光电化学刻蚀n^＋—Si的电致发光

ｎ＋－Ｓｉ在ＨＦ水溶液中经光电化学刻蚀形成的微米级多孔硅（ＰＳ）具有较好的电致发光（ＥＬ）性能，其发光光谱的波长范围约在５００～８００ｎｍ之间，阴极ＥＬ的波长和强度均随调制电位可逆变化；在酸性溶液中，发光强度较大，光淬灭过程也较中性溶液为慢．与ｎ－－Ｓｉ的结果类似，ＰＳ的制备电位也决定性地影响着ＥＬ的强度．光淬灭前的伏安行为表明，除Ｓ２Ｏ２－３和Ｈ＋还原外，可能还涉及ＰＳ表面化合物的转化．对能带图进行了讨论．     

Phase range of the type-I clathrate Sr8Al(x)Si(46-x) and crystal structure of Sr8Al10Si36

Samples of the type-I clathrate Sr(8)Al(x)Si(46-x) have been prepared by direct reaction of the elements. The type-I clathrate structure (cubic space group Pm3n) which has an Al-Si framework with Sr(2+) guest atoms forms with a narrow composition range of 9.54(6) ≤ x ≤ 10.30(8). Single crystals with composition A(8)Al(10)Si(36) (A = Sr, Ba) have been synthesized. Differential scanning calorimetry (DSC) measurements provide evidence for a peritectic reaction and melting point at ～1268 and ～1421 K for Sr(8)Al(10)Si(36) and Ba(8)Al(10)Si(36), respectively. Comparison of the structures reveals a strong correlation between the 24k-24k framework sites distances and the size of the guest cation. Electronic structure calculation and bonding analysis were carried out for the ordered models with the compositions A(8)Al(6)Si(40) (6c site occupied completely by Al) and A(8)Al(16)Si(30) (16i site occupied completely with Al). Analysis of the distribution of the electron localizability indicator (ELI) confirms that the Si-Si bonds are covalent, the Al-Si bonds are polar covalent, and the guest and the framework bonds are ionic in nature. The Sr(8)Al(6)Si(40) phase has a very small band gap that is closed upon additional Al, as observed in Sr(8)Al(16)Si(30). An explanation for the absence of a semiconducting "Sr(8)Al(16)Si(30)" phase is suggested in light of these findings.     

Li2B12Si2: the first ternary compound in the system Li/B/Si: synthesis, crystal structure, hardness, spectroscopic investigations, and electronic structure

We present the synthesis, crystal structure, hardness, IR/Raman and UV/Vis spectra, and FP-LAPW calculations of the electronic structure of Li(2)B(12)Si(2), the first ternary compound in the system Li/B/Si. Yellow, transparent single crystals were synthesized from the elements in tin as solvent at 1500 degrees C in h-BN crucibles in arc-welded Ta ampoules. Li(2)B(12)Si(2) crystallizes orthorhombic in the space group Cmce (no. 64) with a=6.1060(6), b=10.9794(14), c=8.4050(8) A, and Z=4. The crystal structure is characterized by a covalent network of B(12) icosahedra connected by Si atoms and Li atoms located in interstitial spaces. The structure is closely related to that of MgB(12)Si(2) and fulfils the electron-counting rules of Wade and Longuet-Higgins. Measurements of Vickers (H(V)=20.3 GPa) and Knoop microhardness (H(K)=20.4 GPa) revealed that Li(2)B(12)Si(2) is a hard material. The band gap was determined experimentally and calculated by theoretical means. UV/Vis spectra revealed a band gap of 2.27 eV, with which the calculated value of 2.1 eV agrees well. The IR and Raman spectra show the expected oscillations of icosahedral networks. Theoretical investigations of bonding in this structure were carried out with the FP-LAPW method. The results confirm the applicability of simple electron-counting rules and enable some structural specialties to be explained in more detail.     

