Cw oscillation at 1.05 and 1.32 μm of LiNd(PO3)4 lasers in external resonator and in resonator with directly applied mirrors

The room temperature cw oscillation at 1.05 and 1.32 μm of lithium neodymium tetraphosphate [LiNd(PO₃)₄, LNP] lasers in an external resonator and, for the first time, also in a Fabry-Perot resonator with directly applied mirrors is reported. The growth and fluorescence properties of the LNP crystals are briefly described. Laser parameters such as threshold pump power, output power, differential efficiency, optical gain, emission cross section and laser modes are both measured and calculated. Laser experiments show the threshold pump power to be lower for 1.05 μm than for 1.32 μm emission because of the smaller emission cross section; the pump power density is lower for the external resonator than for the Fabry-Perot resonator because of its higher mode losses.     

Influence of cavity de-tuning in semiconductor microcavity LEDs

Data are presented showing the precise role of the cavity de-tuning on the emission properties of semiconductor microcavity light emitting diodes (MC-LEDs). Enhanced output power and narrow line width emission have been observed over a wide range of cavity de-tunings, with a power reduction of less than −1 dB observed for ±12 nm de-tuned devices. For a resonantly de-tuned MC-LED, the slope efficiency extracted from the power output versus current characteristics decreases monotonically with increasing temperature. However, for a MC-LED de-tuned +5.6 nm to long wavelength with respect to the room temperature quantum well (QW) peak, the extracted slope efficiencies vary by less than ±0.5 dB over a temperature range of greater than 65°C. Compared to a conventional LED, narrower beam divergence is observed for MC-LEDs de-tuned to short wavelength with respect to the bare QW peak. For positively de-tuned MC-LEDs the beam divergence broadens, and the far-field emission profiles exhibit a double-lobed pattern that is sensitive to pump level.     

Electric and plasma characteristics of RF discharge plasma actuation under varying pressures

The electric and plasma characteristics of RF discharge plasma actuation under varying pressure have been investigated experimentally. As the pressure increases, the shapes of charge–voltage Lissajous curves vary, and the discharge energy increases. The emission spectra show significant difference as the pressure varies. When the pressure is 1000 Pa,the electron temperature is estimated to be 4.139 e V, the electron density and the vibrational temperature of plasma are peak4.71×10~(11)cm~(-3) and 1.27 e V, respectively. The ratio of spectral lines I391.4/peak I380.5which describes the electron temperature hardly changes when the pressure varies between 5000–30000 Pa, while it increases remarkably with the pressure below 5000 Pa, indicating a transition from filamentary discharge to glow discharge. The characteristics of emission spectrum are obviously influenced by the loading power. With more loading power, both of the illumination and emission spectrum intensity increase at 10000 Pa. The pin–pin electrode RF discharge is arc-like at power higher than 33 W, which results in a macroscopic air temperature increase.     

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

The two-dimensional (2D) electron energy relaxation in Al_0.25Ga_0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T_e) of hot electrons was obtained from the lattice temperature (T_L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T_e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al_0.25Ga_0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.     

Systematic trends in the radiative emission rates for low- and medium-Z elements in high-temperature plasmas

The power radiated by an optically thin, low-density (N_e ≤ 10¹⁴ electrons/cm³) plasma has been calculated for the electron temperature range 1–10⁶ eV taking into account resonance line emission, direct recombination radiation, dielectronic recombination radiation, and bremsstrahlung from the ions of a given element. The ionization structure has been determined by using a corona equilibrium model in which collisional ionization and inner-shelled excitation followed by autoionization are balanced by direct radiative and dielectronic recombination. Based on the results for respresentative elements from carbon through nickel, graphs are presented of the maximum radiated power, the maximum emission temperature, and the mean charge at the maximum for each shell as functions of the atomic number Z. Assuming that the maximum emission temperature can be achieved, aluminum and iron are predicted to be the most efficient K-shell radiators for Z ≤28.     

