氧气流量对射频磁控溅射制备Cu2O薄膜性能的影响

通过磁控溅射方法在玻璃衬底上制备Cu2O薄膜,采用X射线衍射(XRD)、分光光度计、原子力显微镜(AFM)和X射线光电子能谱(XPS)等研究了氧气流量对Cu2O薄膜性能的影响.结果表明:氧气流量为4.2 sccm时,薄膜为单相的Cu2O,具有较高的结晶质量和可见光透过率,光学带隙为2.29 eV,薄膜的导电类型是p型且空穴浓度为2×1016 cm-3.通过XPS能谱分析Cu 2p3/2和O 1s结合能,确定了薄膜中Cu以+1价存在.     

类石墨氮化碳薄膜的电化学沉积

用1:1.5的三聚氯氰和三聚氰胺的饱和乙腈溶液为沉积液,在Si(100)衬底上室温常压下电化学沉积了CNx薄膜.用X射线光电子能谱(XPS)、傅立叶转换红外光谱(FTIR)、X射线衍射图谱(XRD)对沉积的CNx薄膜进行了测试和分析.XRD的衍射峰的结构数据与文献计算的类石墨相氮化碳的结构数据较为吻合.XPS结果表明沉积的薄膜中主要元素为C、N,且N/C=0.81,C1s和N1s的结合能谱中287.84eV的碳和400.00eV的氮是样品中碳氮的主体,以C3N3杂环的形式存在.FTIR光谱中在800cm-1、1310cm-1和1610cm-1的吸收峰也表明薄膜中存在C3N3环,和XPS能谱的分析结果一致.Teter和Hemley预言的g-C3N4在结构形式上和三聚氰胺的完美脱胺缩聚物是一样的,红外光谱和X射线光电子能谱表明在样品中存在三嗪环(C3N3),支持XRD的实验结果.这说明CNx薄膜中有类石墨相的C3N4晶体存在.     

沉积温度对Zn0.95Co0.05O稀磁半导体薄膜结构与磁性的影响

本文利用磁控溅射法在Si(100)衬底上制备了Zn0.95Co0.05O薄膜,考察了沉积温度对Zn0.95Co0.05O样品的结构与磁性的影响.采用XRD、FESEM、XPS和SQUID等方法对样品的结构与磁性进行了表征与分析.XRD结果表明:Zn0.95Co0.05O薄膜样品为纤锌矿结构且具有(002)择优生长,不存在Co和其他杂质相.XPS数据证明:薄膜样品中的Co是以Co2+形式存在,并且Co2+占据ZnO晶格中的Zn原子位.磁滞回线表明:Zn0.95Co0.05O薄膜具有明显的室温铁磁性,随着沉积温度的升高,薄膜的铁磁性逐步减弱.     

ZnSe薄膜的化学反应辅助热壁外延法生长及特性研究

本文通过将新型化学气相反应促进剂Zn(NH4)3Cl5引入到热壁外延系统中,以二元素单质Zn和Se为原料,直接在Si(111)衬底上生长了高质量的ZnSe晶体薄膜,薄膜成分接近理想化学计量比。研究了主要工艺参数对薄膜生长形貌和性能的影响。采用SEM、AFM、EDS和PL谱技术研究了生长的ZnSe薄膜的形貌、成分和发光特性。研究结果表明,热壁温度和生长时间是影响ZnSe薄膜形貌的主要因素;气相反应促进剂在薄膜生长和调节成分方面扮演了关键角色,Zn(NH4)3Cl5的存在使得Zn(g)和Se2(g)合成ZnSe晶体的反应转变为气固非一致反应,从而更容易获得近乎理想化学计量比的ZnSe薄膜。ZnSe薄膜在氦镉激光激发下,室温下PL谱由近带边发射和(VZn-ClSe)组合的SA发光组成,而在飞秒激光激发下,仅在481nm处显示出强烈的双光子发射峰。     

CVD法生长ZnSe的工艺分析

采用单质Se为原料(Zn-Se-H2-Ar体系)来生长CVD ZnSe,初步分析了这种工艺的机理,并详细分析了各种工艺参数对生长ZnSe的影响.这些工艺参数包括沉积腔的温度和压力,Zn坩埚和Se坩埚的温度,各路载流气体的流量.对这些工艺参数进行调整和精确控制,并控制好Zn蒸气和Se蒸气气嘴处的ZnSe生长形态,生长出了质量良好的ZnSe多晶体,透过率超过70;.     

β-Ga2O3体单晶X射线光电子能谱分析

通过对导模法制备的非故意掺杂、Si掺杂β-Ga2 O3晶体和Si掺杂后退火处理的β-Ga2 O3晶体进行了X射线光电子能谱分析(XPS),对比分析不同样品的Ga3d、Ga2p、O1s特征峰位和峰强度变化,并结合文献报道中β-Ga2O3薄膜及单晶材料的报道结果,进一步确认β-Ga2 O3体单晶特征峰峰值.同时,通过对各峰强度的变化进行对比分析,对次峰产生的原因进行推测,获得Si掺杂及退火对晶体表面及晶体内部个特征峰的变化规律.     

