Pseudogap in doped Mott insulators is the near-neighbor analogue of the Mott gap

We show that the strong-coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single-particle spectrum below a characteristic temperature. The pseudogap arises because any singly occupied site not immediately neighboring a hole experiences a maximum energy barrier for transport equal to t(2)/U, t the nearest-neighbor hopping integral and U the on-site repulsion. The resultant pseudogap cannot vanish before each lattice site, on average, has at least one hole as a near neighbor. The ubiquity of this effect in all doped Mott insulators suggests that the pseudogap in the cuprates has a simple origin.     

Quantum phases in a doped Mott insulator on the Shastry-Sutherland lattice

We propose the projected BCS wave function as the ground state for the doped Mott insulator SrCu2(BO3)2 on the Shastry-Sutherland lattice. At half filling this wave function yields the exact ground state. Adding mobile charge carriers, we find a strong asymmetry between electron and hole doping. Upon electron doping an unusual metal with strong valence bond correlations forms. Hole doped systems are d-wave resonating valence bond superconductors in which superconductivity is strongly enhanced by the emergence of spatially varying plaquette bond order.     

On the phase diagram of a two-dimensional electron–hole system

The phase diagram for a system of spatially separated electrons and holes in coupled quantum wells or graphene double layers is studied in the framework of a BCS-like mean-field approach and a Landau expansion in terms of the pairing order parameter. We find a second order transition between an electron–hole plasma and a BCS phase, as well as a first-order transition between the BCS phase and a bosonic Mott phase of tightly bound electron–hole pairs without phase coherence. The electron–hole plasma exists at low and at high densities for weak interaction, the BCS phase at moderate density and the Mott phase at high density and strong interaction.     

Crystallization of electrons confined to a lattice

A necessary condition for electron crystallization is the dominance of the electronic Coulomb repulsion as compared with the kinetic energy. We show that 4f systems are good candidates for electron or hole crystallization to occur since the small radius of the 4f shell leads to small hybridizations and hence kinetic energy of the f electrons. Crystallization may take place in lattices with several equivalent 4f sites per unit cell when the electron or hole number is less than the number of sites. We give evidence that charge ordering in Yb₄As₃ is an example of the mechanism considered here. We also compare it with those considered by Wigner, Verwey, Mott and Hubbard.     

Electrochemical studies on lead iodide

The total d.c. electrical conductivity of undoped PbI₂ was measured as a function of iodine potential in the region 150–300°C to determine the nature of charge carriers in PbI₂. Results indicate that PbI₂ is an ionic conductor with electron holes as the minority carriers in this temperature range. Electrical polarization experiments were also performed to determine the electron hole conductivity and concentrations, mobilities and chemical diffusion coefficients of electron holes in undoped PbI₂ between 150 and 300°C.     

Extension of the Mott–Gurney Law for a Bilayer Gap

Steady drift states of an electron flow in a planar gap filled with a bilayer dielectric have been considered. Exact mathematical formulas have been derived that describe the distributions of the electrostatic potential and space charge limited electron flow current (extended Mott–Gurney law for a bilayer diode).     

EPR of Charge Carriers Stabilized at the Surface of Metal Oxides

Some cases of formation and stabilization of charge carriers (electron and holes) at the surface of solid oxides are discussed. Charge carriers can be simultaneously or independently stabilized at the surface metal oxides. In the former case, they usually derive from a process of charge separation in the solid triggered by above band gap irradiation. In the second case, the charge carrier isolation is the result of a chemical alteration of the stoichiometric equilibrium of the solid either by matter addition or by effect of chemical impurities (valence induction). Electron paramagnetic resonance (EPR) is highly suited to monitor the process of charge separation and to characterize electron or hole centers stabilized in the solid or at its surface. In this paper examples of trapped electron and/or trapped hole centers as detected by continuous-wave EPR at the surface of simple binary oxides are discussed with particular emphasis to the formation mechanism, the EPR parameters and the chemical reactivity.     

