Improvement of efficiency of ITO/Se thin film solar cells using tellurium stimulator

Indium Tin Oxide ITO/Se thin film solar cells have been fabricated by vacuum deposition. Prior to deposition of selenium film, ultrathin tellurium film has been deposited on ITO thin film. Tellurium film acts as a stimulator for bringing improvement in crystallite size, adhesion to ITO and electrical behaviour of selenium thin films. The maximum efficiency of the ITO/Se thin film solar cells without tellurium stimulator and with tellurium stimulator under illumination AM1 (100 mW cm⁻²) are found to be 1.68% and 2.27% while under fluorescent tubelight (0.15 mW cm⁻²) are found to be 5.85% and 7.05% respectively. The ITO/Se thin film solar cells exhibits high spectral response at short wavelength. The barrier height of the ITO/Se thin film solar cells was determined.     

Characteristics of p-type nanocrystalline silicon thin films developed for window layer of solar cells

Different rf-power and chamber pressures have been used to deposit boron doped hydrogenated silicon films by the PECVD method. The optoelectronic and structural properties of the silicon films have been investigated. With the increase of power and pressure the crystallinity of the films increases while the absorption decreases. As a very thin p-layer is needed in p–i–n thin film solar cells the variation of properties with film thickness has been studied. The fraction of crystallinity and thus dark conductivity vary also with the thickness of the film. Conductivity as high as 2.46 S cm⁻¹ has been achieved for 400 Å thin film while for 3000 Å thick film it is 21 S cm⁻¹. Characterization of these films by XRD, Raman Spectroscopy, TEM and SEM indicate that the grain size, crystalline volume fraction as well as the surface morphology of p-layers depend on the deposition conditions as well as on the thickness of the film. Optical band gap varies from 2.19 eV to 2.63 eV. The thin p-type crystalline silicon film with high conductivity and wide band gap prepared under high power and pressure is suitable for application as window layer for Silicon thin film solar cells.     

Infrared spectroscopy of Li-diborate glassy thin films

This work presents a structural investigation of Li-borate thin film electrolytes prepared by rf-sputtering from targets having the nominal Li₂O–2B₂O₃ composition. Thin films of ca. 1 μm were deposited on Si wafers and gold-covered Si substrates under argon, and their infrared spectra were measured in the 30–5000 cm⁻¹ range. The measured spectra of thin films were compared with those calculated on the basis of the infrared properties of the bulk Li-diborate glass and by considering all optical effects in the film/substrate system. The results showed that the thin films have the key structural features of the bulk glass, but exhibit also differences in the short-range order structure and in the Li ion-site interactions. These findings were discussed in terms of cooling rate differences between melt-quenching for bulk glass and sputtering for thin films.     

WO3-based electrochromic system with hybrid organic–inorganic gel electrolytes

Thin metal oxide films for a WO₃-based symmetric electrochromic system with a nickel oxide layer as the counter electrode have been prepared by spray pyrolysis on SnO₂:F coated soda-lime float glass, at a temperature of 670–720 °C and using metal acetylacetonates as precursors. The films have been characterized for composition and morphology by scanning electron microscopy equipped with an X-ray energy dispersive analyzer (SEM/EDAX), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). Electrochromic properties have been examined in the electrochemical cells of a smart window arrangement using lithium ion doped sol–gel derived organic–inorganic hybrid materials as electrolytes. Hybrids with room-temperature ionic conductivities of 10^?4–10^?3 Ω^?1 cm^?1 have been synthesized from tetraethyl orthosilicate (TEOS) with an addition of 35 mass % of organic compounds. Coloration-bleaching of WO₃ films with lithium ions from hybrid electrolytes has resulted in the desired modulating the properties in the visible and near infrared spectrum range. An XPS analysis has shown the presence of a lower oxidized tungsten oxide phase (WO_2.92) in the WO₃ film.     

