X-ray and electron microscopy studies of arsenium implanted silicon crystals after a pulsed laser annealing

The structural changes obtained due to laser annealing in the surface layer of As-implanted silicon crystals were investigated by means of a triple crystal spectrometer. The rocking curves of implanted crystals do not show any changes compared with non-implanted crystals. It was caused by the large dose of ions which amorphized the surface layer. Laser annealing process influenced on the broadening of rocking curve. The comparative studies were carried out by using the HTEM technique. They showed that the laser annealing caused formation of quasi-mosaic structure, planar defects and dislocation clusters. These defected structure and local strains influence on the broadening of rocking curves.     

X-ray electrono-optical and SIMS characterization of Si crystals implanted with Bi ions before and after rapid thermal annealing

The purpose of the presented paper is to find out what kinds of information on surface layer structure of implanted silicon after rapid thermal annealing can be acquired by such non-destructive methods as X-ray diffractometry and its complementary RHEED technique. The experiments were performed on Si crystals implanted with Bi ions. The studies showed that using the anomalous X-ray transmission of the wavelength of 1.54 Å we are able to determine the defect concentration introduced by ion implantation with different doses as well as the effects of defect annealing. It was also shown using the REED that the surface layer of ca. 50 Å thick remains amorphous after RTA probably due to the oxidation. The measurements by using SIMS pointed also out that at the crystal surface there was a small amount of Bi atoms accumulated after RTA.     

Writing of birefringent lines in LBG glasses by UV pulsed laser irradiation

Glass isotropy could be broken by using the electric field of the 355 nm wavelength delivered by a nanosecond YAG: Nd³⁺ laser. In this way, pulsed laser-induced birefringence was obtained in the La₂O₃–B₂O₃–GeO₂ (LBG) glassy system. Buried lines behaving like waveguides were written in glasses using this laser irradiation process. Micro Raman spectra performed in irradiated points of glasses revealed a rotation of the light polarization in agreement with previous results obtained on thermally-poled LBG glasses. However, no orientation effects of irradiated points related to the direction of the laser wave polarization (UV poling) could be clearly evidenced as suggested in our last paper. The interaction of the glass with the electromagnetic field of the UV laser beam can be more probably described by mechanisms based on a densification process.     

Preparation and characterization of Si sheets by renewed SSP technique

Silicon sheets from powder (SSP) ribbons have been prepared by modified SSP technique using electronic-grade (9N purity) silicon powder. The surface morphology, crystallographic quality, composition and electric properties of the SSP ribbons were investigated by surface profiler, X-ray diffraction (XRD), scanning electron microscopy (SEM), metallurgical microscope, Auger electron spectroscopy (AES) and four-point probe apparatus, respectively. The results show that the SSP ribbon made from electronic-grade silicon powder is a suitable candidate for the substrates of crystalline silicon thin film (CSiTF) solar cells, which could meet the primary requirements of CSiTF solar cell process on the substrates, including surface smoothness, crystallographic quality, purity and electric conductivity, etc.     

Growth of YCOB single crystals by flux technique and their characterization

Nonlinear optical single crystals of YCOB with good optical quality were grown by the flux technique for the first time. Polycrystalline YCOB samples were synthesized by solid state reaction method. The thermal analysis of the sample was performed with lithium carbonate flux in different weight proportions and the growth temperature was optimised. Single crystals of YCOB with dimensions 3 × 3 × 5 mm³ were obtained by the method of ‘slow‐cooling’. The grown crystals were characterized by XRD, UV‐VIS‐NIR, EDAX, FTIR and etching studies. The powder XRD pattern revealed the formation of YCOB compound. The lattice parameters were identified through single crystal XRD studies. The UV‐VIS‐NIR results showed that the crystal has a sharp cutoff at 220 nm and is nearly 55% transparent over a wide wavelength range enabling applications in the UV region. The EDAX measurement revealed the ‘flux‐free’ crystal formation. The presence of the functional groups belonging to the YCOB crystals was identified by the FTIR results. ‘Hillock‐like’ patterns are observed in the etching studies. The primary emphasis in this study is laid to describe ‘flux technique’ as an alternative method to grow YCOB crystals. The results are presented and discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoinduced changes in UV absorption spectra of nitrogen-doped silica caused by exposure to ArF excimer laser

Absorption spectra of high-purity silica, in which 1.2% or 3.0% oxygen atoms are replaced by nitrogen, are measured in the spectral interval of 3.0–6.5 eV. Photoinduced changes of these spectra when exposed to 193 nm wavelength excimer laser radiation, pulse intensity being ～50 mJ/cm², are examined. Absorption spectra relaxation under subsequent annealing as well as changes brought about by saturation of glass with molecular hydrogen are studied. Parts of graded-index fiber ～1 mm in length and 200 μm thick transverse slices of a fiber preform served as samples. It is found that exposure of fiber samples to laser irradiation brings about a significant decrease of initially more intense absorption band of Si-ODC in the region of 5.0 eV and an increase of initially less intense band centered at 5.8 eV at a time. In bulk samples correlation of these bands is opposite, photoinduced changes are less expressed against structureless absorption tail increase in the spectral interval of 3.0–6.5 eV. It is shown that subsequent 20 min 700 °С annealing leads to the relaxation of photoinduced changes in absorption spectra in bulk and fiber samples. By placing irradiated samples into molecular hydrogen atmosphere at room temperature absorption bands are suppressed and transparency at shorter wavelengths of UV region is increased. Data obtained is discussed in the context of photosensitivity of nitrogen-doped silica-core fibers, which serve a technological platform for thermoresistant in-fiber Bragg gratings fabrication.     

