Nitrogen oxides and ammonia sensing characteristics of SILAR deposited ZnO thin film

Pure and Sn, Ni doped ZnO thin films were deposited on glass substrates using a novel successive ionic layer adsorption and reaction (SILAR) method at room temperature. Microstructures of the deposited films were optimized by adjusting growth parameters. The variation in resistivity of the ZnO film sensors was performed with rapid photothermal processing (RPP). The effect of rapid photothermal processing was found to have an important role in ZnO based sensor sensitivity to NO₂, NH₃. While the undoped ZnO film surface exhibited higher NH₃ sensitivity than that of NO₂, an enhanced NO₂ sensitivity was noticed for the ZnO films doped with Sn and higher NH₃ sensitivity was obtained by Ni doping.     

Synthesis of nanocrystalline CdS thin film by SILAR and their characterization

Cadmium sulphide (CdS) thin film was prepared by successive ion layer adsorption and reaction (SILAR) technique using ammonium sulphide as anionic precursor. Characterization techniques of XRD, SEM, TEM, FTIR and EDX were utilized to study the microstructure of the films. Structural characterization by x-ray diffraction reveals the polycrystalline nature of the films. Cubic structure is revealed from X-ray diffraction and selected area diffraction (SAD) patterns. The particle size estimated using X-ray line broadening method is approximately 7 nm. Instrumental broadening was taken into account while particle size estimation. TEM shows CdS nanoparticles in the range 5–15 nm. Elemental mapping using EFTEM reveals good stoichiometric composition of CdS. Characteristic stretching vibration mode of CdS was observed in the absorption band of FTIR spectrum. Optical absorption study exhibits a distinct blue shift in band gap energy value of about 2.56 eV which confirms the size quantization.     

Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 Å. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle ∼156°) while that on glass it is hydrophilic (contact angle ∼88°). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.     

Physical and electrochemical study of platinum thin films deposited by sputtering and electrochemical methods

In this work platinum thin films deposited by sputtering and electrochemical methods were characterized through physical and electrochemical analysis. The as-grown platinum thin films were characterized through X-ray diffraction (XRD), atomic force microscopy (AFM); scanning electronic microscopy (SEM) and through electrochemical impedance spectroscopy (EIS) measurements. Structural studies indicated that platinum thin films were polycrystalline. Morphological characteristics were significantly affected by the substrate type and synthesis method. Finally the EIS analysis indicated that platinum films were electrochemically stable and present both low resistance of charge transfer and low series resistance; the equivalent circuit of platinum interface has been proposed.     

Effect of cycle numbers on the structural,linear and nonlinear optical properties in Fe2O3 thin films deposited by SILAR method

Fe₂O₃ thin films were deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates at different cycle numbers to investigate structural, linear and nonlinear optical properties. X-Ray Diffraction (XRD) analysis revealed that the Fe₂O₃ thin films have a non-crystalline nature. The morphological properties of the films were investigated by Field Emission-Scanning Electron Microscopy (FE-SEM) and the results show that the films’ surfaces are porous. The linear and nonlinear optical parameters were evaluated and analyzed by using transmittance and absorbance measurements. For these measurements, UV–Vis spectroscopy at room temperature was used. The refractive index values were calculated in the range of 1.45–3.23 for visible region (400–700 nm). Obtained results reveal that direct optical band gap changed between 2.62 and 2.68 eV and indirect optical band gap changed between 1.67 and 1.77 eV. Additionally, optical electronegativity, optical dielectric constants, surface and volume energy loss functions, nonlinear refractive index, linear optical susceptibility, third-order nonlinear optical susceptibility, optical and electrical conductivity, and loss tangent values were calculated and discussed in detail. It was found that each parameter studied is dependent on the cycle numbers. Also, it can be stated that Fe₂O₃ thin films are promising candidate for solar cells and optoelectronic device technology.     

