Growth kinetics of ammonium oxalate monohydrate single crystals from aqueous solutions containing Co(II) and Ni(II) impurities

The growth kinetics of different faces of ammonium oxalate monohydrate (AO) single crystals from aqueous solutions containing different concentrations of Co(II) and Ni(II) ions at a constant temperature are described and discussed. It was found that: (1) at a given supersaturation σ, both Co(II) and Ni(II) ions lead to a decrease in the growth rates R of different faces of AO crystals, (2) the growth of a particular face of the crystals occurs above a critical supersaturation σ_d, but there is also another supersaturation barrier σ* when the rate abruptly increases with σ, and (3) the values of σ_d and σ* increase with increasing concentration c_i of the impurity. The experimental R(σ) data for different concentrations c_i of the impurities were analysed according to the model involving complex source of cooperating screw dislocations and concepts of instantaneous and time‐dependent impurity adsorption. Analysis of the data showed that: (1) adsorption of Co(II) and Ni(II) impurities occurs on the surface terrace of AO crystals, (2) there is a simple relationship between Langmuir constant K and the impurity concentration c_i* corresponding to maximum surface coverage, and (3) the ratio σ_d/σ* of the supersaturation barriers observed in the presence of both impurities increases with an increase in impurity concentration c_i, and may be explained from the standpoint of the mechanism of adsorption of impurity particles at kinks and ledges. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Mn(II) ions on the growth of ammonium oxalate monohydrate crystals from aqueous solutions: II. Growth kinetics

The experimental results of the effect of concentration of Mn(II) ions on the growth kinetics of different faces of ammonium oxalate monohydrate single crystals from aqueous solutions at a constant temperature and different predefined supersaturations are described and discussed. It was observed that: (1) at a given supersaturation σ, Mn(II) ions lead to a decrease in the growth rates of different faces of AO crystals, (2) the growth of a particular face of the crystals occurs above a critical supersaturation σ_d but there is also another supersaturation barrier σ* when the rate abruptly increases with σ, (3) the values of σ_d and σ* increase with increasing concentration of the impurity, and (4) the values of σ_d depend on the growth kinetics of a face but those of σ* are independent of face growth kinetics. The experimental R(σ) data for different Mn(II) concentrations c_i were analysed according to the model involving complex source of cooperating screw dislocations and concepts of instantaneous and time‐dependent impurity adsorption. It was found that: (1) for a given face the differential heat of adsorption Q_diff is higher during instantaneous impurity adsorption than that during time‐dependent adsorption, and (2) the values of Q_diff involved during instantaneous adsorption are related with face growth kinetics but those during time‐dependent adsorption are independent of face growth kinetics.     

Effect of Mn(II) ions on the growth of ammonium oxalate monohydrate crystals from aqueous solutions: I. Growth habit and surface morphology

The effect of concentration of Mn(II) ions on the growth habit and the surface micromorphology of different as‐grown faces of ammonium oxalate monohydrate (AO) single crystals grown from aqueous solutions was studied at a constant temperature of 30 °C and predefined supersaturations up to 20%. It was observed that the growth habit and the surface morphology of the crystals strongly depend on the supersaturation used for growth and the impurity concentration in the solution. The experimental results were analysed in terms of connected nets determined from different projections of the structure of AO crystals. Analysis of the observations revealed that: (1) the directions of connected nets corresponding to basic growth units composed of single (NH₄)₂C₂O₄ · H₂O molecules are in excellent agreement with the low‐index crystallographic directions of the orientations of growth layers, (2) all faces appearing in the growth morphology of AO crystals are F faces, and (3) the {001} face growing from pure aqueous solutions is essentially a kinetically rough face but the presence of Mn(II) impurity leads to their appearance in the morphology due to increase in the strength of bonds of the connected nets composing the surface graph.     

Effect of Supersaturation and Temperature on the Growth Morphology of Ammonium Oxalate Monohydrate Crystals Obtained from Aqueous Solutions

The experimental results of a study of the effect of supersaturation and temperature on the growth morphology of ammonium oxalate monohydrate [(NH₄)₂C₂O₄H₂O; AO] single crystals obtained from aqueous solutions at 30 and 40 °C and supersaturation up to 9% are presented. The observations are analysed in terms of theoretical morphology, growth models and attachment energy for growth units in steps of growing faces.     

