Energy gaps,charge distribution and optical properties of AlxIn1−xSb ternary alloys

The electronic and optical properties of Al_xIn_1−xSb ternary alloys have been investigated using a pseudopotential approach within the virtual crystal approximation. The effect of alloy disorder on the studied properties has been examined and found to be weak. The extent of the direct-to-indirect band gap transition is found to occur at x = 0.73. Our results agree well with those reported in the literature. Trends in bonding and ionicity are discussed by means of the electron charge distribution. The present study may be a useful information for mid-infrared inter band cascade lasers applications and other antimonide device structures.     

Determination of the critical indium composition corresponding to the metal–insulator transition in InxGa1−xN (0.06 ⩽ x ⩽ 0.135) layers

The low-temperature conductivity of In_xGa_1−xN alloys (0.06 ⩽ x ⩽ 0.135) is analyzed as a function of indium composition (x). Although our In_xGa_1−xN alloys were on the metallic side of the metal–insulator transition, neither the Kubo-Greenwood nor Born approach were able to describe the transport properties of the In_xGa_1−xN alloys. In addition, all of the In_xGa_1−xN alloys took place below the Ioeffe–Regel regime with their low conductivities. The observed behavior is discussed in the framework of the scaling theory. With decreasing indium composition, a decrease in thermal activation energy is observed. For the metal–insulator transition, the critical indium composition is obtained as x_c = 0.0543 for In_xGa_1−xN alloys.     

Electric property of mixed conductor BaIn1−xCoxO3−δ

We synthesized BaIn_1−xCo_xO_3−δ (x = 0–0.8) with a defective perovskite structure by partly replacing In with Co in Ba₂In₂O₅. Based on XRD measurements, the synthesized compound was found to have cubic perovskite and orthorhombic brownmillerite structures depending on the amount of Co. BaIn_1−xCo_xO_3−δ (x = 0.2 and 0.3) showed high total electrical conductivities without undergoing the structural transformation that the original Ba₂In₂O₅ undergoes. Some of the samples showed both electronic and oxide ionic conductivities. At the same time, the oxide ionic conductivity was comparable with that of Ba₂In₂O₅. For example, the sample with x = 0.1 had a total electrical conductivity of 4.7 × 10^− 1 S cm^− 1 and an oxide ion transport number of 0.52 at 850 °C.     

Synthesis and structural characterization of perovskite type proton conducting BaZr1−xInxO3−δ (0.0 ≤ x ≤ 0.75)

Solid state sintering has been used to prepare the cubic perovskite structured compounds BaZr_1−xIn_xO_3−δ (0.0 ≤ x ≤ 0.75). Analysis of X-ray powder diffraction (XRPD) data reveals that the unit cell parameter, a, increases linearly with an increased Indium concentration. XRPD data was also used to demonstrate the completion of sample hydration, which was reached when the materials showed a set of single-phase Bragg-peaks. Dynamic thermogravimetric analysis (TGA) data showed that approx. 89% of the total number of available oxygen vacancies can be filled in BaZr_1−xIn_xO_3−δ for x = 0.50, and that the maximum water uptake occurs below 300 °C. Rietveld analysis of the room temperature neutron powder diffraction (NPD) data confirmed the average cubic symmetry (space group Pm-3m), and an expansion of the unit cell parameter after the hydration reaction. The strong O–H stretch band, 2500–3500 cm^− 1, in the infrared absorbance spectrum clearly manifests the presence of protons in the hydrated material. Proton conductivity of hydrated BaZr_1−xIn_xO_3−δ, x = 0.75 was investigated during heating and cooling cycles under dry argon atmosphere. The total conductivity during the heating cycle was nearly two orders of magnitude greater than that of cooling cycle at 300 °C, whilst these values were similar at higher temperatures i.e. T > 600 °C.     

