Electrodiffusion phenomena in C<Subscript>60</Subscript> thin films

As part of our ongoing research program to produce semiconductor devices based on C₆₀ thin films, we report here on our first attempts at the intercalative doping of C₆₀ thin films through the diffusion of metals. Two techniques were employed: (a) chemically induced counter electrodiffusion of Cu and I₂ into a C₆₀ matrix and (b) Au diffusion under the action of an external electric field.     

Absorption spectrum of thin K<Subscript>2</Subscript>CdI<Subscript>4</Subscript> films

The absorption spectrum of thin films of a new compound, K₂CdI₄, was studied. It was established that this compound belongs to direct-bandgap dielectrics and that its low-frequency electronic and excitonic excitations are localized in CdI ₄ ^2? structural blocks of the crystal lattice. It was found that, in M₂CdI₄ compounds (M = K, Rb, Cs), the bandgap width E _g grows and the spin-orbit splitting of the valence band top decreases with increasing ionic radius of the alkali metal.     

Thermally stimulated desorption of C<Subscript>60</Subscript> and C<Subscript>70</Subscript> fullerenes from rigid-chain polyimide films

Polyimide-fullerene composite thin coatings are investigated using thermal desorption mass spectrometry in the temperature range 20–800°C. It is found that, at temperatures below the temperature of decom-position of the polymer matrix, thermally stimulated desorption of fullerene molecules is limited by the diffusion of fullerene molecules in the matrix. The diffusion coefficients and activation energies of diffusion of C₆₀ and C₇₀ fullerene molecules are determined from the experimental data on thermally stimulated desorption in the framework of several approaches. It is revealed that the diffusion of C₇₀ molecules in the polyimide matrix is more hindered than the diffusion of C₆₀ molecules in the same matrix.     

Electronic absorption spectrum of thin K<Subscript>2</Subscript>ZnI<Subscript>4</Subscript> films

The absorption spectrum of thin K₂ZnI₄ films has been investigated in the range of 3–6 eV at temperatures from 90 to 340 K. It is established that this compound belongs to direct-gap insulators; low-frequency exciton excitations are localized in the ZnI₄ lattice layers and have a quasi-two-dimensional character. The spectral analysis revealed the existence of two K₂ZnI₄ modifications, which presumably belong to the monoclinic (I) and orthorhombic (II) phases. The temperature dependences of the spectral position and halfwidth of the low-frequency exciton band in K₂ZnI₄ revealed the existence of first-order phase transitions at 215 and 225 K in the monoclinic and orthorhombic phases, respectively.     

Electronic absorption spectrum of Cs<Subscript>2</Subscript>ZnI<Subscript>4</Subscript> thin films

The absorption spectrum of Cs₂ZnI₄ thin films in the energy range 3–6 eV at temperatures from 90 to 340 K has been investigated. It is established that this compound belongs to direct-gap insulators. Low-frequency exciton excitations are localized in ZnI₄ structural elements of the lattice. Phase transitions at 280 K (paraelectric phase ? incommensurate phase), 135 K (incommensurate phase ? monoclinic ferroelastic phase), and 96 K (monoclinic phase ? triclinic ferroelastic phase) have been found from the temperature dependences of the spectral position and halfwidth of the low-frequency exciton band. Additional broadening of the exciton band is observed for ferroelastic phases; it is likely to be due to exciton scattering from strain fluctuations near domain walls.     

UV absorption spectra of thin films of Cs<Subscript>2</Subscript>CdI<Subscript>4</Subscript> and Rb<Subscript>2</Subscript>CdI<Subscript>4</Subscript> ferroelectrics

Thin films of M₂CdI₄ ferroelectrics (M=Cs, Rb) of orthorhombic structure were synthesized, and their electronic optical spectrum was studied. It was established that both compounds belong to direct-gap dielectrics and that their low-frequency excitons are localized on a sublattice made up of (CdI₄)^2? tetrahedra. The temperature dependence of the exciton band parameters was studied for Cs₂CdI₄ within the temperature interval 90–420 K. The phase transitions occurring in this interval manifest themselves as breaks in the temperature behavior of the band spectral positions and weak peaks in the halfwidth and oscillator strength.     

