Zero-Forcing Successive Decoding Under Nakagami-<Emphasis Type="Italic">m</Emphasis> Fading Channels

In this paper, the performance of a multiuser distributed spatial multiplexing system is analytically investigated. The system operates under a Nakagami-m fading environment. All the users, equipped with single antennas, are simultaneously transmitting their streams to a multi-antenna receiver. Zero-forcing is applied along with successive interference cancellation as a means for efficient detection of the received streams. New exact closed-form expressions with regards to some important performance metrics, namely, outage probability and ergodic capacity of each stream are presented. Both the analytical expressions and the simulation results show the impact of channel severity and scale of antenna array to the overall system performance. A particular emphasis on the scenario of the emerging massive multiple input-multiple output systems is provided.     

Low-Power FPGA-Implementation of <Emphasis Type="Italic">atan</Emphasis>(<Emphasis Type="Italic">Y</Emphasis>/<Emphasis Type="Italic">X</Emphasis>) Using Look-Up Table Methods for Communication Applications

This paper presents an architecture for the computation of the atan(Y/X) operation suitable for broadband communication applications where a throughput of 20 MHz is required. The architecture takes advantage of embedded hard-cores of the FPGA device to achieve lower power consumption with respect to an atan(Y/X) operator based on CORDIC algorithm or conventional LUT-based methods. The proposed architecture can compute the atan(Y/X) with a latency of two clock cycles and its power consumption is 49% lower than a CORDIC or 46% lower than multipartite approach.

An ultra-low-power CMOS symmetrical OTA for low-frequency <Emphasis Type="Italic">G</Emphasis><Subscript><Emphasis Type="Italic">m</Emphasis></Subscript>-<Emphasis Type="Italic">C</Emphasis> applications

In this paper an ultra-low-power CMOS symmetrical operational transconductance amplifier (OTA) for low-frequency G _m -C applications in weak inversion is presented. Its common mode input range and its linear input range can be made large using DC shifting and bulk-driven differential pair configuration (without using complex approaches). The symmetrical OTA was successfully verified in a standard CMOS 0.35-μm process. The measurements show an open loop gain of 61 dB and a unit gain frequency of 195 Hz with only 800 mV of power supply voltage and just 40 nW of power consumption. The transconductance is 66 nS, which is suitable for low-frequency G _m -C applications.     

Performance Analysis of the Double-Antenna SDC System Over <Emphasis Type="Italic">N</Emphasis>-Nakagami Fading Channels

The performance of the double-antenna switched diversity combining (SDC) system over N-Nakagami fading channels is investigated in this paper. Based on the method of the probability density function of the signal-to-noise ratio, the exact expressions for the channel capacity and average symbol error probability (ASEP) are derived. Then the channel capacity and ASEP performance under different conditions is evaluated through numerical simulations to verify the analysis. The simulation results showed that the performance of the double-antenna SDC system is improved with the fading coefficient increased, but the level of improvement is declined as the number of cascaded components increased.     

Performance Evaluation of Multiple-Cell DS-CDMA Systems Over Correlated Nakagami-<Emphasis Type="Italic">m</Emphasis> Fading Environments

In this paper, the impact of the branch correlation on the performance of multiple-cell DS-CDMA cellular systems over Nakagami-m fading channels with arbitrary branch correlation is investigated. The received multipath-faded signals are assumed to experience identical but non-independent correlated Nakagami-m channels within the reference cell. A new closed-form formula for the joint probability density function (joint pdf) of the diversity combiner with arbitrary correlation coefficients in terms of the generalized Laguerre polynomial and the new expressions of average bit-error rate (BER) for the DS-CDMA system are given in this paper. The results, which were also compared with the performance of the single cell environments, demonstrate that the BER is significantly dependent on the correlation characteristic of diversity branching for both single-cell and multiple-cell environments.Joy I. Z. Chen was born in Taiwan. He received his B.Sc degree in electronics engineering from the National Taiwan Technical University, Taipei, Taiwan, and M.Sc degree in electrical engineering from the Da Yeh University, Chung Hwa, Taiwan, in 1985 and 1995, respectively, and Ph.D. degree in electrical engineering from National Defense University, Tao-Yuan, Taiwan, in 2001.He is currently an assistant professor of Department of Communication Engineering, Da Yeh University at Chang-Hwa Taiwan. Prior to joining the Da Yeh University, he worked at the Control Data Company (Taiwan) as a technical manager since September 1985–September 1996. His research interests include wireless communications, communication theory, and spread spectrum technical.     