XPS研究N-Al共掺p型ZnO薄膜的传导特性

采用螺旋波等离子体辅助射频磁控溅射技术,在α-Al2 O3衬底上制备了N-Al共掺ZnO薄膜样品.Hall测量表明室温下ZnAlO∶N薄膜为n型传导,在O2等离子体气氛中550℃退火后变为p型.p型ZnO薄膜的载流子浓度为2.1×1016 cm-3,霍尔迁移率为5 cm2/V·s.用X射线光电子能谱仪(XPS)对退火前后的ZnO薄膜进行了各元素的化学态分析.XPS结果表明,ZnAlO∶N薄膜中存在两种与N元素有关的缺陷,N原子替代O位形成的(N)o和N分子替代O位形成的(N2)o.退火后ZnAlO∶N薄膜中(N2)o缺陷减少,(N)o缺陷浓度占优导致了薄膜传导类型转变.     

ZnSe微球的制备与性能研究

采用水热法,以ZnSO4·7H2O为Zn源,Na2SeO3为Se源,NaOH溶液为反应介质,N2H4·H2O为还原性助剂,在140℃下反应24 h,合成了直径为1～4μm、分散性较好的ZnSe微球.SEM、XRD和UV-Vis测试发现,NaOH和N2H4·H2O共同控制着ZnSe的形貌,制备的ZnSe微球是由平均尺寸为20.7 nm的ZnSe纳米晶在N2微泡上聚集而成的中空球.     

单质直接气相生长ZnSe单晶

本文直接以高纯Zn、Se单质为原料,加入少量碘单质作为反应输运剂,用化学气相输运(CVT)的方法一步成功的生长出了ZnSe单晶.采用XRD、EDS、紫外可见分光光度计和光致发光(PL)技术研究了生长的ZnSe晶体的结构、成份以及光学特性.结果表明,生长的ZnSe单晶具有较好结晶性能,成份接近理想的化学计量比,在500～2000nm范围内透过率达到65;～70;,在1.9～2.5 eV范围内存在与Zn空位和杂质能级相关的发光带.由Zn和Se单质在输运剂I2的辅助下一步直接生长ZnSe单晶是可行的.     

非晶金刚石薄膜的sp3键成分的XPS谱研究

把非晶金刚石薄膜的XPS C1s谱分解为中心在284.4±0.1eV 和285.2±0.1eV的两个高斯特征峰,分别对应于碳薄膜中的sp2C和sp3C.用这两个高斯特征峰的面积除以C1s谱的总面积,得出非晶金刚石薄膜中sp2C和sp3C的比例.用上述方法对sp3C比例不同的一组样品进行了分析计算,并与先前用紫外-可见光吸收光谱和拉曼光谱对同一组样品分析得出的结果进行了比较,结果表明:用XPS谱能简便而有效地定量确定非晶金刚石薄膜中sp2C和sp3C的比例,且这种方法适用于所有功能碳薄膜.     

单源真空蒸发法制备ZnSe薄膜的实验研究

本文采用单源真空蒸发法制备了ZnSe薄膜,利用电子探针、X射线粉晶衍射等现代测试手段研究了蒸发温度(700～1050 ℃)、基片温度(0～200 ℃)、基片材料(单晶硅、玻璃)以及热处理温度(300～400 ℃)等因素的改变对ZnSe薄膜的成份和结构的影响规律,建立了单源真空蒸发沉积ZnSe薄膜及热处理的实验方法.     

Effect of oxygen content on barrier properties of silicon oxide thin film deposited by dual ion-beam sputtering

A silicon oxide thin film barrier was prepared with various oxygen contents and its chemical composition, surface morphology and optical and barrier properties were related to the deposition conditions used. Our study showed that under Ar and O₂ assisted process conditions, a stoichiometric silicon oxide thin film formed at a critical oxygen content during deposition of 40-50%. The thin films deposited at the critical condition showed the lowest surface roughness giving similar or higher optical transmittance than that of the bare polycarbonate (PC) substrate. The boiling and tensile strength test performed on the thin film deposited with assisted ions before the deposition process showed improvement in the adhesion between the oxide layer and the polymer substrate. In addition, interface modification to improve for improving the barrier layer properties of the silicon oxide thin film was achieved through the introduction of dual ion beam sputtering without pre-treatment.     

Temperature dependent formation of microcrystal and amorphous silicon by vacuum evaporation

In silicon films deposited in vacuum by electron beam evaporation of solid silicon, the substrate temperature dependence of the formation temperature of amorphous silicon and crystalline silicon is determined. On steel and alumina substrates, below 520°C, the silicon film is amorphous. Above this temperature, the film is crystalline with a pronounced optical band gap of 1.7 eV. With thermal treatment in vacuum, a transformation from an amorphous to a crystalline state is observed at 650°C.     