Laser-excited spectra of Lu2SiO5:Ce scintillator

The emission spectra of Lu₂SiO₅:Ce single crystal under the excitation of 266 nm laser were investigated. The emission spectra of LSO single crystal show no temperature quenching from 20 to 300 K, under the excitation of 266 nm laser with 2 mJ pulse energy. With rising temperature, the Ce1 emission is slightly decreased, while the Ce2 emission is slightly increased. These results show the emissions of Ce1 and Ce2 is not only dependent on the concentration ratio but also influenced by the possible energy transfer processes, including Ce1 to Ce2, intrinsic STHs to Ce2 and the phonon-assisted transfer processes. The spectral thermal broadening and the spectral overlap become evident at high temperature, leading to the enhancement of energy transfer. When the excitation power lowers, the ratio of Ce1 and Ce2 emission increases, and is close to the Xe lamp ultraviolet (UV) excitation, suggesting that the energy transfer from Ce1 center to Ce2 center may be also dependent on the excitation power.     

Luminescence properties of SrSi2AlO2N3 doped with divalent rare-earth ions

The optical properties of SrSi₂AlO₂N₃ doped with Eu²⁺ and Yb²⁺ are investigated towards their applicability in LEDs. The Eu²⁺-doped material shows emission in the green, peaking around 500 nm. The emission is ascribed to the 4f⁶5d¹–4f⁷ transition on Eu²⁺. In view of the too low quantum efficiency and the considerable thermal quenching of the emission at the operation temperature of high power LED (>1W/mm²) this phosphor is only suitable for application in low power LEDs. The Yb²⁺ emission shows an anomalously red-shifted emission compared to Eu²⁺, which is characterized by a larger FWHM, a larger Stokes shift and lower thermal quenching temperature. The emission is ascribed to self-trapped exciton emission. The Yb²⁺ activated phosphor is found to be unsuitable for the use in any phosphor-converted LEDs.     

Strong exciton emission from ZnO microcrystal formed by continuous 532 nm laser irradiation

The Zinc oxide (ZnO) microcrystal is formed out of irradiated powder sample by a continuous-wave 532-nm laser with a high power of about 200 mW, and the microcrystal formation process is monitored by in situ Raman spectroscopy simultaneously. Scanning electron microscope image shows that multi-shaped ZnO microcrystal, including nano-rods and nano-flakes, is obtained near the brim of laser irradiated spot. The photoluminescence spectra of ZnO microcrystal are studied at both room temperature and low temperature of 10 K. With the ZnO microcrystal, we obtain that the peak intensity of near band-edge emission is at least 400 times stronger than that of deep-level emission at room temperature, and that up to fifth-order phonon replicas of free exciton emission are easily distinguished in the 10 K photoluminescence spectra. Both of them indicate that the ZnO microcrystal formed by intense laser irradiation has a very good crystalline structure.     

Exciton binding energies in II–VI compound strained layer superlattices

II–VI strained-layer superlattices are very efficient emitters of visible light. The dependence of the luminescence intensity on the excitation power density allows us to characterise the recombination processes involved in the emission. At low temperatures excitonic processes are dominant whereas electron-hole recombinations feature at room temperature. No special evidence of the dual nature of the emission is observed at intermediate temperatures because the optical transitions are broadened by well-width fluctuations. In spite of this we may estimate the exciton binding energy from the temperature dependence of the photoluminescence intensity, as long as the photoluminescence remains excitonic. This is the case for narrow wells in CdS---ZnS superlattices over the temperature range zero to room temperature. The estimated exciton binding energy measured in this way approaches the two dimensional limit but does not exceed it.     

Messungen am Ar-Hochdruckbogen

TheE(J)-characteristics, the radiated power, and the radial temperature distributions are measured in a 5 mm Ø Ar cascade arc in the pressure range 1–10 atms up to 590 A. The characteristics are determined by the quasistatic method, while the radiated power is recorded by a radiation thermocouple. The ratio of radiated to invested power as function of currentJ passes a maximum which rises up to 75% at 10 atms and 150 A. The temperature is evaluated from side-on registration of proper atom and ion line intensities by means of a photomultiplier. The highest axial temperature of 26000 K is achieved at atmospheric pressure; at higher pressures, the axial temperature falls. In order to investigate the frequency dependence of the continuum emission coefficient the spectral intensity of the continuum is measured at several wavelengths between 2400 and 8500 Å.     