Chemical synthesis of nano-porous ruthenium oxide (RuO2) thin films for supercapacitor application

Ruthenium oxide (RuO₂) thin films have been prepared using single step chemical method containing Ru(III) Cl₃ solution in an aqueous medium at low temperature. The structural, morphological and optical properties have been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and optical absorption technique. The XRD study revealed the formation of amorphous RuO₂ thin film. The surface examination by SEM showed formation of nano-porous material on the substrate. The TEM study revealed the formation of nanostructured material. The optical absorption studies showed the presence of direct band transition with band gap equal to 2.2 eV. The RuO₂ has proved its applicability in supercapacitor showing 50 F/g specific capacitance in 0.5 M H₂SO₄ at 20 mV/s scan rate.     

Improvement of electrical characteristics of InGaZnO thin film transistors by using HMDSO/O2 plasma deposited SiOCH buffer layer

In this work, we present the performance improved InGaZnO thin film transistors by inserting low temperature processed 10 nm thick SiOCH buffer layers between SiN_x insulator and InGaZnO channel layer. The influences of oxygen flow rate during the deposition of SiOCH buffer layer have been intensively investigated. Basing on the analysis of hall effect measurement and Fourier transform infrared spectrum, the SiOCH buffer layer can effectively increase the carrier concentration of the channel layer by the hydrogen doping due to re-sputtering and diffusion effect. The InGaZnO thin film transistor with buffer layer exhibits an enhanced performance with mobility of 13.09 cm²/vs, threshold voltage of −0.55 V and I_on/I_off over 10⁶.     

Preparation of cobalt oxide thin films and its use in supercapacitor application

Present work explored a room temperature, simple and low cost chemical route for the cobalt oxide film onto copper substrate from cobalt chloride (CoCl₂·6H₂O) precursor and characterization for its structural and electrochemical properties for supercapacitor application. The morphology and crystal structure of the film were investigated by scanning electron microscopy and X-ray diffraction techniques, respectively. The electrochemical supercapacitive properties of cobalt oxide film were evaluated using cyclic voltammetry and galvanostatic charge-discharge methods. The film showed maximum specific capacitance of (165 F/g) in 1.0 M aqueous KOH electrolyte at scan rate 10 mV/s.     

Chemical synthesis of nanocrystalline SnO2 thin films for supercapacitor application

Nanocrystalline SnO₂ thin films were deposited by simple and inexpensive chemical route. The films were characterized for their structural, morphological, wettability and electrochemical properties using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy techniques (SEM), transmission electron microscopy (TEM), contact angle measurement, and cyclic voltammetry techniques. The XRD study revealed the deposited films were nanocrystalline with tetragonal rutile structure of SnO₂. The FT-IR studies confirmed the formation of SnO₂ with the characteristic vibrational mode of Sn-O. The SEM studies showed formation of loosely connected agglomerates with average size of 5-10 nm as observed from TEM studies. The surface wettability showed the hydrophilic nature of SnO₂ thin film (water contact angle 9°). The SnO₂ showed a maximum specific capacitance of 66 F g⁻¹ in 0.5 Na₂SO₄ electrolyte at 10 mV s⁻¹ scan rate.     

Tunable laser thin film interrogation

Film thickness is not only a crucial parameter in producing processes, such as semiconductor and optics production, but also a monitored variable in chemistry and biology, for example for tissue microscopy. Many working principles have been demonstrated and are in use in different fields due to their different limitations (observation film thickness, accuracy, measurement speed, etc.). One of these working principles is thin film reflectometry (TFR). One method is based on a laser source and monitors the reflected intensity over growing film time. Another one employs a spectrally broad light source and measures the reflected intensity using a spectrometer. We introduce and demonstrate a measurement system based on a tunable laser stage. There are several different setups for laser wavelength tuning. One of the most promising solutions is based on monolithic laser diodes. Rapid tuning of the lasers wavelength is crucial for achieving high measurement rates. Monolithic laser diodes offer highest tuning rates and hence high performance. On the other hand, mechanically tunable lasers show broadband spectra that result in higher thickness accuracy in this particular application. Hence, we show a comparison of thin film measurements with a monolithic and a mechanically tunable laser source. This comparison shows that the measurement accuracy of the monolithic laser diode can compete with mechanical tuning. Furthermore, it is a promising approach when measurement tuning speed is an issue.     

