Optical fibre modulator based on electrostatic attraction

A fibre-based electrostatic deflector is described that enables modulating the optical signal in fibre systems. A 2.5-cm long fibre length was gold coated and deflected through the application of voltage between the fibre and an external electrode. Static measurements showed that the device is suitable for e-field sensing, and 100% power modulation was obtained for resonant frequencies 1 kHz. A peak voltage as low as 2 V gave a 15% modulation depth with 65 μm diameter fibre, and the maximum frequency measured for a 65 μm fibre was 40 kHz. In a proof-of-principle experiment, a 1.61-μm wavelength Er³⁺/Yb³⁺ fibre laser was Q-switched by placing the electrostatic fibre modulator inside the cavity, generating pulses of 4-μs duration.     

Stimulated Brillouin scattering of Q-switched laser pulses in large-core optical fibres

Q-switched Nd : glass laser pulses of 60 ns duration are transmitted through multimode fused-silica fibres of 0.4–1 mm core diam and lengths of up to 20 m. For laser radiation with narrow spectral width, stimulated Brillouin scattering (SBS) is observed for energies well below the threshold energy of fibre damage. The SBS threshold is shifted beyond the threshold of fibre damage through increasing the spectral width of the laser radiation. The SBS threshold energies of step-index and gradient-index fibres are measured for various fibre and laser parameters.     

Correlation between structural and optical properties of ion beam synthesized β-FeSi2 precipitates in Si

The structural and optical properties of β-FeSi₂ precipitates produced by ion beam synthesis have been investigated by transmission electron microscopy, photoluminescence (PL) analysis and near infrared transmission measurements. The PL spectrum of β-FeSi₂ precipitates in a dislocation free sample has been observed to consist of a sharp line at 1.54 μm and a weak peak at 1.46 μm. Optical transmission measurements showed a direct band gap about 0.8 eV smaller than in continuous β-FeSi₂ film. Calculation of the electronic bands of β-FeSi₂ for different values of the lattice parameters indicates that this reduction can be ascribed to band distortion provided by the lattice strain.     

High power optical fibre delivery system for the laser generation of ultrasound

A plastic-clad optical fibre system has been examined as a delivery system of pulsed laser energy for the generation of ultrasound. The onset of significant optical damage caused by the laser has been investigated. By using multimode fibres of 1 m length with 600 μm core size, it was found that laser power densities from the fibre were sufficient to produce ultrasonic waveforms corresponding to both the thermoelastic and plasma generation regimes. Out-of-plane acoustic displacements of >250 pm can be achieved through 2.5 cm thick aluminium test samples, showing that fibre optical delivery systems may be considered in systems using laser-generated ultrasound for non-destructive testing applications.     

A comprehensive study of the long pulse Nd:YAG laser drilling of multi-layer carbon fibre composites

The results of an extensive experimental study of the free running Nd:YAG laser drilling of a multi-layer carbon fibre composite, where adjacent layers have differently orientated fibres, are reported. For holes drilled with the laser operating in fixed-Q mode at 1064 nm, parallel sections of blind holes illustrating discontinuities in the hole size along a given section direction will be shown to occur at the interface between adjacent layers. An explanation for this effect is proposed. Detailed single pulse drilling characteristics will be presented illustrating the exit hole diameter as a function of pulse energy and material thickness. These characteristics illustrate a ‘stable' drilling regime in which the exit hole diameters are least sensitive to changes in pulse energy or material thickness and a less ‘stable' regime in which they are more strongly dependent on these parameters. Drilling characteristics will be given for two different beam qualities, illustrating the greater drilling depth and reduced hole size achievable with an improved beam quality. Finally holes drilled through a 2 mm thick sample of material with multiple pulses are considered. Size distribution curves for entrance and exit holes will be presented. The total energy required (number of pulses × pulse energy) to drill through 2 mm thick material will be reported as a function of pulse energy in stationary air and argon atmospheres and in a partial vacuum, illustrating a threshold energy which is dependent upon the drilling atmosphere. The threshold energies will be discussed with reference to plasma formation and the reactivity of the drilling atmosphere.     

Raman oscillation with intracavity pumping of a fibre laser

We introduce the concept of cascaded resonant Raman pumping of fibre lasers. The pump scheme utilises the relatively large intracavity Stokes field that is generated within a Raman fibre laser to excite a lanthanide ion that is doped within the core of the fibre providing the Raman gain. In order to illustrate the general characteristics of the pump method and, to establish the design parameters necessary for the realisation of the pump scheme, calculations from a theoretical model that is used to simulate the generation of laser output from a fibre laser that is resonantly pumped with first Stokes radiation is presented. Specifically, the 2.1 μm output from a Ho³⁺-doped silica fibre laser that is pumped with 1.15 μm first Stokes radiation is calculated with the use of a relatively simple numerical model. For a launched pump power of 20 W at 1.07 μm, a fibre laser output of 3 W is predicted for a nominal intrinsic loss of 1.5 dB/km at 2.1 μm, however, this low value of the intrinsic loss at 2.1 μm can be significantly relaxed when the length of the Ho³⁺-doped silica fibre laser resonator is made considerably shorter than the Stokes resonator.     