On the origin of supersaturation barriers during the growth of single crystals from aqueous solutions containing impurities – a review

A generalised treatment of the appearance of supersaturation barriers σ_d, σ* and σ** during the growth of single crystals is outlined from the standpoint of well‐defined critical values of relative step velocities on a face. The final theoretical expressions are based on the premise that: (1) there are critical values of the relative step velocities associated with different average distances between adsorbed impurity particles during instantaneous, time‐dependent and time‐independent adsorption of the impurity on the growing surface, (2) the growth rate of a face is proporptional to velocity of steps on the growing face, and (3) Freundlich and Langmuir adsorption isotherms apply for different impurities. The theoretical expressions are then used to critically analyse the experimental data on supersaturation barriers observed during the growth of ammonium oxalate monohydrate and potassium dihydrogen phosphate single crystals from aqueous solutions containing different impurities. It was found that: (1) Langmuir adsorption isotherm is more practical for the analysis of the experimental data of the dependence of supersaturation barriers σ_d, σ* and σ** on the concentration c_i of an impurity, and (2) the ratios σ_d/σ* and σ*/σ** of successive supersaturation barriers for an impurity either increases or remains constant with an increase in impurity concentration c_i, and may be explained in terms of the mechanism of adsorption of impurity particles. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Solution Growth and Characterisation of L‐alanine Single Crystals

Single crystals of L‐alanine have been grown from buffered aqueous solutions and characterised as to their optical quality via wavefront distortion analysis, electrooptical response and harmonic generation efficiency. Refraction indices as well as phase matching loci were found in satisfactory agreement with previously published data for crystals grown in non buffered solution. Estimates for the electro‐optical response are reported for the first time. The experimentally observed crystal habit is discussed in terms of morphological importance (M.I.), which was found to be in disagreement with the predictions of crystallographic criteria based on the interplanar distance d_hkl, on the periodic bond chains (PBC) and the attachment energy E_att. This disagreement is tentatively attributed to the presence of impurities and non‐appropriate supersaturation conditions.     

Kinetics of crystal growth of mirabilite in aqueous supersaturated solutions

The crystallization of sodium sulfate decahydrate (Na₂SO₄·10H₂O, mirabilite) from supersaturated solutions was investigated using stable supersaturated solutions seeded with mirabilite seed crystals. The experiments were done in batch, stirred reactors in which the supersaturated solutions were prepared either by dissolution of sodium sulfate anhydrous at 32 °C followed by cooling to 18 or 20 °C or by mixing equal volumes of equimolar ammonium sulfate and sodium hydroxide solutions at 20 °C. Inoculation of the solutions supersaturated only with respect to mirabilite with seed crystals was accompanied with temperature increase of the thermostated solution. Despite the fact that crystal growth was initiated with seed crystals, the process started past the lapse of induction times inversely proportional to the solution supersaturation. The rates of crystal growth were measured both from the temperature rise and from the concentration–time profiles, which were linearly correlated. The measured crystal growth rates showed a parabolic dependence on supersaturation at low supersaturations. For higher values this dependence changed to linear, a behavior consistent with the BCF spiral crystal growth model. The morphology of the crystals growing at 20 °C showed typical prismatic habit, while at 18 °C when crystallized from cooled sodium sulfate solutions changes in the crystal habit to a leaf like morphology were observed.     

The influence of γ-irradiation on ferroelectric and polarization properties of TGS crystals

The experimental investigation of pyroelectric and polarization properties of TGS crystals was made. TGS crystals were grown under constant growth conditions (temperature and supersaturation of the solution) and γ-irradiated in a wide range of irradiation. The influence of γ-irradiation on the quality parameter M₂ of crystals, on the form of hysteresis loops, on size of spontaneous polarization and shifting field was ascertained.     

Microstructures on {111} faces of stannic iodide single crystals

Single crystals of stannic iodide (SnI₄) havebeen grown using the controlled reaction between SnCl₂ and KI by diffusion process in silica gel medium. Orange to reddish octahedral stannic iodide crystals up to 3–4 mm in size have been grown at room temperature. Optical studies have been made on the various surface structures of {111} faces of the asgrown crystals. On octahedral faces of these crystals, triangular-shaped hillocks with growth layers in the 〈110〉 directions have been observed. Occasionally, growth spirals on octahedral faces have also been reported. Close loops of growth fronts have been investigated and have been interpreted. It has been suggested that two-diemensional nucleation, spreading and pilling up of triangular growth layers is mainly responsible for the growth and occasionally the growth is due to screw dislocations. The implications are discussed.     

Growth of borax crystals by spiral mechanism

Borax crystals grown at low supersaturation values are described. A brief report about microtopographical studies of these crystals is presented. Growth spirals observed on almost all the habit faces except those in contact with the bottom of the nucleation cell are described and discussed. It is established that all these crystals have platelet form in the initial stages of crystallization and as growth proceeds they develop and grow by spiral mechanism. The conditions under which the screw dislocations play the role in the development and growth of the crystals have been worked out.     

