Optical and electrical characterization of cadmium selenide doped with cobalt

The optical and electrical properties of Co²⁺ ions in CdSe have been investigated. Absorption, photoluminescence, electron paramagnetic resonance, and Hall measurements were used to characterize a cobalt-doped (1×10¹⁹ cm⁻³) single crystal. Infrared absorption and emission spectra associated with transitions between the ⁴A₂(F) ground state and the ⁴T₁(F) and ⁴T₂(F) excited states are described. At 10 K, spin-orbit splittings result in three structured absorption bands associated with the ⁴A₂(F) to ⁴T₁(F) transition having zero-phonon lines at 4926, 5101, and 5724 cm⁻¹. The ⁴A₂(F) to ⁴T₂(F) transition shows two zero-phonon lines at 2874 and 3286 cm⁻¹, also accompanied by vibronic structure. Intrinsic lattice modes explain most of the sharp-line structure observed at low temperature, except for a subset of peaks where local modes (25-30 cm⁻¹) are invoked. Using below-band-gap light, selective excitation allows detection of the ⁴T₁(F) to ⁴A₂(F) recombination at liquid-helium temperatures. The activation of free carriers in our n-type material containing shallow donors is affected by the presence of cobalt, and we find the Co^+/++ level to be about 34 meV below the conduction band of CdSe.     

Infrared emission studies of the AΣ-XΠ electronic transition of the SiC radical

The gas phase infrared emission spectrum of the A³Σ⁻-X³Π electronic transition of SiC has been observed using a high resolution Fourier transform spectrometer. Three bands ν′ − ν″ = 0-1, 0-0, and 1-0 have been observed in the 2770, 3723, and 4578 cm⁻¹ regions, where the 0-1 and 0-0 bands were observed for the first time. The SiC radical was generated by a dc discharge in a flowing mixture of hexamethyl disilane [(CH₃)₆Si₂] and He. A total of 1074 rotational transitions assigned to the 0-1, 0-0, and 1-0 bands have been combined in a simultaneous analysis with previously reported pure rotational data to determine the molecular constants for SiC in the two electronic states. The principal equilibrium molecular constants for the A³Σ⁻ state are: B_e = 0.6181195(18) cm⁻¹, α_e = 0.0051921(20) cm⁻¹, r_e = 1.8020884(26) Å, and T_e = 3773.31(17) cm⁻¹, with one standard deviation given in parentheses. The effect of a perturbation was recognized between the ν = 4 level of X³Π and the ν = 0 level of A³Σ, and the analysis was carried out to determine the interaction parameter between the two states.     

Single crystal EPR and optical absorption study of Cr doped l-histidine hydrochloride monohydrate

EPR study of the Cr³⁺ ion doped l-histidine hydrochloride monohydrate single crystal is done at room temperature. Two magnetically inequivalent interstitial sites are observed. The hyperfine structure for Cr⁵³ isotope is also obtained. The zero field and spin Hamiltonian parameters are evaluated from the resonance lines obtained at different angular rotations and the parameters are: D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.9108±0.0002, g_y=1.9791±0.0002, g_z=2.0389±0.0002, A_x=(252±2)×10⁻⁴ cm⁻¹, A_y=(254±2)×10⁻⁴ cm⁻¹, A_z=(304±2)×10⁻⁴ cm⁻¹ for site I and D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.8543±0.0002, g_y=1.9897±0.0002, g_z=2.0793±0.0002, A_x=(251±2)×10⁻⁴ cm⁻¹, A_y=(257±2)×10⁻⁴ cm⁻¹, A_z=(309±2)×10⁻⁴ cm⁻¹ for site II, respectively. The optical absorption studies of single crystals are also carried out at room temperature in the wavelength range 195-925 nm. Using EPR and optical data, different bonding parameters are calculated and the nature of bonding in the crystal is discussed. The values of Racah parameters (B and C), crystal field parameter (Dq) and nephelauxetic parameters (h and k) are: B=636, C=3123, Dq=2039 cm⁻¹, h=1.46 and k=0.21, respectively.     