Implementation of a field programmable gate array for wireless control of a <Emphasis Type="Italic">lab</Emphasis>-<Emphasis Type="Italic">on</Emphasis>-<Emphasis Type="Italic">a</Emphasis>-<Emphasis Type="Italic">robot</Emphasis>

We report the design of a digital system to wirelessly control microchip capillary electrophoresis (CE) equipment and a mobile unit for chemical analysis. The digital system consists of an embedded processor designed for digital control, decoding and applying of wirelessly-transmitted test parameters, data acquisition, and mobility control. The design is implemented on a field programmable gate array (FPGA) and its development board interfaces with four digital-to-analog converters on a newly-designed 3-channel high voltage power supply, electrochemical detector, wireless modems for communications with a base unit, mobile platform motor controllers, GPS sensor, and an air micropump. The FPGA allows for all the interfacing hardware to perform CE and transmission of the data acquired from the interfacing electrochemical detector. The work described herein extends the utilization of microchip capillary electrophoresis to include remotely controlled field applications.     

Analysis of Asynchronous Band-Limited DS-CDMA with MMSE Multiuser Detector over Generalized-<Emphasis Type="Italic">k</Emphasis> Fading Channels

In this paper, we investigate bit-error-rate (BER) performance of a minimum mean-squared error (MMSE) multiuser receiver for asynchronous band-limited direct- sequence code-division multiple-access (DS-CDMA) systems. We focus on the BER performance in the presence of multitone jamming (MTJ) over frequency-selective multipath fading channels. We consider the generalized-K fading model in our analysis, as it can model a large spectrum of fading-channel characteristics. We also analyze the effects of band- limited pulse shape on the BER performance of the system. Multipath diversity based on the maximal-ratio combining (MRC) scheme is employed to combat fading effects. Our analytical expressions are valid for arbitrary diversity levels and fading parameters. Spectrum raised cosine (SRC) and Beaulieu–Tan–Damen (BTD) pulse shapes are employed for numerical analysis. Numerical results show that in the presence of MTJ and under various channel conditions, the MMSE based receiver gives better BER performance than the one without it. Moreover, the system with BTD pulses outperforms the one with SRC pulses.     

<Emphasis Type="Italic">Nframe</Emphasis>: A privacy-preserving with non-frameability handover authentication protocol based on (<Emphasis Type="Italic">t</Emphasis>, <Emphasis Type="Italic">n</Emphasis>) secret sharing for LTE/LTE-A networks

Seamless handover between the evolved universal terrestrial radio access network and other access networks is highly desirable to mobile equipments in the long term evolution (LTE) or LTE-Advanced (LTE-A) networks, but ensuring security and efficiency of this process is challenging. In this paper, we propose a novel privacy-preserving with non-frameability handover authentication protocol based on (t, n) secret sharing to fit in with all of the mobility scenarios in the LTE/LTE-A networks, which is called Nframe. To the best of our knowledge, Nframe is the first to support protecting users’ privacy with non-frameability in the handover process. Moreover, Nframe uses pairing-free identity based cryptographic method to secure handover process and to achieve high efficiency. The formal verification by the AVISPA tool shows that Nframe is secure against various malicious attacks and the simulation result indicates that it outperforms the existing schemes in terms of computation and communication cost.     

Comparison of <Emphasis Type="Italic">p</Emphasis>-cycles and <Emphasis Type="Italic">p</Emphasis>-trees in a unified mathematical framework

As high-speed networks grow in capacity, network protection becomes increasingly important. Recently, following interest in p-cycle protection, the related concept of p-trees has also been studied. In one line of work, a so-called “hierarchical tree” approach is studied and compared to p-cycles on some points. Some of the qualitative conclusions drawn, however, apply only to p-cycle designs consisting of a single Hamiltonian p-cycle. There are other confounding factors in the comparison between the two, such as the fact that, while the tree-based approach is not 100% restorable, p-cycles are. The tree and p-cycle networks are also designed by highly dissimilar methods. In addition, the claims regarding hierarchical trees seem to contradict earlier work, which found pre-planned trees to be significantly less capacity-efficient than p-cycles. These contradictory findings need to be resolved; a correct understanding of how these two architectures rank in terms of capacity efficiency is a basic issue of network science in this field. We therefore revisit the question in a definitive and novel way in which a unified optimal design framework compares minimum capacity, 100% restorable p-tree and p-cycle network designs. Results confirm the significantly higher capacity efficiency of p-cycles. Supporting discussion provides intuitive appreciation of why this is so, and the unified design framework contributes a further theoretical appreciation of how pre-planned trees and pre-connected cycles are related. In a novel further experiment we use the common optimal design model to study p-cycle/p-tree hybrid designs. This experiment answers the question “To what extent can a selection of trees compliment a cycle-based design, or vice-versa?” The results demonstrate the intrinsic merit of cycles over trees for pre-planned protection.     

