High-transparency films for nonlinear integrated optics based on P(VDF-TrFE) and poly(α-methyl styrene) host materials

In search of waveguiding polymer films with both highly efficient NonLinear Optical (NLO) and optimum transmission properties the second harmonic generation of light is measured on poled films of P(VDF-TrFE) blended with 10% PMMA or covered by the polarizable guest-host system PMS, both pure and doped with 2% NLO dye The PMS films turn out to be stable electrets after annealing at about 50°C and poling at room temperature. They are thus particularly easily processable candidates for NLO and waveguiding applications.     

PMMA掺杂对P3HT/P(VDF-TrFE)复合薄膜阻变性能影响研究

Organic semiconducting/ferroelectric blend films attracted much attention due to their elec-trical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc-curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly(methyl metacrylate) (PMMA) was introduced as additive into P3HT/P(VDF-TrFE) semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the con-figuration of three components was also put forward to well understand our experimental observations.     

Noise mechanisms investigation in pyroelectric infrared detectors based on Mn-doped Pb(Mg1/3Nb2/3)O3–0.27PbTiO3 vs. LiTaO3 single crystals

Different noise mechanisms between Mn-doped Pb(Mg_1/3Nb_2/3)O₃–0.27PbTiO₃ (Mn-PMNT) and LiTaO₃ (LT) based pyroelectric infrared detectors were observed under voltage mode, revealing that at low frequency of 10 Hz, dielectric loss noise dominates for Mn-PMNT based detectors, while resistance noise for LT based ones. Meanwhile, an extremely low equivalent voltage noise of appropriate 20 nV/Hz^1/2 was obtained in Mn-PMNT based detectors, 1/4 times lower than that of the LT based detectors. On the basis of the different noise mechanisms, frequency dependence of figure of merit for detectivity (F_d) have been deduced, providing significant reference values for the analysis of different materials based pyroelectric detectors.     

Core–corona PSt/P(BA–AA) composite particles by two-stage emulsion polymerization

Raspberry-shaped composite particles with polystyrene (PSt) as core and poly(n-butyl acrylate-co-acrylic acid) (P(BA–AA)) as corona were synthesized via emulsion polymerization. The random copolymer, P(BA–AA), was pre-prepared and used as a polymeric surfactant, its emulsifying properties adjusted by changing the mass ratio of BA and AA. The morphology of the resulting core–corona composite particles, P(St/P(BA–AA)), could be regulated and controlled by varying the concentrations of P(BA–AA) or the mass ratio of BA:AA in P(BA–AA). The experimental results indicate that 3.0–6.0 wt% of P(BA–AA) is required to obtain stable composite emulsions, and P(BA–AA) with a mass ratio of BA:AA = 1:2 is able to generate distinct core–corona structures. A mechanism of composite particle formation is proposed based on the high affinity between the PSt core and the hydrophobic segments of P(BA–A). The regular morphology of the colloidal film is expected to facilitate potential application of core–corona particles in the field of light scattering. Furthermore, the diversity of core–corona particles can be expanded by replacing P(BA–AA) corona particles with other amphiphilic particles.     

Fabrication and piezoelectricity of 0–3 cement based composite with nano-PZT powder

Lead zirconate titanate (Pb(Zr_0.52Ti_0.48)O₃) (PZT) nano-powder with a perovskite structure was fabricated using sol–gel process. The average crystallite diameter of the PZT powder is calculated to be 23.6 nm and the average agglomerate size is about 200 nm. The 0–3 cement based nano-PZT composites were obtained by pressing the mixture of white cement and the nano-PZT powders under a high pressure followed by steam curing. The properties of the nano-PZT/cement piezoelectric composites have been measured and compared to the PZT/cement composites incorporated with ground coarse PZT particles. The enhanced piezoelectricity of the nano-PZT/cement composites can be attributed to the good connectivity between the nano-PZT particles among the cement matrix.     

Surface plasmon resonance response of Au–WO3?x composite films

Surface plasmon resonance of metal–dielectric composite thin films formed by noble metal nanoparticles embedded in a dielectric matrix offers a high degree of flexibility and enables many applications such as surface enhanced spectroscopes, and biological and chemical sensing. In this article, Au–WO_3−x composite films of various Au contents and thicknesses were prepared by the pulsed laser deposition technique, and their SPR responses were measured in the Kreschmann geometry, using a polarized light beam at 640 nm wavelength. Theoretical calculation of SPR responses based on the Bruggeman or Maxwell–Garnett model with the MacLeod general characteristic matrix method is in obvious discrepancy with experimental measurements but it is able to predict the trend in term of the dependence of SPR responses on Au content and thickness of the Au–WO_3−x films. The SPR responses of the Au–WO_3−x films when exposed to NO gas molecules were measured and the preliminary results indicated that gas sensing using the SPR responses of metal–dielectric composite films is feasible.     

