Structural and photoluminescence properties of terbium-doped zinc oxide nanoparticles

We present in this paper a study of the structural and photoluminescence （PL） properties of terbium （Tb） doped zinc oxide （ZnO） nanoparticles synthesized by a simple low temperature chemical precipitation method, using zinc acetate and terbium nitrate in an isopropanol medium with diethanolamine （DEA） as the capping agent at 60 ℃. The as-prepared samples were heat treated and the PL of the annealed samples were studied. The prepared nanoparticles were characterized with X-ray diffraction （XRD）. The XRD patterns show the pattern of typical ZnO nanoparticles and correspond with the standard XRD pattern given by JCPDS card No. 36-1451, showing the hexagonal phase structure. The PL intensity was enhanced due to Tb^3＋ doping, and it decreased at higher concentrations of Tb^3＋ doping after reaching a certain optimum concentration. The PL spectra of Tb^3＋ doped samples exhibited blue, bluish green, and green emissions at 460 nm （5^D3 - 7^F3）, 484 nm （5^D4 - 7^F6）, and 530 nm （5^D4 - 7^F5）, respectively, which were more intense than the emissions for the undoped ZnO sample. Based on the results, an energy level schematic diagram was proposed to explain the possible electron transition processes.     

Structural, morphological and photoluminescence properties of W-doped ZnO nanostructures

W-doped ZnO nanostructures were synthesized at substrate temperature of 600 °C by pulsed laser deposition (PLD), from different wt% of WO₃ and ZnO mixed together. The resulting nanostructures have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence for structural, surface morphology and optical properties as function of W-doping. XRD results show that the films have preferred orientation along a c-axis (0 0 L) plane. We have observed nanorods on all samples, except that W-doped samples show perfectly aligned nanorods. The nanorods exhibit near-band-edge (NBE) ultraviolet (UV) and violet emissions with strong deep-level blue emissions and green emissions at room temperature.     

Structural and photoluminescence properties of ZnO nanoparticles on silicon oxide

Isolated, self assembled ZnO nanoparticles are grown in two steps: by the electron beam evaporation of Zn on oxidised silicon wafers, during which isolated Zn nanodots are grown, and a subsequent annealing in oxygen that results in the desired ZnO nanodots. Low temperature PL measurements of the ZnO nanodots show that the near band edge part of the spectra is dominated by a zero phonon line near 3.36 eV which is an overlap of two emitting lines near 3.363 eV and 3.367 eV. Characterization by TEM and EELS shows that the nanoparticles are zinc oxide single crystals grown with their c-axis perpendicular to the substrate; their distribution, size and crystallinity depend on the deposition parameters of zinc and the growth substrate. We discuss the effect of these parameters on the morphology of the resulting material. Our approach demonstrates a simple method for the growth of high purity isolated ZnO nanodots of similar sizes, distributed uniformly on a large surface. PACS 61.46.Df; 81.05.Dz; 81.07.-b     

Photoluminescence and Raman scattering in spatially inhomogeneous heteroepitaxial InGaN layers

Spatial inhomogeneities of the indium distribution in In _x Ga_1–x N epitaxial layers grown on sapphire substrate with a GaN buffer layer were investigated using photoluminescence (PL) in addition to confocal scanning Raman spectroscopy (RS) and PL. Broad emission bands from In-enriched InGaN nanoclusters (700–900 nm) and from the volume outside the clusters (about 460 nm) were observed in PL spectra of an epitaxial InGaN layer with an average In content of 25.7%. It was established that larger micro-PL intensities corresponded to energetically shallower clusters. The observed broadly asymmetric A₁(LO) RS band of InGaN confirmed that the In concentration in the layer was highly variable. Modeling the LO phonon band by two Lorentzian curves gave an average In concentration of 21% in the volume outside the clusters and 37% in the nanoclusters, which was considerably higher than the average concentration in the layer and agreed well with their PL band positions.     