Optical and electrical properties of aluminum zinc oxide (AZO) nanostructured thin film deposited on polycarbonate substrate

Transparent polymer materials, due to their unique properties, such as light weight, optical transparency, and electrical and mechanical properties, have become very attractive as a replacement for inorganic glass substrates in a wide range of optoelectronic applications. In this research, aluminum zinc oxide nanostructured thin film was deposited on polycarbonate polymer substrates using a magnetron sputtering technique. The structure, morphology, and surface composition of the thin film were investigated by X-ray diffraction and field emission scanning electron microscopy. The optical and electrical properties of the thin film were investigated by UV–VIS-NIR spectrophotometer, ellipsometer, and four point probe method. The X-ray diffraction pattern showed that the aluminum zinc oxide thin film had a polycrystalline structure. The optical and electrical results indicated that the refractive index, band gap, and sheet resistance of the aluminum zinc oxide thin film were 1.8, 3.2 eV, and 265 Ω/sq, respectively.     

热蒸发YbF3薄膜的机械特性

 实验研究了热蒸发YbF₃薄膜在大气中的应力和附着力。利用Veeco干涉仪,测试了各种工艺条件下单层YbF₃薄膜的应力。结果发现:YbF₃薄膜的残余应力为张应力,热应力在残余应力中的比重较大;沉积方式对薄膜应力的影响不大;薄膜应力在大气中有一个释放的过程。热处理后,YbF₃薄膜应力增大。     

改进的SILAR法制备ZnO薄膜及其表征

采用一种改进的液相成膜技术——连续离子层吸附与反应(SILAR)法, 用锌氨络离子\[Zn(NH3)4\]2+ 溶液作为独立的前驱体溶液, 以载玻片为衬底, 在(125±5) ℃的温度下沉积出致密、 透明的ZnO薄膜。 分别用冷场发射型扫描电镜(FESEM)和X射线衍射(XRD)分析了薄膜样品的表面形貌和结晶状态, 用紫外可见分光光度计(UV-Vis spectroscopy)研究了薄膜样品的发光性能。 结果表明: 获得样品为六角纤锌矿结构的多晶薄膜材料沿\[002\]方向择优生长; 样品表面均匀、 致密, 厚度约为550 nm;在可见光波段具有高的透射率(＞80％)。 A modified solution method,successive ionic layer adsorption and reaction(SILAR),was applied to prepare transparent zinc oxide(ZnO) film on glass substrate at (125±5) ℃ in mixed ion precursor solution. The surface morphology and crystallizations of films were analyzed by field emission scanning microscopy(FESEM) and X ray diffraction(XRD), respectively. The optical properties of the films were studied by ultraviolet visible(UV Vis)spectroscopy. The results show that the obtained samples are polycrystalline films of hexagonal wurtzite structure,with the preference of [002\] orientation. The as deposited films exhibit uniform and compact surface morphology, with the film thickness of 550 nm, and have high transmittance in the visible band(＞80％).     

Transverse piezoelectric properties of Mn-doped Bi0.5Na0.5TiO3 thin films

Lead-free (Bi_0.5Na_0.5)(Ti_1-xMn_x)O₃ (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO₂/SiO₂/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi_0.5Na_0.5)(Ti_0.995Mn_0.005)O₃ thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (P_r) of 16 μC/cm² was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn-0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO₂/SiO₂/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient ($e_{31}^1$) of 2.43 C/m².     

