Dependence of electron spin g-factor on magnetic field in quantum wells

The dependence of electron spin g-factor on magnetic field has been investigated in GaAs/AlGaAs quantum wells. We have estimated the electron g-factor from spin precession frequency in time-resolved photoluminescence measurements under a magnetic field in different configurations; the magnetic field perpendicular (g_⊥) and parallel (g_∥) to the quantum confinement direction. When the angle between the magnetic field and the confinement direction is 45°, we have found that g-factor varies depending on the direction of magnetic field and the circular polarization type of excitation light (σ⁺ or σ^?). These dependences of g-factor exhibit main features of Overhauser effect that nuclear spins react back on electron spin precession. The value of g_⊥ and g_∥ corrected for the nuclear effects agree well with the results of four-band k·p perturbation calculations.     

Magneto-optical single dot spectroscopy of GaSb/GaAs type II quantum dots

We have investigated magneto-optical properties of GaSb/GaAs self-assemble type II quantum dots by single dot spectroscopy in magnetic field. We have observed clear Zeeman splitting and diamagnetic shift of GaSb/GaAs quantum dots. The diamagnetic coefficient ranges from 5 to 30 μeV/T². The large coefficient and their large distribution are attributed to the size inhomogeneity and electron localization outside the dot. The g-factor of GaSb/GaAs quantum dots is slightly larger than that of similar type I InGaAs/GaAs quantum dots. In addition, we find almost linear relationship between the diamagnetic coefficient and the g-factor. The linear increase of g-factor with diamagnetic coefficient is due to an increase of spin-orbit interaction with dot size.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

Determination of the g-factor of electrons in N-type silicon surface inversion layers

The g-factor of conduction electrons in the surface inversion layer on a silicon (100) surface has been determined using the tilted magnetic field method developed by Fang and Stiles.The value of (m¹/m₀)·g at the fixed magnetic field was independent of surface carrier density n_s, whereas it had a sharp peak at about 97 koe. At strong magnetic field limit the value was constant and 0.4. If we take the effective mass of conduction electrons in the inversion layer on the (100) surface as 0.2m₀, the g-factor is about two which is the same as that for conduction electrons in bulk silicon.     

Effects of effective potential on g-factor in Si inversion layers

Taking into consideration the effective potential and the magnetic field dependent dielectric function, the effective g-factor and the magnetic susceptibility have been calculated. Results show that both quantities oscillate with magnetic field.The amplitude of the effective g-factor found in this way has the value between 3.26 and 2.49 for surface electron densities n ranging from 1.0×10¹² to 7.0×10¹² cm^-2. The enhancement of g-factor is divided into two parts, noninteracting and interacting part. The interacting part is dominant and shows $\text{n}{}^{\mathrm{<mtext>-3</mtext><mtext>2</mtext>}}$ behavior.     

Spin effects in InSb quantum wells

Among the III–V semiconductors, InSb has the smallest electron effective mass and the largest g-factor. We make use of these properties to explore some aspects of electron spin in InSb quantum wells with far-infrared magneto-spectroscopy. We observe the clear signature of spin-resolved cyclotron resonance caused by the non-parabolicity of the conduction band. We observe avoided-level crossings at magnetic fields where Landau levels of the same spin are predicted to intersect. We also study electron spin resonance in the far infrared over a wide range of magnetic field. In samples with symmetrically designed quantum wells we find cyclotron masses and observed g-factors in good agreement with a Pidgeon–Brown analysis adapted to the two-dimensional band structure. However, the spin splitting approaches 3 meV as the magnetic field approaches zero in samples intentionally asymmetrically doped.     

Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

We report on electron g-factor in an InAs-inserted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In_0.53Ga_0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.     

Gyromagnetic ratios of first 2+ states in126, 128, 130, 132Xe

Gyromagnetic ratios of first 2⁺ states in^{126, 128, 130, 132}Xe were determined by implantation perturbed angular correlations (IMPAC). The effective hyperfine magnetic field together with the transient magnetic field at xenon nuclei in iron was utilized to obtain the precession of the angular correlation. The precession due to the transient field was taken from systematics to be /g=–36±6 mrad. The effective hyperfine magnetic field was determined in an experiment on¹²⁶Xe in iron to be 900±200 kG. The results for theg-factors areg(128)=0.41±0.07,g(130)=0.38±0.07 andg(132)=0.37±0.05. Theg-factor of the 2⁺ state in¹²⁶Xe was determined in a separate experiment using a radioactive source of¹²⁶I to beg(126)=0.37±0.07, and was used as calibration for the IMPAC-data.     

