Influence of proton implantation on the properties of CuInSe2 single crystals (II)

Copper deficient p-type conducting CuInSe₂ single crystals were implanted with 40 keV protons in the fluence range from 2.5 · 10¹⁴ to 1.5 · 10¹⁶ cm⁻². Over the whole fluence range the implanted layers were n-type conducting which is ascribed to passivation of the acceptors due to copper vacancies and formation of donors by hydrogen atoms located at interstitial positions. The thermal stability of the conductivity changes due to proton implantation is limited to temperatures below 100 °C.     

Comparative optical absorption and photoreflectance study of n-type CuInSe2 single crystals

Optical absorption spectra in the photon energy range from 0.4 to 1.2 eV and photoreflectance spectra in the range of the fundamental edge are measured on n-type CuInSe₂ single crystals. Photoreflectance spectroscopy yields the true gap energy while the near-edge absorption spectra are dominated by acceptor–to–conduction band transitions, the acceptor ionisation energy being about 80 meV. Based on intrinsic defect chemistry considerations this acceptor is ascribed to copper vacencies.     

Influence of proton implantation on the properties of CuInSe2 single crystals (I). Ion channeling study of lattice damage

The lattice damage of p-type CuInSe₂ single crystals implanted with 10 keV protons in the fluence range from 2.5 · 10¹⁴ to 8 · 10¹⁵ cm⁻² was investigated using the Rutherford backscattering/channeling technique. At proton fluences up to about 2 · 10¹⁵ cm⁻² radiation annealing of the defects is observed which is ascribed to very high defect concentrations in the unimplanted samples. At higher fluences radiation damage occurs but the concentration of radiation induced defects ramains low. There are indications that selenium interstitials or defect complexes with selenium interstitials involved are stable defects at room temperature.     

Effect of indium intercalation on various properties of MoSe2 single crystals

Indium intercalated MoSe₂ single crystals i.e. In_xMoSe₂ (0 ≤ x ≤ 1) are grown by direct vapour transport technique. These crystals are structurally characterized by X‐ray diffraction, by determining their lattice parameters ‘a’ and ‘c’ and X‐ray density. The Hall effect and thermoelectric power measurements shows that In_xMoSe₂ (0 ≤ x ≤ 1) are p‐type in nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of the defect structure character in calcite single crystals on X-ray diffraction

The paper presents experimental results for the dependence of the integral intensity of anomalous transmission T_i and Laue reflection R_i of X-rays on the structural quality of calcite single crystals as obtained by a two-crystal spectrometer. The relation between X-ray dynamic and kinetic scattering as a function of the sample thickness, densities of perfect dislocations in perfect CaCO₃ crystals and of atom-vacancy complexes in calcite crystals with „background”︁ has been found. Distortions due to perfect grown-in dislocations in calcite are shown to exceed those produced in crystals with „background”︁. The latter appear to be more X-ray transparent. A comparison with results of twin layer thickening experiments on CaCO₃ crystals of different qualities again points to the different nature of these distortions. In CaCO₃ crystals with the dislocation density of up to 2 × × 10³ cm⁻², the X-ray scattering, in our experiments, was consistent with the dynamic diffraction theory, while at higher dislocation densities, the X-ray scattering markedly differs from it.     

Electron probe microanalysis of CuInSe2 and CuGaSe2 crystals

A correction procedure for the quantitative electron probe microanalysis of nonstoichiometric crystals in the system CuInSe₂–CuGaSe₂ is presented and applied to the analysis of the terminal members of the mixtures. In CuInSe₂ samples a precipitation of Cu₂Se takes place due to an evaporation of volatile compounds with a composition ratio In: Se = 2:3. A similar reaction was observed in the case of CuGaSe₂.     

The defect structure of ammonium sulphate single crystals

The defect structure of larger ammonium sulphate crystals, grown from aqueous solutions, has been studied by means of X-ray diffraction topography after Lang's method. Several types of dislocations were identified. Moreover it was found that no relationship exists between growth rate and dislocation density, which implies that crystal growth proceeds via two-dimensional nucleation. No difference was found in the defect structure of crystals grown from pure water solutions and from aqueous solutions with 10 – 20% glycerine as additive: In both cases neither growth bands nor sector boundaries were found. On the other hand, crystals grown in aqueous solutions contaminated with Mn²⁺ and Fe³⁺ revealed growth bands and for Fe³⁺ a mosaic-like structure.     

X-Ray study of the defect structure of PbTe single crystals

PbTe single crystals grown by different methods were thinned electrolytically and examined by X-ray transmission topography. The transmission topographs, first obtained of this material, reveal substructure, slip lines and single dislocations. The samples exhibit different structural perfection in dependence on the growth method. In crystals of relatively high perfection, slip lines are the striking feature of defect structure, caused by surface damage during mechanical preparation. The most perfect sample has a dislocation density of 10² to 2 ṁ 10³ cm⁻². No slip occurs, probably due to small dopant contents.     

