PE－LiTaO_3波导中的切伦科夫培频

对用质子交换法生长的ＬｉＴａＯ３（ＰＥ－ＬｉＴａＯ３）波导特性进行了研究，并利用该种波导实现了由１．０６μｍ到０．５３μｍ的切伦科夫倍频转换（ＣＳＨＧ），转换效率为１２２％／Ｗ·ｃｍ２．倍频光束质量好，垂直波导面方向的发散角度为１．３ｍｒａｄ，平行波导面方向的发散角度为３．３ｍｒａｄ．     

He^＋离子注入LiNbO3晶体波导的制备及其性能研究

报道了液氮温度下Ｈｅ＾＋离子注入ＬｉＮｂＯ３波导的制备，采用棱镜耦合法测量了波导退火前后导模的有效折射率，计算了波导层折射率的分布和晶体中Ｈｅ＾＋离子的射程分布和损伤分布，两者吻合得较好。     

He（2^3S）与N2O（X）Penning电离中的N2O^＋（A^2Σ^＋）生成速率及相…

在分子束条件下测量了Ｈｅ（２＾３Ｓ）＋Ｎ２Ｏ（Ｘ）→Ｎ２Ｏ＾＋（Ａ＾２Σ＾＋）＋Ｈｅ（＾１Ｓｏ）＋ｅ＾－反应的Ｐｅｎｎｉｎｇ电离光学光谱，求得了Ｎ２Ｏ＾＋（Ａ＾２Σ＾＋）态的初生态相对振动布居。以Ｈｅ（２＾３Ｓ）＋Ｎ２（Ｘ）→Ｎ＾＋２（Ｂ＾２Σ＾＋ｕ）＋Ｈｅ（＾１Ｓｏ）＋ｅ＾－为参考反应，测量了Ｈｅ（２＾３Ｓ）＋ＢＮ２Ｏ＾＋（Ａ＾２Σ＾＋）＋Ｈｅ（＾１Ｓｏ）＋ｅ＾－反应的速率常数ＫＮ２Ｏ＾＋（Ａ）     

偶氮基染料掺杂薄膜的双光子图象存储

研究了偶氮基染料掺杂薄膜ＭＯ－ＰＶＡ和ＥＯ－ＰＶＡ的双光子存储特性。在对薄膜用Ａｒ＾＋激光作预激发下实现了Ｈｅ－Ｎｅ激光的红光存储。获得了实时和短时存储照片。光电记录存储曲线，分析了双光四能级系统的存储机制。实现确定了最佳预激发功率约为０．２８Ｗ／ｃｍ＾２，最小Ｈｅ－Ｎｅ光可存储功率密度低于０．２Ｗ／ｃｍ＾２。     

质子交换和热退火LiTaO3光波导特性

本文报道了质子交换ＬｉＴａＯ３光波导层的晶格常数变化、质子浓度分布和折射率分布以及红外吸收谱等的测量方法和结果，并与热退火后的测量结果进行了比较。实验结果表明：热退火处理的光波导其非寻常折射率的增高不依赖于质子浓度。     

稀土离子Eu3+掺杂Y2SiO5晶体的光谱和结构研究

用５１４．５ｎｍ、４８８．０ｎｍ的Ａｒ＾＋激光和４４１．６ｎｍ的Ｈｅ－Ｃｄ激光激发Ｅｕ＾２＋：Ｙ２ＳｉＯ５晶体的获得了一系列窄带荧光谱线,其中双重谱线结构源于Ｅｕ３＾＋离子发光中在该材料中占据两种不等价的非对称光学格位,测得了Ｅｕ＾３＋：Ｙ２ＳｉＯ５的Ｘ射线多晶衍射谱的面间距数据;计算了晶格常数和晶在角度,通过和非掺杂Ｙ２ＳｉＯ５晶体数据的比较,探讨了Ｅｕ＾２＋和Ｙ２ＳｉＯ５格位的相互影响。     