Quantum magneto-transport in two-dimensional GaAs electron gases and SiGe hole gases

We have measured the low-temperature transport properties of two-dimensional (2D) GaAs electron gases and 2D SiGe hole gases. Our experimental results fall into three categories. (i) Collapse of spin-splitting and an enhanced Landé g-factor at Landau level filling factors both ν=3 and ν=1 in a 2D GaAs electron gas are observed. Our experimental results show direct evidence that the effective disorder is stronger at ν=1 than that at ν=3 over approximately the same perpendicular magnetic field range. (ii) We present evidence for spin-polarisation of a dilute 2D GaAs electron gas. The Lande g-factor of the system is estimated to be 1.66. This enhanced g value is ascribed to electron–electron interactions at ultra low carrier density limit. (iii) In a high-quality SiGe hole gas, there is a temperature-independent point in the magnetoresistivity ρ_xx and ρ_xy which is ascribed to experimental evidence for a quantum phase transition between ν=3 and ν=5. We also present a study on the temperature(T)-driven flow lines in our system.     

Stability and instability of relativistic electrons in classical electromagnetic fields

The stability of matter composed of electrons and static nuclei is investigated for a relativistic dynamics for the electrons given by a suitably projected Dirac operator and with Coulomb interactions. In addition there is an arbitrary classical magnetic field of finite energy. Despite the previously known facts that ordinary nonrelativistic matter with magnetic fields, or relativistic matter without magnetic fields, is already unstable when a, the fine structure constant, is too large, it is noteworthy that the combination of the two is still stableprovided the projection onto the positive energy states of the Dirac operator, whichdefines the electron, is chosen properly. A good choice is to include the magnetic field in the definition. A bad choice, which always leads to instability, is the usual one in which the positive energy states are defined by the free Dirac operator. Both assertions are proved here. This paper is dedicated to Bernard Jancovici on the occasion of his 65th birthday.     

Tails of the density of states of two‐dimensional Dirac fermions

The density of states of Dirac fermions with a random mass on a two‐dimensional lattice is considered. We give the explicit asymptotic form of the single‐electron density of states as a function of both energy and (average) Dirac mass, in the regime where all states are localized. We make use of a weak‐disorder expansion in the parameter g/m², where g is the strength of disorder and m the average Dirac mass for the case in which the evaluation of the (supersymmetric) integrals corresponds to non‐uniform solutions of the saddle point equation. The resulting density of states has tails which deviate from the typical pure Gaussian form by an analytic prefactor.     

Spin-dependent photoemission induced by a jump in the electron g-factor at the p-GaAs(Cs,O)-vacuum interface

It has been found experimentally that the probability of emitting electrons from p-GaAs(Cs,O) to vacuum in the presence of a magnetic field depends on the sign of the circular polarization of exciting light. The main cause of this effect is the jump in the electron g-factor at the semiconductor-vacuum interface (from g* = ?0.44 in GaAs to g ₀ = 2 in vacuum). Owing to the jump in the electron g-factor, the effective electron affinity depends on the mutual orientation of optically oriented electrons and the magnetic field and this dependence results in the spin-dependent photoemission.     

Topological geometrodynamics and the solar neutrino problem

A solution of the solar neutrino problem based on certain differences between T(opological) G(eometro) D(ynamics) and the standard model of the electroweak interactions is proposed. First, TGD predicts the existence of a right-handed neutrino inert with respect to ordinary electroweak interactions. Second, the generalization of the massless Dirac equation contains terms mixing differentM ⁴ chiralities, unlike the ordinary massless Dirac equation. This and the observation of anticorrelations of the solar neutrino flux with sunspot number suggest that solar neutrinos are transformed to right-handed neutrinos on the convective zone of the Sun. Third, the compactness ofCP ₂ implies topological field quantization: space-time decomposes into regions, topological field quanta, characterized by a handful of vacuum quantum numbers. In particular, there are topological obstructions for the smooth global imbeddings of magnetic fields and the decomposition of the solar magnetic field into flux tubes is predicted. Finally, every electromagnetically neutral mass distribution is accompanied by a long-rangeZ ⁰ vacuum field. If the vacuum quantum numbers inside the flux tubes of the solar magnetic field are considerably smaller than in the normal phase, theZ ⁰ electric force becomes strong and implies Thomas precession for the spin of the lefthanded component of the neutrino. As a consequence, left-handed neutrinos are transformed to right-handed ones and the process is irreversible, since righthanded neutrinos do not couple toZ ⁰.     