Structural,electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique

Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X‐Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1 × 10⁹ to 6.5 × 10⁵ Ω‐cm. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for as‐grown, 36 and 472 meV for as‐implanted and 39 and 647 meV for implanted and annealed GaSe single crystals at 500°C. Calculated activation energies from the conductivity measurements indicated that the transport mechanisms are dominated by thermal excitation at different temperature intervals in the implanted and unimplanted samples. By measuring photoconductivity (PC) measurement as a function of temperature and illumination intensity, the relation between photocurrent (I_PC) and illumination intensity (Φ) was studied and it was observed that the relation obeys the power law, I_PC αΦⁿ with n between 1 and 2, which is indication of behaving as a supralinear character and existing continuous distribution of localized states in the band gap. As a result of transmission measurements, it was observed that there is almost no considerable change in optical band gap of samples with increasing annealing temperatures for as‐grown GaSe; however, a slight shift of optical band gap toward higher energies for Ge‐implanted sample was observed with increasing annealing temperatures. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

The effect of the supply of depleted Si solute elements on the compositional variation in the Si-rich SiGe bulk crystals was studied using the method which was used to grow Ge-rich SiGe single crystals with a uniform composition. By selecting the proper pulling rate, we can obtain Si-rich Si_1−xGe_x bulk crystals with uniform composition of x=0.1 without using the supply mechanism of depleted Si solute elements. When the supply mechanism of Si solute elements was used, the initial composition in Si-rich SiGe crystals can be much more easily determined by controlling the growth temperature than that in Ge-rich crystals because the Si seed crystal is not melted down. The supply of Si solute elements is very effective to change the compositional variation even for Si-rich SiGe crystals.     

Magnetic behaviors of amorphous Fe78Si9B13 thin films prepared by pulsed laser deposition

Amorphous magnetic thin films have been deposited onto BK-7 substrates using the pulsed laser deposition technique. The source material irradiated by the laser was a pack of amorphous ribbons of composition Fe₇₈Si₉B₁₃. The structural properties of thin films were investigated and a large number of droplets were observed in the magnetic layers. Electric current passing through the films causes significant deformation of droplets and consequently changes the magnetic thin films characteristics. Magnetic properties evolution after electrical processing was investigated using magneto-optical Kerr effect.     

Fabrication and characteristics of CeO2 films on Si(1 0 0) substrates by pulsed laser deposition

A detailed investigation about the dependence of film orientation on deposition temperature and ambient oxygen pressure has been carried out for CeO₂ films on Si(1 0 0) substrates using pulsed laser deposition. It has been found that the CeO₂ film orientation varies with increasing oxygen pressure at 750°C deposition temperature. In addition, the recovery of preferential orientation of CeO₂ films grown at 20 Pa ambient oxygen pressure with increasing deposition temperature has also been found for the first time. X-ray photoelectron spectroscopy (XPS) measurements confirm that stoichiometric CeO₂ films can be grown at lower oxygen pressure (5×10⁻³ Pa). HRTEM result also indicates that the CeO₂ films grown at low oxygen pressure are of high crystallinity.     

Growth and characterization of calcium hydrogen phosphate dihydrate crystals from single diffusion gel technique

Calcium hydrogen phosphate dihydrate (CaHPO₄·2H₂O, CHPD) a dissolved mineral in urine is known to cause renal or bladder stones in both human and animals. Growth of CHPD or brushite using sodium metasilicate gel techniques followed by light and polarizing microscopic studies revealed its structural and morphological details. Crystal identity by powder x‐ray diffraction confirmed the FT‐IR and FT‐Raman spectroscopic techniques as alternate methods for fast analysis of brushite crystals which could form as one type of renal stones. P‐O‐P asymmetric stretchings in both FT‐IR (987.2, 874.1 and 792 cm^‐1) and FT‐Raman (986.3 cm^‐1, 1057.6 cm^‐1 and 875.2 cm^‐1) were found as characteristics of brushite crystals. Differential Scanning Calorimetry (DSC) analysis revealed brushite crystallization purity using gel method by studying their endothermic peaks. This study incorporated a multidisciplinary approach in characterizing CHPD crystals grown in vitro to help formulate prevention or dissolution strategy in controlling urinary stone growth. Initial studies with 0.2 M citric acid ions as controlling agent in the nucleation of brushite crystals further support the presented approach. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod

A distribution of Al and In impurities in Ge_{1 ? x} Si _x crystals (0 ≤ x ≤ 0.3) grown by a modified Czochralski method (with continuous feeding of melt using a Si rod) have been studied experimentally and theoretically. Experimental Al and In concentrations along homogeneous crystals have been determined from Hall measurements. The problem of Al and In impurity distribution in homogeneous Ge-Si single crystals grown in the same way is solved within the Pfann approximation. A set of dependences of Al and In concentrations on the crystal length obtained within this approximation demonstrates a good correspondence between the experimental and theoretical data.     