Structural, Raman, and photoluminescence characteristics of ZnO nanowires coated with Al-doped ZnO shell layers

Al-doped ZnO (AZO) shell layers were coated on core ZnO nanowires to fabricate ZnO/AZO core–shell nanowires. The energy-dispersive X-ray spectra confirmed the presence of Al element in the shell layers, and the lattice resolved transmission electron microscopy image revealed that these layers corresponded to the hexagonal ZnO structure. The X-ray diffraction pattern exhibited a shift of the ZnO peaks, suggesting the substitutive incorporation of Al into the ZnO lattice. The A₁(LO) mode line in the Raman spectra was enhanced by the AZO coating. In the photoluminescence measurements, the AZO coating enhanced the intensity ratio of the UV to green emission.     

Structural evolution,growth mechanism and photoluminescence properties of CuWO4 nanocrystals

Copper tungstate (CuWO₄) crystals were synthesized by the sonochemistry (SC) method, and then, heat treated in a conventional furnace at different temperatures for 1 h. The structural evolution, growth mechanism and photoluminescence (PL) properties of these crystals were thoroughly investigated. X-ray diffraction patterns, micro-Raman spectra and Fourier transformed infrared spectra indicated that crystals heat treated and 100 °C and 200 °C have water molecules in their lattice (copper tungstate dihydrate (CuWO₄·2H₂O) with monoclinic structure), when the crystals are calcinated at 300 °C have the presence of two phase (CuWO₄·2H₂O and CuWO₄), while the others heat treated at 400 °C and 500 °C have a single CuWO₄ triclinic structure. Field emission scanning electron microscopy revealed a change in the morphological features of these crystals with the increase of the heat treatment temperature. Transmission electron microscopy (TEM), high resolution-TEM images and selected area electron diffraction were employed to examine the shape, size and structure of these crystals. Ultraviolet–Visible spectra evidenced a decrease of band gap values with the increase of the temperature, which were correlated with the reduction of intermediary energy levels within the band gap. The intense photoluminescence (PL) emission was detected for the sample heat treat at 300 °C for 1 h, which have a mixture of CuWO₄·2H₂O and CuWO₄ phases. Therefore, there is a synergic effect between the intermediary energy levels arising from these two phases during the electronic transitions responsible for PL emissions.     

Structural,dielectric and photoluminescence properties of co-precipitated Zn-doped SnO2 nanoparticles

Zn-doped SnO₂ nanoparticles were prepared by the chemical co-precipitation route. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses of these prepared nanoparticles were carried out for structural and morphological studies. All the samples have been found to have tetragonal rutile structure of the polycrystalline SnO₂ having crystallite size in the range 13–25 nm. TEM micrographs show agglomeration of nanoparticles in all the samples. At a particular temperature, the dielectric constant of all the samples has been found to decrease with increasing frequencies which may be due to rapid polarization processes occurring in SnO₂ nanoparticles. The ac conductivity, σ (ω), has been found to vary with frequency according to the relation σ (ω) ∝ ω^S. The value of S has been found to be temperature dependent, decreasing with increasing frequency which suggests that a hopping process is the most likely conduction mechanism in these nanoparticles. The room temperature photoluminescence (PL) spectra of the undoped and Zn-doped SnO₂ nanoparticles consist of the near band-edge ultraviolet (UV) emission and the defect related visible emissions. The origin of emission peaks in the visible region is attributed to oxygen-related defects that are introduced during growth.     

Practical interpretation of X-ray rocking curves from semiconductor heteroepitaxial layers

X-ray rocking curves are widely used to study semiconductor heteroepitaxial structures. Examples are given of the use of rocking curves to investigate crystal growth problems, determine layer growth rates, confirm layer thicknesses and to determine the state of relaxation in layers which are above the critical thickness. The application of dynamic simulation and Fourier transformation to the raw data as tools to interpret data from multilayer structures is discussed.     

基于分子束外延生长的1.05 eV InGaAsP的超快光学特性研究

利用分子束外延方法制备了应用于四结光伏电池的1.05 eV InGaAsP薄膜, 并对其超快光学特性进行了研究. 温度和激发功率有关的发光特性表明: InGaAsP材料以自由激子发光为主. 室温下InGaAsP材料的载流子发光弛豫时间达到10.4 ns, 且随激发功率增大而增大. 发光弛豫时间随温度升高呈现S形变化, 在低于50 K时随温度升高而增大, 在50–150 K之间时减小, 而温度高于150 K时再次增大. 基于载流子弛豫动力学, 分析并解释了温度及非辐射复合中心浓度对样品材料载流子发光弛豫时间S形变化的影响.     

