基于线阵InGaAs光电二极管阵列的光纤光栅传感解调

采用线阵InGaAs光电二极管阵列和体相位光栅并结合空分复用和波分复用技术,对光纤光栅传感进行解调.设计了基于线阵InGaAs光电二极管阵列和体相位光栅的光纤光栅传感解调系统,通过系统测试和性能分析,该解调系统解调带宽42 nm,信噪比30 dB,波长偏移测量精确度±15 pm,功率测量精确度为±0.3 dB.基于线阵InGaAs光电二极管阵列和体相位光栅的光纤光栅解调系统不但尺寸小,功耗低,而且具有较高的解调速度.     

硅基1.55 μm可调谐共振腔窄带光电探测器的研究

制作了一种低成本硅基1.55 μm可调谐共振腔增强型探测器.首次获得硅基长波长可调谐共振腔探测器的窄带响应,共振峰量子效率达44％,峰值半高宽为12.5nm,调谐范围14.5nm,并且获得1.8 GHz的高频响应.本制作工艺不复杂,成本低,有望用于工业生产.     

Exciton optical absorption in disordered,strained InGaAs/GaAs single quantum wells

The absorption coefficient spectrum of undoped, disordered InGaAs/GaAs single quantum wells is calculated within the parabolic band approximation in this compressively strained structure. Results are presented for light propagating normal to and along the plane of the quantum well, taking into consideration the 1S-like exciton and all bound states, including the 2D enhancement Sommerfeld factor. The results presented here show that the exciton peaks in TE polarization remain constant with disordering and exhibit a larger wavelength shift than in TM polarization. The absorption edge in disordered InGaAs/GaAs, which is a function of the strain and interdiffusion, can be tailored to the desired wavelength around 1.0 μm. These results can be of interest in the design of photonic devices on a single substrate.     

不同盖层对InAs/GaAs量子点结构和光学性质的影响

利用金属有机化合物气相沉积设备生长了不同盖层结构的InAs/GaAs量子点,采用原子力显微镜和光致发光光谱仪对量子点的结构和光学性质进行了研究.量子点层之间的盖层由一个低温层和一个高温层组成.对不同材料结构的低温盖层的对比研究表明,In组分渐变的InGaAs低温盖层有利于改善量子点均匀性、减少结合岛数目、提高光致发光强度;当组分渐变InGaAs低温盖层厚度由6.8 nm增加到12 nm,发光波长从1256.0 nm红移到1314.4 nm.另外,还对不同材料结构的高温盖层进行了对比分析,发现高温盖层采用In组分渐变的InGaAs材料有利于光致发光谱强度的提高. 关键词： 半导体量子点 盖层 组分渐变     

向短波红外延伸的微光夜视技术及其应用

对传统的微光像增强器与向短波红外延伸的InGaAs光阴极像增强器进行了比较,分析了通过调节组分而使响应波段覆盖夜天光辐射主要波段的InGaAs材料特性,揭示了以InGaAs半导体材料为光阴极的像增强器将在夜间具有更高的量子效率和响应度。介绍了InGaAs器件技术的国内外研究现状,InGaAs光阴极微光器件在短波红外波段的辐射响应是传统像增强器的100~1 000倍,InGaAs全固态探测器可在0.4 m~1.7 m宽光谱成像,在0.9 m~1.7 m范围的量子效率大于80%,表明该器件在激光探测、远距离定位与跟踪、情报侦察、夜间辅助驾驶等方面可以获得广泛应用。     

基于MEMS微镜的长波近红外光谱仪的设计与实现

为适应光谱仪微型化、集成化的发展趋势,详细分析了MEMS微镜应用于微型长波近红外光谱仪的方法和涉及的主要问题,例如分光系统的设计、MEMS微镜的选择、探测器与前置放大电路的设计等。并将50 Hz谐振频率、峰峰驱动电压为10V的MEMS微镜、高灵敏度的InGaAs单元探测器,结合立特罗式分光光路,设计和实现了900～2 055 nm波段的微型长波近红外光谱仪样机,其中1 000～1 965 nm谱段的光谱分辨率介于9.4～16 nm之间。采用MEMS扫描微镜技术后,一方面简化了光谱仪中的复杂机械结构,使尺寸可以更小;另一方面实现了单探测器的长波近红外光谱仪,与阵列长波近红外探测器光谱仪相比,成本有所降低。作为应用实例,此样机成功对纯水以及乙醇-水溶液的长波近红外光谱进行了测量,实现了乙醇-水溶液的浓度预测分析,其中本样机测量的纯水长波近红外光谱与文献相符。     