Time-resolved photoluminescence spectra of Si species encapsulated in zeolite supercages

Photoluminescence (PL) spectra of Si species encapsulated in zeolite supercages are studied. It is reported that the chained Si species terminated partially with phenyl groups and with some unsaturated bonds are formed in zeolite supercages by the reaction with phenylsilane and they show PL around 4 eV (J. Phys. Chem. 2004, 108, 2501-2508). In the present paper they are reduced with hydrogen to prepare Si chained species terminated and saturated with hydrogen atoms. The PL spectra are deconvoluted to be four components at 1.9, 2.2, 2.6, and 3.7 eV, which can tentatively be assigned to Si nanocrystals and Si quantum wires in addition to defects in SiO2 and uncontrolled organic impurities in zeolite, respectively. At elevated temperatures the Si quantum wires in zeolite pores seem to change the Si nanocrystals with the size larger than that of the zeolite pore diameter. It is the first case in which the PL decay lifetime of oxygen vacancies in zeolite can be detected to be quite short to be about 16 ns. The detected lifetimes of Si quantum wires are significantly very short, about 12 ns. The Si species encapsulated zeolite is solvated with hydrofluoric acid solution to separate the Si quantum wires by dissolving zeolite lattice. The Si quantum wires in the HF solution show intense PL spectra peaked at 2.33 eV and broad UV spectra around 2.8-3.5 eV. They will have different shapes and lengths. The HF solvated zeolite shows still PL spectra characteristic of oxygen vacancies and the absorption edge at 3.6 eV. The result means that zeolite lattice is solvated in HF solution as clusters with a band gap of 3.6 eV and they can still have some oxygen vacancies. Oxygen vacancies situate about 1.0 eV below the zeolite conduction band minimum, and the absorbed energy can be dissipated as PL between the valence band maximum and the oxygen vacancies. It is concluded that the excitation photon energy can be absorbed in zeolite and the Si quantum wires and then the absorbed energies are competitively relaxed in zeolite and the Si quantum wires.     

异质富勒烯C~5~9Si与C~6~9Si的理论研究

利用MNDO,AM1和PM3半经验量子化学计算方法对硅杂富勒烯C~5~9Si和C~6~9Si进行了系统的理论研究.计算了稳定构型、生成热、前沿轨道能级差、电离势、电子亲和势、绝对电负性和整体硬度.结果表明,硅杂富勒烯的稳定性虽然低于全碳富勒烯,但也具有相当的稳定性.C~5~9Si的稳定性比已经合成的C~5~8X~2(X=B,N)高,C~6~9Si与C~7~0的稳定性差异也很小,因此在适宜条件下文中所讨论的硅杂富勒烯是应该能够合成的.在C~6~9Si各异构体中,取代位置在赤道的异构体具有最低的能量和最大的前沿轨道能级差,也是最稳定的异构体.与全碳勒烯C~6~0和C~7~0相比,C~5~9Si和C~6~9Si具有较小的电离势和电子亲和势,表明硅杂富勒烯容易被氧化,而被还原的难度要些,但是仍容易发生还原反应而生成负离子.因此硅原子的掺杂能够使富勒烯的氧化还原性能得以改善.C~5~9Si和C~6~9Si更容易与亲电试剂反应,而发生亲核反应的活性要相对小一些.硅杂富勒烯C~5~9Si和C~6~9Si的绝对电负性和硬度都小于相对应的全碳富勒烯,对电子的束缚力要相对小一些。     

Si(CH3)2Cl2分子的电离电势和化学键能的测定

有机硅化合物是半导体工业中产生硅元件的基本原料和有机合成中的重要试剂，是多年来大家研究较多的分子体系之一．本文报导了用同步辐射加速器产生的真空紫外光，电离St（CH3hCI。分子．在50－120n－m波长范围内，测量了各种离子产物与真空紫外光波长的关系，推算得它的绝热电离电势和离子中几个化学键的键能．1实验装置和方法本工作在国家同步辐射实验室光化学实验站进行．进行分子真空紫外光电离研究的实验系统已在文献山中详细描述．同步辐射加速器产生的真空紫外光波长用Ne气的电离势标定，其误差＜士0－Inln．单色仪的分辨率为河凸…     

C59Si on the monohydride Si(100):H-(2 x 1) surface

We propose the use of the Si atom in the experimentally observed C59Si molecule as a possible way to controllably anchor fullerene molecules on a Si surface, due to the formation of a strong bond to one of the Si surface atoms. All our results are based on ab initio total energy density functional theory, and we obtain that the binding energy is on the order of 2.1 eV, approximately 1.4 eV more stable than a C60 bonded in a similar situation. A possible route to obtain such adsorption via a (C59Si)2 dimer is examined, and we find the whole process to be exothermic by approximately 0.2 eV.     