Fourier transform emission spectroscopy of the EΠ-XΣ transition of CaH and CaD

The emission spectra of CaH and CaD have been recorded at high resolution using a Fourier transform spectrometer and bands belonging to the E²Π-X²Σ⁺ transition have been measured in the 20 100-20 700 cm⁻¹ region. A rotational analysis of 0-0 and 1-1 bands of both the isotopologues has been carried out. The present measurements have been combined with the previously available pure rotation and vibration-rotation data to provide improved spectroscopic constants for the E²Π state. The constants ΔG(½) = 1199.8867(34) cm⁻¹, B_e = 4.345032(49) cm⁻¹, α_e = 0.122115(92) cm⁻¹, r_e = 1.986633(11) Å for CaH, and ΔG(½)=868.7438(46) cm⁻¹, B_e = 2.212496(51) cm⁻¹, α_e = 0.036509(97) cm⁻¹, r_e = 1.993396(23) Å for CaD have been determined.     

The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

The current-voltage (I-V) characteristics of Al/p-Si Schottky barrier diodes (SBDs) with native insulator layer were measured in the temperature range of 150-375 K. The estimated zero-bias barrier height Φ_B0 and the ideality factor n assuming thermionic emission (TE) theory show strong temperature dependence. Evaluation of the forward I-V data reveals an increase of zero-bias barrier height Φ_B0 but decrease of ideality factor n with increase in temperature. The conventional Richardson plot exhibits non-linearity below 250 K with the linear portion corresponding to activation energy of 0.41 eV and Richardson constant (A^*) value of 1.3 × 10⁻⁴ A cm⁻² K⁻² is determined from intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 A cm² K² for holes in p-type Si. Such behavior is attributed to Schottky barrier inhomogene ties by assuming a Gaussian distribution of barrier heights (BHs) due to barrier height inhomogeneities that prevail at interface. Also, Φ_B0 versus q/2kT plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ_B0 = 1.055 eV and σ₀ = 0.13 V for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Thus, the modified versus q/kT plot gives Φ_B0 and A^* as 1.050 eV and 40.08 A cm⁻² K⁻², respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 40.03 A cm⁻² K⁻² is very close to the theoretical value of 32 A K⁻² cm⁻² for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Al/p-Si Schottky barrier diodes with native insulator layer can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights.     

Thermally stimulated current study of electron-irradiation induced defects in semi-insulating InP obtained by multiple-step wafer annealing

Electron-irradiation induced defects in semi-insulating (SI) InP wafers with Fe concentration ranging from 1.5×10¹⁵ to 2.5×10¹⁵ cm⁻³, which have been obtained by multiple-step wafer annealing (MWA) under phosphorus vapor pressure, were studied using a thermally stimulated current (TSC) method. New traps, e₁, e₂, e₃, e₄ and e₅, with activation energies of 0.22, 0.28, 0.37, 0.44 and 0.46 eV, respectively, were observed. Based upon the annealing behavior of traps and the calculated defect levels, traps e₁ and e₅ produced by the irradiation with electron doses above 1×10¹⁵ cm⁻² were linked to In_P and P_In antisite defects, respectively, that probably form complexes. Traps e₃ and e₄ produced by the irradiation with doses above 1×10¹⁴ cm⁻² were associated with In and P vacancy related defects, respectively.     

Preparation and characterization of CdS/Si coaxial nanowires

CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140 nm and c=0.6719 nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305 cm⁻¹, 2LO at 601 cm⁻¹, A₁-TO at 212 cm⁻¹, E₁-TO at 234 cm⁻¹, and E₂ at 252 cm⁻¹. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590 nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively.     