门控下InGaAs/InP单光子探测器用于符合测量的时域滤波特性研究

基于砷化镓/磷化铟雪崩光电二极管(InGaAs/InP APD)的半导体单光子探测器因工作在通信波段,且具有体积小、成本低、操作方便等优势,在实用化量子通信技术中发挥了重要作用.为尽可能避免暗计数和后脉冲对单光子探测的影响,InGaAs/InP单光子探测器广泛采用门控技术来快速触发和淬灭雪崩效应,有效门宽通常在纳秒量级.本文研究揭示了门控下单光子探测器可测量的最大符合时间宽度受限于门控脉冲的宽度,理论分析与实验结果良好拟合.该研究表明,门控下InGaAs/InP单光子探测器用于双光子符合测量具有显著的时域滤波特性,限制了其在基于双光子时间关联测量的量子信息技术中的应用.     

InGaAs(S)/InP应变量子阱能带计算和有源区材料的选择

本文利用K·P能带理论和形变势模型计算了应变对量子阱结构能带及能级的影响,提出了在压缩应变情况下,当固定发射波长时,利用InGaAsP做阱材料可对应变大小和阱宽进行独立控制,克服了应变较大时InGaAs阱材料阱宽较窄的困难。在伸张应变情况下,利用InGaAs做有源区较为合适。     

InGaAs(S)/InP应变量子阱能带计算和有源区材料的选择

本文利用K·P能带理论和形变势模型计算了应变对量子阱结构能带及能级的影响,提出了在压缩应变情况下,当固定发射波长时,利用InGaAsP做阱材料可对应变大小和阱宽进行独立控制,克服了应变较大时InGaAs阱材料阱宽较窄的困难。在伸张应变情况下,利用InGaAs做有源区较为合适。     

宽调谐范围垂直腔面发射激光器特性分析及设计

运用光学传输矩阵和有限元方法对波长可调谐垂直腔面发射激光器(VCSELs)的波长调谐范围进行了研究.对中心波长为980nm的可调谐VCSELs的波长调谐特性和微电子机械系统(MEMS)悬臂梁结构进行了设计，并进行了实验研究.结果表明，MEMS可调谐VCSELs调谐特性同时受到光波谐振腔结构和悬臂梁最大位移的共同影响.在悬臂梁几何尺寸和激光器有源区结构一定的条件下，通过优化可调谐VCSELs的牺牲层厚度可实现大范围波长调谐.同时，对可调谐VCSELs整体结构进行了设计，计算结果显示波长调谐范围达到30nm以 关键词： 悬臂梁 可调谐垂直腔面发射激光器     

Forensic and security applications of a long‐wavelength dispersive Raman system

A novel dispersive system operating at 1064‐nm excitation and coupled with transfer electron InGaAs photocathode and electron bombardment CCD technology has been evaluated for the analysis of drugs of abuse and explosives. By employing near‐IR excitation at 1064‐nm excitation wavelength has resulted in a significant damping of the fluorescence emission compared to 785‐nm wavelength excitation. Spectra of street samples of drugs of abuse and plastic explosives, which usually fluoresce with 785‐nm excitation, are readily obtained in situ within seconds through plastic packaging and glass containers using highly innovative detector architecture based upon a transfer electron (TE) photocathode and electron bombarded gain (EB) technology that allowed the detection of NIR radiation at 1064 nm without fluorescence interference. This dispersive near‐IR Raman system has the potential to be an integral part in the armoury of the forensic analyst as a non‐destructive tool for the in‐situ analysis of drugs of abuse and explosives. Copyright © 2015 John Wiley & Sons, Ltd.     

Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of approximately 40 nm at an approximately 1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.     

Calibration of Near-Infrared Detectors Using a Wavelength Tunable Light Source

Optical Review - This paper presents the spectral responsivity calibrations of two indium gallium arsenide (InGaAs) and one germanium based near-infrared photovoltaic detectors using a wavelength...     

一种基于ARM的光波长路由器的控制与网管技术

介绍了一种全光波长路由器的系统结构和工作原理.在设计中采用了AWG和AOWC构成的光交叉矩阵的结构,并通过相应的控制系统实现了波长路由功能.着重介绍了基于ARM实现光波长路由器的控制和网管技术.最后通过测试证明该系统可以透明地传输2.5Gb/s和10 Gb/s的光信号.     