A Gaussian-3 theoretical study of small silicon-lithium clusters: electronic structures and electron affinities of SinLi(-) (n = 2-8)

The molecular structures of neutral Si n Li ( n = 2-8) species and their anions have been studied by means of the higher level of the Gaussian-3 (G3) techniques. The lowest energy structures of these clusters have been reported. The ground-state structures of neutral clusters are "attaching structures", in which the Li atom is bound to Si n clusters. The ground-state geometries of anions, however, are "substitutional structures", which is derived from Si n+1 by replacing a Si atom with a Li (-). The electron affinities of Si n Li and Si n have been presented. The theoretical electron affinities of Si n are in good agreement with the experiment data. The reliable electron affinities of Si n Li are predicted to be 1.87 eV for Si 2Li, 2.06 eV for Si 3Li, 2.01 eV for Si 4Li, 2.61 eV for Si 5Li, 2.36 eV for Si 6Li, 2.21 eV for Si 7Li, and 3.18 eV for Si 8Li. The dissociation energies of Li atom from the lowest energy structures of Si n Li and Si atom from Si n clusters have also been estimated respectively to examine relative stabilities.     

Metal-substituted Ti8C12 metallocarbohedrynes: toward less reactive clusters as building blocks of cluster-assembled materials

To form cluster-assembled materials, the clusters should have low reactivity and be characterized by a closed-shell electronic configuration with a large gap between the highest occupied and the lowest unoccupied molecular orbitals (HOMO-LUMO). Using spin-polarized density functional theory calculations, we investigate the M-substituted Ti(8)C(12) metallocarbohedrynes to search for less reactive clusters as building blocks for cluster-assembled materials (M = Be, Mg, Ca, Sr, Ba and Sc, Y). The selected atoms in the correct stoichiometry would produce a metallocarbohedryne that is isoelectronic with the Ti(8)C(12)(2+), which has a closed-shell electronic configuration and an enhanced HOMO-LUMO gap of 1.735 eV. According to our results, the HOMO-LUMO gaps of the M-substituted Ti(8)C(12) metallocarbohedrynes are in the range of 0.715-0.979 eV for the case of Be, Mg, Ca, Sr and Ba and in the range of 0.865-1.294 eV for the case of Sc and Y. Among all the M-substituted metallocarbohedrynes we consider here, one of the isomers of Ti(6)Sc(2)C(12) is not only energetically more favorable but also exhibits a larger HOMO-LUMO gap of 1.294 eV. This result indicates that the Ti(6)Sc(2)C(12)(4) metallocarbohedryne should be less reactive than the Ti(8)C(12) metallocarbohedryne which has a narrow HOMO-LUMO gap of 0.146 eV. Moreover, we show that the intercluster interaction between two individual Ti(6)Sc(2)C(12)(4) metallocarbohedrynes is relatively weak compared to the Ti(8)C(12) dimer.     

Low-energy electron stimulated desorption of neutrals from multilayers of SiCl4 on Si(111)

The interaction of low-energy electrons with multilayers of SiCl(4) adsorbed on Si(111) leads to production and desorption of Cl((2)P(32)), Cl((2)P(12)), Si, and SiCl. Resonant structure in the yield versus incident electron energy (E(i)) between 6 and 12 eV was seen in all neutral channels and assigned to dissociative electron attachment (DEA), unimolecular decay of excited products produced via autodetachment and direct dissociation. These processes yield Cl((2)P(32)) and Cl((2)P(12)) with nonthermal kinetic energies of 425 and 608 meV, respectively. The Cl((2)P(12)) is produced solely at the vacuum surface interface, whereas the formation of Cl((2)P(32)) likely involves subsurface dissociation, off-normal trajectories, and collisions with neighbors. Structure in the Cl((2)P(32)) yield near 14 and 25 eV can originate from excitation of electrons in the 2e, 7t(2) and 6t(2), 6a(1) levels, respectively. Although the 14 eV feature was not present in the Cl((2)P(12)) yield, the broad 25 eV feature, which involves complex Auger filling of holes in the 6t(2) and 6a(1) levels of SiCl(4), is observed. Direct ionization, exciton decay, and DEA from secondary electron scattering all occur at E(i)>14 eV. Si and SiCl were detected via nonresonant ionization of SiCl(x) precursors that are produced via the same states and mechanisms that yield Cl. The Si retains the kinetic energy profile of the desorbed precursors.     

