Mechanism of carrier generation and the origin of the pseudogap and 60 K phases in YBCO

The mechanism of hole carrier generation is considered in the framework of a model assuming the formation of negative U centers (NUCs) in HTSC materials under doping. The calculated dependences of carrier concentration on the doping level and temperature are in quantitative agreement with experiment. An explanation is proposed for the pseudogap and 60 K phases in YBa₂Cu₃O_6+δ. It is assumed that a pseudogap is of superconducting origin and arises at temperature T* > T_c∞ > T_c in small nonpercolating clusters as a result of strong fluctuations in the occupancy of NUCs (T_c∞ and T_c are the superconducting transition temperatures of an infinitely large and finite NUC clusters, respectively). The T*(δ) and T_c(δ) dependences calculated for YBa₂Cu₃O_6+δ correlate with experimental dependences. In accordance with the model, the region between T*(δ) and T_c(δ) is the range of fluctuations in which finite nonpercolation clusters fluctuate between the superconducting and normal states due to NUC occupancy fluctuations.     

Topology of the Fermi surface and the coexistence of orbital antiferromagnetism and superconductivity in cuprates

It has been shown that the strong coupling model taking into account a rise in the spin antiferromagnetic insulating state explains the doping dependence of the topology and shape of the Fermi contour of superconducting cuprates. Hole pockets with shadow bands in the second Brillouin zone form the Fermi contour with perfect ordinary and mirror nesting, which ensures the coexistence of orbital antiferromagnetism and superconductivity with a large pair momentum for T < T_C. The weak pseudogap region (T_* < T < T*) corresponds to the orbital antiferromagnetic ordering, which coexists with the incoherent state of superconducting pairs with large momenta in the strong pseudogap region (T_C < T < T_*).     

Surface tension of pure liquid helium isotopes

The effects caused by vapor inhomogeneity over liquid helium are considered. Both pure isotopes have surface levels, whose population increases with temperature T. We separated their contribution to the temperature dependence of surface tension σ₃(T) and σ₄(T) and compared our theoretical results with the results of Japanese experimental works [1–3]. For liquid He³, one has σ₃(T)=σ₃(0)?σ ₃ ^∞ T² at 0.2 K<T<1 K and σ₃(T)=σ₃(0)?α ₃ ⁰ T²exp(?Δ₃/T) at T<0.2 K, with Δ₃≈0.25 K. For liquid He⁴, σ₄(T)=σ₄(0)?AT^7/3? α ₄ ⁰ T²exp(?Δ₄/T) at T<2 K, where A is the Atkins constant and Δ₄≈4 K. The parameters α ₃ ⁰ , α ₃ ^∞ , and α ₄ ⁰ depend on the fluid properties.     

Specific Heat of the Spin-1/2 Dimerized Antiferromagnetic Chains at Low Temperatures

A spin linear chain with antiferromagnetic nearest-neighbor interaction is considered. The coupling constants of each spin with the right and left neighbors are different. Within the Bulaevskii model, the magnetic specific heat is calculated as a function of temperature for different alternation parameters. It is shown that the temperature dependence of the specific heat has two regimes. In the first one, the temperature is lower than half the band gap; in this case, in the low-temperature limit, C ∝ T^-1 exp(?Δ/k_BT). In the second regime, the temperature exceeds half the band gap; in this case, we approximately have C ∝ T.     

A new critical point in the non-linear conductivity due to variable range hopping in Si

A critical point in the non-linear conductivity has been observed in epitaxial silicon in the variable range hopping regime, due to a negative differential resistance with a dc bias currentI _dc. This gives thermal breakdown via the electron-phonon coupling and circuit-limited oscillations with a frequencyf∝I _dc, below a critical temperatureT _c. This critical behaviour is intrinsic, and forR(T)=R ₀ exp(T ₀ /T)^1/2 we show thatT _c=0.00512T ₀.     