ESR and optical study of Mn doped potassium hydrogen sulphate

The ESR spectrum of Mn²⁺ doped potassium hydrogen sulphate at liquid nitrogen temperature (77 K) has been analyzed and site of entered Mn²⁺ in the lattice has been discussed. The values of the zero field parameters that give good fit to the observed ESR spectra have been obtained. The obtained g, A, B, D, E and a values are 2.0002, 66×10⁻⁴ cm⁻¹, 26×10⁻⁴ cm⁻¹, 59×10⁻⁴ cm⁻¹, 32×10⁻⁴ cm⁻¹ and −8×10⁻⁴ cm⁻¹, respectively. The percentage of covalency of the metal-ligand bond has also been estimated. From the optical absorption study at room temperature, the distortion has been suggested. The observed bands are assigned as transitions from the ⁶A_1g(S) ground state to various excited quartet levels of Mn²⁺ ion in a cubic crystalline field. The electron repulsion and crystal field parameters B, C, Dq and α providing good fit to the observed optical spectra have been evaluated and the values obtained for the parameters are B=627 cm⁻¹, C=2580 cm⁻¹ , Dq=790 cm⁻¹ and α=76 cm⁻¹.     

The ν4 and ν2 + ν5 high resolution infrared bands of FClO3 and FClO3

The high resolution infrared spectra of monoisotopic F³⁵Cl¹⁸O₃ and F³⁷Cl¹⁸O₃ have been studied in the region of the ν₄ fundamentals, centered at 1278.3 and 1263.3 cm⁻¹, respectively. Large perturbations are observed in both bands due to a Fermi type anharmonic resonance with the ν₂ + ν₅ combination bands, centered at 1270.7 cm⁻¹ in F³⁵Cl¹⁸O₃ and 1257.3 cm⁻¹ in F³⁷Cl¹⁸O₃. In particular, they affect the kl > 0 levels of the v₄ = 1 and v₂ = v₅ = 1 states which cross at kl ? 18 in F³⁵Cl¹⁸O₃ and kl ? 3 in F³⁷Cl¹⁸O₃, due to the opposite values of and . The Δl = Δk = ±2 and Δl = 0, Δk = ±3 essential resonances are also effective in the excited states of the dyad in F³⁵Cl¹⁸O₃, while in F³⁷Cl¹⁸O₃ only the Δl = Δk = ±2 one is active. In the spectrum of F³⁵Cl¹⁸O₃ 3423 transitions have been assigned, 10% of them belonging to ν₂ + ν₅. The rovibrational parameters and the interaction constants between the v₄ = 1 and v₂ = v₅ = 1 levels have been obtained. The depertubed band origins of ν₄ and ν₂ + ν₅ are 1277.310567(165) and 1271.753733(195) cm⁻¹, respectively, and the anharmonic resonance constant is 2.804416(153) cm⁻¹. For F³⁷Cl¹⁸O₃, 3022 transitions have been assigned, 38% belonging to the ν₂ + ν₅ combination band. The depertubed band origins are 1260.856338(123) and 1259.872338(134) cm⁻¹, for ν₄and ν₂ + ν₅ and the constant is 2.9350669(405) cm⁻¹. The equilibrium geometry of perchloryl fluoride, r_e (ClO) = 139.7(3) pm, r_e (ClF) = 161.0(5) pm, and α_e (OClO) = 115.7(4) degree, has been determined using the A_e and B_e equilibrium constants of the four symmetric isotopologues of perchloryl fluoride, F^35/37Cl¹⁶O₃ and F^35/37Cl¹⁸O₃.     