Normal coordinate analysis of H8Si8O12

Normal coordinate analysis of the fundamental vibrations of H₈Si₈O₁₂ has been carried out. Because of the octahedral symmetry, the 78 vibrational degrees of freedom lead to 33 different vibrations, six of which are infrared active, 13 are Raman active and 14 are inactive. From the internal coordinates one gets 116 symmetry coordinates. We describe a straightforward method for determining the internal symmetry coordinates of any molecular system. Internal coordinates, symmetry force constants, the full set of orthonormal symmetry coordinates as well as the 38 redundant orthonormal symmetry coordinates of H₈Si₈O₁₂ are tabulated. The potential energy distribution analysis shows that most of the fundamental vibrations can be very well interpreted in terms of the internal vibrations ν(SiH), ν(SiO), δ(SiH), δ(OSiO) and δ(SiOSi) which makes it easy to compare them with vibrations observed in other silsesquioxanes and similar silicon compounds.     

H8Si8O12和H8Si7TiO12 团簇的几何构型和电子结构的从头算研究

应用HF、 MP2和杂化的B3LYP方法,使用3-21G基组,对H8Si8O12 和H8Si7TiO12团簇的几何构型、总能进行了计算,并在B3LYP/3-21G的水平上对硅原子的核磁共振化学位移进行了研究,得到的几何构型,以及核磁共振化学位移与实验结果进行了比较,发现吻合得很好。计算了H8Si8O12和H8Si7TiO12团簇的Mulliken布居数的大小。并对Si原子被Ti原子取代前后的H8Si8O12体系的几何构型、 Mulliken布居数的变化进行了比较和研究。     

Colloidal Si nanocrystals: a controlled organic-inorganic interface and its implications of color-tuning and chemical design toward sophisticated architectures

The optical use of colloidal silicon nanocrystals (Si NCs) has gained increasing attention for its possible contributions to building a sustainable society that ideally uses resources and energy with high efficiency without causing damage to the environment or human health. Si wafers (E(g) ≈ 1.1 eV) dominate modern microelectronics as an impressive electronic material, but they exhibit relatively poor optical performance owing to an indirect bandgap structure. Interestingly, however, full control of the size distribution and surface chemistry of the NCs yields size-dependent light emission in a very wide range from near-ultraviolet through visible to near-infrared wavelengths. In addition to such unique luminescence properties, Si exhibits a high chemical affinity to covalent linkages with carbon, oxygen, and nitrogen, thereby producing almost unlimited variations in organic-Si NCs architectures hybridized at the molecular level. To achieve this goal, I note some parameters, including interfacial chemistry, that are emerging as important elements for increasing our understanding of the effect of quantum confinement in nanostructured Si and for realizing efficient fluorescence emission. This article covers new aspects of derivatives of Si NCs in applications that utilize their optical absorption and emission features.     

X-ray photoelectron spectroscopic analysis of Si nanoclusters in SiO2 matrix

We investigated silicon nanoclusters Si(nc) in a SiO2 matrix prepared by the plasma-enhanced chemical vapor deposition technique, using X-ray photoelectron spectroscopy (XPS) with external voltage stimuli in both static and pulsed modes. This method enables us to induce an additional charging shift of 0.8 eV between the Si2p peaks of the oxide and the underlying silicon, both in static and time-resolved modes, for a silicon sample containing a 6 nm oxide layer. In the case of the sample containing silicon nanoclusters, both Si2p peaks of Si(nc) and host SiO2 undergo a charging shift that is 1 order of magnitude larger (>15 eV), with no measurable difference between them (i.e., no differential charging between the silicon nanoclusters and the oxide matrix could be detected). By use of a measured Auger parameter, we estimate the relaxation energy of the Si(nc) in the SiO2 matrix as -0.4 eV, which yields a -0.6 eV shift in the binding energy of the Si(nc) with respect to that of bulk Si in the opposite direction of the expected quantum size effect. This must be related to the residual differential charging between the silicon nanoclusters and the oxide host. Therefore, differential charging is still the biggest obstacle for extracting size-dependent binding energy shifts with XPS when one uses the oxide peak as the reference.     