Enhancement of pseudogap anomalies induced by nanoscale structural inhomogeneity in YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>6.93</Subscript> high-<Emphasis Type="Italic">T</Emphasis><Subscript>c</Subscript> superconductor

The magnetization M(H) in the superconducting state, dc magnetic susceptibility χ(T) in the normal state, and specific heat C(T) near the superconducting transition temperature T _c have been measured for a series of fine-crystalline YBa₂Cu₃O _y samples having nearly optimum values of y = 6.93 ± 0.3 and T _c = (91.5 ± 0.5) K. The samples differ only in the degree of nanoscale structural inhomogeneity. The characteristic parameters of superconductors (the London penetration depth and the Ginzburg–Landau parameter) and the thermodynamic critical field H _c are determined by the analysis of the magnetization curves M(H). It is found that the increase in the degree of nanoscale structural inhomogeneity leads to an increase in the characteristic parameters of superconductors and a decrease in H _c(T) and the jump of the specific heat ΔC/T _c. It is shown that the changes in the physical characteristics are caused by the suppression of the density of states near the Fermi level. The pseudogap is estimated by analyzing χ(T). It is found that the nanoscale structural inhomogeneity significantly enhances and probably even creates the pseudogap regime in the optimally doped high-T _c superconductors.     

A model of evaluating the pseudogap temperature for high-temperature superconductors

We have presented a model of evaluating the pseudogap temperature for high-temperature superconductors using paraconductivity approach. The theoretical analysis is based on the crossing point technique of the conductivity expressions. The pseudogap temperature T^? is found to depend on dimension and is calculated for 2D and 3D superconducting samples. Numerical calculation is given in favour of the YBCO and doped SmFeAsO_1?x samples.     

Interplay of Curie-type and Pauli-type magnetic susceptibilities in HCl-doped polyaniline pellets

The static magnetic susceptibility (χ) of own-made HCl-doped polyaniline pellets is investigated experimentally over the full range of the protonation level Y and in the temperature (T) range 10–300 K.The obtained results suggest that χ and the electrical conductivity σ – which is known from previous work – are interrelated.Namely, there is a weakly Y dependent crossover temperature T ^* where both χ and σ undergo notable changes.In χ, this refers to a simultaneous enhancement (reduction) of the Pauli-type susceptibility χ _P and reduction (enhancement) of the Curie constant C at T = T ^* when T increases (decreases).Below T < T ^*, where thermal effects are weak to moderate, a steep increase of χ _P(Y) around Y = 0.3 occurs together with a drop of C(Y).The above findings are consistent with a picture in which, at T ^*, spins that disappear from C reappear in χ _P, and vice versa.This model is used to address the longitudinal and transversal electron localisation lengths as functions of Y, the former being estimated to take values in the range 7–8 Åand the latter in the range 1–2 Å.     

Variable-range hopping conduction in LaMnO<Subscript>3 + δ</Subscript>

The temperature dependence of the electrical resistivity ρ(T) for ceramic samples of LaMnO_{3 + δ} (δ = 0.100–0.154) are studied in the temperature range T = 15–350 K, in magnetic fields of 0–10 T, and under hydrostatic pressures P of up to 11 kbar. It is shown that, above the ferromagnet-paramagnet transition temperature of LaMnO_{3 + δ}, the dependence ρ(T) of this compound obeys the Shklovskii-Efros variable-range hopping conduction: ρ(T) = ρ₀(T)exp[(T ₀/T)^1/2], where ρ₀(T) = AT ^9/2 (A is a constant). The density of localized states g(?) near the Fermi level is found to have a Coulomb gap Δ and a rigid gap γ(T). The Coulomb gap Δ assumes values of 0.43, 0.46, and 0.48 eV, and the rigid gap satisfies the relationship γ(T) ≈ γ(T _v)(T/T _v)^1/2, where T _v is the temperature of the onset of variable-range hopping conduction and γ(T _v) = 0.13, 0.16, and 0.17 eV for δ = 0.100, 0.125, and 0.154, respectively. The carrier localization lengths a = 1.7, 1.4, and 1.2 Å are determined for the same values of δ. The effect of hydrostatic pressure on the variable-range hopping conduction in LaMnO_{3 + δ} with δ = 0.154 is analyzed, and the dependences Δ(P) and γ_v(P) are obtained.     

Low-temperature thermal conductivity of tellurium-doped bismuth

Phonon thermal conductivities κ₂₂ (?T ‖ C1) and κ₃₃ (? T ‖ C₃) of tellurium-doped bismuth with an electron concentration in the range 1.8 × 10¹⁹ ≤ n_L ≤ 1.4 × 10²⁰ cm^?3 were studied in the temperature interval 2 < T < 300 K. The temperature dependence of the phonon thermal conductivity obtained on doped bismuth samples of both orientations exhibits two maxima, one at a low temperature and the other at a high temperature. The effect of various phonon relaxation mechanisms on the dependence of both phonon thermal conductivity maxima on temperature, impurity concentration, and electron density is studied.     