Growth Rate anisotropy of the K2(S,Cr)O4 Mixed Crystals Grown from Aqueous Solution

The ratio of growth rates of the K₂(S,Cr)O₄ crystals in the [100] and [001] directions (the anisometry coefficient) is proportional to the initial effective supersaturation of the solutions from which the crystals were grown. The values of the factors of asymmetry and excess of distribution of the crystal anisometry coefficient are affected by the composition of solution. The change in the values of these factors is caused by the change in the value of the initial supersaturation of solution according to the specific features of the solubility diagram.     

LPE growth of DH laser structures with the double source method

For the reproducible processing of double heterojunction injection laser structures to stripe geometry laser diodes, e.g. by proton bombardment, the thickness of the p-Ga_0.7Al_0.3As confining layer and of the p-GaAs top layer are of great importance. It is shown that the thickness control of these layers grown by liquid phase epitaxy can be improved considerably by introducing two source crystals into the growth system. Both source crystals are brought into contact with the solutions consecutively and prior to the seed. If this method is combined with the use of relatively thin melts (about 2 mm), a growth scheme may be chosen such that the growth rates of the p-GaAlAs and of the p-GaAs layers have reached a practically constant value on the seed crystal, independent of the initial degree of supersaturation. This behaviour is found to be in accordance with the diffusion-limited growth model applied for thin solutions, including a temperature dependence for both the diffusion constant and the slope of the liquidus curve. The results indicate that a second solid phase may appear in the p-GaAlAs solutions at a supersaturation as small as 4°C, which reduces the growth rate on the substrates by a factor of about 2. This situation is different from that of GaAs solutions, where a second phase appears only at a much higher degree of supersaturation. For the p-GaAlAs and the p-GaAs layers a thickness control of ⁺_-0.2 μm is thus achieved with this growth method, without the necessity of very precise temperature control and weighing so as to keep the total supersaturation less than 0.2°C.     

Microhardness studies on as‐grown (111) faces of some alkaline earth nitrates

Single crystals of Sr(NO₃)₂, Ba(NO₃)₂ and Pb(NO₃)₂ are grown from their aqueous solutions at a constant temperature of 35 °C by slow evaporation technique. Crystals of size 8 to 10 mm along one edge are obtained in a period of 10 days. Chemical etching technique has been employed to study the dislocations in these crystals. The dislocations are randomly distributed and the dislocation density is about 10⁴ to 10⁵ /cm². Microhardness studies are made on as–grown (111) faces of these crystals upto a load of 100 g. The hardness of the crystals increases with an increase in load and thereafter it becomes independent of the applied load. These results are discussed on the basis of reverse indentation size effect. Meyer index number n for these crystals is estimated at both low and high load regions. An analysis of hardness data of these crystals as well as some other cubic crystals like alums and alkali halates are discussed using Gilman–Chin parameter H_v/C₄₄, where H_v is the microhardness and C₄₄ is the shear constant. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study of the Growth Morphology of Ammonium Oxalate Monohydrate Crystals Obtained from Aqueous Solutions

The experimental results of the growth morphology of ammonium oxalate monohydrate [(NH₄)₂C₂O₄ · H₂O; AO] single crystals obtained from aqueous solutions at 30 and 40 °C and supersaturation up to 9% are presented. The observations are compared with the theoretical morphology predicted by PBC analysis and Braivais-Donnay-Harker law.     

Growth mechanism of crystals from aqueous solutions

Microscopic processes occurring on the surface of a growing crystal or a dissolving one were observed by microcinematography. The crystals under observation were grown either in a drop of solution by evaporation or in a constant-temperature microscope stage at a chosen supersaturation. Small (approx. 0.1 mm) and large (approx. 10 mm) crystals of NaCl, Pb(NO₃)₂, NaNO₃, CdI₂, KDP and ADP were studied. It is concluded qualitatively that the layers, in general polygonal, originating in one or several active centres, are formed on the crystal face, never at the corners or edges. – The average velocity of layer motion was studied quantitatively in dependence on their thickness and supersaturation. The layer motion at constant supersaturation considerably fluctuated. – Surface patterns created by moving layers agree in most cases with predictions of the dislocation theory. Two categories of steps were found on the surface: ”︁real”︁ macrosteps and shock waves. – The velocity of layer motion for most compounds lies within (1–10) · 10⁻⁴ cm · s⁻¹.     