Magnetic and EPR studies of the EuFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> single crystal

Magnetic and electron paramagnetic resonance (EPR) properties of EuFe₃(BO₃)₄ single crystals have been studied over the temperature range of 300–4.2 K and in a magnetic field up to 5 T. The temperature, field and orientation dependences of susceptibility, magnetization and EPR spectra are presented. An antiferromagnetic ordering of the Fe subsystem occurs at about 37 K. The easy direction of magnetization perpendicular to the c axis is determined by magnetic measurements. Below 10 K, we observe an increase of susceptibility connected with the polarization of the Eu sublattice by an effective exchange field of the ordered Fe magnetic subsystem. In a magnetic field perpendicular to the c axis, we have observed an increase of magnetization at T < 10 K in the applied magnetic field, which can be attributed to the appearance of the magnetic moment induced by the magnetic field applied in the basal plane. According to EPR measurements, the distance between the maximum and minimum of derivative of absorption line of the Lorentz type is equal to 319 Gs. The anisotropy of g-factor and linewidth is due to the influence of crystalline field of trigonal symmetry. The peculiarities of temperature dependence of both intensity and linewidth are caused by the influence of excited states of europium ion (Eu³⁺). It is supposed that the difference between the g-factors from EPR and the magnetic measurements is caused by exchange interaction between rare earth and Fe subsystems via anomalous Zeeman effect.     

Optical orientation of particles with a random g-factor in semiconductor nanostructures

In real quasi-two-dimensional semiconductor nanostructures (quantum wells, quantum dots), the transverse g-factor of holes is a stochastic quantity. This fact should be taken into account in analyzing the optical orientation and Hanle effect of holes. The Hall effect for an ensemble of particles with a “random” g-factor has been treated theoretically. In the case where the spin relaxation time of a hole with a characteristic g-factor is shorter than the hole lifetime, there can occur a narrowing of the depolarization contour and an increase in its amplitude. In the opposite case of long spin relaxation times (trions in quantum dots), a formula has been derived, which generalizes the previously obtained result to the case of an arbitrary tilt angle of the magnetic field with respect to the plane of the layer (Hanle effect in the tilted form).     

Microwave electric field induced spin transitions of AlAs 2D electrons

We present the first direct electron spin resonance (ESR) on a 2D electron gas in a III–V semiconductor. ESR on a high mobility 2D electron gas in a single AlAs quantum well reveals an electronic g-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimal linewidth of 7 Gauss. Both the signal amplitude and its dependence on the position and orientation of the sample in the cavity unambiguously demonstrate that the spin transitions in our experiment are caused by the microwave electric field. We present a model that ascribes the spin transitions to the effective magnetic field acting on the electron spins that arises from (Bychkov–Rashba) spin-orbit interaction and the modulation of the electron wavevector around k_F induced by the microwave electric field.     

Peculiarities in the magnetic,magnetoelectric, and magnetoelastic properties of SmFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> multiferroic

Results of a complex investigation of the magnetic, magnetoelectric, and magnetoelastic properties of a SmFe₃(BO₃)₄ single crystal are presented. Samarium iron borate is similar to another easy-plane iron borate, NdFe₃(BO₃)₄, in that it possesses a large value of the magnetic-field-induced polarization (about 500 μC/m²), the sign of which changes when the field direction is changed between axes a and b of the crystal. However, the temperature dependence of the magnetic susceptibility and the field dependence of polarization and magnetostriction of the two compounds are significantly different, which is explained by the weak effect of external magnetic field on the ground-state multiplet of samarium ion, which is characterized by an extremely small value of its g-factor.     

Local magnetic order in silicon implanted with high-energy ions

A room-temperature local magnetic order has been detected in silicon implanted with high-energy Kr⁺ and Xe⁺ ions. The evidence of the presence of the local magnetic order are the electron magnetic resonance lines with g-factor values of about 2.2 and 3.4, the hysteresis of the resonance magnetic field values of these lines, the anisotropy characteristic of ferromagnets, and the broadening. The ordering effect is retained after the annealing of samples at temperatures of no higher than 1270 K.     

g-factor of the 9/2+ isomeric state in 65Ni from transfer reaction

We report a measurement of the g-factor of the I ^π = 9/2⁺, t _1/2 = 22ns isomer in ⁶⁵Ni. The state of interest was populated and spin-oriented using a single-neutron transfer on an enriched ⁶⁴Ni target. The value, which was obtained, g(9/2⁺,^65m Ni) = - 0.296(3) is well in agreement with the g-factors of the other 9/2⁺ states in the region and with large-basis shell model calculations. The known g-factor of the 9/2⁺ isomer in ⁶³Ni was used in order to verify the strength of the hyperfine field of Ni( Ni) at room temperature.