Antiferromagnetic ground state of quantum spins in the synthetic imanite, Ca3Ti2Si3O12: the lost child of the garnet family

Large single crystals of the garnet imanite, Ca(3)Ti(2)Si(3)O(12), were synthesized by a floating zone technique. Near-infrared to visible spectroscopy presents an optical gap of 1.65 eV at 4 K, proving the insulating character of this garnet compound. Electron paramagnetic resonance data indicate that the d(1) electron of Ti(3+) exhibits an orbital contribution to the spin moment (g = 1.859(1)). An antiferromagnetic state is observed below T(N) = 7 K, confirmed by magnetic susceptibility and specific heat data. X-ray diffraction investigations on powders and single crystals of imanite reveal that the crystal structure agrees well with expectations: the cubic symmetry Ia3d describes all obtained single crystal and powder diffraction data.     

Coupled-cluster studies of the electronic excitation spectra of silanes

The electronic excitation spectra of unsubstituted linear silanes (n-Si(m)H(2m+2), m = 1-6), cyclopentasilane (c-Si5H10), and neopentasilane (neo-Si5H12) have been studied at the coupled-cluster approximate singles and doubles (CC2) level using Dunning's quadruple-zeta basis sets augmented with diffuse functions (aug-cc-pVQZ). Comparisons with measured ultraviolet spectra for Si2H6 and n-Si3H8 show that CC2 calculations using these basis sets yield excitation energies in good agreement with experiment. The calculated excitation thresholds for Si2H6 and n-Si3H8 of 7.61 and 6.68 eV are only 0.05 eV larger than the gas-phase values of 7.56 and 6.63 eV, respectively. For n-Si4H10, n-Si5H12, and neo-Si5H12, the calculated excitation thresholds of 6.51, 6.14, and 6.87 eV for the lowest dipole-allowed transitions are about 0.4 eV larger than the corresponding liquid-phase data of 6.05, 5.77, and 6.53 eV; the discrepancy can mainly be attributed to solvent effects. The obtained excitation thresholds for n-Si6H14 is 5.85 eV, whereas no experimental data are available for its optical gap. Calculations using the Karlsruhe triple-zeta valence basis sets augmented with single and double sets of polarization functions show that very large basis sets augmented with diffuse functions are needed for obtaining accurate excitation energies. The optical gaps for silanes obtained using the triple-zeta polarization basis sets were found to be 0.4 and 0.2 eV larger than those obtained using Dunning's quadruple-zeta basis sets. Excitation thresholds calculated at density functional theory levels using generalized gradient approximation are 0.7-1.0 eV smaller than the experimental values and by employing hybrid functionals they are 0.3-0.4 eV below the experimental thresholds. By adding the present basis-set correction and environmental effects to the previously calculated CC2 value for the excitation threshold of the Si29H36 silicon nanocluster, the extrapolated absorption threshold is 4.0 eV as compared to the recently reported experimental value of 3.7 eV.     

Electronic structure and thermochemical properties of silicon-doped lithium clusters Li(n)Si0/+, n = 1-8: new insights on their stability