Determination of deformation potential constants for <Emphasis Type="Italic">n</Emphasis>-and <Emphasis Type="Italic">p</Emphasis>-Si from the concentration anharmonicity

The contribution of charge carriers to the fourth-order modulus of elasticity β for n-and p-type silicon under uniaxial tension along the [110] direction was analyzed in the approximation of small strains. The effect of concentration on β was measured using spontaneous excitation of Lamb waves in bent plates with different doping levels. Experimental curves were used to determine the deformation potential constants of the conduction band Ξ_u=7±1 eV and the averaged value of the deformation potential of the valence band \(\sqrt[4]{{\left\langle {\Phi ^4 } \right\rangle }} = 5.6 \pm 0.8eV\) at room temperature.     

Electromagnetic Modeling of <Emphasis Type="Italic">n</Emphasis>-on-<Emphasis Type="Italic">p</Emphasis> HgCdTe Back-Illuminated Infrared Photodiode Response

The mercury cadmium telluride (MCT) photodiode is a well-known detector for infrared (IR) sensing. Its growth (mainly liquid phase epitaxy (LPE)) and photovoltaic technology (ion implantation planar technology for instance) for second-generation IR detectors (linear and 2D monospectral arrays) now appear to be mature, well mastered, and understood, and allow optimal detection in a wide range of spectral bands. However, the next generation of IR detectors is supposed to use more sophisticated structures and technologies (such as mesa technology for dual-band detection or advanced heterostructures for high-operating-temperature detectors). Such structures are usually grown by molecular beam epitaxy (MBE) and consist of a layered stack of different thicknesses, HgCdTe (MCT) compositions, and doping levels. Moreover, pitches accessible today with advanced hybridization techniques (20 μm or less) tend to approach the diffraction limit, especially for long-wave (LWIR) and very long-wave (VLWIR) devices. Hence, the physical understanding of these third-generation pixels from an electromagnetic (EM) point of view is not straightforward as it will have to take into account diffraction effects in the pixels. This paper will focus on EM simulation of advanced MCT detectors, using finite element modeling (FEM) to solve Maxwell’s equations in a two-dimensional (2D) configuration and calculate absorption in the pixel. The corresponding collected current is then estimated by introducing a simple diffusion modeled diode and is compared to spot-scan experiments and/or experimental spectral responses to validate the method.     

Practical Surface Treatments and Surface Chemistry of <Emphasis Type="Italic">n</Emphasis>-Type and <Emphasis Type="Italic">p</Emphasis>-Type GaN

X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study the electronic structure of n-GaN and p-GaN(0001) surfaces after three ex situ surface treatments: aq-HCl, annealing in NH₃, and annealing in HCl vapor. The combination of in situ vacuum annealing and re-exposure of samples to air revealed that the adsorption of ambient contaminants can reduce the surface state density and subsequent band bending on both n-GaN and p-GaN surfaces. Insights derived from first-principles calculations of the adsorption of relevant species on the Ga-terminated GaN(0001) surface are used to explain these experimental observations qualitatively.     

Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, <Emphasis Type="Italic">V</Emphasis>, and <Emphasis Type="Italic">W</Emphasis> bands

A technology for fabricating multifunction monolithic microwave integrated circuits (MMICs) based on gallium nitride (GaN) heterostructures, which operate at the frequency range up to 100 GHz (the Ka, V, and W bands), is developed. Power amplifier (PA) MMICs operating at 90 GHz are fabricated using the coplanar technology with the gain coefficient being up to 15 dB and the specific output power exceeding 500 mW/mm. In addition, microstrip technology with the use of the polymer dielectric and grounding metallization over the wafer surface without through holes in the substrate is approved. The parameters of the MMICs for multifunction single-chip transmit-receive modules (TRMs), as well as the parameters of the MMICs for intermediate-frequency amplifiers (IFAs), voltage-controlled oscillators (VCOs), low noise amplifiers (LNAs), PAs, and balanced mixers operating in the Ka and V bands (up to 70 GHz), which are fabricated using the proposed technology, are presented.     