绒面ZnO/Si异质结太阳能电池的初步研究

以p型单晶硅<100>作为衬底材料,通过化学腐蚀法得到硅绒面表面结构,采用喷雾热解法沉积掺Al的ZnO薄膜于绒面硅上,结合微电子光刻、磁控溅射和真空蒸镀等工艺制作上、下表面电极,于400 ℃氮气氛围下快速退火合金,得到Ag/Ti/n-ZnO/p-Si/Al异质结太阳能电池.对电池样品进行了原子力显微镜、霍尔效应测试、X射线衍射谱、电流电压特性等分析.得到电池最佳性能为:开路电压V_(oc)=355 mV,短路电流I_(sc)=36 mA,填充因子FF=0.41,电池效率达到5.2;.绒面异质结构有效降低了电池表面的光反射,相对增加了p-n结的有效面积,电池效率得到一定程度的提高.ZnO与Si界面之间SiO_2层的存在是目前影响电池效率的主要因素.     

基于Si衬底的CdSe薄膜蒸镀工艺研究

采用真空蒸发技术在Si(100)基底上制备了CdSe纳米晶薄膜,利用X射线衍射仪(XRD)、膜厚测试仪、原子力显微镜(AFM)方法对不同蒸发电流下制备的薄膜的结晶情况、表面形貌进行分析表征.结果表明:蒸发电流对CdSe薄膜的结晶性能和表面形貌有显著影响.当蒸发电流为75 A时,CdSe薄膜沿(002)方向的衍射峰相对较强,沿c轴取向择优生长优势明显,薄膜厚度约为160 nm,晶粒尺寸约为40 nm,颗粒均匀;薄膜表面平整光滑,表面粗糙表面粗糙度(5.63 nm)相对较低,薄膜结晶质量较好.     

Effect of substrate temperature on polycrystalline Cd0.9Zn0.1Te thin films studied by Raman scattering spectroscopy

Cd_0.9Zn_0.1Te thin films were prepared by vacuum evaporation onto well‐cleaned glass substrates maintained at 300, 373 and 473 K. X‐ray diffraction studies revealed that the films have zinc blende structure with preferential (111) orientation. Raman peak of the room temperature deposited film appeared at 140.30 cm^‐1 and 159.65 cm^‐1 were for the transverse optic (TO) and longitudinal optic (LO) phonons respectively. The XRD patterns of the higher substrate temperature deposited films exhibited an improvement in the crystallinity of the films. The Raman peak intensity increases and the FWHM decreases for the films deposited at higher substrate temperature. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The heteroepitaxial growth of vacuum-deposited GaP thin films on Si substrates

Heteroepitaxial GaP thin films were grown on (100) and (111)Si substrates by vacuum evaporation of the compound GaP and their structural characteristics were compared with homoepitaxial GaP films grown by the same technique on (100)GaP substrates. Nearly monocrystalline GaP thin films were deposited reproducibly on (100)Si substrates at the optimum substrate temperature of about 680–700°C and the deposition rate of 0.1 nms⁻¹. The structure of such films was comparable in quality to homoepitaxial GaP/GaP films. No monocrystalline films could be deposited on (111)Si substrates.     

热蒸发制备CdSe薄膜及其光电特性研究

采用真空热蒸发法技术制备CdSe薄膜,通过XRD、SEM、Hall效应和分光光度计测试了薄膜的结构、表面形貌、I-V特性和光学透过率。结果表明:CdSe薄膜(100)晶面的面间距为0.369 nm,晶粒大小约为10.2 nm,薄膜表面晶粒分布较为均匀;CdSe薄膜与锡和银的肖特基势垒高度分别为0.76 V和0.69 V;CdSe薄膜的光透过率在远红外区较高,且呈上升趋势;折射率随波长增加按指数规律减小;根据Tauc关系和Urbach规则,获得能量带隙为1.79 eV和Urbach能量为0.217 eV。     

Influence of substrate temperature on microcrystalline structure and optical properties of ZnTe thin films

ZnTe thin films were deposited onto well‐cleaned glass substrates kept at different temperatures (Ts = 303, 373 and 423 K), by vacuum evaporation method under the pressure of 10^–5 Torr. The thickness of the film was measured by quartz crystal monitor and verified by the multiple beam interferometer method. The structural characterization was made using X‐ray diffractometer with filtered CuKα radiation. The grain sizes of the microcrystallines in films increases with increase in substrate temperature. The strain (ε), grain size (D) and dislocation density (δ) was calculated and results are discussed based on substrate temperature. Optical behaviour of the film was analyzed from transmittance spectra in the visible region (400–800 nm). The optical transition in ZnTe films is direct and allowed type. The optical band gap energy shows an inverse dependence on substrate temperature and thickness. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoconduction and transport mechanisms in polycrystalline zincphthalocyanine thin films

Zincphthalocyanine (ZnPc) thin films were prepared by the vacuum evaporation method under a pressure of 10^‐6 mbar. The X‐ray diffraction analysis of vacuum evaporated ZnPc films reveals that the structure of the films is polycrystalline in nature. The photoconduction properties have been studied in the wavelength range 400 –800nm using suitable masks. The Photoconductivity of the films as a function of light intensity and applied voltage were studied and results were discussed in detail. The photoconduction was found to increase with higher light illumination and maximum at the band edge of the ZnPc thin film. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)