CdSe/CdS/ZnS量子点光纤的增益研究

采用油相法合成了CdSe/CdS/ZnS量子点,相对于CdSe量子点,其吸收光谱、发射光谱均发生了红移。利用COMSOL Multiphysics软件模拟CdSe/CdS/ZnS量子点光纤和甲苯光纤的电场分布,结果表明CdSe/CdS/ZnS量子点光纤的电场强度高于甲苯光纤。采用中心波长为532 nm的稳态半导体激光器作为光源,对甲苯光纤、CdSe/ZnS量子点光纤、CdSe/CdS/ZnS量子点光纤进行电压信号测试,发现CdSe/ZnS量子点光纤和CdSe/CdS/ZnS量子点光纤的电压信号值相对于甲苯光纤电压信号值分别增强了6.28 mV和18.43 mV,表明双壳型量子点光纤的增益高于单壳型量子点。     

生物大分子杂化处理的CdSe/ZnS核/壳量子点多层膜的超快三阶非线性研究

利用静电自组装技术，以生物大分子材料壳聚糖杂化处理具有稳定结构的CdSe/ZnS核/壳量子点，形成复合多层薄膜. 与薄膜的吸收谱线比较，在375nm飞秒激光激发下测量的量子点的光致发光谱存在Stokes位移. 采用Z扫描技术，利用790nm飞秒激光研究了其三阶非线性吸收和折射特性，发现饱和吸收信号来自CdSe/ZnS量子点，而自聚焦的折射信号则部分来自壳聚糖. 测出多层膜的三阶非线性系数分别是β＝6.5×10^-6cm/W，n₂＝1.5×10^-10cm²/W. 关键词： CdSe/ZnS量子点 非线性性能 光致发光谱     

CdSe量子点滤光片尺寸、温度依赖的光学特性

为了缩小光谱仪体积使之适用于军事卫星等领域,本文将胶体量子点作为滤光材料,研究了CdSe胶体量子点滤光片的光学特性.本文采用热注入法合成出了高质量的CdSe胶体量子点,经过对苯二胺消光处理制备成CdSe胶体量子点滤光片.利用透射电子显微镜(TEM)进行样品形貌结构的表征及粒径尺寸的测量,并分别在不同温度下进行了紫外.可...     

壳层相关的CdSe核/壳量子点发光的热稳定性

测量了CdSe/ZnS(3 ML)核/壳结构及CdSe/CdS(3 ML)/ZnCdS(1 ML)/ZnS(2 ML)核/多壳层结构量子点在80~460 K范围内的光致发光光谱,研究了壳层结构对CdSe量子点发光热稳定性的影响。详细地分析了CdSe量子点的发光峰位能量、线宽和积分强度与温度之间的关系,发现CdSe量子点的发光热稳定性依赖于壳层结构。CdS/ZnCdS/ZnS多壳层结构包覆CdSe量子点在低温和高温部分的热激活能均大于ZnS壳层包覆的CdSe量子点,具有更好的发光热稳定性。此外,在300-460-300 K加热-冷却循环实验中,CdS/ZnCdS/ZnS多壳层结构包覆CdSe量子点的发光强度永久性损失更少,热抵御能力更强。     

加偏置电场的抛物量子阱中的电光效应

本文利用密度矩阵方法得到了加偏置电场的抛物量子阱中电光效应的解析表达式,并以典型的GaAs抛物量子阱为例进行了数值计算研究结果表明,电光效应随偏置电场和抛物势频率的增大而增强,同时也表明GaAs量子阱中的电光效应比体GaAs中的要强一个数量级以上。     

利用N型半导体纳米材料抑制单量子点的荧光闪烁特性

利用N型半导体纳米材料氧化铟锡(ITO)作为单CdSe/ZnS量子点的基质来抑制单量子点的荧光闪烁特性. 实验采用激光扫描共聚焦显微成像系统测量了单量子点荧光的亮、暗态持续时间的概率密度分布的指数截止的幂律特性, 并与直接吸附在SiO₂玻片上的单CdSe/ZnS量子点的荧光特性进行比较. 研究发现处于ITO中的单量子点比SiO₂玻片上的单量子点荧光亮态持续时间提高两个数量级, 掺杂于ITO中的单量子点的荧光寿命约减小为SiO₂玻片上的单量子点的荧光寿命的41%, 并且寿命分布宽度变小50%.     