Kinetics of sodium fluosilicate precipitation

The formation of Na₂SiF₆ by discontinuous precipitation of dilute H₂SiF₆ with a 40% excess of an aqueous solution of NaCl under various conditions was studied. The values of induction time, number of crystals formed, their final size and their habit were determined during precipitation from solutions, whose initial supersaturation was 2 < S < 11. At S < 7–8 the crystals were formed by heterogeneous nucleation, whereas at S ≳ 7–8 homogeneous nucleation mechanism began to prevail. Once formed, the Na₂SiF₆ crystals were growing according to the screw-dislocation mechanism till they reached visible size; the corresponding values of kinetic order of nucleation and of the growth rate constant were g = 1.35 and k_g = 4.32 × 10⁻⁸ cm^2.05 sec⁻¹ g^−0.35, resp. The value of interfacial tension on the phase boundary Na₂SiF₆ crystal — saturated solution was determined (σ ∼ 52 erg/cm²). The resulting Na₂SiF₆ crystals conformed to log-normal distribution irrespective of conditions of precipitation. The dependence of the final size of crystals on supersaturation exhibited a maximum at S ∼ 6. Crystals of Na₂SiF₆ had a hexagonal habit, which was near to a spherical form at lower supersaturations, while dendritic crystals were formed at higher supersaturations.     

Spherulitic crystallization of β‐In2Te3 by physical vapour deposition

Different morphologies of indium telluride (In₂Te₃) including novel spherulites were crystallized using the physical vapour deposition (PVD) method, by varying the difference in the growth and source zone temperature (ΔT) of a dual zone horizontal furnace assembled indigenously. Whiskers and kinked needles of In₂Te₃were grown at ΔT = 250 K and 300 K respectively, maintaining the growth zone at 500 °C. At high supersaturation (Δ T = 400 K), spherulitic crystals were obtained. The stoichiometric composition of these crystals has been confirmed using energy dispersive analysis by x‐rays (EDAX). The structure of β‐In₂Te₃ spherulitic crystals is identified as zinc blende with lattice parameter a = 6.159 Å, from x‐ray diffraction (XRD) studies. The scanning electron microscope (SEM) images revealed the radial structure of the grown spherulites. The growth mechanism for the spherulitic crystallization of β‐In₂Te₃ crystals has been discussed based on the theoretical models. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and etching of calcite crystals

Single crystals of calcite (CaCO₃) have been grown by the method employed by GRUZENSKY , using an aquoeus solution of CaCl₂ and a solid (NH₄)₂SO₃, The chemical reaction takes place according to the following equation: CaCl₂ + (NH₄)₂SO₃ CaCO₃ + 2 NH₄Cl The crystals grown by this method are about 0.2 to 0.8 mm in edge dimensions. Synthetic calcite crystals have been cleaved along (100) planes and the cleavage surfaces have been studied by multiple beam interferometry. The interferograms have revealed that the cleavages are quite flat. The cleavage faces have also been chemically etched and the etch patterns studied optically. By etching a cleavage successively for three different periods it was found that the bottoms of the point-bottomed pits follow a linear etch path. By etching a cleavage pair, one face in one etchant and the other face in a different etchant and by comparing the etch patterns produced, before and after polishing a cleavage face it has been shown that the etch pits nucleate at the sites of dislocations in the crystal. The etch patterns have also been compared with those produced on the cleavage faces of natural crystals. The density of dislocations in the syntheitc calctie crystals was generally less than the density of dislocations in the natural calcite crystals. The implications have been discussed.     

Growth aspects of barium oxalate monohydrate single crystals in gel medium

Single crystals of barium oxalate monohydrate (BaC₂O₄.H₂O, BOM) were grown in pure form by controlled diffusion of Ba²⁺ using the gel technique at different temperatures. Starting from aqueous Ba²⁺ chloride (BaCl₂) and acetic acid (C₂H₂O₄) in gel, this method offers a low‐cost and an easiest alternative to other preparation methods for the production of barium oxalate bulky single crystals. The optimal conditions for the growth of BOM crystals in silica gel were found by investigating different growth parameters such as gel pH, gel aging and crystallization temperature. Irrespective of all such crystallization environments, growth rate of the crystals were initially less and then exhibited supersaturation effect leading to non‐linearity. Gel aging and temperature has profound effect on nucleation density that resulted less number of crystals of maximum size in the gel matrix. Perfect single crystals were grown on gels of higher pH. The macropore morphology and porosity was controlled by changing age of the gel. It has been found that temperature has a fabulous effect in controlling the nucleation density by altering the supersaturation conditions for the formation of critical nuclei. The entire growth kinetics informed that the grown crystals were derived by the one dimensional diffusion controlled process. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method

The dependency of LPE growth rate and dislocation density on supersaturation in the growth of GaN single crystals in the Na flux was investigated. When the growth rate was low during the growth of GaN at a small value of supersaturation, the dislocation density was much lower compared with that of a substrate grown by the Metal Organic Chemical Vapor Deposition method (MOCVD). In contrast, when the growth rate of GaN was high at a large value of supersaturation, the crystal was hopper including a large number of dislocations. The relationship between the growth conditions and the crystal color in GaN single crystals grown in Na flux was also investigated. When at 800 °C the nitrogen concentration in Na–Ga melt was low, the grown crystals were always tinted black. When the nitrogen concentration at 850 °C was high, transparent crystals could be grown.