Annealing effects on structure and laser-induced damage threshold of Ta2O5/SiO2 dielectric mirrors

The effects of annealing on structure and laser-induced damage threshold (LIDT) of Ta₂O₅/SiO₂ dielectric mirrors were investigated. Ta₂O₅/SiO₂ multilayer was prepared by ion beam sputtering (IBS), then annealed in air under the temperature from 100 to 400 °C. Microstructure of the samples was characterized by X-ray diffraction (XRD). Absorption of the multilayer was measured by surface thermal lensing (STL) technique. The laser-induced damage threshold was assessed using 1064 nm free pulsed laser at a pulse length of 220 μs.

It was found that the center wavelength shifted to long wavelength gradually as the annealing temperature increased, and kept its non-crystalline structure even after annealing. The absorbance of the reflectors decreased after annealing. A remarkable increase of the laser-induced damage threshold was found when the annealing temperature was above 250 °C.     

Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors

Significant progresses have been made in the molecular beam epitaxy (MBE) growth of HgCdTe for high performance infrared photon detectors with the aid of in situ and ex situ characterization techniques. Superlattice interfacial layers compensate in part for the influence of non-ideal CdZnTe substrates and hence improved the material quality as well as yield. They result in photoconductive carrier recombination lifetimes approaching theoretical limits set by the intrinsic radiative and Auger recombination mechanisms for 8–14 μm long-wavelength infrared HgCdTe. Very high composition and thickness uniformities have also been achieved. However, the Urbach tail energy, which is associated with structural disorder, was found to be non-uniform for both large wafer (up to 20 × 20 mm²) and very small area (down to 200 × 200 μm²). After several years of improvements in MBE HgCdTe growth techniques, substrates once again have become a bottleneck to further improvements.     

Characterisation of a Nd-doped fibre laser incorporating an etalon formed between the fibre facet and dielectric mirror

Lasing on up to 15 simultaneous wavelengths is demonstrated experimentally with the use of an air-spaced etalon formed between the dichroic mirror and the adjacent fibre facet. A maximum measured frequency shift of 25.4 GHz/μm was observed, and there was only an 11% decrease in the output power at the maximum mirror–fibre separation of 400 μm. A theoretical analysis of the etalon effect in relation to the performance of the fibre laser is also included. The simulation includes the dependence of the effective reflectivity of the mirror and spectral peak spacing on the mirror–fibre separation. The experimental results are consistent with the simulation.     

Photo-operated two-photon absorption effects in the GeSe2–Ga2S3–PbI2 glasses

The possibility to operate the two-photon absorption (TPA) of newly synthesized GeSe₂–Ga₂S₃–PbI₂ glasses using the CO laser beam (λ=5.5 μm) as a photoinducing one has been demonstrated. As the fundamental laser beam we have used the illumination of 10.6 μm passively modulated 0.5 ns CO₂ laser with a rate repetition of about 10 Hz. We have established that the maximal photoinduced TPA is observed for the 8% doped samples (up to 14 cm/GW), which is achieved at a pump CO laser pump power density equal to about 0.6 GW/cm². The undoped PbI₂ samples show the TPA maximum at a pump power density of about 0.2 cm/GW. The minimal TPA values were observed for the samples with 5% of PbI₂. The obtained results show that these materials can be used as effective optically operated optical limiters.     

Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (1 0 0) InAlAs/InP substrates

Self-assembled InAs quantum dots (QDs) on In_0.52Al_0.48As layer lattice matched to (1 0 0) InP substrates have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL). TEM observations indicate that defect-free InAs QDs can be grown to obtain emissions over the technologically important 1.3–1.55 μm region. The PL peak positions for the QDs shift to low energy as the InAs coverage increases, corresponding to increase in QD size. The room temperature PL peak at 1.58 μm was observed from defect-free InAs QDs with average dot height of 3.6 nm.     

Broad band infrared near-field spectroscopy at finger print region using SPring-8

The authors report infrared near-field spectroscopy using synchrotron radiation at BL43IR, SPring-8 in the finger print region. At the microspectroscopy station, the infrared synchrotron radiation beam is focused on a cantilever probe with a 3 μm square aperture. A comb-shaped Au electrode with the width of 3 μm and the distance of 3 μm is used for the reflection measurement. The Au electrodes can be resolved at 650 cm⁻¹ and the resolution is estimated to be λ/5.     

Effect of heat-pretreatment of the graphite rod on the quality of SWCNTs by arc discharge

Single-walled carbon nanotubes (SWCNTs) have been synthesized in high yield by the dc arc discharge technique under heat-pretreatment of the graphite rod conditions. Before executing arc discharge, the graphite rods containing the catalysts were heat treated at 600, 700, 800 and 900 °C for 1–3 h, respectively. Effects of heat-pretreatment of the graphite rod on the quality of SWCNTs by arc discharge were investigated. The heat-treatment temperature and time were found to be crucial for a high yield of high-purity SWCNTs. Optimum parameter was found to be at the heat-treatment temperature of 800 °C for 2 h. The SWCNTs synthesized under the optimum condition have better field-emission characteristics. The turn-on field needed to produce a current density of 10 μA/cm² is found to be 1.9 V/μm and the threshold field where current density reaches 10 mA/cm² is 3.9 V/μm.     