基于量子点荧光粉白光LED的发光特性和稳定性研究

基于量子点荧光粉白光发光二极管（WLED）是由蓝色GaN芯片和发红光及绿光的CdSe／CdS／ZnS量子点（QDs）组成。因为CdSe量子点的发射波长可在510~620nm之间调节,导致了其色坐标和色差的可变。采用的CdSe量子点是在制备无机前驱体和非配位溶剂的基础上通过合成方法得到的。实验证实温暖和寒冷白光辐射是由于色温在40009000K区间变化;不同的偏置电压导致了颜色坐标的变化,增加工作时间在90min内对白光发射的稳定性进行分析得到稳定光谱。     

温度对CdSe/ZnS量子点吸收光谱和光致发光谱的影响

测量了分散于正己烷溶液和甲苯溶液中的CdSe/ZnS量子点在室温到近溶液沸点温度间的吸收与光致发光光谱,比较了两种不同的CdSe/ZnS量子点的光谱特性,讨论了温度对吸收和光致发光光谱峰值波长以及相对强度的影响。结果表明:在25~100℃范围内,CdSe/ZnS量子点激子吸收峰波长有微小红移,最大约为4nm;光致发光光谱峰值波长略有红移,但最大不超过6nm。根据光致发光光谱测量的结果,确定了Varshni定律中关于CdSe/ZnS量子点禁带宽度的两个经验参数:α=(2.0±0.2)×10^-4eV/K和β=(200±30)K。温度对CdSe/ZnS量子点吸收强度影响不大,荧光发射强度与温度呈线性关系增强。     

空穴传输材料对CdSe核壳量子点的荧光影响

用稳态光谱和时间分辨光谱技术研究了空穴传输材料对CdSe/ZnSe 与CdSe/ZnS核壳量子点的荧光影响。结果表明,空穴传输材料对量子点有较强的猝灭作用,随空穴传输材料分子浓度的增加,量子点的荧光强度明显地被猝灭,同时量子点的荧光寿命也被减短。两种不同空穴传输分子对CdSe/ZnSe量子点的荧光猝灭明显不同。在与相同空穴传输分子相互作用时,包覆ZnS壳层的CdSe核壳量子点荧光猝灭效率明显低于包覆ZnSe壳层的CdSe核壳量子点。量子点的荧光猝灭过程可以解释为静态猝灭和动态猝灭过程,其中静态猝灭来源于量子点表面与空穴传输材料间相互作用,而动态猝灭则主要来源于量子点到空穴传输材料的空穴转移过程。实验结果表明空穴传输材料的种类以及核壳量子点的壳层结构都对其荧光猝灭效应起关键作用。     

异丙醇对油溶性CdSe团簇量子点荧光的影响

为了探究异丙醇对胶体CdSe团簇量子点荧光光谱的影响,使用胶体化学法在油酸-石蜡体系下合成CdSe团簇量子点,对团簇量子点和异丙醇采用不同的混合比例,得到了其修饰之后的荧光发光谱(PL)和紫外吸收(UV)光谱,并采用曲线拟合的方法对团簇量子点的光学性能进行了研究。通过对AFM和傅里叶红外光谱的分析,探讨了CdSe团簇量子点光学性能改变的内在联系。结果表明:随着异丙醇浓度的增加,量子点的荧光峰出现11 nm的蓝移,且蓝移曲线呈阶梯状变化;相对荧光强度也呈现出先上升再下降的波动性变化,且波动幅度最大能达到1 000 a.u.;量子点的第一吸收峰和第二吸收峰都会发生不同程度的红移,且最大红移达到12 nm。     

Resonant photocurrent-spectroscopy of individual CdSe quantum dots

Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm.     

Influence of phonons on the electronic energy spectrum of small semiconductor quantum dots in a dielectric matrix

A diagrammatic technique developed for Green’s functions with inclusion of multiphonon processes is used to investigate the electronic energy levels and the phonon replicas corresponding to them in a semiconductor quantum dot (QD) embedded in a dielectric matrix. It is shown, with reference to GaAs, CdSe, and CuCl quantum dots embedded in glass, that in the case of QD potential wells of a finite depth the shifts of the electronic energy levels decrease with decreasing QD size, irrespective of the strength of electron-phonon coupling in the nanoheterostructure. Theoretically calculated positions of the phonon replicas for CdSe in glass agree with the experimental data on Raman scattering.     

Dual field nonlinear dielectric spectroscopy in a glass forming EPON 828 epoxy resin

Results of the dual field nonlinear dielectric spectroscopy (NDS) studies in supercooled glass forming epoxy resin EPON 828 are presented. For the NDS, changes of dielectric permittivity induced by DC (rectangular) or AC (sine-wave) pulses of a strong electric field were probed by a weak radio frequency electric field. A clear stretched exponential (x < 1) decay after switching off the DC pulse and a single exponential decay (x = 1) after switching off the AC pulse were found. The same results are presented for preliminary studies in superpressed low molecular glass former di-isobutyl phthalate. This observation may be considered as an argument for the heterogeneous picture of supercooled glass forming materials. The temperature dependences of the stationary responses related to DC and AC strong electric field excitations are also shown. The sensitivity of the applied set up made it possible to detect NDS outputs even for electric fields E(strong) < 10 kV cm(-1), qualitatively weaker than in similar 'nonlinear, dielectric' experimental studies on glass forming materials carried out so far.     

