Interactions at the planar Ag3Sn/liquid Sn interface under ultrasonic irradiation

The interactions at the interface between planar Ag₃Sn and liquid Sn under ultrasonic irradiation were investigated. An intensive thermal grooving process occurred at Ag₃Sn grain boundaries due to ultrasonic effects. Without ultrasonic application, planar shape of Ag₃Sn layer gradually evolved into scalloped morphology after the solid-state Sn melting, due to a preferential dissolution of the intermetallic compounds from the regions at grain boundaries, which left behind the grooves embedding in the Ag₃Sn layer. Under the effect of ultrasonic, stable grooves could be rapidly generated within an extremely short time (<10 s) that was far less than the traditional soldering process (>10 min). In addition, the deepened grooves leaded to the formation of necks at the roots of Ag₃Sn grains, and further resulted in the strong detachment of intermetallic grains from the substrate. The intensive thermal grooving could promote the growth of Ag₃Sn grains in the vertical direction but restrain their coarsening in the horizontal direction, consequently, an elongated morphology was presented. All these phenomena could be attributed to the acoustic cavitation and streaming effects of ultrasonic vibration.     

Ultrasonic-accelerated metallurgical reaction of Sn/Ni composite solder: Principle,kinetics, microstructure,and joint properties

The high-melting-point joints by transient-liquid-phase are increasingly playing a crucial role in the die bonding for the high temperature electronic components. In this study, three kinds of Sn/Ni composite solder pastes composed of different sizes of Ni particles were synthesized to accelerate metallurgical reaction among Sn/Ni interfaces under the ultrasonic-assisted transient liquid phase (U-TLP) soldering. The temperature evolution, microstructure and mechanical property in joints composed by these composite solder pastes with or without ultrasonic energy were systemically investigated. The intermetallic joint consisted of high-melting-point sole Ni₃Sn₄ intermetallic compound with a little residual Ni was obtained under the conditions of no pressure and lower power (200 W) in a high-temperature duration of only 10 s, its shear strength was up to 45.3 MPa. Ultrasonic effects significantly accelerated the reaction among the interfaces of liquid Sn and solid Ni, which attributed to the temperature rise caused by acoustic cavitation because of large number of liquid/solid interfaces during U-TLP, resulting in accelerated solid/liquid interfacial diffusion and growth of intermetallic compounds. This intermetallic joint formed by U-TLP soldering has a promising potential for applications in high-power device packaging.     

Investigation of solid-state reaction in Ag/Sn nanostructured thin films at room temperature

Diffusion intermixing processes in nanostructured Ag/Sn thin-film system at room temperature were investigated by means of secondary neutral mass Spectrometry depth profiling technique. As it was confirmed by X-ray diffraction too, the reaction started already in the as-deposited sample. Since the bulk diffusion was frozen at room temperature, the Ag₃Sn phase was formed along the grain boundaries (GBs), gradually consuming the interior of grains, and was grown perpendicular to the GBs. At the same time, formation and growth of a small compact reaction layer near the interface were observed and the shift of the bordering parallel interfaces was controlled by GB diffusion. From the kinetics of the diffusion process in the above two mechanisms, both the interface velocity in the diffusion-induced grain boundary motion regime as well as the coefficient of parabolic growth in the planar growth regime were determined.     

Microstructure evolution and grain refinement of ultrasonic-assisted soldering joint by using Ni foam reinforced Sn composite solder

In this investigation, ultrasonic-assisted soldering at 260 °C in air produced high strength and high melting point Cu connections in 60 s using Ni foam reinforced Sn composite solder. Systematically examined were the microstructure, grain morphology, and shear strength of connections made with various porosities of Ni foam composite solders. Results shown that Ni foams as strengthening phases could reinforce Sn solder effectively. The addition of Ni foam accelerated the metallurgical reaction due to great amount of liquid/solid interfaces, and refined the intermetallic compounds (IMCs) grains by ultrasonic cavitation. The joints had different IMCs by using Ni foam with different porosity. Layered (Cu,Ni)₆Sn₅ and (Ni,Cu)₃Sn₄ phases both existed in Cu/Ni60-Sn/Cu joint while only (Cu,Ni)₆Sn₅ IMCs grew in Cu/Ni98-Sn/Cu joint. As ultrasonic time increasing, Ni skeletons were dissolved and the IMCs were peeled off from substrates and broken into small particles. And then, the IMCs gradually dissociated into refined particles and distributed homogeneously in the whole soldering seam under cavitation effects. Herein, the Cu/Ni60-Sn/Cu joint ultrasonically soldered for 60 s exhibited the highest shear strength of 86.9 MPa, as well as a high melting point about 800 ℃ for the solder seam composed of Ni skeletons and Ni-Cu-Sn IMCs. The characterization indicated that the shearing failure mainly occurred in the interlayer of the soldering seam. The homogeneous distributed granular IMCs and Ni skeletons hindered the crack propagation and improved the strength of Cu alloy joints.     