Fast Reconfigurable Elliptic Curve Cryptography Acceleration for <Emphasis Type="Italic">GF</Emphasis>(2<Superscript><Emphasis Type="Italic">m</Emphasis></Superscript>) on 32 bit Processors

This paper focuses on the design and implementation of a fast reconfigurable method for elliptic curve cryptography acceleration in GF(2 ^m ). The main contribution of this paper is comparing different reconfigurable modular multiplication methods and modular reduction methods for software implementation on Intel IA-32 processors, optimizing point arithmetic to reduce the number of expensive reduction operations through a novel reduction sharing technique, and measuring performance for scalar point multiplication in GF(2 ^m ) on Intel IA-32 processors. This paper determined that systematic reduction is best for fields defined with trinomials or pentanomials; however, for fields defined with reduction polynomials with large Hamming weight Barrett reduction is best. In GF(2⁵⁷¹) for Intel P4 2.8 GHz processor, long multiplication with systematic reduction was 2.18 and 2.26 times faster than long multiplication with Barrett or Montgomery reduction. This paper determined that Montgomery Invariant scalar point multiplication with Systematic reduction in Projective coordinates was the fastest method for single scalar point multiplication for the NIST fields from GF(2¹⁶³) to GF(2⁵⁷¹). For single scalar point multiplication on a reconfigurable elliptic curve cryptography accelerator, we were able to achieve ∼6.1 times speedup using reconfigurable reduction methods with long multiplication, Montgomery’s MSB Invariant method in projective coordinates, and systematic reduction. Further extensions were made to implement fast reconfigurable elliptic curve cryptography for repeated scalar point multiplication on the same base point. We also show that for L > 20 the LSB invariant method combined with affine doubling precomputation outperforms the LSB invariant method combined with López-Dahab doubling precomputation for all reconfigurable reduction polynomial techniques in GF(2⁵⁷¹) for Intel IA-32 processors. For L = 1000, the LSB invariant scalar point multiplication method was 13.78 to 34.32% faster than using the fastest Montgomery Invariant scalar point multiplication method on Intel IA-32 processors.     

Fourier Transform Domain Analysis of High <Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> Superconducting Rectangular Microstrip Patch over Ground Plane with Rectangular Aperture

A rigorous full-wave analysis in the Fourier transform domain is carried out in order to obtain the resonant frequencies and half-power bandwidths of the high T _c superconducting rectangular microstrip patches over ground planes with rectangular apertures. To include the effect of the superconductivity of the microstrip patch in the full-wave analysis, a complex surface impedance is considered. This impedance is determined by using London’s equation and the two-fluid model of Gorter and Casimir. The validity of the solution is tested by comparison of the computed results with previously published data. Variations of the resonant frequency with the high T _c superconducting film thickness are presented. Results showing the effect of the temperature on the resonant frequency and half-power bandwidth of the superconducting microstrip antenna with a rectangular aperture in the ground plane are also given. Finally, a comparison between the efficiency of two antennas is presented. For the first antenna, YBCO patch with YBCO ground plane are considered. For the second antenna, the patch and the ground plane are with copper.     

HgCdTe <Emphasis Type="Italic">p</Emphasis>-on-<Emphasis Type="Italic">n</Emphasis> Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth

Extrinsic p-type doping during molecular-beam epitaxy (MBE) growth represents an essential generic toolbox for advanced heterostructures based on the HgCdTe material system: PiN diodes, mesa avalanche photodiodes (APD) or third-generation multispectral focal-plane arrays. Today, arsenic appears to be the best candidate to fulfill this role and our group is actively working on its incorporation during MBE growth, using an original radio frequency (RF) plasma source for arsenic. Such a cell is supposed to deliver a monatomic As flux, and as expected we observed high As electrical activation rates after annealing short-wave (SW), mid-wave (MW), and long-wave (LW) layers. At last, a couple of technological runs have been carried out in the MW range in order to validate the approach on practical devices. p-on-n focal-plane arrays (FPA) have been fabricated using a mesa delineated technology on an As-on-In doped metallurgical heterojunction layer grown on a lattice-matched CdZnTe layer (320 × 256, 30 μm pitch, 5 μm cutoff at 77 K). Observed diodes exhibit very interesting electro-optical characteristics: large shunt impedance, high quantum efficiency, and no noticeable excess noise. The resulting focal-plane arrays were observed to be very uniform, leading to high operabilities. Noise equivalent temperature difference (NETD) distributions are very similar to those observed with the As ion-implanted p-on-n technology, fabricated in our laboratory as well. In our opinion, those excellent results demonstrate the feasibility of our MBE in situ arsenic doping process. Good electrical activation rates and high-quality layers can be obtained. We believe that such an approach allows precise control of the p-doping profile in the HgCdTe layer, which is necessary for advanced structure designs.     