Possible superconductivity mechanism in high-temperature superconductors

The formation temperature (T*~ 135 K) is determined in the Shubin-Vonsovski approximation for local electron pairs in the CuO₂ planes of YBa₂Cu₃O₇ crystal. This estimate is used to obtain the Coulomb pseudopotential µ*≈?0.15. In the presence of strong electron-phonon coupling (λ ~0.5) and electron correlation in the electron pairing, the estimate of critical temperature T _c ≈99 K agrees, by the order of magnitude, with its experimental value. The calculated ratio 2Δ/kT _c ≈4.13 confirms the presence of strong electron pairing.     

Possible nature of the pseudogap anomalies in HTSC

An HTSC model, in which the interaction of valence-band electrons with diatomic negative U centers is assumed to be responsible for the anomalous properties of HTSC compounds, is proposed and used to explain the nature of the pseudogap and pseudogap anomalies (including the giant Nernst effect, the anomalous diamagnetism above T _c, the “transfer” of the optical spectral weight). For YBa₂Cu₃O_{6 + δ}, the pseudogap opening temperature T* and T _c are calculated as functions of the degree of doping δ. The calculated dependences agree quantitatively with the experimental dependences without using scale fitting parameters. The good agreement between the calculated and experimental results can serve as an argument for the proposed HTSC model.     

Specific features of dielectric anomalies in Pb<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te(Ga) near a ferroelectric phase transition

The dielectric properties of Pb_{1 ? x} Ge _x Te(Ga) (x = 0.02, 0.03, 0.05) were studied in the temperature range 77–150 K at frequencies of 10⁴–10⁶ Hz. It is revealed that the ferroelectric phase transition temperature T _c and the permittivity ? of Pb_{1 ? x} Ge _x Te(Ga) increase substantially with the Ge content. The temperature dependence of the permittivity of Pb_{1 ? x} Ge _x Te shows two peaks; the main peak is at the ferroelectric phase transition temperature T _c , and an additional peak is at T ₁ > T _c .     

Low-temperature contribution to the resonant tunneling conductance of a disordered N–I–N junction

A formula for the contribution ΔG ^res(T) to the resonant tunneling conductance of the N–I–N junction (where N is a normal metal and I is an insulator) with a weak (low impurity concentrations) structural disorder in the I layer from the low-temperature “smearing” electron Fermi surfaces in its N shores is obtained. It is shown that the temperature dependence ΔG ^res(T) in such a “dirty” junction qualitatively differs from the corresponding dependence ΔG ₀(T) in a “pure” (without resonant impurities in the I layer) junction: ΔG ^res(T) < 0, d(ΔG ^res)/dT < 0; ΔG ₀(T) > 0, d(ΔG ₀)/dT > 0, which can serve as an experimental test of the presence of impurity tunneling resonances in the disordered I layer.     

Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

Low-temperature anomalies in the specific heat and thermal conductivity of MgB<Subscript>2</Subscript>

The temperature dependences of the specific heat C(T) and thermal conductivity K(T) of MgB₂ were measured at low temperatures and in the neighborhood of T _c . In addition to the well-known superconducting transition at T _c ≈40 K, this compound was found to exhibit anomalous behavior of both the specific heat and thermal conductivity at lower temperatures, T≈10–12 K. Note that the anomalous behavior of C(T) and K(T) is observed in the same temperature region where MgB₂ was found to undergo negative thermal expansion. All the observed low-temperature anomalies are assigned to the existence in MgB₂ of a second group of carriers and its transition to the superconducting state at T_c2≈10?12 K.     

Manifestation of pseudogap features in structurally inhomogeneous optimally doped HTSC YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>6.92</Subscript>

Magnetization M(H,T) in magnetic fields H up to 90 kOe and at temperatures 2 K ≤ T < T _c (where Tc is the superconducting transition temperature), along with magnetic susceptibility χ(T) in the normal state T _c < T < 400 K for optimally oxygen-doped samples of YBa₂Cu₃O_6.92 with varying degrees of defects in the crystal structure, are studied to determine the influence of structural inhomogeneity on the electron systems characteristics of cuprate superconductors. It is shown that the existence of structural inhomogeneity of samples leads to the manifestation of peculiarities appropriate to pseudogap regime in their properties.     