铁酸盐的水热氧化晶化法制备及其生成条件研究

研究了空气氧化Ｍ＾２＋（Ｍ＝Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ）和Ｆｅ＾２＋的碱性悬浮液制备铁酸盐ＭＦｅ２Ｏ４的条件，考察了原料配比、ｐＨ值、氧化温度、氧化时间对生成ＭＦｅ２Ｏ４的影响。利用ＸＲＤ及ＳＥＭ检测氧化过程中沉淀物的形态和结构表明，在３４３￣３５８Ｋ和Ｒ＝２ＯＨ＾－／（Ｍ＾２＋Ｆｅ＾２＋）＝１．０、Ｍ＾２／Ｆｅ＾２＋＝０．５（摩尔比）下用３００ｍＬ／ｈ的空气氧化Ｍｘ／３Ｆｅ１－ｘ／３（ＯＨ）２悬浮液     

NO2体系的分子动力学研究（二）

基于多体展式方法所导出的ＮＯ２（Ｘ２Ａ１）的分析势能函数［１］，用准经典的Ｍｏｎｔｅ－Ｃａｒｌｏ轨迹法研究了Ｏ（３Ｐｇ）＋ＮＯ（Ｘ２ＩＩ）和Ｎ（３Ｄｕ）＋Ｏ２（Ｘ３∑－ｇ）的原子与分子反应动力学。研究结果指出，反应Ｏ（３Ｐｇ）＋ＮＯ（Ｘ３ＩＩ）→ＮＯ２（Ｘ２Ａ１）的阈能值约为２ｋｃａｌ／ｍｏｌ，而反应Ｎ（２Ｄｕ）＋Ｏ２（Ｘ３∑－ｇ）→ＮＯ（Ｘ３ＩＩ）＋Ｏ（３Ｐｇ）是无阈能的。对后者，随初始平动能的增加，反应产物的向前散射减少，在１６０ｋｃａｌ／ｍｏｌ时达到极小，之后又缓慢增加。     

BF+2注入加固硅栅PMOSFET的研究

系统地研究了ＢＦ＋２ 注入硅栅Ｐｃｈａｎｎｅｌ ｍｅｔａｌｏｘｉｄｅｓｅｍｉｃｏｎｄｕｃｔｏｒ ｆｉｅｌｄｅｆｆｅｃｔ ｔｒａｎｓｉｓｔｏｒ（ＰＭＯＳＦＥＴ） 阈值电压漂移与γ辐照总剂量之间的关系,深入地探讨了ＢＦ＋２ 注入抗γ辐射加固的机理．结果表明,ＢＦ＋２ 注入对硅栅Ｐｃｈａｎｎｅｌ ｍｅｔａｌｏｘｉｄｅｓｅｍｉｃｏｎｄｕｃｔｏｒ（ＰＭＯＳ） 在γ辐照下引起的阈值电压漂移具有很强的抑制作用,ＢＦ＋２ 注入加固硅栅ＰＭＯＳ 的最佳注入剂量范围为５ ×１０１４ —２ ×１０１５ ｃｍ － ２ ,分布在ＳｉＯ２／Ｓｉ 界面的Ｆ 原子抑制了γ辐照下在ＳｉＯ２／Ｓｉ 界面产生的氧化物陷阱电荷和界面陷阱电荷可能是ＢＦ＋２ 注入加固硅栅ＰＭＯＳＦＥＴ 的主要原因     

关于氦团簇离子He^＋4的离解能和相对稳定结构

本文应用排列通道量子力学方法，对氦团族离子Ｈｅ＾＋４的四种可能构型进行了研究，发现Ｈｅ＾＋４的相对稳定结构为“Ｔ”形构型，对应Ｈｅ＾＋４→Ｈｅ＾＋３＋Ｈｅ的离解能为０．４２ｋｃａｌ／ｍｏｎ。该结果同其它作者的ａｂ ｉｎｉｔｉｏ结果相吻合。     