光栅耦合外谐振腔调谐的半导体量子级连激光器

本文研究了由InGaAs/InAlAs材料组成,波长为4.6和5.1微米的量子级连中红外半导体激光器的光栅外耦合谐振腔的特性。在温度是80K时波长可调制宽度是激光中心波长的1.5%左右。对于这两个激光器而言,它们的波长可调制宽度随温度升高而减低。被调制的单模激光器的输出光功率是几个毫瓦,激光的谱线宽度是1到2个微米。激光阈值电流随波长缓慢变化,然而激光输出效率在短波长时更加优化。     

Implementation of a novel low‐noise InGaAs detector enabling rapid near‐infrared multichannel Raman spectroscopy of pigmented biological samples

Pigmented tissues are inaccessible to Raman spectroscopy using visible laser light because of the high level of laser‐induced tissue fluorescence. The fluorescence contribution to the acquired Raman signal can be reduced by using an excitation wavelength in the near infrared range around 1000 nm. This will shift the Raman spectrum above 1100 nm, which is the principal upper detection limit for silicon‐based CCD detectors. For wavelengths above 1100 nm indium gallium arsenide detectors can be used. However, InGaAs detectors have not yet demonstrated satisfactory noise level characteristics for demanding Raman applications. We have tested and implemented for the first time a novel sensitive InGaAs imaging camera with extremely low readout noise for multichannel Raman spectroscopy in the short‐wave infrared (SWIR) region. The effective readout noise of two electrons is comparable to that of high quality CCDs and two orders of magnitude lower than that of other commercially available InGaAs detector arrays. With an in‐house built Raman system we demonstrate detection of shot‐noise limited high quality Raman spectra of pigmented samples in the high wavenumber region, whereas a more traditional excitation laser wavelength (671 nm) could not generate a useful Raman signal because of high fluorescence. Our Raman instrument makes it possible to substantially decrease fluorescence background and to obtain high quality Raman spectra from pigmented biological samples in integration times well below 20 s. Copyright © 2015 John Wiley & Sons, Ltd.     

Profile measurement system based on linnik-type interferometric microscope for visible-light region and infrared-light region

A profile measurement system consisting of linnik-type interferometric microscope, light source and cameras is developed based on white-light scanning interferometry extending from the visible-light region to the infrared-light region. Three-dimensional profiles of microstructures are obtained via a phase-stepping algorithm using a CMOS array camera for the visible-light region and an InGaAs CCD array camera for the infrared-light region. Errors of the measurement system along with extensive applications in MEMS device profile reconstruction of top surface, sidewall and internal structures are discussed in detail.     

Investigation of the relation between photoluminescence intensity and decay time reduction with plasmon effect in InGaAs quantum dots

Plasmonic effects on photoluminescence are investigated via time-integrated and resolved photoluminescence (PL) in epitaxially grown InGaAs quantum dots (QDs). The decay time and PL intensities are compared as a function of the density of Ag nanoplates. Optimal conditions for both reduction lifetime and enhanced PL intensity were found to be a 1:15 ratio of Ag nanoplates to water. Both less and greater than that ratio 1:15, the lifetime increased and the enhancement factor of PL intensity decreased. In addition, the plasmon effect was investigated via resonance wavelength and temperature-dependent PL measurements. At 150K near the resonance conditions between PL from InGaAs QDs and Ag nanoplates, both the lifetime reduction and enhancement factor are maximized. Intensity enhancement is correlated to lifetime reduction for various conditions to identify a condition for maximized enhancement of radiative recombination for designing future ultrafast plasmonic nanolasers.     

The beam properties of high-power InGaAs/AlGaAs quantum well lasers

The vertical beam quality factor of the fundamental TE propagating mode for InGaAs/AlGaAs SCH DQW lasers emitting at 940 nm is investigated by using the transfer matrix method and the non-paraxial vectorial moment theory for non-paraxial beams. An experimental approach is given for the measurement of the equivalent vertical beam quality factor of an InGaAs/AlGaAs SCH DQW laser. It has been shown that the vertical beam quality factor M_x² is always larger than unity, whether the thickness of the active region of LDs is much smaller than the emission wavelength or not.     

941nm2%占空比大功率半导体激光器线阵列

计算了半导体激光器的激射波长与量子阱宽度以及有源层中In组分的关系,确定了941nm波长的量子阱宽度和In组分.并利用金属有机化合物气相淀积(MOCVD)技术生长了InGaAs/GaAs/AlGaAs分别限制应变单量子阱激光器材料.利用该材料制成半导体激光器线阵列的峰值波长为940.5 nm,光谱的FWHM为2.6 nm,在400 μs,50 Hz的输入电流下,输出峰值功率达到114.7 W(165 A),斜率效率高达0.81 W/A,阈值电流密度为103.7 A/cm2;串联电阻5 mΩ,最高转换效率可达36.9%.