Novel features of the fragment mass variance in fission of hot nuclei

On the basis of data obtained by the incomplete fusion reactions ⁷Li(43A MeV)+²³²Th and ¹⁴N(34A MeV)+¹⁹⁷Au, the energy dependence of the variance (σ _M ² ) of the fragment mass in fission of highly heated nuclei has been investigated for total excitation energies E _tot ^* ranging from 50 up to 350 MeV. The dependence σ _M ² E _tot ^* shows some unexpected features when E _tot ^* exceeds a value of about 70 MeV. After this value, the steady increase of σ _M ² expected from its temperature dependence changes to some kind of plateau between 100 and 200 MeV. Further on, at E _tot ^* in excess of about 250 MeV, the variance is found to increase again sharply. In order to analyze this behavior quantitatively, a dynamical stochastic model has been developed. The model employs the one-body dissipation mechanism and describes the decay of highly excited and rotating nuclei by fission and light-particle evaporation. It satisfactorily explains the measured prior-to-scission neutron multiplicities and the experimental mass variances up to E _tot ^* ?250 MeV, but the stochastic treatment does not reveal any increase in σ _M ² at higher excitation energies in contradiction with the data.     

Temperature Dependence of the Upper Critical Field in Disordered Hubbard Model with Attraction

We study disorder effects upon the temperature behavior of the upper critical magnetic field in an attractive Hubbard model within the generalized DMFT+Σ approach. We consider the wide range of attraction potentials U—from the weak coupling limit, where superconductivity is described by BCS model, up to the strong coupling limit, where superconducting transition is related to Bose–Einstein condensation (BEC) of compact Cooper pairs, formed at temperatures significantly higher than superconducting transition temperature, as well as the wide range of disorder—from weak to strong, when the system is in the vicinity of Anderson transition. The growth of coupling strength leads to the rapid growth of H_c2(T), especially at low temperatures. In BEC limit and in the region of BCS–BEC crossover H_c2(T), dependence becomes practically linear. Disordering also leads to the general growth of H_c2(T). In BCS limit of weak coupling increasing disorder lead both to the growth of the slope of the upper critical field in the vicinity of the transition point and to the increase of H_c2(T) in the low temperature region. In the limit of strong disorder in the vicinity of the Anderson transition localization corrections lead to the additional growth of H_c2(T) at low temperatures, so that the H_c2(T) dependence becomes concave. In BCS–BEC crossover region and in BEC limit disorder only slightly influences the slope of the upper critical field close to T _c . However, in the low temperature region H_c2 (T may significantly grow with disorder in the vicinity of the Anderson transition, where localization corrections notably increase H_c2 (T = 0) also making H_c2(T) dependence concave.     

Thermal conductivity of partially graphitized biocarbon obtained by carbonization of medium-density fiberboard in the presence of a Ni-based catalyst

The thermal conductivity k and resistivity ρ of biocarbon matrices, prepared by carbonizing medium-density fiberboard at T _carb = 850 and 1500°C in the presence of a Ni-based catalyst (samples MDF-C( Ni)) and without a catalyst (samples MDF-C), have been measured for the first time in the temperature range of 5–300 K. X-ray diffraction analysis has revealed that the bulk graphite phase arises only at T _carb = 1500°C. It has been shown that the temperature dependences of the thermal conductivity of samples MDFC- 850 and MDF-C-850(Ni) in the range of 80–300 K are to each other and follow the law of k(T) ～ T ^1.65, but the use of the Ni-catalyst leads to an increase in the thermal conductivity by a factor of approximately 1.5, due to the formation of a greater fraction of the nanocrystalline phase in the presence of the Ni-catalyst at T _carb = 850°C. In biocarbon MDF-C-1500 prepared without a catalyst, the dependence is k(T) ～ T ^1.65, and it is controlled by the nanocrystalline phase. In MDF-C-1500(Ni), the bulk graphite phase formed increases the thermal conductivity by a factor of 1.5–2 compared to the thermal conductivity of MDF-C-1500 in the entire temperature range of 5–300 K; k(T = 300 K) reaches the values of ～10 W m^–1 K^–1, characteristic of biocarbon obtained without a catalyst only at high temperatures of T _carb = 2400°C. It has been shown that MDF-C-1500(Ni) in the temperature range of 40?300 K is characterized by the dependence, k(T) ～ T ^1.3, which can be described in terms of the model of partially graphitized biocarbon as a composite of an amorphous matrix with spherical inclusions of the graphite phase.