The Observation of Photorefractive Effect of Prism Coupling in Ion-implanted Fe-doped LiNbO_3 Plannar Waveguide

1.IntroductionTheFe--dopedLithiumNiobate(LiNbO3)crystalhavebeenintensitystudiedbecauseoftheirimprovedphotorefractivepropertiesandutilizationinawiderangeofapplicationsinopticalstorage,opticalphaseconjugationandtwo-andfour--wavemixingtechniques.ThewaveguidefabricatedwithsuchcrystalisdesirablebecauseitprovidescomP8tibilitywithotherminiaturizedintegrateddevicescommonlyusedtoday,particularwithlaserdiodesandfibergeometries.Comparingtootherwaveguidefabricationtechniques,suchasmetaldiffusionorionex…     

Modal Characterization of a Planar Waveguide in Bismuth Borate Crystal

We report on the fabrication and modal property studies of planar waveguide structure in x-cut bismuth borate biaxial crystal formed by He ion implantation with triple energies. The prism coupling method is used to measure the effective refractive indices of this waveguide. We reconstruct the refractive index distribution of this waveguide by the reflectivity calculation method. Our results indicate that a broadened optical barrier is produced by the multiple He ion implantations. The so-called tunneling effect of the non-stationary mode in this type of barrier waveguide is presented by the well-known finite difference beam propagation method.     

Planar optical waveguide in Cu-doped potassium sodium strontium barium niobate crystal formed by mega-electron-volt He-ion implantation

The first planar optical waveguide to the authors' knowledge has been formed in Cu-doped potassium sodium strontium barium niobate crystal by mega-electron-volt He(+) implantation. Both TE and TM modes are observed. The profiles of the ordinary and the extraordinary refractive indices are deduced from dark-line mode spectroscopy. The results show that the mega-electron-volt He implantation results in a decrease in refractive index in barriers for both n(o) and n(e), but for n(e) there is an obvious increase in the waveguide region. From an experiment in photorefractive two-wave mixing, it is found that the erasure time for two-wave mixing is prolonged by ion implantation.     

Cu2+离子注入的石英光波导的特性研究

利用Cu2+离子注入的方式在熔融石英和石英晶体上分别制备了平面光波导结构.通过棱镜耦合实验测试了两种光波导的导模特性,结果表明:在同样的注入条件下熔融石英上形成了增加型的光波导结构,而石英晶体上形成了位垒型的光波导结构.研究了退火温度对两种光波导导模折射率的影响,熔融石英光波导中导模的折射率随着退火温度的升高而降低,而石英晶体光波导中导模的折射率随着退火温度的升高先增加后降低.为了进一步分析离子注入两种材料形成光波导的微观机理,利用SRIM模拟了Cu2+离子注入两种材料的电子能量损失和核能量损失,并且模拟了两种光波导结构的折射率分布.模拟结果表明:熔融石英光波导的主要形成原因是离子注入表面的折射率大于其体材料的折射率,而石英晶体光波导的主要形成原因是离子射程末端的折射率小于其体材料的折射率.因此,在熔融石英光波导的形成中电子能量损失起主要作用,而在石英晶体光波导的形成中核能量损失起主要作用.     

Planar waveguides in neodymium-doped calcium niobium gallium garnet crystals produced by proton implantation

In this work, the fabrication and optical properties of a planar waveguide in a neodymium-doped calcium niobium gallium garnet(Nd:CNGG) crystal are reported. The waveguide is produced by proton(H~+) implantation at 480 ke V and a fluence of 1.0×10~(17) ions/cm~2. The prism-coupling measurement is performed to obtain the dark mode of the waveguide at a wavelength of 632.8nm. The reflectivity calculation method(RCM) is used to reconstruct the refractive index profile. The finite-difference beam propagation method(FD-BPM) is employed to calculate the guided mode profile of the waveguide.The stopping and range of ions in matter 2010(SRIM 2010) code is used to simulate the damage profile induced by the ion implantation. The experimental and theoretical results indicate that the waveguide can confine the light propagation.     