Femtosecond laser-induced damage of gold films

Single- and multi-shot ablation thresholds of gold films in the thickness range of 31-1400 nm were determined employing a Ti:sapphire laser delivering pulses of 28 fs duration, 793 nm center wavelength at 1 kHz repetition rate. The gold layers were deposited on BK7 glass by an electron beam evaporation process and characterized by atomic force microscopy and ellipsometry. A linear dependence of the ablation threshold fluence F_th on the layer thickness d was found for d ≤ 180 nm. If a film thickness of about 180 nm was reached, the damage threshold remained constant at its bulk value. For different numbers of pulses per spot (N-on-1), bulk damage thresholds of ∼0.7 J cm⁻² (1-on-1), 0.5 J cm⁻² (10-on-1), 0.4 J cm⁻² (100-on-1), 0.25 J cm⁻² (1000-on-1), and 0.2 J cm⁻² (10000-on-1) were obtained experimentally indicating an incubation behavior. A characteristic layer thickness of L_c ≈ 180 nm can be defined which is a measure for the heat penetration depth within the electron gas before electron-phonon relaxation occurs. L_c is by more than an order of magnitude larger than the optical absorption length of α⁻¹ ≈ 12 nm at 793 nm wavelength.     

Resonantly enhanced three-photon excitation spectra of lithium

We present the first measurement on the resonantly enhanced three-photon excitation spectra of natural lithium using a Nd:YAG laser pumped dye laser in conjunction with a thermionic diode ion detector. Exploiting the linear and circular polarizations, the np ²P_3/2(8 ? n ? 11) and nf  ²F_7/2 (8 ? n ? 38) series have been observed via three-photon excitation from the ground state. The measured level energies reveal a dynamic shift from calculated values, which increases with an increase of the principal quantum number n. The ac stark shift and line broadening mechanisms are studied as a function of laser intensity. It is noted that the width increases and the line center shifts towards the higher energy side as the laser intensity is increased. The maximum observed shift for the 12f ²F_7/2 line is 0.33 cm⁻¹ corresponding to the laser intensity variation from 1.34 × 10¹² W/m² to 1.03 × 10¹³ W/m², whereas its width increases from 0.36 cm⁻¹ to 0.82 cm⁻¹.     

The size and strain effects on the Raman spectra of Ce1−xNdxO2−δ (0≤x≤0.25) nanopowders

Ultrafine Ce_1−xNd_xO_2−δ (x=0-0.25) powders were synthesized by self-propagating room temperature synthesis. Raman spectra were measured at room temperature in the 300-700 cm⁻¹ spectral range. The shift and asymmetric broadening of the Raman F_2g mode at about 454 cm⁻¹ in pure and doped ceria samples could be explained with combined size and inhomogenous strain effects. Increased concentration of O²⁻ vacancies with doping is followed by an appearance of new Raman feature at about 545 cm⁻¹.     

Preparation, structure and oxide ion conductivity in Ce6−xYxMoO15−δ (x=0.1-1.4) solid solutions

The Ce_6−xY_xMoO_15−δ solid solution with fluorite-related structure have been characterized by differential thermal analysis/thermogravimetry (DTA/TG), X-ray diffraction (XRD), IR, Raman, scanning electric microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) methods. The electric conductivity of samples is investigated by Ac impedance spectroscopy. An essentially pure oxide-ion conductivity of the oxygen-deficiency was observed in pure argon, oxygen and air. The highest oxygen-ion conductivity was found in Ce_5.5Y_0.5MoO_15−δ ranging from 5.9×10⁻⁵ (S cm⁻¹) at 300 °C to 1.3×10⁻² (S cm⁻¹) at 650 °C, respectively. The oxide-ion conductivities remained stable over 80 h-long test at 800 °C. These properties suggested that significant oxide-ionic conductivity exists in these materials at moderately elevated temperatures.     

High-resolution infrared and theoretical study of the fundamental bands ν6, ν7, ν9 and ν13 of 1,2,3-thiadiazole

The Fourier transform gas-phase IR spectrum of 1,2,3-thiadiazole, C₂H₂N₂S, has been recorded with a resolution of ca. 0.003 cm⁻¹ in the 700-1100 cm⁻¹ spectral region. Four fundamental bands ν₆(A^/; 1101.8 cm⁻¹), ν₇(A^/; 1038.8 cm⁻¹), ν₉(A^/, 858.9 cm⁻¹), and ν₁₃(A^//; 746.2 cm⁻¹) have been analyzed using the Watson model in A-reduction. Two additional bands, ν₈ (A^/; 894.6 cm⁻¹) and ν₁₂(A^//; 881.2 cm⁻¹) were assigned by their weak Q-branches. Ground state rotational and quartic centrifugal distortion constants as well as upper state spectroscopic constants have been obtained from fits. A number of weak global and local interactions are present in the bands. The resonances identified were qualitatively explained by Coriolis type perturbations with neighboring levels. Ground state rotational and quartic centrifugal distortion constants, anharmonic frequencies, and vibration-rotational α-constants predicted by quantum chemical calculations using a cc-pVTZ basis and B3LYP methodology, have been compared with the present experimental data, where there is generally good agreement.     