Stepwise computational synthesis of fullerene C<Subscript>60</Subscript> derivatives. Fluorinated fullerenes C<Subscript>60</Subscript>F<Subscript>2<Emphasis Type="Italic">k</Emphasis></Subscript>

Reactions of fullerene C₆₀ with atomic fluorine are studied by the unrestricted broken spin symmetry Hartree-Fock (UBS HF) approach implemented in semiempirical codes based on the AMI technique. The calculations are focused on a successive addition of a fluorine atom to the fullerene cage following the indication of the highest chemical susceptibility of the cage atom, which is calculated at each step. The proposed computational synthesis is based on the effectively unpaired-electron concept of the chemical susceptibility of fullerene atoms. The obtained results are analyzed from the standpoints of energy, symmetry, and the composition abundance. A good fitting of the data to experimental findings proves a creative role of the suggested synthetic methodology.     

Cluster <Emphasis Type="Italic">ab initio</Emphasis> calculations for the C<Subscript>60</Subscript>F<Subscript>24</Subscript>, C<Subscript>60</Subscript>Cl<Subscript>24</Subscript>, and C<Subscript>60</Subscript>Br<Subscript>24</Subscript> halofullerenes

This paper reports on ab initio cluster calculations of the equilibrium geometry, electronic structure, and vibrational properties of the C₆₀, C₆₀F₂₄, C₆₀Cl₂₄, C₆₀Br₂₄ molecules.     

Electric and magnetic properties of CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/Pb(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript> bilayer thin films prepared by pulsed-laser deposition

CoFe₂O₄ (CFO) thin film with highly (111)-preferential orientation was first deposited on the silicon substrate by a pulsed-laser deposition, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) layers were deposited with different oxygen pressures to form the bilayer CFO/PZT nanocomposite thin films. X-ray diffraction showed that the PZT preferential orientation was strongly dependant on the oxygen pressure. The smooth film surface was obtained after depositing the CFO and PZT layers. The bilayer thin films exhibit good ferromagnetic and ferroelectric properties, and a low leakage current density of 0.004 μA/cm² at 50 kV/cm. The leakage current density curves show loops for the electric polarized field when the electric field reverses. PACS 77.84.Lf; 75.80+q; 81.05.Zx; 81.15.Fg     

Study of third-and fifth-order nonlinear optical processes in thin C<Subscript>60</Subscript> films

The nonlinear refraction in thin films of fullerene C₆₀ (100 nm) is studied by the Z-and RZ-scan methods using the second harmonic of a picosecond Nd:YAG laser (λ = 532 nm, τ = 55 ps). The combined effect of n₂ (self-focusing of laser radiation) and n₄ (self-defocusing) is analyzed. Mechanisms responsible for the nonlinear refraction in films are discussed.     

Raman scattering by Hg<Subscript>2</Subscript>F<Subscript>2</Subscript> polycrystals

The Raman spectra of Hg₂F₂ polycrystals are experimentally measured for the first time. The spectra of Hg₂F₂ are interpreted using X-ray diffraction analysis and group-theoretical treatment. The results obtained are discussed in comparison with the spectra of Hg₂Hal₂ crystals.     

Entanglement in the linear-chain Heisenberg antiferromagnet Cu(C<Subscript>4</Subscript>H<Subscript>4</Subscript>N<Subscript>2</Subscript>)(NO<Subscript>3</Subscript>)<Subscript>2</Subscript>

Quantum correlations are generally impossible to address directly in bulk systems. Quantum measures extended only to a few number of parties can be discussed in practice. In the present work we study a cluster of spins belonging to a compound whose structure is that of a quantum magnet. We reproduce at a much smaller scale the experimental outcomes and then we study the role of quantum correlations there. A macroscopic entanglement witness has been introduced in order to reveal quantum correlations at nonzero temperatures. The critical point beyond which entanglement is zero is found at T _c = 15 K.     

Thermodynamic properties and structure of oxyfluorides Rb<Subscript>2</Subscript>KMoO<Subscript>3</Subscript>F<Subscript>3</Subscript> and K<Subscript>2</Subscript>NaMoO<Subscript>3</Subscript>F<Subscript>3</Subscript>

According to the results of calorimetric and structural studies, the Fm{ie1202-1}m phase in K₂NaMoO₃F₃ remains stable at least to 100 K. No ferroelectric transformation assumed earlier has been revealed in a series of Rb₂KMoO₃F₃ samples prepared using various technologies. Only a phase transition of nonferroelectric origin has been observed near 195 K, and its thermodynamic characteristics have been determined. An analysis of the stability of the cubic structure of molybdenum fluorine-oxygen elpasolites-cryolites has been performed in the framework of the hypothesis on strengths of interatomic bonds. The barocaloric effect in Rb₂KMoO₃F₃ has been estimated.     

