与偏振无关双向2×2和4×4自由空间光开关

利用成熟的偏振控制技术，设计了一种由偏振光分束器、相位型空间光调制器和反射镜构成的2×2光开关，该光开关所用器件少，具有结构简单紧凑、控制灵活方便、功能实现与信号光的偏振态无关以及可以双向交换等特点；在此基础上通过2×2光开关的串连，设计了一种与偏振无关的双向4×4光开关的实验模块，根据其路由选择与控制方法，得到了4×4光开关实现信号光全排列无阻塞输出与交换对应的路由状态表，并对该实验模块的功能实现进行了详细的分析与讨论。     

A 1 × 2 optical switch using one multimode interference region

A 1 × 2 optical switch using only one multimode interference (MMI) region is designed and demonstrated in GaAs/AlGaAs. This design makes a single MMI region works as MMI coupler using paired interference at “off” state and symmetric interference at “on” state. By injecting a current of 110 mA, the measured on/off ratio and crosstalk are 23 dB and 33 dB, respectively in the demonstrated device with GaAs/GaAlAs.     

Performance enhanced down-stream signalling for next generation long-reach 10 Gbit/s passive optical networks

In this paper, we have analyzed the signal processing methods both in digital and optical domain to enhance the transmission performance of downstream signalling in long reach passive optical networks (LR-PONs). The impact of non-linear (NL) equalization through signal processing, i.e. Volterra Equalization (VE), Digital Backpropagation (BP) and Optical Phase Conjugation with Non-linearity Module (OPC-NM) is investigated, in 10 Gbit/s (XG) DP-QPSK long-reach wavelength division multiplexed (WDM) PONs without midspan repeaters over 120 km standard single mode fibre (SMF) link for down-stream signals. Due to the compensation of optical Kerr effects, the sensitivity penalty is reduced to 2 dB by BP algorithm, 1.5 dB by VE algorithm and 2.69 dB by OPC-NM. Moreover, with the implementation of NL equalization technique we are able to get the transmission distance of 126.6 km SMF for the 1:1024 split-ratio at 5 GHz channel spacing in the non-linear region. Furthermore, the concept of super passive optical network (S-PON) is also evaluated, which involves a repeater stage consisting of optical amplifiers, to study the feasibility for receiver side signal processing and simplification.     

Optical 3R regeneration of 40 Gbit/s degraded data signals

A 40 Gbit/s optical 3R regenerator is proposed and demonstrated. The 3R regenerator consists of a dual-ring injection mode-locked fiber ring laser as the clock recovery module and an electroabsorption modulator (EAM) as the decision gate. The clock recovery module extracts the optical short pulse clock with low timing jitter from degraded 40 Gbit/s optical data streams, while the decision gate restores their signal quality. A numerical model describing the cross-absorption modulation effect in a bulk EAM is developed to explore the operating conditions, such as bias voltage, pump signal power. The timing jitter tolerance for the EAM optical gate is also investigated. Significantly improvement of BER is obtained from 40 Gbit/s RZ signals which are degraded by polarization mode dispersion or chromatic dispersion.     

Broadband 2 × 2 free-space optical switch using electronically controlled liquid lenses

To the best of our knowledge, proposed is the first liquid lens technology-based 2 × 2 free-space optical switch using a pair of Electronically Controlled Variable Focus Lenses (ECVFLs). By independently controlling the focal lengths of two cascaded liquid ECVFLs, the two input optical beams are spatially adjusted to couple to their respective output beam ports. At 633-nm, the experimental switch demonstrates 26.3 dB crosstalk, 23.0 dB within-channel isolation, 1.1 dB optical loss, and 0.2 dB Polarization Dependent Loss (PDL). A 0.2 dB Wavelength Dependent Loss (WDL) is measured over 633-nm and 514-nm wavelengths. A 1 × 2 optical-fiber coupled switch version is also tested. The proposed switch can be useful in free-space laser systems as well as fiber-based modules.     

Polymer-silica hybrid 1 × 2 thermooptic switch with low crosstalk

A new polymer-silica hybrid 1 × 2 thermooptic switch with significantly low crosstalk is demonstrated. The top cladding and the core layers are composed of polymer, while the bottom cladding layer is made of silica. Since polymer and silica have algebraic signs of their thermooptic coefficients that are opposite to each other, the refractive index of the core changes in the opposite direction to that of the bottom cladding as the temperature is increased. Thus, switching operation is initially done through adiabatic mode evolution in the Y-branch, and then a heated waveguide arm in the Y-branch can enter into the optical cut-off region if the temperature is sufficiently high. Using this phenomenon, low crosstalk performance is achieved. The proposed device has a crosstalk of −35 dB, while most integrated-optic switches with a single stage have a relatively high crosstalk in the region of −20 dB. The switching power of the proposed device is about 70 mW.     