Electrical properties and photoconductivity of polyaniline/sulfonated poly(arylene ether sulfone) composite films

Temperature dependent electrical conductivity of the polyaniline-sulfonated poly(arylene ether sulfone) with 35 mol percent sulfonation (PANI-BPS35) composite films were investigated in the temperature range of 80–380 K. These composite films showed semiconductor behavior with the exponential variation of inverse temperature dependence of electrical conductivity. Calculated Mott’s parameters showed that variable range hopping mechanism is the dominant transport mechanism for the carriers in low temperature region. Photoconductivity of the PANI-BPS35 composite films having 10, 20, and 40 weight percent conductive filler under various illumination intensities was also studied. Photocurrent of the composite films increased with increasing both polyaniline weight fraction and temperature. Finally, the effect of doping on both electrical conductivity and the photoconductivity of the composite films was investigated.     

The initial growth structure of Ni1-xFex (x=0.6–0.8) films dc-biased plasma-sputter-deposited on Ni/MgO(0 0 1), and on Fe/MgO(0 0 1)

Cross sectional and plane-view transmission electron microscopy (X- and PV-TEM) were used to investigate the initial growth phase of 5, 10, 20 and 40 nm thick Ni_1-xFe_x (x=0.6–0.8) films, prepared on MgO(0 0 1) covered with a buffer layer of Fe or Ni as well as on naked MgO(0 0 1). The 100 nm thick buffer layers of Fe and Ni were pre-grown on MgO(0 0 1). All of Ni_0.20Fe_0.80, Ni_0.40Fe_0.60, Fe and Ni films could be epitaxially grown at 250°C by dc-biased plasma sputtering at 2.9 kV in pure Ar gas.The films of Ni_0.20Fe_0.80 and Ni_0.40Fe_0.60 were grown in their own stable phase, bcc and fcc on MgO(0 0 1), respectively. However, Ni_0.20Fe_0.80 film could be grown in fcc phase pseudomorphic with Ni(0 0 1) up to 20 nm thick on Ni/MgO(0 0 1), while Ni_0.40Fe_0.60 film in bcc phase pseudomorphic with Fe(0 0 1) up to 10 nm thick on Fe/MgO(0 0 1). With increasing thickness, their growth phases transformed into their own stable phases. Whether or not the pseudomorphic phase may be induced and what its critical thickness may be should depend primarily on the lattice misfit between the crystal planes in contact. The growth mode of Ni_0.40Fe_0.60 film was investigated more in details to be compared with the simulations of the average strain energy versus thickness and with those of the critical thickness of the pseudomorphic films versus the lattice misfit between the contacted crystal planes.     

He-broadening and shifting coefficients of HCl lines in the (1←0) and (2←0) infrared transitions

ABSTRACT

We report experimental results on the broadening and shifting coefficients in a large interval of J quantum numbers in the fundamental and first overtone vibration–rotation bands of the HCl molecule in mixtures with helium. Many of the values, especially for the overtone transition, are novel. The uncertainties for the isotope-averaged broadening coefficients amount to 2% on average for the fundamental and 1.5% for the overtone bands. Shifts have a typical uncertainty of 3%.     

Preparation and luminescence of (SBA-15)–Eu2O3 composite materials

In this study, (SBA-15)–Eu₂O₃ host-guest composites have been prepared with SBA-15 mesoporous sieve as host and Eu₂O₃ as guest via the solid-phase ultrasonic method and liquid-phase medium ultrasonic method. The host–guest composite materials showed the properties of luminescence. Four excitation peaks appeared in the excitation spectra of the samples. The excitation peaks are located at 397, 415, 466, 537 nm; 392, 408, 464, 532 nm and 393, 406, 465, 533 nm for the nano-Eu₂O₃, the liquid-phase medium ultrasonic method (LPMUM) and the solid-phase ultrasonic method (SPUM) samples, respectively. SBA-15 has the well-ordered hexagonal arrays of mesopores, which makes centrosymmetry of Eu³⁺ higher in the prepared (SBA-15)–Eu₂O₃ samples. The intensity of ⁵D₀→⁷F₁ transition strengthens, and the intensity of ⁵D₀→⁷F₂ transition weakens.     

