Temperature and layer number dependence of the G and 2D phonon energy and damping in graphene

We have studied the temperature and size dependence of the G and 2D phonon modes in graphene. It is shown that in a graphene monolayer the phonon energy decreases whereas the phonon damping increases with increasing temperature. The electron-phonon interaction leads to hardening whereas the fourth-order anharmonic phonon-phonon processes lead to softening of the phonon energy with increasing temperature. We have shown that the electron-phonon interaction plays an important role also by the dispersion dependence of the phonon G mode, by the observation of the Kohn anomaly. The G mode frequency decreases and damping increases, whereas the 2D phonon frequency and damping increase with increasing layer number. The temperature and size effects of the 2D mode are much stronger than those of the G mode.     

Phonon softening in individual metallic carbon nanotubes due to the Kohn Anomaly

We have studied the line shape and frequency of the G band Raman modes in individual metallic single walled carbon nanotubes (M-SWNTs) as a function of Fermi level (epsilonF) position, by tuning a polymer electrolyte gate. Our study focuses on the data from M-SWNTs where explicit assignment of the G- and G+ peaks can be made. The frequency and line shape of the G- peak in the Raman spectrum of M-SWNTs is very sensitive to the position of the Fermi level. Within +/- variant Planck's over 2piomega/2 (where variant Planck's over 2piomega is the phonon energy) around the band crossing point, the G- mode is softened and broadened. In contrast, as the Fermi level is tuned away from the band crossing point, a semiconductinglike G band line shape is recovered both in terms of frequency and linewidth. Our results confirm the predicted softening of the A-symmetry LO phonon mode frequency due to a Kohn anomaly in M-SWNTs.     

The influence of impurity formation on electron inelastic scattering of suspended graphene

This study reports on controlling the formation of nanoimpurities on suspended graphene to investigate the inelastic scattering of electrons using a two‐phonon Raman process. Results were analyzed by transmission electron microscopy (TEM) and scanning Raman spectroscopy in the same region of suspended graphene. The findings revealed that the area with a higher concentration of impurities shown in the TEM image corresponds directly to the area with a lower integrated intensity and a wider full width at half maximum in the Raman mapping of the 2D band and vice versa. The same trend is also apparent in the 2D′ and D + D″ bands. In conclusion, the results are explained by an increase in the electronic scattering rate due to impurities, which affects two‐phonon Raman scattering. Combining the TEM image and Raman mapping image effectively demonstrates how electron behavior is affected by the distribution of impurities in graphene systems. Copyright © 2012 John Wiley & Sons, Ltd.     

Multiphonon Raman spectroscopy properties and Raman mapping of 2D van der Waals solids: graphene and beyond

Strong in‐plane bonding (covalent) and weak van der Waals (vdW) interplanar interactions characterize a number of layered solids, as epitomized by graphite. The advent of graphene (Gr), individual atomic two‐dimensional (2D) layers, isolated from mineral graphite via micromechanical exfoliation enabled the ability to pick, place and stack of arbitrary compositions. Moreover, this discovery implicated an access to other 2D vdW solids beyond graphene and artificially stacking atomic layers forming heterostructures/superlattices. Raman spectroscopy (RS) is a fast reliable non‐destructive analytical tool and an integral part for lattice dynamical structural characterization of crystalline solids at nanoscale, revealing not only the collective atomic/molecular motions but also localized vibrations/modes and specifically used to determine the number of graphene layers and of other 2D vdW solids. We present Raman spectroscopy in first‐, second‐ and higher‐order vibrational modes involving 3 and 4 phonons (overtones and combination) and mapping of graphene (mono‐, bi‐, tri‐ and few‐) layers, semiconducting transition metal dichalcogenides (TMDs) [molybdenum disulfide (MoS₂) and tungsten disulfide (WS₂)] and wide bandgap hexagonal boron nitride (h‐BN) dispersed monolayers, revealing various molecular vibrations and structural quality/disorder. First‐ and higher‐order phonon modes are observed and analyzed in terms of Raman intensity (spatial inhomogeneity or thickness variation), band position (intrinsic mechanical strain) and intensity ratio (structural disorder) as a function of graphene layer (n). An empirical relation for G band position with n is corroborated. All of the higher order modes are observed to upshift almost linearly with n, betraying the underlying interlayer vdW interactions. These findings exemplify the evolution of structural parameters in layered materials in changing from 3‐ to 2‐ or low‐dimensional regime. The results are presented in view of applications of graphene by itself and in combination that help better understanding of physical and electronic properties for nano‐/optoelectronics. Copyright © 2015 John Wiley & Sons, Ltd.     