Physical properties of the cubic spinel LiMn2O4

We have performed an ab initio study of structural, electronic, magnetic, vibrational and thermal properties of the cubic spinel LiMn₂O₄ by employing the density functional theory, the linear-response formalism, and the plane-wave pseudopotential method. An analysis of the electronic structure with the help of electronic density of states shows that the density of states at the Fermi level (N (E_F)) is found to be governed by the Mn 3d electrons with some contributions from the 2p states of O atoms. It is important to note that the contribution of Mn 3d states to N(_EF)$N\left(E_F\right)$ is as much as 85%. From our phonon calculations, we have obtained that the main contribution to phonon density of states (below 250 cm⁻¹) comes from the coupled motion of Mn and O atoms while phonon modes between 250 cm⁻¹ and 375 cm⁻¹ are characterized by the vibrations of all the three types of atoms. The contribution from Li increases rapidly at higher frequency (above 375 cm⁻¹) due to the light mass of this atom. Finally, the specific heat and the Debye temperature at 300 K are calculated to be 249.29 J/mol K and 820.80 K respectively.     

Fourier transform infrared emission spectra of MnH and MnD

Fourier transform infrared emission spectra of MnH and MnD were observed in the ground X⁷Σ⁺ electronic state. The vibration-rotation bands from v = 1 → 0 to v = 3 → 2 for MnH and from v = 1 → 0 to v = 4 → 3 for MnD were recorded at an instrumental resolution of 0.0085 cm⁻¹. Spectroscopic constants were determined for each vibrational level and equilibrium constants were found from a Dunham-type fit. The equilibrium vibrational constant (ω_e) for MnH was found to be 1546.84518(65) cm⁻¹, the equilibrium rotational constant (B_e) is 5.6856789(103) cm⁻¹ and the eqilibrium bond distance (r_e) was determined to be 1.7308601(47) Å.     

The effect of Cu substitution on the A1g mode of La0.7Sr0.3MnO3 manganites

We report on the first Raman data of Cu substituted La_1−ySr_yMn_1−xCu_xO₃ (0≤x≤0.10 and 0.17≤y≤0.3, accordingly in order to have the same Mn⁴⁺/[Mn⁴⁺+Mn³⁺] ratio), collected in the frequency range 100-900 cm⁻¹ and at room temperature, with parallel (e_i∥e_s) and crossed (e_i⊥e_s) polarizations of the incident (e_i) and scattered (e_s) light. Spectra were fitted with a Drude-Lorentz model, and peaks at 190-220 and 430 cm⁻¹, together with two broad structures centered at near 500 and 670 cm⁻¹, have been found. We also have observed that the A_1g mode is substantially shifted with increasing Cu substitution. The A_1g phonon shift is a linear function of the tolerance factor t and the rhombohedral angle α_r, thus following the structural changes of the MnO₆ octahedra in the system.     

The electronic spectrum of the SiC radical: A theoretical study

Electronic structure and spectroscopic properties of the low-lying electronic states of the SiC radical have been determined from the ab initio based configuration interaction calculations. Potential energy curves of 32 Λ-S states of singlet, triplet, and quintet spin multiplicities have been constructed. Spectroscopic constants (r_e, T_e, and ω_e) of 23 states within 6 eV are reported and compared with the existing data. The dipole moments (μ_e) of most of these states at their respective equilibrium bond lengths have been computed. Effects of the spin-orbit coupling on the spectroscopic properties of SiC have been studied. The E³Π state is found to be an important one which has not been studied before. A transition of the type E³Π-X³Π is predicted to take place in the range 25 000-26 000 cm⁻¹. The partial radiative lifetimes for several electric dipole allowed transitions such as A³Σ⁺-X³Π, B³Σ⁺-X³Π, C³Π-X³Π, D³Δ-X³Π, E³Π-X³Π etc. have been reported.     