Modeling of the defect structure in dislocation-free silicon single crystals

A mathematical model of the formation of primary grown-in microdefects on the basis of dissociation diffusion is presented. Cases of “vacancy-oxygen” (V + O) and “carbon-interstitial” (C + I) interaction near the crystallization front are considered for dislocation-free Si single crystals grown by the floating-zone and Czochralski methods. The approximate analytical expressions obtained by setting 1D and 2D temperature fields in a crystal are in good agreement with the heterogeneous mechanism of formation of grown-in microdefects.     

On the influence of nonstoichiometry on luminescent properties of CdGa2S4 single crystals

Results of a study of photoluminescence and thermoluminescence of cadmium thiogallate single crystals grown from the melt are presented. Effect of nonstoichiometry on the properties of samples is studied. Some assumptions about the nature of centres in CdGa₂S₄ compound are made.     

Modeling of defect formation processes in dislocation-free silicon single crystals

A new alternative model of the formation and transformation of grown-in microdefects in dislocation-free silicon single crystals is proposed. The basic concepts of the alternative mathematical model of the formation of secondary grown-in microdefects are considered. It is shown that vacancy micropores are formed in a narrow temperature range of 1130–1070°C. This is caused by a sharp decrease in the concentration of background impurity which does not form agglomerates (they arise in the temperature range of 1420–1150°C upon crystal cooling).     

Thermoelectric properties of indium sesquiselenide single crystals

Single crystals of δ-In₂Se₃ were prepared in the solid state laboratory at Qena-Egypt, by means of Bridgman technique. The temperature dependence of the thermal e.m.f. α in the temperature range from 205 K up to 360 K of In₂Se₃ was studied. The δ-phase In₂Se₃ sample appeared to be n-type. The ratio of the electron and hole mobilities are found to be μ_n/μ_p = 1.378. The effective masses of charge carriers are m = 1.3 × 10⁻³⁰, m = 8.27 × 10⁻³¹ kg for holes and electrons, respectively. The diffusion coefficient was estimated to be D_n = 3.37 cm²/s and D_p = 2.45 cm²/s for both electrons and holes, respectively. The mean free time between collision can be deduced to be τ_n = 70 × 10⁻¹⁶ s and τ_p = 8 × 10⁻¹⁴ s for both electrons and holes. The diffusion length of the electrons and holes are found to be L_n = 1.5 × 10⁻⁷ cm and L_p = 4.4 × 10⁻⁷ cm.     

Effect of ultrasound on the growth of semiconductor single crystals

Crystallography Reports - The influence of ultrasound on striations in InSb, GaAs, and Bi-Sb single crystals grown by the modified Czochralski method was studied. Ultrasonic waves with a frequency...     

Luminescent properties of CsI single crystals grown from the melt treated with EuI2

CsI single crystals treated with EuI₂ as a scavenger are grown and their radioluminescence spectra and scintillation light decay curves are obtained. Addition of the quantities of the scavenger comparable with the total concentration of the oxygen‐containing admixtures in the melt results in complete destruction of the latter. In its turn, this causes the disappearance of the band with a maximum at 2.8 eV in the radioluminescence spectrum and decreases the fraction of the slow 2 µs‐component to 0.01. The addition of larger quantities of EuI₂ leads to the appearance of a wide band with the maximum at 2.8 eV characterized by a decay constant of 2 µs; its intensity increases with the EuI₂ concentration. The maximum ratio of two faster components with the decay constants equal to 7 and 30 ns approaches 0.58:0.41 at EuI₂ concentration in CsI melt equal to 0.01 mol·kg⁻¹.     

Influence of lithium ions on the NLO properties of KDP single crystals

Potassium Dihydrogen Phosphate (KDP) and its isomorphous deuterated form are popular due to their applications in frequency converters and electro‐optic modulation. Different attempts have been made to dope KDP with inorganic additives, organic materials and amino acids. Since many of the metal ions possess more electro negativity which increases the non centrosymmetry, it is of interest to dope them in KDP. The influence of lithium ion (Li⁺) on NLO properties of KDP crystal has been studied in the present investigation. Single crystal of Lithium ion doped Potassium Dihydrogen Phosphate (KDP) was grown by slow evaporation technique. The enhancement in SHG efficiency after addition of ion Lithium (Li⁺) was observed by Kurtz Powder SHG test. It was found that the SHG efficiency of KDP after addition of Lithium ion is 1.33 times more than pure KDP. The crystal structure and cell parameters of grown crystal were determined by X‐ray diffraction. The Energy Dispersive X‐ray analysis (EDAX) gives the chemical composition of grown crystal. The functional groups were identified by FT‐IR spectral analysis. The presence of Lithium in the material of grown crystal was detected by Atomic absorption spectroscopy (AAS). The optical absorption and transmission studies were done by UV‐Visible spectral analysis. The grown crystal was subjected to thermogravimetric analysis (TGA) and Differential Scanning Calorimetry (DSC). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)