Strained graphene as a local probe for plasmon‐enhanced Raman scattering by gold nanostructures

We investigate with Raman spectroscopy how gold nanostructures of different shape, size and geometry locally modify a graphene cover layer through strain. The resulting phonon softening translates into frequency downshifts of up to 85 cm^–1 for the 2D‐mode of graphene. With spatially resolved and excitation dependent Raman measurements we demonstrate that the downshifted Raman peaks exclusively arise from strained graphene subject to plasmonic enhancement by the nanostructures. The signals arise from an area well below the size of the laser spot. They serve as a local probe for the interaction between graphene and intense light fields. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Reliable determination of the few‐layer graphene oxide thickness using Raman spectroscopy

We report on a reference‐free Raman spectroscopy method for a precise thickness determination of the multilayered graphene oxide flakes. The method is based on the normalization of the total integral intensity of D and G Raman bands to the integral intensity of the second‐order optical phonon peak of the silicon substrate in the Raman spectrum. The normalization provides discrete ratio values corresponding to the number of graphene oxide layers in the respective flakes with the intensity linearly increasing with the number of layers. This provides a fast and robust determination of the thickness of graphene oxide flakes in terms of the layer number up to high values. A comparison with conventional spectrally resolved reflectivity mapping shows similar sensitivity, while selectivity to particular functional chemical groups is a bonus of the Raman‐based method. Copyright © 2015 John Wiley & Sons, Ltd.     

Raman imaging and stress quantification in self‐assembled graphene oxide fiber ‘Latin Letters’

To probe the intrinsic stress distribution in terms of spatial Raman shift (ω) and change in the phonon linewidth (Γ), here we analyze self‐assembled graphene oxide fibers (GOF) ‘Latin letters’ by confocal Raman spectroscopy. The self‐assembly of GOF ‘Latin letters’ has been explained through surface tension, π–π stacking, van der Waals interaction at the air–water interface and by systematic time‐dependent investigation using field emission scanning electron microscopy analysis. Intrinsic residual stress due to structural joints and bending is playing a distinct role affecting the E_2g mode (G band) at and away from the physical interface of GOF segments with broadening of phonon linewidth, indicating prominent phonon softening. Linescan across an interface of the GOF ‘letters’ reveals Raman shift to lower wavenumber in all cases but more so in ‘Z’ fiber exhibiting a broader region. Furthermore, intrinsic stress homogeneity is observed for ‘G’ fiber distributed throughout its curvature with negligible shift corresponding to E_2g mode vibration. This article demonstrates the significance of morphology in stress distribution across the self‐assembled and ‘smart‐integrable’ GOF ‘Latin letters’. Copyright © 2016 John Wiley & Sons, Ltd.     

Thermal transport in S-shaped graphene nano-junctions

By using nonequilibrium Green's function method, we study the phonon transport properties in S-shaped graphene nano-junctions (GNJs). Interesting transmission phenomenon is found. The transmission spectrum of low frequency phonon shows forbidden frequency band, by changing the width W₂ of the S-shaped GNJs. These low frequency forbidden bands are sensitive to their periodic geometric shape of GNJs. These thermal transport phenomena can be explained by analyzing the phonon transmission coefficient. This paper illustrates the thermal transport mechanisms in the different S-shaped GNJs, and the results could provide significant physical models and theoretical validity in designing the thermal devices based on the GNJs.     

Raman Spectroscopic Characterization of Graphene

Abstract

The recent progress using Raman spectroscopy and imaging of graphene is reviewed. The intensity of the G band increases with increased graphene layers, and the shape of 2D band evolves into four peaks of bilayer graphene from a single peak of monolayer graphene. The G band will blue shift and become narrow with both electron and hole doping, whereas the 2D band will blue shift with hole doping and red shift with electron doping. Frequencies of the G and 2D band will downshift with increasing temperature. Under compressed strain, the upshift of the G and 2D bands can be found. Moreover, the strong Raman signal of monolayer graphene is explained by interference enhancement effect. As for epitaxial graphene, Raman spectroscopy can be used to identify the superior and inferior carrier mobility. The edge chirality of graphene can be determined by using polarized Raman spectroscopy. All results mentioned here are closely relevant to the basic theory of graphene and application in nanodevices.     