Ablation of polyimide (Kapton™) films by pulsed (ns) ultraviolet and infrared (9.17 μm) lasers

Ablation of the surface of a polyimide (Kapton) film by single pulses of 248 nm or 308 nm radiation (20 ns) or 9.17 m laser radiation (170 ns) was studied by photographing the emergence of the blast wave and the plume by a pulse (<1 ns; 596 nm) of visible laser light. The dynamics of the blast wave was similar in the ultraviolet and in the infrared but the composition of the plume was obviously different. A mass of opaque solid material was ejected for as long as 2.6 s following the IR pulse in contrast to the minute amount of solids that are seen in the ablation by UV laser pulses of ns duration. UV laser pulses of 50–400 s duration interact with polyimide surfaces in a manner that is similar to IR laser pulses of ns duration or longer. Chemical analysis of the ablation products that are obtained under various conditions of ablation when compared to the known modes of thermal degradation of polyimide show that the reaction is a thermal process when IR laser pulses or UV laser pulses of long (>10 s) duration are employed. Ablation by ns UV laser pulses differs fundamentally in the chemistry of the products from all of the cases mentioned above.     

Structural and optical properties of Ga2(1−x)In2xO3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD

Ga_2(1−x)In_2xO₃ thin films with different indium content x [In/(Ga + In) atomic ratio] were prepared on α-Al₂O₃ (0 0 0 1) substrates by the metal organic chemical vapor deposition (MOCVD). The structural and optical properties of the Ga_2(1−x)In_2xO₃ films were investigated in detail. Microstructure analysis revealed that the film deposited with composition x = 0.2 was polycrystalline structure and the sample prepared with x up to 0.8 exhibited single crystalline structure of In₂O₃. The optical band gap of the films varied with increasing Ga content from 3.72 to 4.58 eV. The average transmittance for the films in the visible range was over 90%.     

Synthesis and characterization of (h 0 h)-oriented silicalite-1 films on α-Al2O3 substrates

A simple and well-designed synthesis procedure is proposed to fabricate silicalite-1 films on porous α-Al₂O₃ substrates on purpose of preventing the aluminum leaching. The continuous and 2 μm thick seed layer of silicalite-1 crystals is fabricated by using a spin coater. The first-time seeded growth is performed to synthesize a thin layer of intergrown ZSM-5 crystals on the silicalite-1 seed layer, where the use of low alkalinity and short synthesis time is to reduce the aluminum leaching. The intergrown layer of ZSM-5 crystals serves as a barrier to block the aluminum leaching from porous α-Al₂O₃ substrates in the second-time seeded growth, leading to the formation of ca. 11 μm thick intergrown and oriented silicalite-1 films with an extremely high Si/Al ratio. According to SEM images and XRD measurements, the as-synthesized silicalite-1 film is dense, continuous, and (1 0 1)-oriented. The electron probe microanalysis (EPMA) of the resulting film demonstrates that there is no aluminum leaching in the second-time seeded growth. The leaking tests confirm that non-zeolitic pores in the silicalite-1 film are negligible.     

Transparent nano composite PVA–TiO2 and PMMA–TiO2 thin films: Optical and dielectric properties

Transparent nano composite PVA–TiO₂ and PMMA–TiO₂ thin films were prepared by an easy and cost effective dip coating method. Al/PVA–TiO₂/Al and Al/PMMA–TiO₂/Al sandwich structures were prepared to study the dielectric behavior. The presence of metal–oxide (Ti–O) bond in the prepared films was confirmed by Fourier transform infrared spectroscopy. X-ray diffraction pattern indicated that the prepared films were predominantly amorphous in nature. Scanning electron micrographs showed cluster of TiO₂ nanoparticles distributed over the film surface and also there were no cracks and pin holes on the surface. The transmittance of the films was above 80% in the visible region and the optical band gap was estimated to be about 3.77 eV and 3.78 eV respectively for PVA–TiO₂ and PMMA–TiO₂ films by using Tauc's plot. The determined refractive index (n) values were between 1.6 and 2.3. High value of dielectric constant (?′ = 24.6 and ?′ = 26.8) was obtained for the prepared composite films. The conduction in the composite films was found to be due to electrons. The observed amorphous structure, good optical properties and dielectric behavior of the prepared nano composite thin films indicated that these films could be used in opto-electronic devices and in thin film transistors.     