Double optical waveguide in Cu-doped KNSBN crystal formed by MeV boron ion implantation

We reported for what is to be believed the first time a double optical waveguide in a Cu-doped potassium sodium strontium barium niobate (KNSBN) crystal formed by double boron ion implantation. The energy and dose of B⁺ and B³⁺ ions were (3+6) MeV and (2+2)×10¹⁴ ions/cm², respectively. The refractive index profile of the waveguide showed a double-barrier confined shape, which suggested the formation of a two-layer waveguide structure. The two waveguide layers were with thickness of 2.6 and 2 μm, respectively, which was in a good agreement with the parameters obtained from transport and range of ions in matter 98 (TRIM) code simulation. The nuclear energy loss distribution of the MeV B ions implanted into this crystal had a similar shape to that of the waveguide index profile, which means an inherent relationship between the waveguide formation and the energetic energy deposition.     

Formation of a planar optical waveguide by mega-electron-volt He+ and P+ ions implanted in a BiB(3)O(6) crystal

What is believed to be the first planar optical waveguide was formed in BiB(3)O(6) (BIBO) crystal by 2.8-MeV He(+)-ion implantation with a dose of 2x10(16)ions/cm (2) and 2.8-MeV P(+)-ion implantation with a dose of 1x10(14)ions/cm (2) at room temperature. We observed 21 darks modes for the He(+)-ion-implanted BIBO waveguides and four dark modes for the P(+)-ion-implanted waveguides. The refractive-index profile of the He(+)-implanted BIBO waveguide was analyzed. The data also suggest that the BIBO waveguides formed by MeV He(+)-ion and P(+)-ion implantation differ in their developing mechanisms.     

Visible and near-infrared optical properties of Nd:CLNGG crystal waveguides formed by proton implantation

A Nd:CLNGG waveguide structure operated at wavelengths of both 632.8 nm and 1539 nm was demonstrated for the first time to our knowledge, which was produced by the 480-keV H~+ion implantation with a dose of 1.0×10~(17)protons/cm~2.Its propagating modes at 632.8 nm and 1539 nm were measured by the well-known prism coupling technique. The refractive index profile at either 632.8-nm wavelength or 1539-nm wavelength was optical barrier type in the proton-implanted Nd:CLNGG crystal optical waveguide, which was calculated by using the reflectivity calculation method. The near-field light intensity distributions were also simulated by the finite-difference beam propagation method in the visible and nearinfrared bands.     

An He-implanted optical planar waveguide in an Nd:YGG laser crystal preserving fluorescence properties

We report the formation of a planar waveguide in an Nd:YGG laser crystal by low-energy He-ion implantation at liquid nitrogen temperature (77 K). The optical properties are measured by the prism coupling and end-face coupling methods, the absorption properties the waveguide and Nd:YGG substrate are obtained. The fluorescence spectrums are investigated by confocal methods. The experimental results revealed that the planar waveguide preserved the absorption and fluorescence properties of the Nd:YGG laser crystal. Thus, the planar waveguide formed by the ion implantation method is a promising candidate in waveguide lasers.     

Optical Waveguide Formed in RbTiOPO4 Crystal by 6.0 MeV O^3＋ Implantation

A planar optical waveguide was formed in RbTiOP04 crystal by 6.0-MeV oxygen ion implantation with the dose of 2 × 10^15 ions/cm2 at room temperature. Annealing at 200℃ for 30min in air is performed to improve the thermal stability of the waveguide. The dark modes of the waveguide are measured at wavelengths 633 and 1539 nm, respectively. The refractive index profiles in the guiding layer are reconstructed by using the reflectivity calculation method. TRIM＇98 code was carried out to simulate the damage profiles caused by the implantation process to obtain a better understanding of the waveguide formation.