Critical behaviour near the metal-insulator transition of a doped Mott insulator

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical potential in the change from hole to electron doping, for U larger than a critical value U _c, has been calculated analytically and is found to be in good agreement with the results of numerical methods. We have also derived analytic expressions for the compressibility, the quasiparticle weight, the double occupancy and the local spin susceptibility near half-filling as functions of the on-site Coulomb interaction and the doping. Received 15 March 2001 and Received in final form 22 May 2001     

Direct observation of melted Mott state evidenced from Raman scattering in 1T-TaS_2 single crystal

The evolution of electron correlation and charge density wave(CDW)in 1T-TaS_2 single crystal has been investigated by temperature-dependent Raman scattering,which undergoes two obvious peaks of A_(1g) modes about 70.8 cm~(-1) and 78.7 cm~(-1) at 80 K,respectively.The former peak at 70.8 cm~(-1) is accordant with the lower Hubbard band,resulting in the electron-correlation-driven Mott transition.Strikingly,the latter peak at 78.7 cm~(-1) shifts toward low energy with increasing the temperature,demonstrating the occurrence of nearly commensurate CDW phase(melted Mott phase).In this case,phonon transmission could be strongly coupled to commensurate CDW lattice via Coulomb interaction,which likely induces appearance of hexagonal domains suspended in an interdomain phase,composing the melted Mott phase characterized by a shallow electron pocket.Combining electronic structure,atomic structure,transport properties with Raman scattering,these findings provide a novel dimension in understanding the relationship between electronic correlation,charge order,and phonon dynamics.     

Ultrafast melting of a charge-density wave in the Mott insulator 1T-TaS2

Femtosecond time-resolved core-level photoemission spectroscopy with a free-electron laser is used to measure the atomic-site specific charge-order dynamics of the charge-density?wave in the Mott insulator 1T-TaS2. After strong photoexcitation, a prompt loss of charge order and subsequent fast equilibration dynamics of the electron-lattice system are observed. On the time scale of electron-phonon thermalization, about 1?ps, the system is driven across a phase transition from a long-range charge ordered state to a quasiequilibrium state with domainlike short-range charge and lattice order. The experiment opens the way to study the nonequilibrium dynamics of condensed matter systems with full elemental, chemical, and atomic-site selectivity.     

Theoretical study of electronic structure and excited states properties of two dyes for dye-sensitized solar cells

Two conjugated organic dyes comprising the benzo[b]furan moieties as the electron donor and cyanoacetic acid moieties as the electron acceptor/anchoring groups have been investigated using a quantum chemical method. The molecular equilibrium geometries and ground state character were studied using density functional theory. Absorption spectra were obtained using time-dependent density functional theory and semiempirical ZINDO. The nature of absorption spectra was further studied using 2D and 3D real-space analysis; here, 2D real-space analysis showed electron–hole coherence, and 3D real-space analysis showed intramolecular charge transfer during photo-excitation. As important parameters, excited state oxidation potential and driving force energy were obtained to reveal the relationship between molecular structure and performance of two compounds.     

Breakup of the Fermi surface near the mott transition in low-dimensional systems

We investigate the Mott transition in weakly coupled one-dimensional (1D) fermionic chains. Using a generalization of dynamical mean field theory, we show that the Mott gap is suppressed at some critical hopping t{ perpendicular}{c2}. The transition from the 1D insulator to a 2D metal proceeds through an intermediate phase where the Fermi surface is broken into electron and hole pockets. The quasiparticle spectral weight is strongly anisotropic along the Fermi surface, both in the intermediate and metallic phases. We argue that such pockets would look like "arcs" in photoemission experiments.     

Theory of RIXS in strongly correlated electron systems: Mott gap excitations in cuprates

We theoretically examine the momentum dependence of resonant inelastic X-ray scattering (RIXS) spectrum for one-dimensional and two-dimensional cuprates based on the single-band Hubbard model with realistic parameter values. The spectrum is calculated by using the numerical diagonalization technique for finite-size clusters. We focus on excitations across the Mott gap and clarify spectral features coming from the excitations as well as the physics behind them. Good agreement between the theoretical and existing experimental results clearly demonstrates that the RIXS is a potential tool to study the momentum-dependent charge excitations in strongly correlated electron systems.     