Spectroscopy of polarized luminescence of nanostructures

The effect of different distortions arising in nanostructures and of external fields on polarization of radiation has been studied. Occurrence of linear polarization of photoluminescence in a magnetic field applied in the plane of a structure containing a CdTe/CdMnTe quantum well has been considered. The influence of a magnetic field on the effects of optical orientation and optical alignment of excitons and trions in self-assembled CdSe/ZnSe quantum dots has been investigated. Analysis of the experimental data reveals low symmetry of the structures studied. It is shown that the distribution of the anisotropy axes in the plane of nanostructures is nearly random.     

Control of spin state in CdSe quantum dots by coupling with magnetic semiconductor quantum dots

We studied spin states of CdSe quantum dots (QDs) coupled with CdMnSe QDs by probing circular polarization of photoluminescence spectrum under external magnetic fields. The bandgap energies of CdSe and CdMnSe QDs are close to each other and photoluminescence mainly originates from CdSe QDs due to relatively low radiation efficiency of CdMnSe QDs. The photoluminescence lifetime as well as its intensity was decreased with increasing magnetic field, which was ascribed to the increase in the ground state wavefunctions in CdMnSe QDs. The decrease was more pronounced for spin down electrons, which was explained by the difference in spin up and down wave functions under magnetic fields. Our results show that the spin state of CdSe QDs can be manipulated by coupling with CdMnSe QDs.     

Dynamical control of electron states in double quantum dot

Controllable electron dynamics in a double quantum dot has been investigated theoretically in the presence of strong sinusoidal electric field and monotonically varied bias voltage, applied to the structure. It is shown that the possibility to create controllable electron states strongly depends on the relation between Rabi frequency and typical reciprocal time of bias change. As follows from theoretical analysis, when time of bias change is the biggest temporal parameter of the problem, electron density can be fully relocated from one quantum dot to another under the action of both resonant sinusoidal field and slowly varied voltage. When the period of Rabi oscillations is much greater than the time of bias change, electron tunneling between two neighboring quantum dots becomes suppressed. In this case electron density stays in the quantum dot that was initially occupied.     

Electronic structures of stacked layers quantum dots: influence of the non-perfect alignment and the applied electric field

Electronic structures of the artificial molecule comprising two truncated pyramidal quantum dots vertically coupled and embedded in the matrix are theoretically analysed via the finite element method.When the quantum dots are completely aligned,the electron energy levels decrease with the horizontally applied electric field.However,energy levels may have the maxima at non-zero electric field if the dots are staggered by a distance of several nanometers in the same direction of the electric field.In addition to shifting the energy levels,the electric field can also manipulate the electron wavefunctions confined in the quantum dots,in company with the non-perfect alignment.     

微腔中CdSe量子点荧光增强效应

文章主要研究了CdSe量子点微腔结构,微腔结构包括上下分布式布拉格反射镜(DBR),中间的有源层为溶解在聚甲基丙烯酸甲酯(PMMA)中的CdSe胶体量子点.采用传递矩阵法模拟微腔的反射光谱,对实验测试曲线进行较好的拟合.通过测试微腔结构的光致荧光(PL)光谱,其半峰宽(FWHM)由未加入微腔的CdSe量子点样品的27.9 nm,减小到微腔结构的7.5 nm,在微腔中的量子点,由于腔模式的出现,其发光谱的品质因数增加了3.6倍,达到了荧光增强的效果. 关键词： CdSe量子点 微腔效应 荧光增强     

Enhancement of photoluminescence of the CdSe/CdS quantum dots on quartz substrates in the presence of silver nanoparticles

Multilayer systems consisting of layers of hybrid quantum dots are fabricated. The quantum dots with the CdSe/CdS core/shell structure are chemically synthesized and deposited on the surface of quartz glass that contains ion-synthesized silver nanoparticles in the near-surface region. Silver nanoparticles exhibit optical absorption owing to the localized surface plasmon resonance. Variations in the photoluminescence intensity of the layer related to an increase in the distance from the quartz surface with metal nanoparticles are studied. An increase in the photoluminescence intensity is observed under excitation in the spectral region of the plasmon absorption of silver nanoparticles. An optimal distance between the layers is determined to maximize the enhancement of the photoluminescence of quantum dots in the presence of the near field of metal nanoparticles.