Layer‐dependent resonant Raman scattering of a few layer MoS2

We report resonant Raman scattering of MoS₂ layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness. Indirect band gap MoS₂ in bulk becomes a direct band gap semiconductor in the monolayer form. New Raman modes are seen in the spectra of single‐ and few‐layer MoS₂ samples which are absent in the bulk. The Raman mode at ~230 cm⁻¹ appears for two, four and seven layers. This mode has been attributed to the longitudinal acoustic phonon branch at the M point (LA(M)) of the Brillouin zone. The mode at ~179 cm⁻¹ shows asymmetric character for a few‐layer sample. The asymmetry is explained by the dispersion of the LA(M) branch along the Γ‐M direction. The most intense spectral region near 455 cm⁻¹ shows a layer‐dependent variation of peak positions and relative intensities. The high energy region between 510 and 645 cm⁻¹ is marked by the appearance of prominent new Raman bands, varying in intensity with layer numbers. Resonant Raman spectroscopy thus serves as a promising non invasive technique to accurately estimate the thickness of MoS₂ layers down to a few atoms thick. Copyright © 2012 John Wiley & Sons, Ltd.     

Nonadiabatic Kohn anomaly in a doped graphene monolayer

We compute, from first principles, the frequency of the E(2g), Gamma phonon (Raman G band) of graphene, as a function of the charge doping. Calculations are done using (i) the adiabatic Born-Oppenheimer approximation and (ii) time-dependent perturbation theory to explore dynamic effects beyond this approximation. The two approaches provide very different results. While the adiabatic phonon frequency weakly depends on the doping, the dynamic one rapidly varies because of a Kohn anomaly. The adiabatic approximation is considered valid in most materials. Here, we show that doped graphene is a spectacular example where this approximation miserably fails.     

Soliton energy band for the six-fold degenerated CDW in the K2Pt(CN)4Br0.3·3.2H2O system

The formation of soliton bands in the quasi-one-dimensional mixed valence planer platinum compound K₂Pt(CN)₄Br_0.3·3.2H₂O (KCP) as a result of overlapping soliton wave functions is considered. A solitonic energy band dependence on temperature and the associated phonon modes of the soliton array are suggested to be responsible for the ESR linewidth broadening observed in this material for temperatures above 85 K.     

Phonon anharmonicities in graphite and graphene

We determine from first principles the finite-temperature properties-linewidths, line shifts, and lifetimes-of the key vibrational modes that dominate inelastic losses in graphitic materials. In graphite, the phonon linewidth of the Raman-active E(2g) mode is found to decrease with temperature; such anomalous behavior is driven entirely by electron-phonon interactions, and does not appear in the nearly degenerate infrared-active E(1u) mode. In graphene, the phonon anharmonic lifetimes and decay channels of the A(1)' mode at K dominate over E(2g) at Gamma and couple strongly with acoustic phonons, highlighting how ballistic transport in carbon-based interconnects requires careful engineering of phonon decays and thermalization.     

基于石墨烯的可调谐太赫兹光子晶体结构

本文将石墨烯引入到常规光子晶体中构建一种新型光子晶体, 首次从理论上严格导出了决定其能带结构的色散关系, 由于色散关系中石墨烯电导率的存在导致了它具有与常规光子晶体有所不同的特殊光学性质, 我们发现, 随着费米能增大, 低频段能带迅速向高频移动, 而高频段能带移动缓慢, 导致了常规光子晶体没有的能带压缩现象的发生, 究其原因在于石墨烯在低频段电导率迅速变化, 而高频段电导率变化缓慢, 导致能带向高频压缩, 使得光波原先允许频率变成禁止传播, 而禁止频率变成允许传播.     

Structure-dependent Fano resonances in the infrared spectra of phonons in few-layer graphene

The in-plane optical phonons around 200?meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric features characteristic of Fano resonances, which depend critically on the layer thickness and stacking order of the sample. The phonon intensities in samples with rhombohedral (ABC) stacking are significantly higher than those with Bernal (AB) stacking. These observations reflect the strong coupling between phonons and interband electronic transitions in these systems and the distinctive variation in the joint density of electronic states in samples of differing thickness and stacking order.     