Structure and microtribological characteristics of laser-arc deposited TiB2 thin film

TiB2 thin film was deposited by laser-arc deposition method on the surface of single crystalline silicon. The morphology, composition, structure and microtribological properties of the film were studied by using XPS, XRD and atomic force/friction force microscope (AFM/FFM). The results show that TiB2 (100) preferred growth on the Si(100)substrate, TiB2(001) preferred growth on the Si(111) substrate. The TiB2 thin film was composed of TiB2 and a small amount of TiO2. The friction coefficient of TiB2 film on substrates Si (100) and Si(111) in microtribological process were 0.087 and 0.073,respectively. TiB2 thin film displayed distinct ability of anti-scratch and wear-resistance.     

Determination of diffusion profiles in thin film couples by means of x-ray-diffraction

An x-ray method for the determination of concentration profiles in thin film diffusion couples is presented. This method is based on the theory of Fourier analysis of x-ray diffraction profiles which is generalized to polycrystalline samples showing nonuniform lattice parameter. A Fourier synthesis of the concentration spectrum is possible when the influences of the particle size and the strain in the sample as well as the instrumental function are eliminated from the measured diffraction profile. This can be done by means of reference profiles obtained from layers of the diffusion components. Absorption of the radiation in the sample is negligible when diffusion couples of symmetrical sandwich structure are used. The method is tested experimentally in the system Au-Cu.     

A novel chemical synthesis and characterization of Mn3O4 thin films for supercapacitor application

Mn₃O₄ thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), field emission scanning electron microscopy (FESEM), wettability test and optical absorption studies. The XRD pattern showed that the Mn₃O₄ films exhibit tetragonal hausmannite structure. Formation of manganese oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.30 eV. Mn₃O₄ film surface showed hydrophilic nature with water contact angle of 55°. The supercapacitive properties of Mn₃O₄ thin film investigated in 1 M Na₂SO₄ electrolyte showed maximum supercapacitance of 314 F g⁻¹ at scan rate 5 mV s⁻¹.     

Phosphonate electrochemical recognition by molecularly imprinted deposited film

In this paper, thin films of titanium oxide imprinted with O,O-dimethyl-(2,4-dichlorophenoxyacetoxyl)(3′-nitrobenyl) methinephosphonate (Phi-NO₂) were prepared via liquid phase deposition (LPD) method on a glassy carbon electrode. The imprinted molecular in the films was removed by treatment with immersion in CH₂Cl₂. X-ray diffraction (XRD) and electrochemical methods were introduced to show the evidence of the molecular imprinting phenomenon. It was also found that the recognition ability of the sensor depended on the substituents associated with tridimensional structures of the nitro-compounds. Under the optimized condition, the sensor showed better sensitivity, selectivity and reproducibility to the imprinted molecule and the linear relationship between the current and the concentration of analyte in the range of 0.1-50 μM was obtained. LPD proved to be a powerful method for imprinting titanium oxide thin sense films.     

Nanostructure evolution during thin film deposition

It is shown how that the combination of atomic deposition and nonlinear diffusion may lead, below a critical temperature, to the growth of nonuniform layers on a substrate. The dynamics of such a system is of the Cahn–Hilliard type, supplemented by reaction terms representing adsorption–desorption processes. The instability of growing uniform layers leads to the formation of nanostructures which correspond to regular spatial variations of substrate coverage. Patterns wavelengths and symmetries are selected by the dynamics and not by variational arguments. For temperatures below critical, one should observe hexagonal arrays of high coverage dots on the surface of otherwise uniform growing layers. On decreasing further the temperature, these structures should transform into hexagonal arrays of low coverage domains, within the growing layer.     

Indium zinc oxide thin films deposited by sputtering at room temperature

The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10¹⁴ and 3 × 10²⁰ cm⁻³ by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ∼0.7 could be controlled between 5 × 10⁻³ and 10⁴ Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm² V⁻¹ s⁻¹.The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.