Admittance of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates

Metal–insulator–semiconductor structures based on n-Hg_1−xCd_xTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe content were formed on both sides of the epitaxial HgCdTe. Admittance of these structures was studied experimentally in a wide temperature range (8–150) K. It is shown that an increase in the composition of the working layer and a decrease in temperature lead to a decrease in the frequency of transition to high-frequency behavior of the capacitance–voltage characteristics. The differential resistance of space charge region in the strong inversion increases with the composition of the working layer and for x = 0.22 and 0.25, the differential resistance is limited by the Shockley-Read generation. The values of the differential resistance of space charge region at different frequencies and temperatures were found.     

Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As

Au/silicon nitride/In_0.82Al_0.18As metal insulating semiconductor (MIS) capacitors were fabricated and then investigated by capacitance voltage (C–V) test at variable frequencies and temperatures. Two different technologies silicon nitride (SiN_x) films deposited by inductively coupled plasma chemical vapor deposition (“ICPCVD”) and plasma enhanced chemical vapor deposition (“PECVD”) were applied to the MIS capacitors. Fixed charges (N_f), fast (D_it) and slow (N_si) interface states were calculated and analyzed for the different films deposition MIS capacitors. The D_it was calculated to be 4.16 × 10¹³ cm⁻² eV⁻¹ for “ICPCVD” SiN_x MIS capacitors, which was almost the same to that of “PECVD” SiN_x MIS capacitors. The D_it value is obviously higher for the extended wavelength In_xGa_1−xAs (x > 0.53) epitaxial material as a result of lattice mismatch with substrate. Compared to the results of “PECVD” SiN_x MIS capacitors, the N_si was significantly lower and the N_f was slightly lower for “ICPCVD” SiN_x MIS capacitors. X-ray photoelectron spectroscopy (XPS) analysis shows good quality of the “ICPCVD” grown SiN_x. The low temperature deposited SiN_x films grown by “ICPCVD” show better effect on decreasing the dark current of In_xGa_1−xAs photodiodes.     

Distinction investigation of InGaAs photodetectors cutoff at 2.9 μm

Using double heterojunction structure with linearly graded In_xAl_1–xAs as buffer layer and In_0.9Al_0.1As as cap layer, wavelength extended In_0.9Ga_0.1As detectors with cutoff wavelength of 2.88 μm at room temperature have been grown by using gas source molecular beam epitaxy, their characteristics have been investigated in detail and compared with the detectors cutoff at 2.4 μm with similar structure as well as commercial InAs detectors. Typical resistance area product R₀A of the detectors reaches 3.2 Ω cm² at 290 K. Measured peak detectivity reaches 6.6E9 cm Hz^1/2/W at room temperature.     

Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1−xFex)2O3 (0 ⩽ x ⩽ 0.07) magnetic semiconductors

Observation of room temperature ferromagnetism in Fe doped In₂O₃ samples (In_1−xFe_x)₂O₃ (0 ⩽ x ⩽ 0.07) prepared by co-precipitation technique is reported. Lattice parameter obtained from powder X software shows distinct shrinkage of the lattice constant indicating an actual incorporation of Fe ions into the In₂O₃ lattice. X-ray diffraction data measurements show that the entire sample exhibits single phase polycrystalline behavior. SEM micrographs showed the prepared powder was in the range 25–36 nm. SEM EDS mapping showed the presence of Fe and In ions in the Fe doped In₂O₃ sample. The highest remanence magnetization moment (6.624 × 10⁻⁴ emu/g) is reached in the sample with x = 0.03.     

Optical parameters of In–Se and In–Se–Te thin amorphous films prepared by pulsed laser deposition

The thin films of materials based on In–Se are under study for their applicability in photovoltaic devices, solid-state batteries and phase-change memories.The amorphous thin films of In₂Se_3−xTe_x (x=0–1.5) and InSe were prepared by pulsed laser deposition method (PLD) using a KrF excimer laser beam (λ=248 nm, 0.5 J cm⁻²) from polycrystalline bulk targets. The compositions of films verified by energy-dispersive X-ray analysis (EDX) were close to the compositions of targets. The surfaces of PLD films containing small amount of droplets were viewed by optical and scanning electron microscopy (SEM).The optical properties (transmittance and reflectance spectra, spectral dependence of index of refraction, optical gap, single-oscillator energy, dispersion energy, dielectric constant) of the films were determined.The values of index of refraction increased with increasing substitution of Te for Se in In₂Se₃ films, the values of the optical gap decreased with increasing substitution of Te for Se in In₂Se₃ films.     