Model for Charge Accumulation in <Emphasis Type="Italic">n</Emphasis>- and <Emphasis Type="Italic">p</Emphasis>-MOS Transistors during Tunneling Electron Injection from a Gate

A quantitative model for charge accumulation in an undergate dielectric during tunneling electron injection from a gate according to the Fowler–Nordheim mechanism is developed. The model takes into account electron and hole capture at hydrogen-free and hydrogen-related traps as well as the generation of surface states during the interaction of holes with hydrogen-related centers. The experimental dependences of the threshold voltage shift and gate voltage shift of n- and p-channel MOS (metal–oxide–semiconductor) transistors on the injected charge in the constant current mode are analyzed based on the model.     

Instability of current and <Emphasis Type="Italic">N</Emphasis>-shaped current-voltage characteristic in a silicon <Emphasis Type="Italic">p-i-n</Emphasis> diode subjected to a magnetic field

Experimental results of studying the p-i-n structures based on n-Si with the resistivity ρ = 120 Ω cm are reported. The dynamic S-shaped current-voltage characteristics were studied at various values of the applied magnetic field. Initiation of the current and voltage large-amplitude oscillations was observed at a magnetic field of 2 kOe. A further increase in the magnetic field leads to an increase in the amplitude of oscillations and to the appearance of a high-frequency oscillation mode with the frequency of ～ 3 MHz; this mode modulates the low-frequency mode. A magnetic field in excess of 5 kOe reduces the amplitude of both modes of current oscillations and completely suppresses oscillations in the circuit so that the S-shaped form of the current-volt-age characteristic disappears. In accordance with the theory, experimental current-voltage characteristics were observed for the first time to feature portions with negative differential N-type conductivity in the presence of a high magnetic field and with the chosen sample configuration and relevant values of electric field.     

Thermoelectric Properties of <Emphasis Type="Italic">n</Emphasis>-Type Multiple-Filled Skutterudites

Filled skutterudites are prospective intermediate temperature materials for␣thermoelectric power generation. CoSb₃-based n-type filled skutterudites have good electrical transport properties with power factor values over 40 μW/cm K² at elevated temperatures. Filling multiple fillers into the crystallographic voids of skutterudites would help scatter a broad range of lattice phonons, thus resulting in lower lattice thermal conductivity values. We report the thermoelectric properties of n-type multiple-filled skutterudites between 5 K and 800 K. The combination of different fillers inside the voids of the skutterudite structure shows enhanced phonon scattering, and consequently a strong suppression of the lattice thermal conductivity. Very good power factor values are achieved in multiple-filled skutterudite compared with single-element-filled materials. The dimensionless thermoelectric figure of merit for n-type filled skutterudites is improved through multiple-filling in a wide temperature range.     

Crystalline SiN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> Ultrathin Films Grown on AlGaN/GaN Using <Emphasis Type="Italic">In Situ</Emphasis> Metalorganic Chemical Vapor Deposition

Surface passivation by SiN _x films is indispensable for high-power operation of AlGaN/GaN heterojunction field-effect transistors (HFETs) since it can effectively suppress collapse in the drain current. So far, the plasma-enhanced chemical vapor deposition technique has been used for the SiN _x deposition; however, possible damage induced by the plasma processing may affect direct-current performance or reliability. In this paper, we present subsequent deposition of SiN _x ultrathin films on AlGaN/GaN in the same metalorganic chemical vapor deposition reactor. It is experimentally found that this in situ SiN _x passivation doubles the sheet carrier density at the AlGaN/GaN interface from that of the unpassivated sample. High-resolution cross-sectional transmission electron microscopy reveals that in situ SiN _x is crystallized on the AlGaN layer as island-like structures via the Stranski-Krastanov growth mode. The lattice constants of in situ SiN _x are estimated to be a ≈ 3.2 Å and c ≈ 2.4 Å, which are quite different from those of well-known Si₃N₄ crystal structures. First-principles calculation predicts that the crystal structure of in situ SiN _x is the defect wurtzite structure, which well explains the experimental results. The passivation technique using crystalline SiN _x films would be promising for high-power and high-frequency applications of AlGaN/GaN HFETs.