Pressure dependence of spectral positions and widths of emission lines related to DJ→FJ electronic transitions in Sm ions doped into SrFCl single crystal

The pressure dependence of the peak positions and widths of the fluorescence lines corresponding to the ⁵D_J→⁷F_J electronic transitions in Sm²⁺-doped SrFCl crystals was measured at room temperature (RT) with a diamond anvil cell (DAC) and a high-pressure gas system, using silicone oil and gaseous helium as the pressure-transmitting medium, respectively. At RT and ambient pressure the electronic transitions ⁵D₀→⁷F_J (J= 0, 1, 2, 3) and ⁵D₁→⁷F_J (J=0, 1, 2) in Sm²⁺ ions yielded rather sharp spectral lines peaked at 14490, 14206, 13685, 13012 cm⁻¹ and 15823, 15533, 15012 cm⁻¹, respectively. At pressures up to 45 kbar in the DAC all these peaks shifted linearly to lower energies at the rates −2.36, −2.10, −2.43, −2.22 cm⁻¹/kbar and −2.35, −2.33, −2.47 cm⁻¹/kbar. Under purely hydrostatic gas pressure up to 7 kbar at RT the initial (normal pressure) widths of the ⁵D₀→⁷F₀, ⁵D₀→⁷F₁ and ⁵D₁→⁷F₀ lines having a Lorentzian profile (with corrected FWHM values of 1.55, 5.71 and 1.97 cm⁻¹) decreased linearly with increasing pressure at the rates −0.009(2), −0.077(3) and −0.034(2) cm⁻¹/kbar, respectively. Possible mechanisms of the observed pressure effects are discussed. For further studies of linewidth variations with the pressure, gaseous helium as a best possible high-pressure medium is strongly recommended.     

Fourier transform spectroscopy of NbS

Emission bands attributed to the NbS radical have been observed in the near infrared and visible regions with FTS techniques using an electrodeless 2450 MHz discharge as a source. Transitions within the doublet and quartet manifolds were recorded at high resolution. The present paper gives the first rotational analysis of this molecule. Numerous bands within the doublet and quartet manifolds have been analyzed, resulting in the characterization of seven different electronic states, three in the doublet and four in the quartet manifold. The states have been labeled in analogy with NbO. The analyzed electronic states are: X⁴Σ⁻, C⁴Σ⁻, A′⁴Φ, D⁴Δ, a²Δ, c²Π, and e²Φ. Four additional substates in the doublet manifold have also been analyzed. In all, 27 vibrational sublevels have been included in the analysis, the total number of rotational lines being about 18 000. The positions of the analyzed transitions are: C⁴Σ⁻ → X⁴Σ⁻ near 15 670 cm⁻¹, D⁴Δ → A′⁴Φ near 7740 cm⁻¹, c²Π → a²Δ near 5850 cm⁻¹ and e²Φ → a²Δ near 8500 cm⁻¹. The overall picture is consistent with the corresponding analysis of NbO. However, three energy separations could not be derived from the experimental data in the case of NbS, i.e., the a²Δ− X⁴Σ⁻, A′⁴Φ− X⁴Σ⁻ and a²Δ_5/2-a²Δ_3/2 splittings. These were set to 4992, 5490, and 992 cm⁻¹, respectively, from preliminary ab initio calculations. In this way, a tentative energy level scheme could be drawn. The first order spin-orbit parameter of the A′⁴Φ state was indeterminable from the experimental data and was set to the value 170 cm⁻¹, derived from the same calculations.