Picosecond nonlinear optical response of Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition

Well-crystallized Ba_0.5Sr_0.5TiO₃ thin films with good surface morphology were prepared on MgO(1 0 0) substrates by pulsed laser deposition technique at a deposition temperature of 800 °C under the oxygen pressure of 2 × 10⁻³ Pa. X-ray diffraction and atomic force microscopy were used to characterize the films. The full width at half maximum of the (0 0 2) Ba_0.5Sr_0.5TiO₃ rocking curve and the root-mean-square surface roughness within the 5 μm × 5 μm area were 0.542° and 0.555 nm, respectively. The nonlinear optical properties of the films were determined by a single beam Z-scan method at a wavelength of 532 nm with laser duration of 55 ps. The results show that Ba_0.5Sr_0.5TiO₃ thin films exhibit a fast third-order nonlinear optical response with the nonlinear refractive index and nonlinear absorption coefficient being n₂ = 5.04 × 10⁻⁶ cm²/kW and β = 3.59 × 10⁻⁶ (m/W), respectively.     

Chemical and structural modifications of laser treated iron surfaces: investigation of laser processing parameters

This study focuses on the chemical, morphological and structural characterization of iron surfaces treated by laser in ambient air. Incorporation of nitrogen over a 1–2 μm thickness (10–30 at.% at the profile maximum) and superficial oxidation on 200–400 nm depth have been evidenced by nuclear reaction analyses. X-ray diffraction at grazing incidence has shown the formation of FeO and Fe₃O₄ oxide phases as well as γ-Fe(N), and ε-Fe_xN for a sufficiently high amount of nitrogen incorporated. Treatments performed with different laser beams indicate that the parameter playing the major role in surface modification processes is the wavelength. Nitrogen incorporation has been found to occur via the interaction of reactive N, present in the laser-induced plasma, and the iron molten bath. The nitriding process is promoted in the IR wavelength range. Oxidation takes place by chemical reaction during the cooling step, and is furthered in the case of UV treatment.     

Influence of microsupersonic gas jets on nanosecond laser percussion drilling

This paper reports on etching rates and hole quality for nanosecond laser percussion drilling of 200-μm thick 316L stainless steel performed with micro supersonic gas jets. The assist-gas jets were produced using nozzles of 200, 300 and 500 μm nominal throat diameters. Air and oxygen were used separately for the process gas in the drilling trials and the drilling performance was compared to drilling in ambient conditions. The highest etch rate of 1.2 μm per pulse was obtained in the ambient atmosphere condition, but this was reduced by about 50% with assist-air jets from the 200 μm nozzle. Increasing the jet diameter and/or using oxygen assist gas also decreased the etching rate and increased the hole diameter. The 200 μm nozzle using air-assist jets produced the least amount of recast and gave the best compromise for etching rate. A combination of plasma shielding and different gas dynamic conditions inside the holes and at the surface are correlated to the observations of different drilling rates and hole characteristics.     

Formation of AlxGa1−xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE

A two-dimensional (2D) periodic array having air/semiconductor interfaces can be applied to photonic crystals (PCs), which are expected to control spontaneous emission and optical transports in the next-generation devices. In this paper, we report on the selective area metal-organic vapor phase epitaxial (SA-MOVPE) growth of a Al_xGa_1−xAs 2D periodic array on a GaAs (1 1 1)B substrate for application to 2DPCs having GaAs/AlGaAs heterostructures. Al_xGa_1−xAs (x=0, 0.25 and 0.50) growth was carried out on triangular lattice array of hexagonal GaAs openings and hexagonal SiN_x masks. A uniform Al_0.50Ga_0.50As hexagonal pillar array and a GaAs hexagonal air-hole array with a 1 μm-period were successfully obtained. The important growth parameter for uniform 2DPC structure formation by SA-MOVPE was clarified. Furthermore, we describe the successful demonstration of a 400 nm-period pillar array and an air-hole array, which corresponds to the optical communication wavelength λ=1.3–1.55 μm. The results indicate that SA-MOVPE method is very promising for the formation of uniform semiconductor 2DPCs without the occurrence of process-induced damages.     

MBE grown type-II MWIR and LWIR superlattice photodiodes

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption 2–5 μm and 8–12 μm bands. Recent LWIR devices have produced detectivities as high as 8 × 10¹⁰ Jones with a differential resistance–area product greater than 6 Ohm cm² at 80 K with a long wavelength cutoff of approximately 12 μm. The measured internal quantum efficiency of these front-side illuminated devices is close to 30% in the 10–11 μm range. MWIR devices have produced detectivities as high as 8 × 10¹³ Jones with a differential resistance–area product greater than 3 × 10⁷ Ohm cm² at 80 K with a long wavelength cutoff of approximately 3.7 μm. The measured internal quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2–3 μm range at low temperature and increases to over 60% near room temperature.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.