Ultrarapid formation of homogeneous Cu6Sn5 and Cu3Sn intermetallic compound joints at room temperature using ultrasonic waves

Homogeneous intermetallic compound joints are demanded by the semiconductor industry because of their high melting point. In the present work, ultrasonic vibration was applied to Cu/Sn foil/Cu interconnection system at room temperature to form homogeneous Cu₆Sn₅ and Cu₃Sn joints. Compared with other studies based on transient-liquid-phase soldering, the processing time of our method was dramatically reduced from several hours to several seconds. This ultrarapid intermetallic phase formation process resulted from accelerated interdiffusion kinetics, which can be attributed to the sonochemical effects of acoustic cavitation at the interface between the liquid Sn and the solid Cu during the ultrasonic bonding process.     

Low-temperature STM/STS investigation of nanostructures created by an STM tip on Au(111) surfaces

The structural stability of rapidly solidified (about 10⁴ K/s) Sn–3.7Ag–0.9Zn eutectic solder was explored by high-temperature annealing. For the as-cast solders, the applied fast cooling rate had a significant influence on the microstructure of the solders. The faster the applied cooling rates, the smaller the β-Sn dendrites. After annealing at 473 K for 20 and 50 h, β-Sn dendrites congregated together into bulk ones for minimizing the interfacial energy, and Ag₃Sn intermetallic compounds (IMCs) as well as ternary Ag–Zn–Sn IMCs segregated on the grain boundary of the β-Sn dendrites. It seems that the coarsening of the β-Sn dendrites in the rapidly solidified specimen brought a significant softening during annealing of the explored Sn–Ag–Zn alloy. Finally, the β-Sn dendrites vanished gradually with increase of the annealing period, which leads to a kind of softening.     

热迁移对Cu/Sn/Cu焊点液-固界面Cu6Sn5生长动力学的影响

电子封装技术中, 微互连焊点在一定温度梯度下将发生金属原子的热迁移现象, 显著影响界面金属间化合物的生长和基体金属的溶解行为. 采用Cu/Sn/Cu焊点在250℃和280℃下进行等温时效和热台回流, 对比研究了热迁移对液-固界面Cu₆Sn₅生长动力学的影响. 等温时效条件下, 界面Cu₆Sn₅生长服从抛物线规律, 由体扩散控制. 温度梯度作用下, 焊点冷、热端界面Cu₆Sn₅表现出非对称性生长, 冷端界面Cu₆Sn₅生长受到促进并服从直线规律, 由反应控制, 而热端界面Cu₆Sn₅生长受到抑制并服从抛物线规律, 由晶界扩散控制. 热端Cu 基体溶解到液态Sn中的Cu原子在温度梯度作用下不断向冷端热迁移, 为冷端界面Cu₆Sn₅的快速生长提供Cu 原子通量. 计算获得250℃和280℃下Cu原子在液态Sn中的摩尔传递热Q^*分别为14.11和14.44 kJ/mol, 热迁移驱动力F_L分别为1.62×10^-19和1.70×10^-19 N.     

低相变温度垂直取向的CoPtCu/Ag纳米复合膜

采用磁控溅射(Ag/Cu/CoPt)_n多层膜先驱体结合真空退火的方法制备了一系列CoPtCu/Ag纳米复合薄膜，通过优化薄膜中Ag以及Cu的含量，成功制备出了低相变温度垂直取向的CoPtCu/Ag纳米复合膜，该膜在450℃退火即可发生相变，该温度比目前所报导的CoPtAg纳米复合膜的相变温度降低了150℃. 实验结果表明，薄膜中一定含量的Ag元素能够有效诱导薄膜的(001)取向，Cu元素的加入能有效降低薄膜的有序化温度. 对于特定组分为Co₄₀Pt₃₆Cu₈Ag₁₆的薄膜，经500℃退火后已经显示了明显的(001)取向，垂直于膜面方向上的矫顽力为5.0×10⁵A/m，并且薄膜中晶粒尺寸仅为4—5nm，为将来CoPt-L1₀有序相合金薄膜用于超高密度垂直磁记录介质打下了基础. 关键词： 磁记录材料 CoPt 纳米复合膜     