X-ray emission and X-ray photoelectron spectroscopic studies of fullerene fluoride C<Subscript>60</Subscript>F<Subscript>24</Subscript>

The structure of the fullerence fluoride C₆₀F₂₄ of the T _h symmetry contains two types of chemically different carbon atoms, namely, atoms of isolated double bonds and atoms of CF groups. X-ray photoelectron and x-ray emission spectroscopic studies of C₆₀F₂₄ revealed a difference in the widths of the x-ray bands corresponding to these types of atoms. Nonempirical quantum-chemical calculations performed for C₅₉NF ₂₄ ⁺ ions with a hole in the C 1s core level of the fullerence fluoride showed that the difference in the bandwidths may be due to the fact that the vibrational states of the system are different when 1s electrons are removed from chemically nonequivalent atoms.     

Annealing study of electrodeposited CuInSe<Subscript>2</Subscript> and CuInS<Subscript>2</Subscript> thin films

In this study CuInSe₂ and CuInS₂ thin films were prepared onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis. The annealing effects on electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe₂/CuInS₂ showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. Mott–Schottky measurements were used to assess the conductivity type of the films and their carrier concentration. The prepared samples underwent an etching process to remove the binary accumulated Cu_2?x(Se,S) phases shown in FESEM pictures. This etching process has shown a noticeable decrease in both, the flat band potential, V_fb (V), and the number of acceptors, N_A (cm^?3) in selenized CuInSe₂ and sulfurized CuInS₂ samples.     

Sub-unit cell layer-by-layer growth of Fe<Subscript>3</Subscript>O<Subscript>4</Subscript>, MgO,and Sr<Subscript>2</Subscript>RuO<Subscript>4</Subscript> thin films

The use of oxide materials in oxide electronics requires their controlled epitaxial growth. Recently, it was shown that Reflection High Energy Electron Diffraction (RHEED) allows the growth of oxide thin films to be monitored, even at high oxygen pressures. Here, we report the sub-unit cell molecular or block layer growth of the oxide materials Sr₂RuO₄, MgO, and magnetite using Pulsed Laser Deposition (PLD) from stoichiometric targets. Whereas a single RHEED intensity oscillation is found to correspond to the growth of a single unit cell for perovskites such as SrTiO₃ or doped LaMnO₃, in materials where the unit cell is composed of several molecular layers or blocks with identical stoichiometry, sub-unit cell molecular or block layer growth is established, resulting in several RHEED intensity oscillations during the growth of a single unit cell. PACS 61.14.Hg; 74.76.Db; 75.70.-i; 81.15.Fg     

Magnetotransport in thin epitaxial Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> films

The magnetoconductivity of thin Bi₂Se₃ films covered by a protective Se layer and grown at (111) BaF₂ substrates is studied. It is shown that the negative magnetoconductivity observed at low magnetic fields and caused by the effect of weak antilocalization, as well as the Shubnikov?de Haas oscillations at higher fields, is determined only by the magnetic field component perpendicular to the film plane. The obtained experimental results can be reasonably interpreted under the assumption that the studied films exhibit two-dimensional topologically protected electron states. Moreover, the contribution of these states to the total conductivity turns out to be the dominant one.     

Pulsed laser deposition of BaGa<Subscript>2</Subscript>O<Subscript>4</Subscript>

This paper reports the first results obtained on monobarium gallate thin films grown on silicon and platinum coated substrates by pulsed laser deposition. The influence of oxygen background pressure and substrate (or post-annealing) temperature on the film properties was studied. The films were characterized by XRD, RHEED, AFM, photoelectron and electrical impedance spectroscopy. The structure analysis showed that the films crystallized into a hexagonal phase, most probably into (metastable) α-BaGa₂O₄. Depending on deposition conditions, films with different (from nearly epitaxial to polycrystalline) textures were obtained.