Acetonitrile (CH3CN) infrared absorption cross sections in the 3 μm region

High resolution infrared absorption cross sections of acetonitrile have been determined from spectra recorded in the 3 μm spectral region using a Bruker IFS 125 HR Fourier transform spectrometer (FTS) and a multipass White cell. The eleven synthetic air-broadened acetonitrile spectra were recorded at a resolution of 0.015 cm⁻¹ (calculated as 0.9/MOPD (Maximum Optical Path Difference), the Bruker definition of resolution) over a range of different temperatures and pressures that are representative of conditions in the Earth's atmosphere (50-760 Torr and 207-296 K). Intensities were calibrated using infrared spectra recorded at the Pacific Northwest National Laboratory (PNNL). These new cross sections will enable satellite retrievals of acetonitrile in the 3 μm region from atmospheric spectra recorded by satellite instruments, such as the ACE (Atmospheric Chemistry Experiment)-FTS.     

Growth and luminescent properties of (Lu–Y)AlO3:Ce single crystalline films

The work is dedicated to the development of scintillating screens based on single crystalline films (SCF) of Ce doped Lu–Y–Al perovskites grown by the liquid phase epitaxy method. We show in this work that Lu_1−xY_xAP:Ce SCF with very good structural and optical perfection can be grown from the PbO-based flux onto YAP substrates in all range of x-values. We also found the Lu_1−xY_xAP:Ce SCF can be crystallized by LPE method from the lead free BaO–B₂O₃–BaF₂ flux onto YAP substrates in the range of x values up to 0.4 formula units.     

Structural and photoluminescence properties of SnO2:Ga films deposited on α-Al2O3 (0 0 0 1) by MOCVD

Gallium-doped tin oxide (SnO₂:Ga) films have been prepared on α-Al₂O₃ (0 0 0 1) substrates at 500 °C by the pulse mode metalorganic chemical vapor deposition (MOCVD) method. The relative amount of Ga (Ga/(Ga+Sn) atomic ratio) varied from 3% to 15%. Post-deposition annealing of the films was carried out at different temperatures for 1.5 h in ambient atmosphere . The structural, electrical, optical and photoluminescence (PL) properties of the films have been investigated as a function of annealing temperature. All the films have the rutile structure of pure SnO₂ with a strong (2 0 0) preferred orientation. A single ultraviolet (UV) PL peak near 337.83 nm was observed at room temperature for the 3% Ga-doped as-grown film and near 336 nm for the 15%-doped film, which can be ascribed to electron transition from the oxygen vacancy and interstitial Ga³⁺ donor levels to the acceptor level formed by the substitution of Ga³⁺ for the Sn site. After annealing, the luminescence spectra have changed a little bit, which is being discussed in detail.     

Strong decays of χcJ(2P) and χcJ(3P)

In the framework of the chiral quark model, the mass spectrum of χ _cJ (J = 0, 1, 2, n = 1, 2, 3) is studied with the Gaussian expansion method. Using the wave functions obtained in the study of mass spectrum, the open charm two-body strong decay widths of these states are calculated by using the ³ P ₀ model. The results show that the masses of χ _cJ (1P) and χ _c2(2P) are consistent with the experimental data. But the strong decay width of χ _c2(2P) is three times that of the experimental value. The decay width of χ _c1(2P) is sensitive to its mass. In the quark-antiquark picture, the width is about 385 MeV. However, if the channel coupling effects shift its mass to 3872 MeV, its decay width will be around 1 MeV. The possibility of assigning the state X(3872) as χ _c1(2P) cannot be excluded. To assign X(3915) as χ _c0(2P) is disfavored, due to the unmatching of decay channel. For the χ _cJ (3P) states, no states have been assigned. The possible candidates of χ _c0(3P) are X(4160) and X(4140). Their masses are close to the theoretical ones. The experimental branching ratio of X(4160), $\Gamma (X(4160) \to D\bar D)/\Gamma (X(4160) \to D*\bar D*) < 0.09$ is compatible with that of χ _c0(3P), 0.07. However the broad decay width of X(4160) cannot be explained by the open charm two-body decay. To assign X(4140) as χ _c0(3P) is also possible, due to the compatibility of the total decay width, the further measurement of decay modes of X(4140) are expected to justify the assignment.     

High pyroelectric power generation of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 single crystal

We report the pyroelectric power generation of a relaxor ferroelectric 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN–PT) single crystal. For a temperature variation rate of 0.5 K/s, the PMN–PT generated a closed-circuit current of 10 nA and an open-circuit voltage of 1.1 V at room temperature. The pyroelectric current and voltage of the PMN–PT single crystal were proportional to the temperature variation rate and were sharply enhanced near the structural phase-transition temperature. Additionally, the PMN–PT pyroelectric generator produced stable power for excessive thermal cycling and was highly sensitive to random thermal fluctuations. Our results indicate the potential importance of PMN–PT for high-power pyroelectric generator applications.