Control Al/Mg intermetallic compound formation during ultrasonic-assisted soldering Mg to Al

To prevent the formation of Al/Mg intermetallic compounds (IMCs) of Al₃Mg₂ and Al₁₂Mg₁₇, dissimilar Al/Mg were ultrasonic-assisted soldered using Sn-based filler metals. A new IMC of Mg₂Sn formed in the soldered joints during this process and it was prone to crack at large thickness. The thickness of Mg₂Sn was reduced to 22 μm at 285 °C when using Sn-3Cu as the filler metal. Cracks were still observed inside the blocky Mg₂Sn. The thickness of Mg₂Sn was significantly reduced when using Sn-9Zn as the filler metal. A 17 μm Mg₂Sn layer without crack was obtained at a temperature of 200 °C, ultrasonic power of Mode I, and ultrasonic time of 2 s. The shear strengths of the joints using Sn-9Zn was much higher than those using Sn-3Cu because of the thinner Mg₂Sn layer in the former joints. Sn whiskers were prevented by using Sn-9Zn. A cavitation model during ultrasonic assisted soldering was proposed.     

电迁移对Ni/Sn3.0Ag0.5Cu/Au/Pd/Ni-P倒装焊点界面反应的影响

本文研究了150 ℃, 1.0× 10⁴ A/cm²条件下电迁移对Ni/Sn3.0Ag0.5Cu/Au/Pd/Ni-P倒装焊点界面反应的影响. 回流后在solder/Ni和solder/Ni-P的界面上均形成(Cu,Ni)₆Sn₅类型金属间化合物. 时效过程中两端界面化合物都随时间延长而增厚, 且化合物类型都由(Cu,Ni)₆Sn₅转变为(Ni,Cu)₃Sn₄. 电迁移过程中电子的流动方向对Ni-P层的消耗起着决定性作用. 当电子从基板端流向芯片端时, 电迁移促进了Ni-P层的消耗, 600 h后阴极端Ni-P层全部转变为Ni₂SnP层. 阴极界面处由于Ni₂SnP层的存在, 使界面Cu-Sn-Ni三元金属间化合物发生电迁移脱落溶解, 而且由于Ni₂SnP层与Cu焊盘的结合力较差, 在Ni₂SnP/Cu界面处会形成裂纹. 当电子从芯片端流向基板端时, 阳极端Ni-P层并没有发生明显的消耗. 电流拥挤效应导致了阴极芯片端Ni层和Cu焊盘均发生了局部快速溶解, 溶解到钎料中的Cu和Ni原子沿电子运动的方向往阳极运动并在钎料中形成了大量的化合物颗粒. 电迁移过程中(Au,Pd,Ni)Sn₄的聚集具有方向性, 即(Au,Pd,Ni)Sn₄因电流作用而在阳极界面处聚集.     

Ag<Subscript>2</Subscript>S/Ag heteronanostructure

An Ag₂S/Ag heteronanostructure has been prepared for the first time by hydrochemical deposition. The “acanthite α-Ag₂S–argentite β-Ag₂S” phase transformation has been studied in situ by high-temperature X-ray diffraction and transmission electron microscopy. The crystal structure of argentite has been revealed. It has been found that the concentration of vacant sites in the metal sublattice of argentite exceeds 92%. The reversible acanthite–argentite transformation in the Ag₂S/Ag heteronanostructure at the application of the external bias voltage is considered.     

真空热退火温度对单相Ag2O薄膜微结构和光学性质的影响

利用直流磁控反应溅射技术在玻璃衬底上沉积了单相Ag₂O薄膜,并采用真空热退火对单相Ag₂O薄膜在不同热退火温度 (T _{A) 下进行了1 h热处理.利用X射线衍射谱、扫描电子显微镜和分光光度计研究了 T A对单相Ag2O薄膜微结构和光学性质的影响.研究结果表明, T}A= 300 ℃ 时Ag₂O薄膜中开始出现Ag纳米颗粒,且随着 T _{A的升高薄膜中Ag的含量 关键词： 2}O薄膜')" href="#">Ag₂O薄膜 热退火温度 微结构 光学性质     

