Influence of Ge and Ag impurities on the thermal conductivity of semiconducting amorphous As2Se3

The thermal conductivity of amorphous semiconducting As₂Se₃ is studied in the temperature range from 100 to 300°K and the influence of germanium and silver impurities is shown. The mean free path of phonons is determined and the observed change of the thermal conductivity is explained by the change of the velocity of sound in amorphous As₂Se₂ containing germanium.Presented by L. toura at the Meeting on Electronic Structure, Optical and Transport Effects in Amorphous and Liquid Semiconductors, Prague, May 1965.The authors are indebted to Dr. J. urek and Ing. I. Turek from the Department of Technical Physics of the College of Transport Engineering in ilina for measuring the velocity of sound in the investigated materials and to Mrs M. Kaparová and J. Trepeová for their help in the experimental work.     

Temperature and pressure dependences of the thermal conductivity of As2(Se1-xTex)3 solid solutions

The effect of temperature and pressure on the thermal conductivity of solid solutions based on the As₂(Se_{1 - x}Te_x)₃ system was investigated in glassy and polycrystalline samples at 273–450 K and hydrostatic pressures of up to 0.35 GPa. The compound As₂Se₃ was studied in a temperature range of 300–760 K. Analysis showed that the short-cange order structure in As₂Se₃ remains unchanged upon the glass—liquid transition right up to 760 K.     

Crystallization kinetics in new Sb14As29Se52Te5 amorphous glass

Differential scanning calorimetry (DSC) under non-isothermal conditions is used to study the crystallization kinetics of Sb₁₄As₂₉Se₅₂Te₅ chalcogenide glass. In addition, two approaches are used to analyze the dependence of glass transition temperature (T_g) on the heating rate (α). One is empirical linear relationship between (T_g) and ln(α). The second approach is the use of straight line vs. 1/T_g for the evaluation of the activation energy for glass transition. The phases at which the alloy crystallizes after the thermal treatment have been identified by using X-ray diffraction. The diffractogram of the transformed material shows the presence of some crystallites of As, Te, AsSb, As₂Se₃, Sb₂Se₃ and AsSe_.5Te_.5 in the residual amorphous matrix.     

Thermal conductivity of GexSb(As)ySe100‐x‐y glasses measured by Raman scattering spectra

We systematically measured thermal conductivity of Ge_xSb(As)₁₀Se_90−x, Ge_xSb₁₅Se_85−x, and Ge_xSb(As)₂₀Se_80−x chalcogenide glasses by measuring their Stokes and anti‐Stokes Raman scattering spectra and estimating the temperature raised by laser irradiation via the ratio of Stoke and anti‐Stokes scattering cross‐section. We aimed at demonstrating the viability of Raman scattering method for thermal conductivity measurements, and understanding the role of chemical composition in determining thermal conductivity of the chalcogenide glasses. We found that, while the values of the thermal conductivity measured in the paper are in a range from ~0.078 to 1.120 Wm^‐1K^‐1 that are in agreement with those reported data in the literatures, thermal conductivity increases before it reaches a maximum at the glass with chemically stoichiometric composition, and then decreases with increasing Ge content. We ascribed the threshold behavior of the thermal conductivity to the demixing of the structural units like GeSe₂, As₂Se₃ and Sb₂Se₃ from the main glass network. The present study demonstrated that Raman scattering method is simple and easy to measure thermal conductivity of the material. Copyright © 2014 John Wiley & Sons, Ltd.     

Exciton Reflection Spectra and the Structure of the Valence Band of Arsenic Chalcogenides

The polarized reflection spectra of arsenic sulfide crystal have been measured with high accuracy. The identical character of the triplet structures of the reflection spectra of As₂S₃ and As₂Se₃ has been established. On the basis of the well-known theoretical calculations of the bands of As₂Se₃, it is suggested that the three uppermost valence bands of both compounds are caused by the p states of arsenic, rather than sulfur, and are split into 0.1 and 0.2 eV. Underneath (about 0.4 eV) there are bands attributable to spin-orbital splitting of the p states of arsenic.     

Amorphous semiconducting AsSeI

It is shown on the basis of differential thermal analysis (DTA) of AsSeI samples that a reliable technique ensuring reproducible preparation of vitreous AsSeI has been found. The values of the softening and melting points are 50 °C and 220 °C, respectively.Transmittance study has been done on glasses of general compositionxAs₂Se₃+(1–x). AsSeI (forx=1.0; 0.8; 0.4; 0.0). Samples in the form of slabs of different thickness (d=0.2; 0.5; 1.0; 2.0 mm) were used to determine the wavelength dependence of the absorption coefficientK. On the basis of the results of the quoted measurements performed on thin As₂Se₃ layers in the high absorption region, the optical gap width of vitreous semiconducting AsSeI has been extrapolated, using certain simplified conceptions mentioned in the paper. The value ofE _g at 293 °K and its temperature dependence coefficient=(E _g/T)_p for AsSeI were found to be 1.91 eV and –6.7×10^–4eV/grad, respectively.     