Electron probe microanalysis of HgCdTe heteroepitaxial structures with CdTe buffer layers

Some results of electron probe microanalysis of HgCdTe heteroepitaxial structures with wide-gap semiconductor CdTe buffer layers are described. It is shown that these structures may be used for manufacturing high-performance photodetectors for registration of infrared radiation in the ranges of 3–5 and 8–12 μm.     

Structural and optical characterization of GaN heteroepitaxial films on SiC substrates

We have estimated the threading dislocation density and type via X-ray diffraction and Williamson-Hall analysis to elicit qualitative information directly related to the electrical and optical quality of GaN epitaxial layers grown by PAMBE on 4H- and 6H-SiC substrates. The substrate surface preparation and buffer choice, specifically: Ga flashing for SiC oxide removal, controlled nitridation of SiC, and use of AlN buffer layers all impact the resultant screw dislocation density, but do not significantly influence the edge dislocation density. We show that modification of the substrate surface strongly affects the screw dislocation density, presumably due to impact on nucleation during the initial stages of heteroepitaxy.     

Structural and optical properties of layers of pentacene formed by PLD method

Organic films fabrication offers the possibility of producing electronic devices of low weight, mechanical flexibility and low cost. One suitable material for organic film fabrigation which is the subject of the great interest is pentacene, because it is characterized by the large carrier mobility (∼1 cm²/Vs). In this work, the growth of pentacene layers using pulse laser deposition (PLD) on different substrates (glass/ITO, Si) is described and various processing parameters are investigated. Two pulsed YAG:Nd³⁺ laser wavelengths were used for the ablation of the PLD target: the first harmonic at 1064 nm aGn:dNdth3+e second at 532 nm. The structure of the layers formed was examined using SEM and RHEED methods. The results were compared with results of optical spectroscopy studies. It will be shown that layers deposed using second harmonics have a higher quality than those for first harmonic. The other PLD parametersalso have a strong influence on the structure quality of layers.      

Electrophysical properties and energetical spectrum of heteroepitaxial germanium films

An epitaxial growth of Ge films from molecular beam is characterized by thermodynamical nonequilibrium. This leads to formation of numerous structural defects connected with local levels in the band gap (mainly acceptor-type). Depending on the deposition temperature the density of such levels may change in wide range (10¹⁶–10¹⁸ cm^?3). This determines various mechanisms of impurity conduction. The tails of the density of states in the band gap are also connected with the defect structure of the films. Stresses in heteroepitaxial Ge films result in the splitting of the valence band atk = 0 and in a change of the band gap. Thus, these stresses have influence on the electrical and optical properties of the films.     

Structure of the free exciton luminescence band of heteroepitaxial ZnSe/GaAs layers

The exciton reflectance and photoluminescence spectra of epitaxial ZnSe/GaAs layers with a thickness of 2–4 μm are investigated in the temperature range 10–120 K. It is shown that one of the causes of the formation of the doublet structure of the A _n=1 photoluminescence band is interference of the exciton radiation at the boundaries of the near-surface dead layer. Fiz. Tverd. Tela (St. Petersburg) 40, 881–883 (May 1998)     

Structural and photoluminescence properties of silicon nanocrystals embedded in SiC matrix prepared by magnetron sputtering

Si nanocrystals (NCs) embedded in an SiC matrix were prepared by the deposition of Si-rich Si_1?xC_x/SiC nanomultilayer films using magnetron sputtering, subsequently followed by thermal annealing in the range of 800～1200 °C. As the annealing temperature increases to 1000 °C, Si NCs begin to form and SiC NCs also start to emerge at the annealing temperature of 1200 °C. With the increase of annealing temperature, two photoluminescence (PL) peaks have an obvious redshift. The intensity of the low-energy PL peak around 669～742 nm gradually lowers, however the intensity of high-energy PL peak around 601～632 nm enhances. The low-energy PL peak might attribute to dangling bonds in amorphous Si (a-Si) sublayers, and the redshift of this peak might be related to the passivation of Si dangling bonds. Whereas the origin of the high-energy PL peak may be the emergence of Si NCs, the redshift of this peak correlates with the change in the size of Si NCs.     

