Structural aspects of solid-state amorphization in GaSb single crystals

As is well known, the GaSb I phase that is stable at room temperature is transformed under high pressures and temperatures into the GaSb II phase, which, being frozen in liquid nitrogen, becomes a metastable phase. The X-ray studies of GaSb II under heating showed the formation of two “thermally reversible” phases providing halolike X-ray diffraction patterns. It was also shown that the low-angle scattering spectrum also reversibly changes with the temperature and that macrocrystalline grains appearing during heating at elevated temperatures dissipate in the process of the subsequent specimen cooling. The structural states observed are interpreted as paracrystalline.     

Hydrogen passivation of residual acceptors in GaSb single crystals

Undoped GaSb single crystals were grown using the Czochralski method without encapsulant in an atmosphere of ionized hydrogen. It has been found that the resistivity increased by more than one order of magnitude (0.6–0.8 Ω cm) in comparison with the crystals grown under molecular hydrogen atmosphere only. A certain asymmetry in acceptor and donor passivation is assumated, because the Hall concentration does not change along the direction of crystal growth ((3.3–3.5) × 10¹⁷ cm^-3) and it is comparatively higher. Donors are passivated more than acceptors, which should be confirmed by increasing resistivity and decreasing mobility.     

Doping of KDP single crystals with cerium: Growth and optical properties

The features of doping of KDP crystals with cerium ions and organocerium complexes with alizarin complexon and arsenazo III have been investigated. It is established that “direct” doping by introducing cerium salts into the initial solution cannot be implemented. The effect of organometallic complexes of cerium on the crystal growth has been studied. Organocerium complexes predominantly enter the prismatic or pyramidal growth sectors. It is shown that the complex arsenazo III + Ce blocks the growth of the prismatic sector. Cerium-doped KDP crystals exhibit a photoluminescence band peaking at the wavelength λ_max= 350 nm.     

Perfection and homogeneity of space-grown GaSb:Te crystals

A Te-doped GaSb crystal grown by the method of directed crystallization under microgravitation has been studied by X-ray topography. It is shown that the structural perfection of the crystal part grown without contact with the ampule walls is substantially higher than the structural perfection of the crystals grown under terrestrial conditions. The distribution of a Te dopant in the crystal is studied by quantitative X-ray topography, and it is shown that, if the gap between the growing crystal and the ampule is small, the Marangoni convection in the melt can be less intense than the convection provided by residual microgravitation. The relation between the formation of a flat face on the crystallization front (faceting) and the formation of twins is also established.     

On facets existed on concave interfaces in Czochralski-grown GaSb crystals

It is tried to make facet regions grow on interfaces curved concavely toward the melt using the Czochralski method. By increasing rapidly the pulling rate of crystals, the whole growth interface is once remelted and a concave interface is formed in the following growth process. A facet region occurs from a (¯I¯I¯I) plane which appears by the remelt of interfaces. This facet continues to grow while it is being surrounded by concave interfaces of nonfacet regions. From the microscopic measurement of spreading resistance. the impurity concentration is higher in the facet region than in non-facet ones. This suggests that the growth mechanism of the facet on concave interfaces is the same as that on convex ones.     

Ain single crystals

Single crystals of aluminum nitride up to 1 cm long and 0.3 in diameter have been grown by a sublimation-recondensation technique at about 2250°C. The starting material is prepared by the direct reaction of aluminum and nitrogen at 1850°C. The crystals are grown at a rate of 0.03 cm/hr. in sealed tungsten crucibes in an rf heated tungsten furnace. They are amber in color and have the wurtzite structure.     

Compositional mapping of GaSb wafers from as-grown crystals and after post-growth annealing treatments

Spatial compositional analysis has been carried out on single and polycrystal wafers of GaSb grown from stoichiometric and non-stoichiometric melts. In crystals grown from stoichiometric melt, the ratio of Ga to Sb is slightly more and remains uniform throughout. At the grain boundaries in polycrystals, the Sb content is more than in the other regions of the crystal. Crystals grown from either Ga- or Sb-rich melts exhibit inclusions of the excess component. Post-growth annealing treatments in vacuum and Ga-rich atmospheres have been performed. Heat treatments in vacuum atmosphere produce very little effect on the local composition of the crystal. On the other hand, localized crystallization at grain boundaries and inclusions takes place in the presence of excess gallium. It has been shown that annealing treatments in Ga ambient can produce defect-free wafers with extremely homogeneous composition. It is concluded that the excess Sb which is liberated from the crystal during growth resides at the grain boundaries and other extended defect centers. The vacant Sb sites are then responsible for the formation of the native acceptor centers like V_Ga and Ga_Sb.     

Switching effect with memory in thallium sulfide single crystals

Thallium monosulfide single crystals have been grown and thin platelet specimens were prepared. The switching characteristics of TIS were studied in detail. Switching effect with memory was observed and reported for the first time. The influence of different variables such as temperature, light illumination, and sample thickness on the switching behaviour is considered. The obtained results are discussed.     

Growth of Sb-Bi gradient single crystals

The growth conditions and structural quality of Sb-Bi gradient single crystals with Bi content from 2 to 18 at %, grown by the Czochralski method with solid phase feed, are investigated. Bi distribution in the crystals along their pulling direction are studied by electron probe microanalysis and the change in the interplanar spacing is analyzed by double-crystal X-ray diffraction. It is established that the pulling rate and feed mass affect the Bi distribution in Sb-Bi single crystals.     

Thermal stability of zincite single crystals

The effect of temperature on the stability of synthetic ZnO crystals in neutral (N₂), oxidative (O₂), and reductive (95% Ar-5% H₂) media and in a low vacuum has been studied. In the first and second cases, zincite does not undergo changes up to 1000°C. After an 8-h exposure in oxygen at 1100°C, a decrease in the size of hexagonal growth hillocks on the monohedron face (0001) and smoothing of its relief on the whole have been observed. In the presence of hydrogen, etching traces manifest themselves on the crystal surface even at 760°C; further heating leads to their sublimation. The effect of annealing on the luminescence properties of zincite has been demonstrated.     

Preferred growth of bismuth single crystals

The results of the study of the factors influencing the orientation of the ( 111 ) cleavage plane of bismuth are presented. It has been observed that at high purity the growth rates and temperature gradients do influence the orientation whereas at low purities no such influence is observed.     

Low-temperature dehydration of gypsum single crystals

On the basis of the analysis of the electron spin resonance spectrum of the SO ₃ ^? radical ion, it is established that the transformation of gypsum (CaSO₄ · 2H₂O) into bassanite (CaSO₄ · 0.5H₂O) with partial removal of water molecules occurs through the formation of an anhydrous metastable phase. This phenomenon, reflecting the processes of recrystallization of materials of this class, serves as the scientific basis for the production of binders from sulfate mineral associations.     

Growth of single crystals of quasicrystalline phases

To study the mechanical and physical properties of quasicrystals, single-crystal samples of large size (several centimeters) are necessary. However, obtainment of such single crystals meets a number of difficulties related to the peritectic character of melting of quasicrystalline compounds, high volatility and oxidizability of the initial components, low growth rate in aperiodic directions, and metastability of the most quasicrystalline structures. In this study, criteria for stable growth of quasicrystalline phases have been determined. The growth mechanisms of icosahedral and decahedral single crystals are described and experimental techniques of single-crystal growth are reviewed.     

Impact damage in MgO single crystals

Optical absorption has been used to study the impact damage in MgO and MgO:Li single crystals. The results are similar to that obtained in compressed crystals, except in MgO:Li with stable Li° defects, in which the impacts do not produce an increase of the 5.7 eV absorption band.