Study of all-fiber flat-top passband interleaver based on 2 × 2 and 3 × 3 fiber couplers

An all-fiber interleaver of cascaded Mach-Zehnder interferometer (CMZI) using a 2 × 2 and three 3 × 3 fiber couplers with almost rectangular wavelength response is developed by using a new configuration. Based on the digital approximation method of Fourier series, the relationships among the coupling ratios of the couplers, the length difference of interference arms and the intensity transmission spectrum are analyzed. The results indicate that a uniform flat-top spectral response can be obtained by the configuration when the length difference of interference arms and the coupling coefficient of the couplers, with some certain values, are given. The passband and stopband of optical interleaver are improved remarkably. Compared with conventional CMZI using 2 × 2 fiber couplers, the most advantage of the present method is that the coupling ratio of couplers can be controlled accurately because the interference effect of the monitor light can be sheered away in the course of fabricating couplers. A novel structure of filter is fabricated by using the fused biconical taper technics in experiment. The experiment results are in good agreement with the analytical ones.     

64 GHz optical millimeter-wave generation by octupling 8 GHz local oscillator via a nested LiNbO3 modulator

A novel scheme to generate a 64 GHz optical millimeter (mm)-wave via a nested LiNbO₃ Mach-Zehnder modulator with an 8 GHz local oscillator is proposed and simulated. Since the frequency response of the modulator and the local oscillator frequency are greatly reduced, the bandwidth requirements of the optical and electrical components in the transmitter are significantly decreased. The simulation results show that the generated optical mm-wave signal maintains good performance even after being transmitted over 20 km standard single-mode fiber.     

光互连网络中四功能交换开关研究

由节点开关单元按照一定的连接规则所构成的光互连网络,在全光通信和光信息处理中具有重要的应用。基于节点开关一般实现光信号的直通和交换功能的特点,利用成熟的偏振光控制技术,通过位相型空间光调制器对信号光偏振态的控制,完成信号的路由和开关动作,从而设计出具有直通、交换、上播和下播功能的节点交换开关。与传统设计思想相比,该方法不仅能够充分利用信号光的能量,有效的减少光能量的损耗,而且还具有与偏振无关等特点。该四功能交换开关,对于优化和拓展光互连网络的结构和功能具有一定的意义。     

Longitude magneto optical Kerr effect of Fe/GaAs (0 0 1) with Al overlayers

The longitude magneto optical Kerr effect (LMOKE) is investigated on ultrathin Fe film grown on GaAs (0 0 1) substrate with Al overlayer. The formula of the longitude magneto optical Kerr effect is derived to find out the influence of the Al overlayer on the magneto optical properties of Fe/GaAs (0 0 1) sample. Results obtained from this formula fit very well with the experimental data. The change of the Kerr rotation as a function of the incident angle is also given, which can be used to find a proper angle in sample measurement. A numerical simulation was carried out to find out the relation between Kerr rotation and optical properties of the overlayer. Results from this simulation can be used to select the best overlayer material to protect the Fe/GaAs (0 0 1) sample.     

Fabrication of the slanted electrode matrix on tilting 4.5° (1 1 1) silicon

The slanted low electrode matrix is designed and fabricated on one tilting 4.5° (1 1 1) silicon wafer to reduce the actuating voltage of 8×8 micro-electromechanical systems (MEMS) optical switch matrix. Due to compact size of the upper electrode chip and (1 1 1) silicon anisotropic etching in KOH solution, photomask is designed which is to fabricate the slanted low electrode matrix that can be matched with the upper electrode chip and every slanted low electrode has enough space for actuating cantilever. The experimental results show that all of the applied voltages for the full range of actuating micromirrors of 8×8 MEMS optical switch matrix are in the range of 67.2±0.5 V. It is demonstrated that the fabricated slanted low electrode matrix has good consistency and every slanted low electrode can be precisely aligned with one-to-one corresponding upper electrodes.     