Energy Spectra of the Local States in the Forbidden Gap of Monoclinic TlInS2xSe2(1?x) Crystals

Near IR properties of the mixed TlInS_2xSe_2(1–x) have been studied previously by the present authors. In this work the temperature and frequency dependence's of the conductivity and the current-voltage characteristics (in relatively weak electric field), have been investigated for monoclinic TlInS_2xSe_2(1–x) crystals, which are perspective materials for IR applications. From the temperature dependence's of conductivity in the direction perpendicular to c- axis the band gap E^g = 2.22 eV was determined for --TlInS₂ crystals. The impurity centres were determined located at 0.43, 0.73 eV and 0.35, 0.48, 1.12 eV for the direction of current i//c and i c, respectively. The concentration of the centres located at 0.48 and 1.12 eV were calculated to be N_A – N_D = 4.8 · 10⁹ cm^–3 and 1.9 · 10¹¹ cm^–3, respectively. It was found that in the solid solutions TlInS_2xSe_2(1–x) for 0.3 x 1, the conductivity follows the dependence (v) = ₀·^s in the temperature range between 100 to 600 K. In the temperature range of 80-400 K charge bounce plays an important role in the conductivity mechanism. Occurrence of the deep and low-levels impurity centres and a tail of the density of energy states in TlInS_2xSe_2(1–x) crystals make them perspective for practical applications: switching and memory effects, N-type current-voltage characteristics, induced conductivity etc.     

Photoacoustic spectroscopy of thin films of As<Subscript>2</Subscript>S<Subscript>3</Subscript>, As<Subscript>2</Subscript>Se<Subscript>3</Subscript> and GeSe<Subscript>2</Subscript>

Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As₂S₃, As₂Se₃ and GeSe₂ exhibit a wide variety of photo-induced phenomena that enable them to be used as optical imaging or storage medium and various electronic devices, including electro-optic information storage devices and optical mass memories. Therefore, accurate measurement of thermal properties of semiconducting films is necessary to study the memory density. The thermal conductivity of thin films of As₂S₃ (thickness 100 μm and 80 μm), As₂Se₃ (thickness 100 μm and 80 μm) and GeSe₂ (thickness 120 μm and 100 μm) has been measured using PAS technique. Our result shows that the thermal conductivity of thicker films is larger than the thinner films. This can be explained by the thermal resistance effect between the film and the surface of the substrate.      

Effect of nonlinear refraction and two-photon absorption on the optical limiting in amorphous chalcogenide films

This paper reports on the results of investigations into the nonlinear optical characteristics of chalcogenide films (As₂S₃, As₂₀S₈₀, 2As₂S₃/As₂Se₃, 3As₂S₃/As₂Se₃). The nonlinear refractive indices and two-photon absorption coefficients for these films are measured using the Z-scan technique at wavelengths of a picosecond Nd: YAG laser (λ=1064 and 532 nm). The optical limiting due to Kerr-type nonlinearities is analyzed.     

Electrical and thermal properties of chalcogenide glass system Se75Ge25−x Sb x

The dc and thermal conductivities of five different compositions of the chalcogenide glass system Se₇₅Ge_25–x Sb _x have been studied in a temperature range below T _g. The dc conductivity results indicate that each composition has a single activation energy in the considered temperature range. The coefficient of thermal conductivity increased linearly with temperature below T _g for the compositions investigated. The increase of Sb content in the chalcogenide glass system leads to an increased coefficient of electrical conductivity , an increased coefficient of thermal conductivity , and to a decreased activation energy E and pre-exponential factor ₀. The observed compositional dependencies of and E have been correlated with the increase of weak bond density and the decrease of covalent bond density in the structure of the compositions investigated with increasing Sb content at the expense of Ge content. The decrease in ₀ and the increase in has been, respectively, correlated with the decrease in mobility and the increase in phonon velocity.     

A.C. conductivity of bulk glassy chalcogenides

The a.c. conductivity of amorphous Se, Se₉₀Ge₁₀, Se₇₅Ge₂₅, As₂Se₃, As₂S₃, and As₄₅Te₄₀Ge₁₅ has been measured at room temperature in the 20 MHz–35 GHz range. The results display a contact effect we explicit. For the six materials, the conductivity is roughly proportional to ω^s with $\text{s}{}^{\mathrm{\approx }}\text{1}$ up to the microwave region (no saturation is observed). The experimental results are analysed with regard to the electronic and the atomic contributions but a better estimate of some parameters is necessary to confirm any model.     

The temperature dependence of the conductivity and thermal emf due to multiphonon hopping in disordered semiconductors

Using transport theory, we studied the temperature dependence of the static conductivity and of the thermal emf due to multiphonon hopping in disordered semiconductors. In the low-temperature region when T < _m ( _m is the maximum phonon frequency), the temperature dependences of the conductivity and the thermal emf are the same as when single-phonon hopping is dominant. At higher temperatures (T _m), the hopping conductivity and thermal emf are characterized by a slower dependence on reciprocal temperature than in the low-temperature region.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No.2, pp.42–47, February, 1976.The author is to V. L. Bonch-Bruevich and A. G. Mironov for discussing this work.     

Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs

The incorporation of Sn as a dopant in GaAs has been studied in the temperature range of 500°–650° C, over a wide range of Ga and As fluxes, the latter being incident as either As₄ or As₂ molecules. The results are explained in terms of a surface segregation model in which the behaviour at high growth temperatures (above 600 °C) approaches thermal equilibrium, but growth at lower temperatures involves a kinetic limitation to the segregation process.     

Thermal conductivity of the Nb3Ge layer prepared by the continuous deposition method

The paper describes the measurement of thermal conductivity of the stainless steel tape on which the superconductive Nb₃Ge layer was vapour-deposited on both sides by the continuous method. The stainless steel 50 m substrate covered by the 2 m Nb layer was deposited with the layer of Nb₃Ge of the thickness of 10 m. Thermal conductivity in the temperature range within 5 up to 80 K was measured in lengthwise direction using the thermopotentiometric method in the bath cryostat. In the same experimental arrangement the measurement of thermal conductivity of the substrate and of the tape with the deposited layer of Nb₃Ge was performed. Specific thermal conductivity of the Nb₃Ge layer was calculated on the basis of measured values.     

Investigation of the optical properties of In2Se3xTe3(1−x) single crystals

In [1] it was shown that when In₂Te₃ interacts with In₂Se₃ in samples which are mainly indium telluride, substitutional solid solutions having the zinc blende structure are formed in the concentration range 0–40 mol.% In₂Se₃ (0 x 0.4). The solubility of the low temperature hexagonal modification-In₂Se₃ did not exceed 2 mol.%; formation of solid solutions having the medium temperature hexagonal modification of-In₂Se₃ was observed for the interval 0.9 x 0.95. These published data [2, 3] are concerned with electrical properties of the crystals. In this paper the results of an investigation of the optical properties of In₂Se_3xTe_3(1–x) single crystals for temperatures between 300 and 77°K are presented. Crystals suitable for optical measurements were obtained by a modified Bridgman method, which included vibarational mixing. All the samples were n-type. The resistivity varied from 10⁶ to 10⁴ ohm · cm in the course of the transition from-In₂Te₃ to the solid solutions (0 x 0.4).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 65–68, May, 1972.     

The thermal activation energy of crystalline As2Se3

The conductivity of As₂Se₃ single crystals has been measured, both 6 b and ⊥ b, in the temperature range 300–400°K. Thermal activation energies of 0.94 and 1.1 eV were obtained for H₂ and I₂-grown crystals, respectively.     

Effect of age in vitreous As2Se3 thin films

In this paper are reported the studies of structural changes developed in the photoconductivity response spectrum of amorphous As₂Se₃ thin films with their age. Thin films were prepared by the thermal evaporation of amorphous As₂Se₃. Also reported are the X-ray diffraction studies. An explanation of the phenomenon in terms of structural changes has been attempted.     

Optical,photoelectric and electric properties of single-crystalline Sb2Se3

Measurements of absorption coefficient in the region of the absorption edge, of spectral distribution of photoconductivity and dependence of electrical conductivity upon temperature on Sb₂Se₃ single crystals are given. The absorption of light was proved to correspond to indirect forbidden transitions. The value of optical gapE _g ^opt =(1·11±0·02) eV forE a andE c was determined. From photoconductivity and conductivity measurements the values of the gaps areE _g ^opt =1·11 eV andE _g ^el =1·04 eV. The anisotropy of the electrical conductivity parallel and perpendicular to the cleavage plane is 2·2.     

The susceptibility of selenides and tellurides of heavy elements

The results of measuring the temperature dependence of the susceptibility (T) of samples of PbSe, Sb₂Se₃, Sb₂Te₃, Bi₂Se₃ and Bi₂Te₃ are given and the measured curves explained. The connection between the molar susceptibility of the characteristic crystal lattice of these semiconductors and the total number of electrons in their molecules is pointed out.     

A study of the photoluminescence of crystals of the hexagonal modification of Β-Ga2As3

The excitation and radiation spectra of-Ga₂As₃ crystals have been studied. The radiation spectrum consists of two overlapping bands (1.44 and 1.61 eV) and a very weak band in the 2.8–2.9 eV region. The temperature dependence of the halfwidth of the luminescence bands was studied and the position of the levels responsible for the luminescence were determined: E_1,v = 0.84 eV and E_2,v = 0.59 eV. These luminescence bands in -Ga₂As₃ crystals undergo thermal quenching. The kinetics of the photoconductivity and the photoluminescence were studied and it was shown that the recombination of nonequilibrium carriers occurs by two channels: via fast s levels and slow r levels, the trapping cross section of the latter being .Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 72–75, September, 1972.