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Preparation of p-type ZnO:(Al, N) by a combination of sol--gel and ion-implantation techniques 下载免费PDF全文
We report the preparation of p-type ZnO thin films on (0001)
sapphire substrates by a combination of sol--gel and
ion-implantation techniques. The results of the Hall-effect
measurements carried out at room temperature indicate that the
N-implanted ZnO:Al films annealed at 600\du\ have converted to
p-type conduction with a hole concentration of
$1.6\times1018cm-3, a hole mobility of
3.67cm2/V.s and a minimum resistivity of
4.80cm.\Omega$. Ion-beam induced damage recovery has been
investigated by x-ray diffraction (XRD), photoluminescence (PL) and
optical transmittance measurements. Results show that diffraction
peaks and PL intensities are decreased by N ion implantation, but
they nearly recover after annealing at 600\du. Our results
demonstrate a promising approach to fabricate p-type ZnO at a low
cost. 相似文献
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First-principles investigation of N-Ag co-doping effect on electronic properties in p-type ZnO 下载免费PDF全文
The geometric structure, band structure and density of
states of pure, Ag-doped, N-doped, and N--Ag codoped wurtzite ZnO
have been investigated by the first-principles ultra-soft
pseudopotential method based on the density functional theory. The
calculated results show that the carrier concentration is increased
in the ZnO crystal codoped by N and Ag, and the codoped structure is
stable and is more in favour of the formation of p-type ZnO. 相似文献
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In order to obtain p-type ZnO thin films, effect of atomic ratio of Zn:N:Al on the electronic and structural characteristic of ZnO thin films was investigated. Hall measurement indicated that with the increase of Al doping, conductive type of as-grown ZnO thin films changed from n-type to p-type and then to n-type again, reasons are discussed in details. Results of X-ray diffraction revealed that co-doped ZnO thin films have similar crystallization characteristic (0 0 2 preferential orientation) like that of un-doping. However, SEM measurement indicated that co-doped ZnO thin films have different surface morphology compared with un-doped ZnO thin films. p-type ZnO thin films with high hole concentration were obtained on glass (4.6 × 1018 cm−3) and n-type silicon (7.51 × 1019 cm−3), respectively. 相似文献
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采用离子束增强沉积方法在Si和SiO2/Si衬底上制备In-N共掺杂ZnO薄膜(INZO),溅射靶是用ZnO和2 atm% In2O3粉体均匀混合并压制而成,在氩离子溅射ZnO靶的同时,氮、氩混合离子束垂直注入沉积的薄膜.实验结果显示INZO薄膜具有(002)的择优取向,并且为p型导电,电阻率最低为0.9Ωcm.薄膜在氮气、氧气气氛下退火,对薄膜的结构和电学特性与成膜和退火条件的关系进行了分析.
关键词:
氧化锌薄膜
p型掺杂
离子束增强沉积 相似文献
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Formation of p-type ZnO film on InP substrate by phosphor doping 总被引:3,自引:0,他引:3
Kyu-Hyun Bang Deuk-Kyu Hwang Min-Chul Park Young-Don Ko Ilgu Yun Jae-Min Myoung 《Applied Surface Science》2003,210(3-4):177-182
ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn3P2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn3P2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices. 相似文献
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采用PECVD(等离子体增强化学气相沉积)工艺在普通玻璃和Si基上制备出了方块电阻低至89 Ω,可见光透过率高达79%,对基体附着力强的多晶态的AZO(ZnO:Al)薄膜.采用PECVD法制备AZO薄膜是一种有益的尝试,AZO透明导电薄膜不仅具有与ITO(透明导电薄膜,如In2O3:Sn)可比拟的光电特性,而且价格低廉、无毒,在氢等离子体环境中更稳定,所获结果对实际工艺条件的选择具有一定借鉴作用和参考价值.
关键词:
AZO(ZnO:Al)
等离子体增强化学气相沉积
透明导电薄膜 相似文献
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Nanocrystals of ZnO, doped with aluminum and lithium, were synthesized by chemical co-precipitation from an aqueous solution mixture of Zn(NO)3, AlCl3 and LiCl. With an aim to produce strong white luminescence, the intensity of the visible luminescence was tailored as a function of dopant concentration. We observed a significant enhancement of the yellowish-white photoluminescence from ZnO nanocrystals due to co-doping with aluminum and lithium. The luminescence intensity increases and the peak position shifts to lower wavelength with increase in the dopant concentration. Although the exact mechanism of the enhancement of the luminescence could not be established, still a possible shallow donor-to-deep acceptor recombination was proposed. 相似文献
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Aluminium-doped zinc oxide thin films were grown on glass substrates using hot wall deposition technique. The method involved
evaporation of high purity ZnO and Al from respective sources surrounded by alumina cylinder held at high temperature. The
additional thermal energy supplied by the hot wall to the particles colliding on it helps in its migration resulting in highly
uniform films. XRD studies show the growth of c-axis oriented near single phase ZnO films having about 90% transmittance in
the visible range and resistivity of the order of 10−4Θ cm. 相似文献