Photostimulated changes of properties of CdTe films

The effect of illumination during the close‐spaced sublimation (CSS) growth on composition, structural, electrical, optical and photovoltaic properties of CdTe films and CdTe/CdS solar cells were investigated. Data on comparative study by using X‐ray diffraction (XRD), scanning electron microscopy (SEM), absorption spectra and conductivity‐temperature measurements of CdTe films prepared by CSS method in dark (CSSD) and under illumination (CSSI) were presented. It is shown that the growth rate and the grain size of CdTe films grown under illumination is higher (by factor about of 1.5 and 3 respectively) than those for films prepared without illumination. The energy band gap of CdTe films fabricated by both technology, determined from absorption spectra, is same (about of 1.50 eV), however conductivity of the CdTe films produced by CSSI is considerably greater (by factor of 10⁷) than that of films prepared by CSSD. The photovoltaic parameters of pCdTe/nCdS solar cells fabricated by photostimulated CSSI technology (J_sc = 28 mA/cm², V_oc =0.63 V) are considerably larger than those for cells prepared by CSSD method (J_sc = 22 mA/cm², V_oc = 0.52 V). A mechanism of photostimulated changes of properties of CdTe films and improvement of photovoltaic parameters of CdTe/CdS solar cells is suggested. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dielectric Properties of Tin Oxide Thin Film Capacitors

Thin films of several thicknesses in the form of MIM structures are prepared from the powders of tin oxide (SnO₂) by thermal evaporation technique in a vacuum of 10⁻⁵ Torr. The dielectric properties of tin oxide film capacitors have been studied with temperatures varying from 77 to 400 K and also with frequency. At 77 K the values of capacitance and loss tangent are small for these films. With increasing temperature the values of capacitance and loss tangent increase. The capacitance-temperature plots show peak values of capacitance at 345 K for 1 kHz, 350 K for 2 kHz, 360 K for 5 kHz and 368 K for 10 kHz. These peak values of capacitance can be eliminated by repeated heating and cooling of the structures. The activation energy for the migration of charge carriers is calculated for tin oxide films and is found to be 0.13 eV. The results obtained on the dielectric properties of tin oxide thin films are presented and discussed.     

Characteristics of Dye-Sensitized Solar Cells Using TiO2 Nanotube Arrays with Large Surface Area by Spin-Coating Nanoparticle

Highly ordered TiO₂ nanotube arrays (TNAs) fabricated by anodization are very attractive for use in dye-sensitized solar cells (DSSCs), because of their superior charge percolation and slow charge recombination. Highly ordered, vertically aligned TNAs have been prepared by three-step anodic oxidation. In this work, we investigated such strategies for improving the efficiency of DSSCs. Based on one of these approaches, oxide semiconductors in the form of a TNA were used as a novel method for improving electron transport through a film. A solution containing an appropriate amount of TiO₂ nanoparticles was prepared, and the mixed slurry was spin-coated on a TNA film. The coated film provided a large surface area for dye adsorption. The DSSCs achieved a light-to-electric energy conversion efficiency of 5.91% under simulated solar irradiation at 100 mW/cm² (AM 1.5).     

Ageing effect on dielectric properties of SnO2, Sb2O3, and their mixed thin films

Thin films of various thicknesses in the form of MIM structures have been prepared from the powders of high purity of SnO₂, Sb₂O₃, and their mixed powders separately by the thermal evaporation technique in a vacuum of 10⁻⁵ Torr. The dielectric properties of these oxide thin films have been studied with ageing time and also with frequency at room temperature. The results obtained have shown that the capacitance and loss tangent of the structures initially fall off rapidly and thereafter they attain a constant value even after ageing the capacitors for about 20 days. The rapid fall of capacitance and loss tangent may be due to the rapid decrease in the density of defects due to ageing time. The results thus obtained on SnO₂, Sb₂O₃, and their mixed thin film capacitors are presented and discussed.     

High efficiency GaAs thin film solar cells by peeled film technology

p-GaAs/n-GaAs thin film concentrator solar cells were fabricated by Peeled Film Technology. This is the first paper that reports the concentration characteristics of thin film solar cells. The energy conversion efficiency of thin film solar cells at a concentration ratio of 109 is 9.4% and the output power density is 0.82 W/cm² · n-Ga_1?xAlxAs/p-GaAs heterojunction thin film solar cells were also fabricated. The initial heterojunction thin film solar cell with a Al mole fraction of 0.5 showed an efficiency of up to 13.5% (AM 1.5). It is proposed that Multi-Peeled Film Technology will give numerous GaAs thin films by selective etching of (GaAl)As/GaAs multi-layered structures.     

Optical properties of microcrystalline 3C–SiC:H films measured by resonant photothermal bending spectroscopy

Optical absorption coefficient spectra of hydrogenated microcrystalline cubic silicon carbide (μc-3C–SiC:H) films prepared by Hot-Wire CVD method have been estimated for the first time by resonant photothermal bending spectroscopy (resonant-PBS). The optical bandgap energy and its temperature coefficient of μc-3C–SiC:H film is found to be about 2.2 eV and 2.3 × 10⁻⁴ eV K⁻¹, respectively. The absorption coefficient spectra of localized states, which are related to grain boundaries, do not change by exposure of air and thermal annealing. The localized state of μc-3C–SiC:H has different properties for impurity incorporation compared with that of hydrogenated microcrystalline silicon (μc-Si:H) film.     