An investigation on surface tensions of Pb-free solder materials

Surface tensions of some Pb-free solder systems such as Ag–Bi–Sn with cross-sections Ag/Bi = 1/1, Ag/Bi = 1/2, Ag/Bi = 2/1, In–Sn–Zn with cross-sections Sn/In = 1/1, Sn/In = 1/3 and (Ag₇Cu₃)_100?x Sn_x with cross-section Ag/Cu = 7/3 are calculated from the sub-binary surface tension data using the models, such as the Muggianu, Kohler, Toop models, Butler’s equation and Chou’s General Solution Model (GSM) at 873, 923 and 1073 K, respectively. The surface tension of In–Sn–Zn increases wavily with increasing amount of Zn and it is found that the best models are the GSM for both cross-sections in question while GSM becomes the best model for (Ag₇Cu₃)_100?x Sn_x alloy in the whole experimental range. Moreover, the surface tension of (Ag₇Cu₃)_100?x Sn_x decreases slightly with increasing amount of Sn. The Muggianu, Butler and Butler models are determined as the best models for the cross-sections in the order given above for entire measurement range, respectively, and the surface tension of Ag–Bi–Sn decreases slightly with an increasing amount of Bi and Ag but increases with increasing Sn in liquid alloys.     

Zur Supraleitung von Doppelschichten aus Ag/Sn

Superimposed films of Ag and Sn are produced on suitable conditions of condensation, so that diffusion between the layers is prevented (the condensation temperatures of Ag and Sn are 320 ?K and 150 ?K, respectively). Immediately after condensation the films are cooled to liquid helium temperature, and the transition temperatures of superconductivity are measured. These values are in agreement with a phenomenological theory of P. and R.Hilsch for sufficient thick films. Resistance measurements indicate that an alloy of Ag and Sn is formed above 280 ?K. There is only a small shift of transition temperature caused by the alloying process.     

A molecular dynamics investigation of the micro-mechanism for vacancy formation between Ag3Sn and βSn under electromigration

In this paper, the vacancy formation at the interface between different grains (Ag₃Sn and βSn) induced by electromigration was investigated from the perspective of atom diffusion. To explain the micro-mechanism of void formation near the interface, the diffusion coefficient was specifically studied here via molecular dynamics (MD) simulation. By comparing the atom diffusion rates of atoms in βSn and Ag₃Sn, a significant difference could be observed when the temperature is up to 400 K. The Sn atoms in βSn have a higher diffusion coefficient (8E ? 9 cm²/s) than atoms in Ag₃Sn (4E ? 9 cm²/s), which indicated that the void would be prone to appear in βSn near the interface. Moreover, the effect of grain size and pressure on atom diffusivity was studied. Results show that the atom diffusivity depends heavily on the grain size of Ag₃Sn. When the thickness of Ag₃Sn is increased from 4 to 12 nm, this difference is significant when the temperature is only 375 K. On the other hand, the atom diffusion character of Ag₃Sn and βSn changes substantially under constant pressure. The difference of the atom diffusion rate would be inhibited by pressure perpendicular to the interface, which indicated voids have less possibility to appear herein.     

Superconducting joint of Bi-2223/Ag superconducting tapes by diffusion bonding

61-Filaments Bi-2223/Ag superconducting tapes have been joined by diffusion bonding. The critical currents (I_Cs) of the joints are obtained by using standard four probe method under no magnetic field in the liquid nitrogen. The microstructures of the joints are evaluated by the electron microscope in electron backscatter diffraction mode and the phase compositions of the superconducting cores of the joint and the original tape are determined by X-ray diffraction (XRD). The results show diffusion bonding is effective bonding technique for HTS tapes, and the bonding time is reduced greatly from hundreds of hours to a few hours, and the bonding pressure also changes from 140–4000 MPa to 3 MPa. Furthermore, the diffusion bonding joints sustain superconducting properties, and the critical current ratios (CCR_O) of the joints are in the range of 35%–80%. Microstructures of the typical joint display a good bonding and some defects existed in traditional method are avoided. XRD results show that the phase compositions of the superconducting cores have no obvious changes before and after diffusion bonding, which offers physical and material bases for high superconducting property of the joints.     