Structure of the oxidized 4H-SiC(0 0 0 1)-3 × 3 surface

We have determined the structure of the 4H-SiC(0 0 0 1)-3 × 3 surface after exposure to small amounts of molecular oxygen at room temperature using surface X-ray diffraction. The 3 × 3 reconstruction remains until at least an exposure of 10,000 L, but the diffracted intensities change, indicating structural changes. Comparison of the Patterson maps of the clean and oxidized surface shows that the main changes occur at the Si tetramer on top of the 3 × 3 surface. Atomic positions for several models were fitted to the experimental data. A model in which oxygen atoms are inserted into the Si tetramer gives the best fit to the experimental data. The best-fit atomic positions agree well with those obtained using density functional calculations.     

Soft X-ray appearance potential spectroscopy (SXAPS) study of TiO2(1 1 0)-1 × 2 and (0 0 1)-1 × 1 surfaces

A soft X-ray appearance potential spectroscopy (SXAPS) apparatus with high sensitivity was built to measure non-derivative spectra. SXAPS spectra (non-derivative) of Ti 2p and O 1s for TiO₂(1 1 0)-1 × 2 and (0 0 1)-1 × 1 surfaces have been measured using low incident currents (about 10 μA/cm²) and a photon counting mode. Density of empty states on Ti and O sites are deduced by self-deconvoluting the spectra. The self-deconvoluted SXAPS spectra are qualitatively similar to those measured by X-ray absorption spectroscopy (XAS). The Ti 2p_3/2 spectrum shows two strong peaks which correspond to t_2g and e_g states. For the O 1s spectrum two strong peaks near the threshold are also found which can be ascribed to O 2pπ and O 2pσ states. These results suggest that the spectra almost obey the dipole selection rule, so-called the “approximate dipole selection rule”. The SXAPS spectra of Ti 2p and O 1s for the (1 1 0) and (0 0 1) surfaces resemble qualitatively, which is consistent with the XAS results. The spectra measured on the (1 1 0)-1 × 2 surface at an incident angle of 45° off normal to the surface and on the (1 1 0) surface sputtered by Ar ions indicate that SXAPS is very sensitive to the surface electronic states.     

All - optical sampling with Sagnac switches using closed pump and signal wavelengths near 1 μm

The optical performance of a Polarization-Maintaining Sagnac switch can be optimized in a simple way by combining the measurement of the energy transfer function with proper modeling and numerical computations. We demonstrate the sampling capabilities with the help of the existing relationship between the expected power transfer function and the experimental data. The effects of coupled Group-Velocity-Dispersion and Self-Phase-Modulation are taken into account, in combination with the limitations in the Polarization-Extinction-Ratio of the loop. Given the rapid decrease of the peak power of the pump pulse along the active section of fiber, the sizing criteria involve the use of high pump powers and lengths of fiber which are shorter than 20 m. The demonstration is implemented with the help of a basic setup which involves two closed wavelengths, i.e. 1062 and 1053 nm for the pump and the signal. This gives the benefit of fast transition times and good polarization maintaining. Efficient optical all-sampling can thus be performed within a wide dynamic range in excess of 30 dB and with a sampling resolution in the range of 2 ps.     

Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1 0 0)-2 × 1 surfaces

The growth of Pb films on the Si(1 0 0)-2 × 1 surface has been investigated at low temperature using scanning tunneling microscopy. Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed. The island thickness is confined within four to nine atomic layers at low coverage. Among these islands, those with a thickness of six layers are most abundant. Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectroscopy. They are found to be identical to those taken on the Pb(1 1 1) islands grown on the Si(1 1 1)7 × 7 surface. Besides Pb(1 1 1) islands, two additional types of Pb islands are formed: rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90° from a terrace to the adjacent one. This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 × 1 substrate.     

Structure and electronic properties of gold adsorbed on Ti(0 0 0 1)

The Au/Ti(0 0 0 1) adsorption system was studied by low energy electron diffraction (LEED) and photoemission spectroscopy with synchrotron radiation after step-wise Au evaporation onto the Ti(0 0 0 1) surface. For adsorption of Au at 300 K, no additional superstructures were observed and the (1 × 1) pattern of the clean surface simply became diffuse. Annealing of gold layers more than 1 ML thick resulted in the formation of an ordered Au-Ti surface alloy. Depending on the temperature and annealing time, three surface reconstructions were observed by LEED: (√3 × √3) R30°, (2 × 2) and a one-dimensional incommensurate (√3 × √3) rectangular pattern. The Au 4f core level and valence band photoemission spectra provided evidence of a strong chemical interaction between gold and titanium. The data indicated formation of an intermetallic interface and associated valence orbital hybridization, together with diffusion of gold into the bulk. Au core-level shifts were found to be dependent on the surface alloy stoichiometry.     