Thermal and field emission effects of laser radiation on metal whisker diodes: Application to infrared detection devices

In a series of recent experiments, research groups have made absolute frequency measurements with laser beams in the infrared region of the spectrum (λ ? 10 μm) using a metal point contact diode for generation, frequency mixing and detection. It has been postulated that the mechanism for the nonlinear current-voltage characteristic of the diode is tunnelling of electrons through an intermediate oxide film from the whisker into the metal base, i.e., the configuration is considered to be a metal-oxide-metal (MOM) tunnelling junction. Several features of the diode's operation create considerable doubt concerning the applicability of the MOM tunnelling mechanism. Analysis of the available experimental data led us to postulate an alternate solid state mechanism, namely a thermally enhanced field emission process. Such emission would be a consequence of the immersion of the whisker tip in the laser radiation resulting in (1) conduction heating which induces thermionic emission and (2) generation of an electric field at the tip necessary for electron tunnelling by field emission. In this paper we calculate rigorously the power absorbed in the metal whisker from the incident radiation. From the power absorbed, the heat conduction equation is solved for model geometries to obtain the laser induced temperature distribution at the whisker surface. Estimates of the electric field are obtained and combined with temperature calculations to obtain the nonlinear I–V characteristics of the thermally enhanced field emission model. Finally some simple experiments are proposed to test the thermal field emission hypothesis as a possible mechanism to explain the nonlinear characteristics of the metal whisker point contact diode.     

Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots

Self-assembled InAs/GaAs (001) quantum dots (QDs) were grown by molecular beam epitaxy using ultra low-growth rate. A typical dot diameter of around 28 ± 2 nm and a typical height of 5 ± 1 nm are observed based on atomic force microscopy image. The photoluminescence (PL) spectra, their power and temperature dependences have been studied for ground (GS) and three excited states (1–3ES) in InAs QDs. By changing the excitation power density, we can significantly influence the distribution of excitons within the QD ensemble. The PL peak energy positions of GS and ES emissions bands depend on an excitation light power. With increasing excitation power, the GS emission energy was red-shifted, while the 1–3ES emission energies were blue-shifted. It is found that the full width at half maximum of the PL spectra has unusual relationship with increasing temperature from 9 to 300 K. The temperature dependence of QD PL spectra shown the existence of two stages of PL thermal quenching and two distinct activation energies corresponding to the temperature ranges I (9–100 K) and II (100–300 K).     

大气压射流等离子体中O及OH自由基的发射光谱在线诊断

OH自由基及氧原子在大气化学、表面处理及化学污染物分解等方面有着重要的作用。利用发射光谱技术在线测量了大气压射流等离子体中OH自由基紫外波段与O自由基777,844 nm波段的发射光谱。研究了OH自由基与氧原子光谱强度随放电功率及放电体系中所加入的氧浓度的变化。将实验测得的OH自由基光谱图与用Lifbase数据库模拟光谱图进行比较,估算了OH自由基的转动温度。结果表明:OH自由基的转动温度随放电功率的增加而增加,随工作气体流速的增加而减小。     

Growth,characterization and upconversion properties of erbium-doped potassium lithium tantalate niobate single crystals under 975 nm laser excitation

Potassium lithium tantalate niobate single crystals doped with erbium ions are grown by top-seeded solution growth method. The crystals are characterized by X-ray diffraction and differential thermal analysis. The refractive indices of the crystal are measured using ellipsometry method and fitted by Sellmeier equation. The as-grown crystals are tetragonal phase tungsten bronze-type structure with Curie temperature of 271.3 °C. Characteristic Er^3 + absorption bands are observed from 350 to 1100 nm in ultraviolet–visible-near infrared absorption spectra. These crystals emit brightly green and red upconversion fluorescence under 975 nm LD laser excitation, and the steady state upconversion spectra are obtained at room temperature. The red emission intensity increases as the erbium ions concentration increases in crystals. Processes of excited state absorption and energy transfer are responsible for upconversion luminescence. The emission intensities are quadratic dependences on pump power from pump power dependence analyses and deduction of transition rate equation model.     