Ag对CoPt/Ag纳米复合膜的结构与磁性的影响

采用直流磁控溅射的方法制备了一系列(CoPt/Ag)_n多层膜，然后在不同温度下 进行了退火处理，并对其结构和磁性做了初步的表征，研究了Ag的含量以及薄膜中每一单元 厚度与总厚度对退火后薄膜的结构以及磁性能的影响.结果表明，膜厚较薄时(大约20 nm)有 利于薄膜沿(001)取向生长，Ag的加入不但能够抑制CoPt晶粒的过分长大还可以诱导薄膜的( 001)取向，使退火后的薄膜在垂直于膜面方向上的矫顽力大大增强.对于特定组分为Co ₄₀Pt₄₃Ag₁₇的薄膜，经600℃退火后已经显示了明显的(001) 取向，垂直于膜面方向上的矫顽力为5.6×10⁵ A/m，饱和磁化强度为0.65T, 并 且磁滞回线具有很好的矩形度，剩磁比(s)为0.95. 关键词： 磁记录材料 磁性薄膜 CoPt/Ag纳米复合膜     

Effect of ultrasonic vibration time on the Cu/Sn-Ag-Cu/Cu joint soldered by low-power-high-frequency ultrasonic-assisted reflow soldering

Techniques to improve solder joint reliability have been the recent research focus in the electronic packaging industry. In this study, Cu/SAC305/Cu solder joints were fabricated using a low-power high-frequency ultrasonic-assisted reflow soldering approach where non-ultrasonic-treated samples were served as control sample. The effect of ultrasonic vibration (USV) time (within 6 s) on the solder joint properties was characterized systematically. Results showed that the solder matrix microstructure was refined at 1.5 s of USV, but coarsen when the USV time reached 3 s and above. The solder matrix hardness increased when the solder matrix was refined, but decreased when the solder matrix coarsened. The interfacial intermetallic compound (IMC) layer thickness was found to decrease with increasing USV time, except for the USV-treated sample with 1.5 s. This is attributed to the insufficient USV time during the reflow stage and consequently accelerated the Cu dissolution at the joint interface during the post-ultrasonic reflow stage. All the USV-treated samples possessed higher shear strength than the control sample due to the USV-induced-degassing effect. The shear strength of the USV-treated sample with 6 s was the lowest among the USV-treated samples due to the formation of plate-like Ag₃Sn that may act as the crack initiation site.     

A study of the microstructure,thermal properties and wetting kinetics of Sn–3Ag–<Emphasis Type="Italic">x</Emphasis>Zn lead-free solders

Microstructure, thermal properties and wetting kinetics of Sn–3Ag–xZn solders (x = 0.4, 0.6, 0.8, 1, 2 and 4 wt%) were systematically investigated. The results indicate that a small amount of Zn (Zn wt% ≤ 1 wt%) has a rather moderate effect on the microstructure morphology of the Sn–3Ag–xZn solders. The microstructures are composed of a β-Sn phase and the mixture of Ag₃Sn and ζ-AgZn particles. However, the β-Sn phase reduces its volume fraction in the entire microstructure and the intermetallic compounds population increases with the increasing of Zn content. The microstructure is dramatically changed with a further increase in the Zn content. The γ-AgZn phase is formed in a Sn–3Ag–2Zn solder. The ε-AgZn phase is formed in a Sn–3Ag–4Zn solder. The melting temperature and the undercooling of the Sn–3Ag–xZn solder alloys decrease with the increase in Zn content, reach to a minimum value when the content of Zn is 1 wt%, and then increase with further increase in Zn content. The Sn–3Ag–1Zn demonstrates the minimum value of 228.13 °C in the melting temperature and 13.87 °C in undercooling. The wetting kinetics of the main spreading stage features the power law of R ⁿ  ~ t (n = 1), which is controlled by chemical reactions at the triple line.     

溅射法制备Ag/Ag2O超微粒子的分析

用Ｘ射线衍射、Ｘ射线光电子能谱、透射电子显微镜和差示扫描量热法对溅射法制备的Ａｇ超微粒子的晶体学结构、表面组成、微粒形态和热力学性质进行了分析。结果表明，所制备的微粒为内部为Ａｇ、表面为Ａｇ₂Ｏ的两相微粒，以及单一的Ａｇ₂Ｏ微粒，粒径在１０ｎｍ以上的微粒没有确定的外形，粒径在１０ｎｍ以下的微粒为球形。微粒有不同于块体金属Ａｇ的异常热效应。到４０天时，沉积在碳膜上的Ａｇ，Ａｇ₂Ｏ两相微粒有一部份还原形成了单一的金属Ａｇ超微粒子。 关键词：