电荷转移型Hubbard模型的相图

用玻色化技术和高斯波泛函变分理论研究了电荷转移型Hubbard模型.通过自旋密度波和电荷密度波的位相结构的变化，并结合其相应能隙的变化，得到以下结论：系统的Ising相变与Mott相变不重合，中间有一个SDI(spontaneouslydimerizedinsulating)的过渡相.在BI(band-insulator)相，自旋密度波与电荷密度波都具有能隙，而在MI(Mott-insulator)相，电荷密度波具有能隙，自旋密度波没有能隙. 关键词： Hubbard模型 电荷密度波 自旋密度波 相图     

Novel aspects of charge and lattice dynamics in the hole-doped manganite La0.67Sr0.33MnO3

Previous infrared studies on the hole-doped manganite La_0.67Sr_0.33MnO₃ (LSMO) have analysed its charge dynamics in terms of one type of charge carrier despite evidence of both electron and hole Fermi surfaces. Here, we investigate the charge dynamics of an LSMO film with infrared and optical spectroscopy in order to provide a complete picture of metallic conduction. In the ferromagnetic metallic phase, the low-frequency optical conductivity is best explained by a two-carrier model comprising electrons and holes. The number densities, effective masses and relaxation response of the delocalized electrons and holes are quantified. We discover that only one-third of the doped charges are coherent and contribute to the dc transport. Metallic LSMO cannot be classified as a bad metal at low temperatures because the mean free path of the coherent, mobile charge carriers exceeds the Ioffe–Regel–Mott limit. The incoherent spectral response of the doped charges manifests itself as a broad mid-infrared feature. We also report the first observation of splitting of an infrared-active phonon due to local Jahn–Teller distortion in the vicinity of the thermally driven transition to the nonmetallic, paramagnetic phase in LSMO. This demonstrates that infrared spectroscopy is capable of detecting the presence of local lattice distortions in correlated electron systems.     

Charge transport in the insulating state of (DMe-DCNQI)2Li above T(SP): a possible fractional charge soliton conduction with +/-1 / 2e

A spin-Peierls system (DMe-DCNQI)2Li is studied with W-band electron paramagnetic resonance (EPR) ( approximately 94 GHz) to unveil a charge transport mechanism in the insulating 4k(F) charge density wave state above T(SP). The electron hopping between the neighbor DCNQI columns provides an additional broadening of the EPR linewidth, since the neighbor columns are generally nonequivalent to each other with respect to g shift. The obtained intercolumn hopping rates lead us to the conclusion that the electron hopping to a hole soliton carrying a fractional charge of e / 2 in the neighbor column dominates the intercolumn charge transport.     

Momentum-resolved charge excitations in a prototype one-dimensional mott insulator

We report momentum-resolved charge excitations in a one-dimensional (1D) Mott insulator studied using high resolution inelastic x-ray scattering over the entire Brillouin zone for the first time. Excitations at the insulating gap edge are found to be highly dispersive (momentum dependent) compared to excitations observed in two-dimensional Mott insulators. The observed dispersion in 1D cuprates ( SrCuO2 and Sr2CuO3) is consistent with charge excitations involving holons which is unique to spin-1/2 quantum chain systems. These results point to the potential utility of momentum-resolved inelastic x-ray scattering in providing valuable information about electronic structure of strongly correlated insulators.     

Photoluminescent detection of the impurity band in Si(P)

A new photoluminescent band in the spectra of phosphorus-doped silicon at concentrations near the Mott transition is reported. It is attributed to the recombination of an electron in the impurity band with a free hole.     

Hawking Radiation of Charged and Magnetized Particles from the Kerr-Newman-Kasuya Black Hole via Covariant Anomaly

Hawking radiation of a particle with electric and magnetic charges from the Kerr-Newman-Kasuya black hole is discussed in the dragging coordinate frame via the anomaly cancellation method, initiated by Robinson and Wilczek. We redefine an equivalent charge of the charged and magnetized black hole by reconstructing the electromagnetic field tensor. We adopt the refined covariant anomaly cancellation method to determining the compensating fluxes of charge flow and energy momentum tensor, which are proved to precisely match with those of the 2-dimensional blackbody radiation at the Hawking temperature with an appropriate chemical potential.     

Vanishing of the Mott transition in semiconductor nanocrystals

The dynamics of the system of photoexcited electron–hole pairs in semiconductor nanocrystals of different size with increasing excitation intensity was experimentally studied by utilizing the luminescence spectra of semiconductor-doped glasses in order to elucidate the peculiarities of many-body effects in structures approaching the zero-dimensional limit. Vanishing of effects causing the Mott transition in bulk crystals was observed with decreasing nanocrystal radius, and a new type of transformation of excitons to unbound electron–hole pairs was shown to take place in nanocrystals where the energy shift for electrons and holes due to quantum confinement becomes comparable with the exciton binding energy.