Mechanism of epitaxial ferrite-spinel layer formation on magnesium oxide substrate

The initial stage of small gap heteroepitaxial growth of magnesium-manganese ferrite films during chemical gas transportation reactions on orientation (100) magnesium oxide substrate was studied. Film growth would begin with origination of parallely oriented three-dimensional nuclei, their shapes at lower (1170 K) and at appear (1420 K) film synthesis temperature limits being different. After little islands had grown together and continuous layer formed the secondary nuclei would appear, their shapes resembling cut-up pyramids. Continuous layer minimum thickness was 0.15 μm. The growing together of little islands results in film block structure. Block sizes could be as big as 300–400 μm if films grow at the speed of 2 μm/min, the density of islands being 10⁶ cm⁻². Linear density of unconformity dislocations at film-substrate boundary would be (3.7 ÷ 7.4) 10³ cm⁻¹. It would depend on magnesium content for a film. Elastic stresses in films would come to 7 · 10⁸ ÷ 3 · 10⁹ dyne/cm². X-ray topography pictures of block structures and of accumulations of admixtures at block boundaries are presented.     

Investigation of the structure of thin rhenium films

The phase composition of thin rhenium films as depending on deposition conditions has been studied. In films deposited at a pressure of 10⁻⁵ torr impurity phases with simple cubic and hexagonal lattices were found. In films evaporated at a pressure of 10⁻⁸ torr only an hep phase equilibrium in bulk samples is formed. It has been concluded that in thin rhenium films no transitions to a fcc phase occurs. In the present work the dependence of thin film phase composition was investigated as a function of film thickness (∼5–500 Å), deposition rate (∼0.1–10 Å/sec) and substrate temperatur (∼ 20–450°C). The films were deposited on NaCl single crystals at a pressure of 10⁻⁵ torr (oil diffusion pump evacuation) an 10⁻⁸ torr (“Orbitron”-type pump evacuation). The measurement of film thickness was conducted by the optical interference method.     

Pressure Dependence of C–V Curve for Ferroelectric PbTiO3 Thin Films Prepared by RF Multi-target Magnetron Sputtering

Lead titanate thin films were prepared in-situ by RF magnetron sputtering method in the substrate temperature region of 550 °C ˜ 650 °C using Ti and Pb metal targets and oxygen gas. The films deposited at 650 °C for 60 min – when the applied power to the Ti and Pb target and deposition pressure were 200 W, 40 W, and 1.8 × 10⁻² Torr, respectively — had stoichiometric composition ratio and shown X-ray diffraction patterns of tetragonal structure like that of the powder. For the application to the piezoelectric field effect transistor (PI-FET), the substrate of SiO₂ (50 nm)/p-Si(100) was used. Leakage current density of the thin film was 7 × 10⁻⁸ A/cm² at 100 kV/cm, dielectric breakdown voltage was 1.8 MV/cm, and so it showed high insulator characteristics. Capacitance-voltage curve was measured as a function of pressure. The variation width of the capacitance was 6.5 pF at bias voltage of –4 volts, and the value increased linearly according to the pressure up to about 6 kgf/cm², and was saturated at the pressure of 8 kgf/cm².     

Infrared optical properties of Cu1−xLixSe2 thin films

Infrared absorption spectra of Cu_1−xLi_xInSe₂ thin films are measured at room temperature in the wavenumber range from 100 to 600 cm⁻¹. The spectra exhibit two absorption bands in the wavenumber ranges 200–210 cm⁻¹ and 330–355 cm⁻¹ which are ascribed to vibrational modes due to In Se and Li Se vibrations, respectively. The influence of the phase transition from the chalcopyrite structure to the β-NaFeO₂ structure in the composition range x = 0.5–0.6 on the vibrational characteristics is established and discussed.     