CdSe/CdZnSe超晶格的激子光学性质的研究

用分子束外延法在GaAs衬底上生长了CdSe/Cd0.65Zn0.35Se超晶格结构。利用X射线衍射（XRD）、77K下变密度激发的光致发光光谱和变温度光致发光光谱研究了CdSe/CdZnSe超晶格结构和激光复合特性，在该材料中观测到激子－激子散射发射峰，变密度激发光致发光光谱和谱温度光致发光光谱证实了这一现象，激子发射峰的线宽随着温度的升高而展宽，低温时发光峰的宽度主要是由合金组分和阱垒起伏引起的，没温时激子线宽展宽是由于激子与纵光学声子和离化的施主杂质间的散射作用引起的，光致发光的强度随着温度的升高而降低，这主要是由激子的热离化造成的，也就是说，热激发使得电子或空穴由阱中跃迁至垒上。     

Evolution of vacuum ultraviolet emission in dual-frequency capacitively coupled plasmas

In plasma material processing, vacuum ultraviolet (VUV) emission is released from gas discharges, leading to undesirable results. Energetic VUV photons enable the creation of an electron-hole pair current when their energy is larger than the bandgap energy of the plasma-facing top layer during plasma material processing. For example, the high energy of VUV photons from helium (21.2 eV), argon (11.6 eV), and oxygen (13.6 eV) is sufficient to generate induced currents in SiO₂ thin films. These feedstock gases are widely used in many procedures utilizing low-temperature industrial plasmas. Thus, the VUV emission evolution with both the power ratio between high (60 MHz) and low (2 MHz) frequencies and pulse duty ratio of the low-frequency radio frequency (rf) power in a dual-frequency capacitively coupled plasma, which is indispensable in modern plasma etching processes, was investigated. Both the power ratio between high and low frequencies and the pulse duty ratio changed the electron temperature, leading to evolution of the VUV emission intensity.     

Millimeter-Wave Radiometry of the Temperature Film on a Sea Surface

Using in-situ measurements of thermal radio emission at frequencies 53–55 GHz from a rough sea surface in the coastal zone of the eastern Crimea shore, we obtain data on the water temperature at a depth of 0.2 mm and on the reflection characteristics of the sea surface. Measuring the intensity of radio emission from a surface irradiated by a signal with known variable power allows one to obtain simultaneous data on the temperature and reflection coefficient. In our experiment, the atmospheric radio emission in the wing of the molecular oxygen absorption band, received by frequency-separated channels of a radiometer–spectrometer, plays the role of such an irradiation. The measured water temperature T_SL=(5.4±1.0) °C turns out to be less than the air temperature and the in-depth water temperature. The reflection coefficient is equal to R=0.349±0.05.     

Discrimination of strain and temperature based on a polarization-maintaining photonic crystal fiber incorporating an erbium-doped fiber

A simple sensing method for simultaneous measurement of temperature and strain is investigated by using a Sagnac fiber loop mirror composed of a polarization-maintaining photonic crystal fiber (PM-PCF) incorporating an erbium-doped fiber (EDF). Amplified spontaneous emission created by a pumped EDF is transmitted to a Sagnac fiber loop mirror. The interference between two counter-propagating signals in a Sagnac fiber loop mirror generates a periodic transmission spectrum with respect to wavelength. When external temperature is increased, the transmission peak power reduces because the amplified spontaneous emission of the EDF is decreased by the applied temperature change (0.04 dB/°C). The peak wavelength is shifted into the shorter wavelength because of the negative temperature dependence of the birefringence of the PM-PCF (0.3 pm/°C). As the applied strain increases, the peak wavelength of the transmission spectrum of the Sagnac loop mirror incorporating the EDF shifts into a longer wavelength (1.3 pm/με) because the phase change of the proposed sensing probe is directly proportional to the applied strain. The transmission peak power, however, is not changed by the applied strain. Since the source and the sensing probe are integrated, the overall system configuration is significantly simplified without requiring any additional broadband light source. Therefore, it is possible to simultaneously measure temperature and strain by monitoring the variation of transmission peak power and peak wavelength, respectively.     

基于分子束外延生长的1.05 eV InGaAsP的超快光学特性研究

利用分子束外延方法制备了应用于四结光伏电池的1.05 eV InGaAsP薄膜, 并对其超快光学特性进行了研究. 温度和激发功率有关的发光特性表明: InGaAsP材料以自由激子发光为主. 室温下InGaAsP材料的载流子发光弛豫时间达到10.4 ns, 且随激发功率增大而增大. 发光弛豫时间随温度升高呈现S形变化, 在低于50 K时随温度升高而增大, 在50–150 K之间时减小, 而温度高于150 K时再次增大. 基于载流子弛豫动力学, 分析并解释了温度及非辐射复合中心浓度对样品材料载流子发光弛豫时间S形变化的影响.