A theoretical investigation on small silicon-doped lithium clusters Li(n)Si with n = 1-8, in both neutral and cationic states is performed using the high accuracy CCSD(T)/complete basis set (CBS) method. Location of the global minima is carried out using a stochastic search method and the growth pattern of the clusters emerges as follows: (i) the species Li(n)Si with n ≤ 6 are formed by directly binding one Li to a Si of the smaller cluster Li(n-1)Si, (ii) the structures tend to have an as high as possible symmetry and to maximize the coordination number of silicon. The first three-dimensional global minimum is found for Li(4)Si, and (iii) for Li(7)Si and Li(8)Si, the global minima are formed by capping Li atoms on triangular faces of Li(6)Si (O(h)). A maximum coordination number of silicon is found to be 6 for the global minima, and structures with higher coordination of silicon exist but are less stable. Heats of formation at 0 K (Δ(f)H(0)) and 298 K (Δ(f)H(298)), average binding energies (E(b)), adiabatic (AIE) and vertical (VIE) ionization energies, dissociation energies (D(e)), and second-order difference in total energy (Δ(2)E) of the clusters in both neutral and cationic states are calculated from the CCSD(T)/CBS energies and used to evaluate the relative stability of clusters. The species Li(4)Si, Li(6)Si, and Li(5)Si(+) are the more stable systems with large HOMO-LUMO gaps, E(b), and Δ(2)E. Their enhanced stability can be rationalized using a modified phenomenological shell model, which includes the effects of additional factors such as geometrical symmetry and coordination number of the dopant. The new model is subsequently applied with consistency to other impure clusters Li(n)X with X = B, Al, C, Si, Ge, and Sn.     

Si(CH3)3Cl分子电离电势和化学键能的测定

The photoionization spectroscopy of Si(CH3)3Cl in the range of 50 -130 nm was studied with synchrotron radiation source. The adiabatic ionization potentials of molecule Si(CH3)3Cl and radical Si(CH3)3 are 10.06 ±0.02 eV and 7.00±0.03 eV respectively. In addition, the appearance potentials of Si(CH3)2Cl+, Si(CH3)3+, SiCl+ and SiCH3+ were determined:
AP(Si(CH3)2Cl+) ＝10.49±0.02eV, AP(Si(CH3)3+) ＝ 11.91 ±0.02eV
AP(SiCl+) ＝ 18.64 ±0.06eV, AP(SiCH3+)＝ 18.62 ±0.02eV
From these, some chemical bond energies of Si(CH3)3Cl+ were calculated:
D(Si(CH3)2Cl+ - CH3) ＝0.43 ±0.02eV, D(Si(CH3)3+ - Cl) ＝ 1.85 ± 0.02eV
D(SiCH3+ - (2CH3 ＋ Cl)) ＝ 8.56 ± 0．06eV, D(SiCH3+ - 2CH3) ＝6.71±0．06eV
D(SiCl+ - 3CH3) ＝ 8.58 ± 0.06eV, D(SiCl＋- 2CH3) ＝ 8.15 ±0.06eV
D(SiCH3+- (CH3 ＋ Cl)) ＝8.13 ±0.06eV     

First-principle studies of Ca-X (X=Si,Ge,Sn,Pb) intermetallic compounds

The structural properties, elastic properties, heats of formation, electronic structures, and densities of states of 20 intermetallic compounds in the Ca-X (X=Si, Ge, Sn, Pb) systems have been systematically investigated by using first-principle calculations. Our computational results indicated that with increasing atomic weight of X, the bulk modulus of Ca-X intermetallic compounds decreases gradually. It was also found that Ca₃₆Sn₂₃ and CaPb are mechanically unstable phases. Results on the electronic energy band and densities of states also indicated that Ca₃Si₄ is an indirect band gap semiconductor with a band gap of 0.598 eV, and Ca₂Si, Ca₂Ge, Ca₂Sn, and Ca₂Pb are direct band gap semiconductors with band gaps of 0.324, 0.265, 0.06, and 0.07 eV, respectively. In addition, it is found that the absolute values of heats of formation for all Ca-X intermetallics are larger than 30 kJ/mol atom.     

Geometry, chemical bonding, and electronic spectra of Si(n) and Si(n)-glycine (n = 3-5) complexes

Structures and spectra are calculated for Si(n) and Si(n)-Gly (n = 3-5) complexes. Relative stability differences of Gly conformers are magnified by interactions with the Si(n) cluster, so that one conformer of Si(n)-Gly is stabilized. Significant charge transfer occurs from the amino group in Gly to a Si atom in the cluster. Interactions with Gly are predicted to shift the excitation energies of Si(n) significantly to the blue to 2.1-2.7 eV, although they are still lower than in a Si cluster passivated by hydrogen.