First principles study of the structure,electronic state and stability of AlnAsm− anions

Structural and electronic properties of semiconductor binary microclusters Al_nAs_m⁻ anions have been investigated using the B3LYP-DFT method in the ranges of n = 1,2 and m = 1–7. Full structural optimization, adiabatic electron affinities calculation and frequency analysis are performed with the basis of 6–311 + G(d). The charged-induced structural changes in these anions have been discussed. The strong As–As bond is also favored over Al–As bonds in the Al_nAs_m⁻ anions in comparison with corresponding neutral cluster. Among different AlAs_m⁻ and Al₂As_m⁻ (m = 1–7) anions, AlAs₄⁻ and Al₂As₃⁻ are most stable.     

Oxygen non-stoichiometry and electrical conductivity of Pr2−xSrxNiO4±δ with x = 0–0.5

Oxygen non-stoichiometry and electrical conductivity of the Pr_2−xSr_xNiO_4±δ series with x = 0.0–0.5 were investigated in Ar/O₂ (pO₂ = 2.5 to 21 000 Pa) within a temperature range of 20–1000 °C. The equilibrium values of oxygen non-stoichiometry and electrical conductivity of these nickelates were determined as functions of temperature and oxygen partial pressure (pO₂). The nickelates with x = 0–0.5 appear to be p-type semiconductors in the investigated temperature and pO₂ ranges. The nickelates with x = 0.3–0.5 show very feebly marked pO₂ dependencies of the conductivity. Pr_1.7Sr_0.3NiO_4±δ shows the anomalies of the conductivity versus oxygen partial pressure which can be related to the orthorhombic–tetragonal crystal structure transformations. The conductivity of the Pr_2−xSr_xNiO_4±δ samples correlates with the average oxidation state of the nickel cations. The samples with x = 0.5 have the highest nickel oxidation state (≈ 2.5+), the highest [Ni³⁺]/[Ni²⁺] ratio close to 1 and show the highest conductivity (≈ 120 S/cm) in the whole pO₂ and temperature ranges investigated.     

HgCdTe buried multi-junction photodiodes fabricated by the liquid phase epitaxy

This article reports the parameters and characteristics of the new type of HgCdTe buried photodiodes operated at near-room temperature (T=200–300 K) in long wavelength infrared spectral range. The liquid phase epitaxy (LPE) Hg_1−xCd_xTe (x=0.16–0.20) layers were grown on holes etched in (1 0 0) CdZnTe substrate. Prior to layer deposition, the CdZnTe substrate has been etched to form the bars on 30 μm centers and 20-μm depth. Next, 20-μm thick HgCdTe epitaxial layer has been grown from Te-rich solution. The type of conductivity was controlled by deliberately doping with indium (n-type) and Sb (p-type). The Nomarski microscopy showed that the surface of specially prepared layers was flat and the composition of layers, measured by Fourier transform infrared microscopy, was homogenous. Samples were cleaved and examined in cross section by scanning electron microscopy. Finally, serial connected multi-junction photodiodes have been fabricated. It is shown that LPE can be used to realise advanced bandgap engineered multi-junction structures. This conclusion is supported by device quality characteristics: spectral response and detectivity.     

Optical nutation in a magnetized semiconductor quantum well structure

Using the semiclassical coherent radiation—semiconductor interaction model, optical nutation has been analysed in aGaAs / Al_xGa_1 − xAs quantum well structure (QWS) assumed to be immersed in a moderately strong magnetic field and irradiated by a not-too-strong near band gap resonant femtosecond pulsed Ti–sapphire laser. The finite potential well depth of the QWS and the Wannier–Mott excitonic structure of the crystal absorption edge is taken into account. The excitation intensity is assumed to be below the Mott transition where the various many-body effects have been neglected with adequate reasoning. Numerical analysis made for a GaAs quantum well of thickness  ∼  100 Åand the confining layers ofAl_xGa_1 − xAs withx =  0.3 at intensity I ≤  5  ×  10⁶Wcm ^− 2reveals that the real and imaginary parts of the transient complex-induced polarization are enhanced with an increase in the magnetic field and their ringing behaviour confirms the occurrence of optical nutation in the QWS.     

