiO₅ when fired at 500°C. The photoanodic current significantly increased when the films were fired at 700°C, and then decreased with increasing firing temperature. Thicker films obtained by repeating the gel film deposition and firing showed smaller photocurrent, and the 50 nm thick film prepared via non-repetitive deposition exhibited the maximum photocurrent. Although the photoresponse was extended to wavelengths near 500 nm, the maximum quantum yield was as low as 0.12 at a wavelength of 340 nm.     

金红石/锐钛矿混晶结构的TiO2薄膜光催化活性

采用磁控溅射法制备出一组金红石/锐钛矿混晶结构的纳米TiO2薄膜催化剂,并通过光催化降解苯酚实验考察该薄膜的催化性能. 光催化实验证明, 随着催化剂中金红石含量减少, 催化剂的光催化活性逐渐提高. X射线衍射(XRD)、X射线光电子能谱(XPS)、表面光电压谱(SPS)和原子力显微镜(AFM)结果表明, 催化剂为金红石和锐钛矿混晶结构, 并随着金红石含量减少, 催化剂的表面羟基(OH)和桥氧(—O—)的含量逐渐增加, 而且费米能级逐渐提高. 表面羟基和桥氧是有利于光催化的“活性物种”; 费米能级的提高使TiO2/H2O 面处TiO2的表面带弯增大, 导致了价带光生空穴参加光催化反应的几率增大, 有效地促进了光生载流子的分离; 这些因素是催化剂光催化活性逐渐提高的主要原因.     

锂离子电池用非晶态Si/Al/Si薄膜负极材料

采用磁控溅射法在铜箔集流体上沉积了具有“三明治”结构的Si/Al/Si三层薄膜. 高分辨率透射电镜(HRTEM)和选区电子衍射(SAED)分析结果表明, 该薄膜为非晶态. 扫描电镜(SEM)和能量散射X射线能谱(EDS)结果表明, 该薄膜总厚度约为4.0 μm, 循环100周后体积膨胀率为225％. 在1.5~0.005 V(vs. Li+/Li)和0.1 mA/cm2条件下, 该薄膜电极前5周衰减较快, 而后趋于平缓. 首次放锂量为0.88 mA·h/cm2, 循环5周后, 放锂量为0.71 mA·h/cm2, 100周后的放锂量仍能保持在0.61 mA·h/cm2. 研究结果表明, Al的加入有效地抑制了Si膜的体积膨胀, 使之具有良好的循环寿命. 交流阻抗结果表明, 随着循环次数的增加, 极化电阻首先从46.9 Ω·cm2(第1周)降低到36.2 Ω·cm2(第50周), 而后又升高到47.3 Ω·cm2(第100周). Al的加入提高了Si膜的导电性, 有效地降低了其极化电阻, 改善了Si膜的电压滞后现象.     

聚喹啉/杂多阴离子杂化LB膜的制备与光电性质

LB film of new hybrid Polyquinolin/Trilacunary heteropolytungstoilicate （PQ/SiW₉） was prepared and characterized by π-A isotherm, UV-Vis absorption spectroscopy, atomic force microscope(AFM), fluorescence spectroscopy. The results indicated that they had good film-forming property on the air-water interface. The molecular areas for these monolayers at zero pressure were estimated to be 7.2 nm²·mol^-1. The collapse pressure of LB film was 46 mN·m^-1. Their I～V curves results showed that the title LB films had good electric conductivity and the conductivity of the LB film increased with monolayers number.     

磁控溅射法制备CeO_2/PTFE/Nafion复合膜及性能研究

采用磁控溅射法在聚四氟乙烯(PTFE)微孔膜表面溅射CeO_2,制备了CeO_2/PTFE复合膜.利用接触角、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)和拉伸强度等对复合膜的亲水性、元素组成、形貌和机械强度进行测试,研究了溅射时间和溅射功率对膜性能的影响.结果表明,在溅射功率为40 W,溅射时间为120 s时,CeO_2/PTFE复合膜亲水性和拉伸强度都相对较好.在CeO_2/PTFE复合膜上浇铸Nafion树脂,制备的CeO_2/PTFE/Nafion复合膜含水率达到30%,离子电导率达到0.071 S/cm.     

Microstructure and Properties of Triethoxysilylpropylamine-Capped Polyurethane/Titania Hybrid Films

Triethoxysilylpropylamine-capped waterborne polyurethane/titania hybrid films were prepared by in situ method via sol-gel process of titanium n-butoxide under acidic condition. In the paper, we studied the effect of the contents of titania sol on the microstructure, mechanical property, water resistance, and optical property of the hybrid films. It was found, with introducing the content of titania, some physical properties such as tensile strength, modulus, water resistance, refractive index, heat resistance, and ultraviolet absorbance will increase. SEM and SAXS study suggested that the hybrid films had good planarization.     

直流反应磁控溅射制备的Mo掺杂TiO2薄膜的光电特性

通过直流反应磁控溅射制备了不同Mo掺杂量的Mo-TiO2薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)仪、X射线光电子能谱(XPS)仪、紫外-可见(UV-Vis)分光光度计详细研究了Mo掺杂量对薄膜表面形貌、晶体结构、元素价态及吸收带边的影响.用瞬态光电流和循环伏安法考察了不同Mo含量ITO/Mo-TiO2电极的光电特性.结果表明:在TiO2薄膜中掺入的Mo以Mo6+和Mo5+两种价态存在;随着Mo掺杂量的增加,Mo-TiO2薄膜的晶粒尺寸逐渐减小,晶格畸变增大,吸收阈值显著红移;薄膜的禁带宽度先减小后增大,在Mo掺杂量为2.7%(n(Mo)/n(Ti))时禁带宽度最小;Mo掺杂量为0.9%的样品在氙灯下的光生电流最大,且随着所加阳极偏压的提高光生电流并未呈现出饱和的趋势.此后随着掺杂量的提高,薄膜的光生电流开始下降,当Mo掺杂量达到3.6%时,薄膜的光电流小于未掺杂的样品;说明适当浓度的Mo掺杂能够提高Mo-TiO2薄膜光电性能,光生电流最大可达未掺杂的2.4倍.     

Energy Stabilities,Magnetic Properties,and Electronic Structures of Diluted Magnetic Semiconductor Zn1-xMnxS(001) Thin Films

We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn_1-xMn_xS(001) thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.     

Fe/Cr超晶格的电子结构和磁性质

应用密度泛函全势线性缀加平面波(FLAPW)方法研究了Fem/Crn (m=3, 4; n=1, 3, 4)超晶格的电子结构和磁性质. 结果表明, Fe3/Cr1和Fe3/Cr3体系的基态中, Fe层间存在铁磁耦合; 而Fe4/Cr4体系基态中, 存在反铁磁耦合; Cr层的磁矩方向交替变化, 交界面上的Fe和Cr间存在反铁磁耦合.