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(Al,Mo)-codoped ZnO powders with a constant molar ratio of Zn:Al (99:1) and various molar ratios of Mo:Al (0-0.02) were synthesized by a sol-gel process and characterized by X-ray diffraction, field emission scanning electron microscopy, and UV-vis and luminescent spectrophotometry. The experiments indicated that the powders had random orientation and a slightly larger average particle size that increased with increasing Mo proportion. The Mo doping resulted in the enhancement of transmittance in the UV-visible light range and the widening of the band gap. Optimal efficiency appeared at molar ratio of Mo:Al = 0.01, and Mo doping resulted in the formation of a new emission center and the enhancement of the emissions in range of visible light. 相似文献
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p-Type transparent conducting tin-gallium oxide (TGO) films were successfully fabricated on quartz substrates by DC magnetron sputtering of GaSn alloy films followed by thermal oxidation. XRD characterization indicated that the TGO films maintain rutile structure of the tin oxide (SnO2). UV-vis transmittance spectra indicated that the films have a transmittance higher than 85% in the visible region, with an optical band-gap around 3.8 eV. Hall effect measurement showed that electrical properties of the TGO films were dependent on oxidation temperature. Oxidation at too high or low temperature was unfavorable for p-type conduction. It is found that the optimum oxidation temperature for highest hole concentration (8.84 × 1018 cm−3) was in the range of 600-650 °C. 相似文献
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《Current Applied Physics》2008,8(5):569-572
We intend to search a new method to prepare high-quality and large-size p-ZnSe single crystal. In this study, ZnSe:Li3N single crystal is grown by a vertical Bridgman method using a closed double-crucible. The photoluminescence (PL) spectrum of the as-grown ZnSe:Li3N crystal at 8 K shows very strong donor–acceptor pair (DAP) and very weak exciton emissions. In order to activate doped Li3N, ZnSe:Li3N single crystal is annealed at high temperature in Zn-saturated atmosphere. By selecting suitable annealing conditions, a very strong I1 emission line related to shallow acceptor is observed. The capacitance–voltage (C–V) characteristics indicate that the annealed ZnSe:Li3N single crystal is a p-type conduction. Furthermore, the acceptor concentration and ionization energy are estimated by examining the temperature dependences of the free-to-acceptor (FA) emission, the behaviors of Li and N are investigated, and the new emission at 2.34 eV is discussed. 相似文献
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p-Type ZnO thin films have been realized via monodoping antimony (Sb) acceptor by using pulsed laser deposition. The obtained films with the best electrical properties show a hole concentration in the order of 1018 cm−3 and resistivity in the range of 2-4 Ω cm. X-ray diffraction measurements revealed that all the films possessed a good crystallinity with (0 0 2)-preferred orientation. Guided by X-ray photoemission spectroscopy analysis and a model for large-sized-mismatched group-V dopant in ZnO, an SbZn-2VZn complex is believed to be the most possible acceptor in the Sb-doped p-type ZnO thin films. 相似文献
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张昊 《原子与分子物理学报》2012,29(6)
本文采用基于第一性原理的密度泛函理论(DFT)平面波超软赝势方法,计算了未掺杂ZnO和K,K-2N掺杂ZnO体系的晶体结构、能带、电子态密度与光学性质。研究表明:K掺杂ZnO体系,带隙变宽,在费米能级附近引入了较浅的受主能级,费米能级进入到价带中。而K-2N共掺杂体系中,带隙变窄,形成了浅受主能级,这个对改善ZnO的p型掺杂有重要意义。另一方面,掺杂后ZnO的光学性质也发生了一定变化,ZnO吸收谱中出现了新的吸收峰,同时介电函数虚部都出现了新的波峰,静态介电常数 也都增大了。 相似文献
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本文采用基于第一性原理的密度泛函理论(DFT)平面波超软赝势方法,计算了未掺杂ZnO和K,K-2N掺杂ZnO体系的晶体结构、能带、电子态密度与光学性质.研究表明:K掺杂ZnO体系,带隙变宽,在费米能级附近引入了较浅的受主能级,费米能级进入到价带中.而K-2N共掺杂体系中,带隙变窄,形成了浅受主能级,这个对改善ZnO的p... 相似文献
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荷叶的疏水性主要来自荷叶表面的微纳复合结构. 利用三步法对荷叶表面的微结构进行仿生,制备了ZnO花状微结构疏水性薄膜. 首先用sol-gel法在普通玻璃衬底上生长SiO2薄膜,然后进行磁控溅射生长籽晶层,再在其上利用水热法制备出微米量级和微纳复合的2种不同的ZnO花状微结构的均匀薄膜,经有机修饰后,具有不同程度的疏水能力. 用扫描电镜观察了不同微结构ZnO薄膜的表面特征,用X射线衍射研究了ZnO的结晶情况,并且研究了不同微结构对疏水性质的影响. 实验结果表明:微纳复合结构可以提高薄膜疏水性,最佳三相接触角达到140°. 相似文献
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This paper studies the wet etching behavior of AZO (ZnO:Al) transparent conducting film with tetramethylammonium hydroxide (TMAH). The optimum optoelectronic film is prepared first using designated RF power, film thickness and controlled annealing heat treatment parameters. The AZO film is then etched using TMAH etchant and AZ4620 photoresist with controlled etchant concentration and temperature to examine the etching process effect on the AZO film optoelectronic properties. The experimental results show TMAH:H2O = 2.38:97.62 under 45 °C at the average etch rate of 22 nm/min as the preferred parameters. The activation energy drops as the TMAH concentration rises, while the etch rate increases along with the increase in TMAH concentration and temperature. After lithography, etching and photoresist removal, the conductivity of AZO film dramatically drops from 2.4 × 10−3 Ω cm to 3.0 × 10−3 Ω cm, while its transmittance decreases from 89% to 83%. This is due to the poor chemical stability of AZO film against AZ4620 photoresist, leading to an increase in surface roughness. In the photoresist postbaking process, carbon atoms diffused within the AZO film produce poor crystallinity. The slight decreases in zinc and aluminum in the thin film causes a carrier concentration change, which affect the AZO film optoelectronic properties. 相似文献