High temperature properties of the n = 2 Ruddlesden–Popper phases (La,Sr)3(Fe,Ni)2O7−δ

The crystal chemistry and mixed conductor properties of the n = 2 member of the Ruddlesden–Popper (R–P) phases Sr_3−xLa_xFe_2−yNi_yO_7−δ with 0 ≤ x ≤ 0.3 and 0 ≤ y ≤ 1.0 have been studied at high temperature. High-temperature X-ray diffraction and thermogravimetric measurements of the equilibrium pO₂ (10^− 5 ≤ pO₂ ≤ 1 atm) in the temperature range 400 ≤ T ≤ 1000 °C indicate that the Sr₃FeNiO_7−δ phase is able to accommodate a large oxygen non-stoichiometry (δ ∼ 1.5) without structural transformations. The electrical conductivity and oxygen permeability increase with the substitution of Ni for Fe in the range 550 ≤ T ≤ 1000 °C. The electrical transport of the Sr₃FeNiO_7−δ phase is thermally activated and the activation energy decreases with the substitution of Ni for Fe for a given oxygen content. The increase in the oxygen permeation flux with increasing Ni content is due to an increasing oxygen non-stoichiometry and a lower activation energy for permeation.     

Polyphosphazene based composite polymer electrolytes

Composite salt-in-polymer electrolyte membranes were prepared from poly[(bis(2-methoxyethyl)amino)_1−x(n-propylamino)_x-phosphazene] (BMEAP) with dissolved LiCF₃SO₃ and dispersed Al₂O₃ nanoparticles (40 nm). Membranes with good mechanical stability were obtained. Low ionic conductivities were found in particle free membranes with maximum conductivities at 10 wt.% LiCF₃SO₃ ranging from 3.1 × 10^− 7 S/cm at 30 °C to 1.8 × 10^− 5 S/cm at 90 °C. For the composite membranes, addition of 2 wt.% Al₂O₃ nanoparticles leads to a steep increase of the conductivity by almost two orders of magnitude as compared to the homogeneous membranes. The highest room temperature conductivity for the investigated BMEAP–LiCF₃SO₃–Al₂O₃ composite systems was 10^− 5 S/cm.     

Hardness and microstructural variation of Al–Mg–Mn–Sc–Zr alloy

Variations of Vickers hardness were observed in Al–Mg–Mn alloy and Al–Mg–Mn–Sc–Zr alloy at different ageing times, ranging from a peak value of 81.2 HV at 54 ks down to 67.4 HV at 360 ks, below the initial hardness value, 71.8 HV at 0 ks for the case of Al–Mg–Mn–Sc–Zr alloy. Microstructures of samples at each ageing stage were examined carefully by transmission electron microscopes (TEMs) both in two-dimensions and three-dimensions. The presence of different types, densities, and sizes of particles were observed dispersed spherical Al₃Sc_1−xZr_x and also block-shaped Al₃Sc precipitates growing along <1 0 0>_Al with facets {1 0 0} and {1 1 0} of the precipitates. TEM analysis both in two-dimensions and three-dimensions, performed on various samples, confirmed the direct correlation between the hardness and the density of Al₃Sc.     

Effect of Li-substitution on piezoelectric and ferroelectric properties of (Bi0.92Na0.92−xLix)0.5Ba0.06Sr0.02TiO3 lead-free ceramics

New lead-free ceramics (Bi_0.92Na_0.92−xLi_x)_0.5Ba_0.06Sr_0.02TiO₃ have been fabricated by a conventional ceramic technique and their electrical properties have been studied. X-ray diffraction studies reveal that Li⁺, Ba²⁺ and Sr²⁺ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure. The partial substitution of Li⁺ for Na⁺ increases the remanent polarization P_r of the ceramics. Because of the large P_r and low coercive field E_c, the ceramics with x = 0.075–0.125 exhibit excellent piezoelectric properties: d₃₃ = 189–235 pC/N, k_p = 33.6–36.3% and k_t = 51.6–54.3%. The ceramics exhibit relaxor behaviors after the substitution of Li⁺ for Na⁺. Our results also suggest that polar and non-polar phases may coexist in the ceramics at temperatures above the depolarization temperature T_d.     