Comparative characterization of boron-implanted silicon after pulse laser annealing along single traces by SEM (SE,EBIC) and TEM studies

(111) oriented n-type silicon wafers which were implanted with 2 × 10¹⁵ B⁺/cm² at 77 K and at an energy of 60 keV are laser annealed (Nd:YAG pulse laser) in air for mean laser powers between P = 1.8 W and P = 4.0 W. The comparative application of scanning electron microscopy (SE, EBIC) and high voltage transmission electron microscopy (HVTEM, 1000 keV) allows an estimation of the annealing quality in separated lines without overlapping. Values specifically ascertained by SEM in the SE contrast mode for the annealing threshold power P _th, the power range for optimal annealing ΔP ₀ and for the geometric width of the monocrystalline resolidification perpendicular to the direction of the specimen movement (and related to the spot diameter) at different laser pulse powers P agree completely with the results found in EBIC. At an optimal laser pulse power of P ₀ = 3.2 W HVTEM enables monocrystalline epitaxially resolidified areas free of defects to be identified in the same geometric width as that ascertained by SE and EBIC.     

Synthesis and characterization of semiconductor metal sulfide nanocrystals using microemulsion technique

The semiconductor nanocrystals ZnS, PbS, CdS and CuS were synthesized via microemulsion technique involving metal acetate, reducing agent (Na₂S) and Triton X‐100 as surfactant. Nanocrystals were characterized by X‐ray diffraction (XRD), transmission electron microscopy (TEM) and dynamic light scattering (DLS). The average size of ZnS, PbS, CdS and CuS nanocrystals were found to be 5.6 nm, 13.3 nm, 11.4 nm and 6.2 nm, respectively. Different parameters like surfactant (Triton X‐100) concentration, water‐to‐surfactant ratio (ω), precursor concentration [zinc acetate, (Zn(AC)₂], reducing agent concentration [sodium sulphide, (Na₂S)] were optimized to synthesize ZnS quantum dots.     

Growth and optical absorption spectra of ZnO films grown by pulsed laser deposition

ZnO films on Al₂O₃ substrate were grown by using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were calculated. The results of the XRD measurement indicate that ZnO film was strongly oriented to the c-axis of hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full-width half-maximum for a theta curve of the (0 0 0 2) peak was 0.201°. Also, from the PL measurement, the grown ZnO film was observed to be a free exciton, which indicates a high quality of epilayer. The Hall mobility and carrier density of the ZnO film at 293 K were estimated to be 299 cm²/V sec and , respectively. The absorption spectra revealed that the temperature dependence of the optical band gap on the ZnO films was − .     

Structure and magnetism of ZnO/Co multilayers prepared by pulsed laser deposition

ZnO/Co multilayers were fabricated on silicate (100) substrate by a pulsed laser deposition method at room temperature. The x‐ray diffraction (XRD) results reveal that the as‐deposited multilayer film is composed of amorphous phase, which leads to high saturation magnetization and low coercivity. Higher coercivity is observed in the ZnO/Co films annealed at 390 °C due to the formation of crystalline metallic Co and semiconducting ZnO. But much higher annealing temperature leads to the oxidation of metallic Co and the reaction between Co and ZnO, which decreases the saturation magnetization and coercivity obviously.     

Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition

Epitaxial GaN films have been grown on c-cut sapphire substrates by pulsed laser deposition (PLD) using a KrF laser. The properties of GaN films were improved by increasing the growth temperature to 800°C and the nitrogen pressure during growth to 10 mTorr. Room-temperature photoluminescence exhibits a strong band-edge emission at 3.4 eV. From transmission electron microscopy (TEM), the predominant defects in PLD-GaN observed are stacking faults parallel to the interface and screw dislocations along c-axis, the latter differing from the previously published results where most of the threading dislocation in GaN grown by other techniques are of edge type with Burgers vector of .     

Structure and optical properties of light-emitting Si films fabricated by neutral cluster deposition and subsequent high-temperature annealing

As a new development of our previous study on the production of light-emitting amorphous Si (a-Si) films by the neutral cluster deposition (NCD) method, we have fabricated light-emitting Si films with improved emission intensity by the combined methods of NCD and subsequent high-temperature annealing. The structure of these films is best characterized by Si nanocrystals, surrounded by an interfacial a-SiO_x (x < 2) layer, embedded in an a-SiO₂ film. These improved Si films were observed by atomic force microscopy and high-resolution transmission electron microscopy, and analyzed by means of X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence (PL) and Fourier transform infrared-attenuated total reflection measurements. The PL curves of the annealed samples exhibit peaks around 600 nm, at almost the same position as the unannealed samples. Their PL intensities, however, have increased to approximately five times those of the unannealed samples. The source of the luminescence is most likely due to electron-hole recombination in the a-SiO₂/Si interfacial a-SiO_x layer.