Toward the fast deposition of highly crystallized microcrystalline silicon films with low defect density for Si thin-film solar cells

In this study, employing a high-density, low-temperature SiH₄–H₂ mixture microwave plasma, we investigate the influence of source gas supply configuration on deposition rate and structural properties of microcrystalline silicon (μc-Si) films, and demonstrate the plasma parameters for fast deposition of highly crystallized μc-Si films with low defect density. A fast deposition rate of 65 Å/s has been achieved for a SiH₄ concentration of 67% diluted in H₂ with a high Raman crystallinity of X_c > 65% and a low defect density of (1–2) × 10¹⁶ cm⁻³ by adjusting source gas supply configuration and plasma conditions. A sufficient supply of deposition precursors, such as SiH₃, as well as atomic hydrogen H on film growing surface is effective for the high-rate synthesis of highly crystallized μc-Si films, for the reduction in defect density, and for the improvement in film homogeneity and compactability. A preliminary result of p–i–n structure μc-Si thin-film solar cells using the resulting μc-Si films as an intrinsic absorption layer is presented.     

Structural and optoelectrical properties of Ga‐doped ZnO semiconductor thin films grown by magnetron sputtering

Transparent conductive gallium‐doped zinc oxide (Ga‐doped ZnO) films were prepared on glass substrate by magnetron sputtering. The influence of substrate temperature on structural, optoelectrical and surface properties of the films were investigated by X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), spectrophotometer, four‐point probe and goniometry, respectively. Experimental results show that all the films are found to be oriented along the c‐axis. The grain size and optical transmittance of the films increase with increasing substrate temperature. The average transmittance in the visible wavelength range is above 83% for all the samples. It is observed that the optoelectrical property is correlated with the film structure. The Ga‐doped ZnO film grown at the substrate temperature of 400 °C has the highest figure of merit of 1.25 × 10⁻² Ω⁻¹, the lowest resistivity of 1.56 × 10⁻³ Ω·cm and the highest surface energy of 32.3 mJ/m².     

The growth of high-quality MCT films by MBE using in-situ ellipsometry

The ellipsometry and RHEED study of high-quality MCT films grown on (112)- and (130) CdTe and GaAs by MBE was carried out. The dependence of the ellipsometric parameter ψ on MCT composition is evaluated. It was shown that such parameters as growth rate, the surface roughness, initial substrate temperature, and film composition may be measured by the in-situ ellipsometry. The appearance of surface roughness was observed in the initial stage of MCT growth under various compositions (x_CdTe = 0 ÷ 0.4). The further growth at optimum conditions leads to the smoothing of the surface and supplies us with high-quality MCT films. The concentration, mobility, and life time of carriers in MCT films were respectively: n = 1.8 × 10¹⁴ ÷ 8.2 × 10¹⁵ cm⁻³, μ_n = 44000 ÷ 370000 cm² V⁻¹ s⁻¹, τ_n = 40 ÷ 220 ns; p = 1.8 × 10¹⁵ ÷ 8.4 × 10¹⁵ cm⁻³, μ_p = 215 ÷ 284 cm² V⁻¹ s⁻¹, τ_p = 12 ÷ 20 ns.     

硫化锡多晶薄膜太阳电池研究进展

由于硫化锡具有与硅相近的禁带宽度,安全环保,吸收系数也很高,因此非常适合做太阳能电池的吸收层,近年来已成为国内外专家的研究热点。本文围绕硫化锡薄膜材料的生长制备、性质表征以及基于硫化锡的薄膜太阳能电池的研究进展进行了较为详细的阐述,并对硫化锡太阳能电池的研究前景进行了探讨。     

Effect of substrate temperature on polycrystalline Cd0.9Zn0.1Te thin films studied by Raman scattering spectroscopy

Cd_0.9Zn_0.1Te thin films were prepared by vacuum evaporation onto well‐cleaned glass substrates maintained at 300, 373 and 473 K. X‐ray diffraction studies revealed that the films have zinc blende structure with preferential (111) orientation. Raman peak of the room temperature deposited film appeared at 140.30 cm^‐1 and 159.65 cm^‐1 were for the transverse optic (TO) and longitudinal optic (LO) phonons respectively. The XRD patterns of the higher substrate temperature deposited films exhibited an improvement in the crystallinity of the films. The Raman peak intensity increases and the FWHM decreases for the films deposited at higher substrate temperature. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Instabilitäten in anodischen Siliziumoxidschichten

Heat-treatment of anodic of silicon oxide films results in the shift of the SiO stretching band absorption peak in the IR-Spektrum from wave number 1055–1060 cm⁻¹ to 1095 cm⁻¹ characteristic for thermally grown silicon oxide films. Similar tendency can be observed by storage in atmosphere, too. This phenomenon can be explained by rearrangement of the SiO stretching bands.