GaN/LiNbO3 (0 0 0 1) interface formation calculated from first-principles

The stable adsorption sites for both Ga and N ions on the ideal and on the reconstructed LiNbO₃ (0 0 0 1) surface are determined by means of first-principle total energy calculations. A single N layer is found to be more strongly bound to the substrate than a single Ga layer. The adsorption of a GaN monolayer on the polar substrate within different orientations is then modeled. On the basis of our results, we propose a microscopic model for the GaN/LiNbO₃ interface. The GaN and LiNbO₃ (0 0 0 1) planes are parallel, but rotated by 30° each other, with in-plane epitaxial relationship [1 0 0]_GaN‖ [1 1  0]_LiNbO3. In this way the (0 0 0 1) plane lattice mismatch between GaN and LiNbO₃ is minimal and equal to 6.9% of the GaN lattice constant. The adsorbed GaN and the underlying LiNbO₃ substrate have parallel c-axes.     

Low threshold narrow pulse width eye-safe intracavity optical parametric oscillator at 1573 nm

We demonstrate a low threshold operation of a KTP-based intracavity optical parametric oscillator, emitting at 1573 nm, driven by a cw diode-end-pumped actively Q-switched Nd:YVO₄ laser. Diode-pump threshold around 0.86 W is achieved, which, to the best of our knowledge, is the lowest one under the similar experimental conditions. Owning to the efficient cavity-dumping effect, a signal pulse width as short as 1.4 ns and peak power higher than 3 kW is obtained, at the incident diode-pump power of 1.3 W and A-O modulating frequency of 9 kHz. Moreover, threshold characteristic for the IOPO is also studied, which is in well agreement with the experimental results.     

Comparative investigation of the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu2Si/Cu(1 1 1) surface alloys using DFT

The electronic structure of the c(2 × 2)-Si/Cu(0 1 1) surface alloy has been investigated and compared to the structures seen in the three phases of the (√3 × √3)R30°Cu₂Si/Cu(1 1 1) system, using LCAO-DFT. The weighted surface energy increase between the alloyed Cu(0 1 1) and Cu(1 1 1) surfaces is 126.7 meV/Si atom. This increase in energy for the (0 1 1) system when compared to the (1 1 1) system is assigned to the transition from a hexagonal to a rectangular local bonding environment for the Si ion cores, with the hexagonal environment being energetically more favorable. The Si 3s state is shown to interact covalently with the Cu 4s and 4p states whereas the Si 3p state, and to a lesser extent the Si 3d state, forms a mixture of covalent and metallic bonds with the Cu states. The Cu 4s and 4p states are shown to be altered by approximately the same amount by both the removal of Cu ion cores and the inclusion of Si ion cores during the alloying of the Cu(0 1 1) surface. However, the Cu 3d states in the surface and second layers of the alloy are shown to be more significantly altered during the alloying process by the removal of Cu ion cores from the surface layer rather than by the addition of Si ion cores. This is compared to the behavior of the Cu 3d states in the surface and second layers of the each phase of the (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloy and consequently the loss of Cu-Cu periodicity during alloying of the Cu(0 1 1) surface is conjectured as the driving force for changes to the Cu 3d states. The accompanying changes to the Cu 4s and 4p states in both the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloys are quantified and compared. The study concludes with a brief quantitative study of changes in the bond order of the Cu-Cu bonds during alloying of both Cu(0 1 1) and Cu(1 1 1) surfaces.     

Structure of the SiC (0 0 0 1) 3 × 3 reconstruction studied by surface X-ray diffraction

The surface structure of the 3 × 3 reconstruction of the 4H-SiC (0 0 0 1) surface was investigated with surface X-ray diffraction (SXRD).Of the studied models, the twist model proposed by Starke et al. [U. Starke, J. Schardt, J. Bernhardt, M. Franke, K. Reuter, H. Wedler, K. Heinz, J. Furthmuller, P. Kackell, F. Bechstedt, Phys. Rev. Lett. 80 (1998) 758] gave the best fit to the experimental data. The structural parameters were determined accurately.