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1.
The interactions at the interface between planar Ag3Sn and liquid Sn under ultrasonic irradiation were investigated. An intensive thermal grooving process occurred at Ag3Sn grain boundaries due to ultrasonic effects. Without ultrasonic application, planar shape of Ag3Sn layer gradually evolved into scalloped morphology after the solid-state Sn melting, due to a preferential dissolution of the intermetallic compounds from the regions at grain boundaries, which left behind the grooves embedding in the Ag3Sn layer. Under the effect of ultrasonic, stable grooves could be rapidly generated within an extremely short time (<10 s) that was far less than the traditional soldering process (>10 min). In addition, the deepened grooves leaded to the formation of necks at the roots of Ag3Sn grains, and further resulted in the strong detachment of intermetallic grains from the substrate. The intensive thermal grooving could promote the growth of Ag3Sn grains in the vertical direction but restrain their coarsening in the horizontal direction, consequently, an elongated morphology was presented. All these phenomena could be attributed to the acoustic cavitation and streaming effects of ultrasonic vibration.  相似文献   

2.
A lot of work has been carried out to prepare chemically homogeneous (1 0 0) silicon surfaces. The hydrogen-terminated (1 0 0) silicon surfaces are the most promising ones, especially in view of their remarkable environmental stability. The simplest way to produce hydrogen-terminated surfaces (attack in water solution of HF of a sacrificial, thermally grown, oxide) results in strongly heterogeneous rough surfaces (although with prevailing dihydride terminations). These surfaces can, however, be flattened and homogenized by treating them in H2 at high temperature (>850 C). The morphological and chemical changes undergone by the surface during the treatment are studied X-ray photoelectron spectroscopy, atomic force microscopy, scanning tunnelling microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, reflection high energy electron diffraction and thermal programmed desorption, and the mechanisms responsible for them are discussed.  相似文献   

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