Characteristics of pulse plated CdxZn1−xSe films

Cd_xZn_1−xSe films (0 ⩽ x ⩽ 1) were deposited for the first time by the pulse plating technique at different duty cycles in the range 6–50% at room temperature from an aqueous bath containing zinc sulphate, cadmium sulphate and selenium oxide. To the author’s knowledge this is the first report on pulse plated Cd_xZn_1−xSe films. The deposition potential was −0.9 V (SCE). The as deposited films exhibited cubic structure. Composition of the films was estimated by Energy Dispersive Analysis of X-ray studies. X-ray photoelectron spectroscopy studies indicated the binding energies corresponding to Zn(2p_3/2), Cd(3d_5/2 and 3d_3/2) and Se(3d_5/2 and 3d_3/2). Optical band gap of the films varied from 1.72 to 2.70 eV as the composition varied from CdSe to ZnSe side. Atomic force microscopy studies indicated grain size in the range of 20–150 nm.     

Mixed conductivity and electrocatalytic performance of SrFeO3-δ–SrAl2O4 composite membranes

Oxygen-ionic and electronic transport in dense (SrFe)_1−x(SrAl₂)_xO_z composites, consisting of strontium-deficient Sr(Fe,Al)O_3-δ and SrAl₂O₄ phases, is determined by the properties of perovskite-like solid solution. Increasing the content of SrAl₂O₄, with a total conductivity as low as 5 × 10^− 7 −  10^− 5 S × cm^− 1 at 973–1273 K in air, results in the gradual decrease of the partial conductivities, but also enables the suppression of thermal expansion. Compared to single-phase SrFe_1−xAl_xO_3-δ, (SrFe)_1−x(SrAl₂)_xO_z composites exhibit enhanced thermomechanical properties, while the oxygen permeability of these materials has similar values. The composite membranes exhibit stable performance under air/(H₂–H₂O–N₂) and air/(CH₄–He) gradients at 973–1173 K. The oxidation of dry methane by oxygen permeating through (SrFe)_0.7(SrAl₂)_0.3O_z results in dominant total oxidation, suggesting the necessity to incorporate a reforming catalyst into the ceramic reactors for natural gas conversion.     

Electrical conductivity and thermal expansion of the oxy-cuspidine Gd4Al2O9 substituted with Ca and Sr

The series of Gd_4 ? xM_xAl₂O_9 ? x/2 (M = Ca, Sr) with x = 0, 0.01, 0.05, 0.10 and 0.25 was prepared by the citrate complexation method. Both Gd_4 ? xCa_xAl₂O_9 ? x/2 and Gd_4 ? xSr_xAl₂O_9 ? x/2 show the monoclinic cuspidine structure with space group of P2₁/c up to 0.05–0.1 and 0.01–0.05 mol for Ca and Sr, respectively. Beyond the substitution limit of Gd₄Al₂O₉, GdAlO₃ and SrGd₂Al₂O₇ appear as additional phases. The highest electrical conductivity obtained at 900 °C yielded σ = 1.49 × 10^? 4 S/cm for Gd_3.95Ca_0.05Al₂O_8.98. In comparison, the conductivity of pure Gd₄Al₂O₉ was σ = 1.73 × 10^? 5 S/cm. The conductivities determined are in a similar range as those of other cuspidine materials investigated previously. The thermal expansion coefficient of Gd₄Al₂O₉ at 1000 °C was 7.4 × 10^? 6 K^? 1. The phase transition between 1100 and 1200 °C reported earlier changes with increasing substitution of Ca and Sr.