Effect of VI/II ratio upon photoluminescence properties of aluminum-doped ZnTe layers grown by MOVPE

The photoluminescence properties of aluminum (Al)-doped ZnTe layers grown by atmospheric pressure metalorganic vapor phase epitaxy have been investigated as a function of the ratio of transport rate of diethyltelluride and dimethyl (VI/II ratio). When VI/II ratio is increased, the excitonic emission and donor–acceptor pair emission due to Al donor become predominantly in the spectrum of ZnTe layer. This suggests that Al is effectively incorporated into ZnTe. Several bound excitonic emissions associated with residual acceptor impurities are also detected in the spectrum together with free excitonic emission. When VI/II ratio exceeds 3, the deep level emission associated with the complex of Al donor and Zn vacancy which roles the acceptor for ZnTe are induced. It seems that the intensity of this emission band is independent of dopant transport rate.     

Microprobe photoluminescence measurement on heteroepitaxial GaAs on Si grown by metalorganic chemical vapor deposition

Microprobe photoluminescence (PL) measurements at 77 K were used to study the effect of the GaAs layer thickness on optical quality and variations in strain in GaAs/Si containing microcracks. PL peak intensities increase with the increase in thickness of GaAs layers and the peak intensity for the 5.5 m GaAs layer was a factor of 20 higher than those for the 1–2 m GaAs layers. Spatial nonuniformities in strain in the vicinity of two microcracks reveal that stress was almost released at the intersection of two microcracks and is maximum half way between two microcracks.On leave from Semiconductor Materials Lab., Korea Institute of Science and Technology (KIST)     

Structural and photoluminescence properties of Dy3+ doped different modifier oxide-based lithium borate glasses

Structural and photoluminescence properties of Dy³⁺ doped lithium fluoro-borate glasses with the compositions Li₂B₄O₇–BaF₂–NaF–MO (where M=Mg, Ca, Cd and Pb), Li₂B₄O₇–BaF₂–NaF–MgO–CaO and Li₂B₄O₇–BaF₂–NaF–CdO–PbO have been investigated through XRD, FTIR, optical absorption, emission and decay measurements. From the optical absorption spectra, Judd–Ofelt intensity parameters (Ω_λ, λ=2, 4 and 6) have been evaluated and are in turn used to predict radiative properties such as radiative transition probabilities (A_T), branching ratios (β_r) and stimulated emission cross sections (σ_p) for all emission levels of Dy³⁺ ion in different lithium fluoro-borate glass matrices. From the emission spectra, chromaticity color coordinates have been calculated and indicated emission color for all glass matrices. The nature of decay profiles of ⁴F_9/2 state of Dy³⁺ in all the glass matrices are analyzed.     

Structural and magnetic properties of CoCrPt perpendicular media grown on different buffer layers

The influence of buffer layer characteristics on the structural and magnetic properties of CoCrPt perpendicular media has been investigated. Thin (∼10–15 nm) buffer layers consisting of Ta/Ru, Ta/Hf, or amorphous (CoCrPt)Ta₂₅ produced media layers having high perpendicular coercivity of nearly 3 kOe, but the coercivity was only 1.7 kOe when using a Ta/Ti buffer. X-ray diffraction rocking curves showed the highest degree of (0 0 0 2) texture for the Ta/Ru buffer. In-plane diffraction indicated that the Ta/Ru buffer also had the smallest lattice mismatch (5.6%) with the CoCrPt. Cross-sectional transmission electron microscopy showed that the Ta/Ru buffer promoted local epitaxy with the media layer. Amorphous transition regions were observed at the interfaces between the media and the Ta/Hf and Ta/Ti buffer layers. Some small CoCrPt grains were observed at the interface with the amorphous CoCrPtTa buffer.