多空穴错位分布对石墨纳米带中热输运的影响

利用非平衡格林函数方法研究了石墨纳米带中三空穴错位分布对热输运性质的影响.研究结果发现:三空穴竖直并排结构对低频声子的散射较小,导致低温区域三空穴竖直并排时热导最大,而在高频区域,三空穴竖直并排结构对高频声子的散射较大,导致较高温度区域三空穴竖直并排时热导最小;三空穴的相对错位分布仅能较大幅度地调节面内声学模高频声子的透射概率,而三空穴的相对错位分布能较大幅度地调节垂直振动膜高频声子和低频声子的透射概率,导致三空穴的相对错位分布不仅能大幅调节面内声学模和垂直振动模的高温热导,也能大幅调节垂直振动模的低温热导.研究结果阐明了空穴位置不同的石墨纳米带的热导特性,为设计基于石墨纳米带的热输运量子器件提供了有效的理论依据.     

γ radiation caused graphene defects and increased carrier density

We report on a micro-Raman investigation of inducing defects in mono-layer, bi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional (2D) and G band position evolution with the layer number increasing and D and D' bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.     

Tuning of electronic properties and dynamical stability of graphene oxide with different functional groups

The structural, electronic and vibrational properties of graphene oxide (GO) with varying proportion of epoxy and hydroxyl functional groups have been studied using density functional theory. The functional groups and oxygen density have an obvious influence on the electronic and vibrational properties. The dependence of band gap on associated functional groups and oxygen density shows a possibility of tuning the band gap of graphene by varying the functional groups as well as oxidation level. The absorption of high oxygen content in graphene leads to the gap opening and resulting in a transition from semimetal to semiconductor. Phonon dispersion curves show no imaginary frequency or no softening of any phonon mode throughout the Brillouin zone which confirms the dynamical stability of all considered GO models. Different groups and different oxygen density result into the varying characteristics of phonon modes. The computed results show good agreement with the experimental observations. Our results present interesting possibilities for engineering the electronic properties of graphene and GO and impact the fabrication of new electronics.     

Crystal → nematic phase transition in the liquid crystalline system 1‐isothiocyanato‐4‐(trans‐4‐propylcyclohexyl) benzene (3CHBT) probed by temperature‐dependent micro‐Raman study and DFT calculations

Raman spectra of 3CHBT in unoriented form were recorded at 14 different temperature measurements in the range 25–55 °C, which covers the crystal → nematic (N) phase transition, and the Raman signatures of the phase transition were identified. The wavenumber shifts and linewidth changes of Raman marker bands with varying temperature were determined. The assignments of important vibrational modes of 3CHBT were also made using the experimentally observed Raman and infrared spectra, calculated wavenumbers, and potential energy distribution. The DFT calculations using the B3LYP method employing 6‐31G functional were performed for geometry optimization and vibrational spectra of monomer and dimer of 3CHBT. The analysis of the vibrational bands, especially the variation of their peak position as a function of temperature in two different spectral regions, 1150–1275 cm⁻¹ and 1950–2300 cm⁻¹, is discussed in detail. Both the linewidth and peak position of the ( C H ) in‐plane bending and ν(NCS) modes, which give Raman signatures of the crystal → N phase transition, are discussed in detail. The molecular dynamics of this transition has also been discussed. We propose the co‐existence of two types of dimers, one in parallel and the other in antiparallel arrangement, while going to the nematic phase. The structure of the nematic phase in bulk has also been proposed in terms of these dimers. The red shift of the ν(NCS) band and blue shift of almost all other ring modes show increased intermolecular interaction between the aromatic rings and decreased intermolecular interaction between two  NCS groups in the nematic phase. Copyright © 2009 John Wiley & Sons, Ltd.     

Coherent phonon generation and detection in ultrathin SrTiO3 grown directly on silicon

Time‐resolved two color pump‐probe polarization spectroscopy was performed at room temperature on SrTiO₃ films grown directly on Si with film thickness varying from 2 nm to 7.8 nm. An E‐symmetry mode with a characteristic frequency of 0.2 THz is impulsively generated and measured in these coherently strained tetragonal phase SrTiO₃ thin films. A superimposed exponentially decaying signal observed indicates the possible relaxational hopping of Ti ion between double potential wells. The dependence of the coherent phonon signal on pump and probe laser polarization helps to identify the symmetry of the phonon modes.