Signature of Kondo effect in silicon quantum dots

We report observation of the Kondo effect in the Coulomb blockade oscillations of an impurity quantum dot (IQD). This IQD is formed in the channel of a 100 nm gate length Silicon MOSFET. The quantitative analysis of the anomalous temperature and voltage dependence for the drain-source current over a series of Coulomb blockade oscillations is performed. It strongly supports the Kondo explanation for the conductance behavior at very low temperature in this standard microelectronics device. Received 13 November 2001 and Received in final form 18 February 2002     

Dynamically induced Kondo effect in double quantum dots

A new mechanism of resonance Kondo tunneling via a composite quantum dot (QD) is proposed. It is shown that, owing to the hidden dynamic spin symmetry, the Kondo effect can be induced by a finite voltage eV applied to the contacts at an even number N of electrons in a QD with zero spin in the ground state. As an example, a double QD is considered in a parallel geometry with N=2, which possesses the SO(4) type symmetry characteristic of a singlet-triplet pair. In this system, the Kondo peak of conductance appears at an eV value compensating for the exchange splitting.     

Multipeak Kondo effect in one- and two-electron quantum dots

We have fabricated a few-electron quantum dot that can be tuned down to zero electrons while maintaining strong coupling to the leads. Using a nearby quantum point contact as a charge sensor, we can determine the absolute number of electrons in the quantum dot. We find several sharp peaks in the differential conductance, occurring at both zero and finite source-drain bias, for the one- and two-electron quantum dot. We attribute the peaks at finite bias to a Kondo effect through excited states of the quantum dot and investigate the magnetic field dependence of these Kondo resonances.     

Kondo effect in quantum dots coupled to ferromagnetic leads

We study the Kondo effect in a quantum dot coupled to ferromagnetic leads and analyze its properties as a function of the spin polarization of the leads. Based on a scaling approach, we predict that for parallel alignment of the magnetizations in the leads the strong-coupling limit of the Kondo effect is reached at a finite value of the magnetic field. Using an equation of motion technique, we study nonlinear transport through the dot. For parallel alignment, the zero-bias anomaly may be split even in the absence of an external magnetic field. For antiparallel spin alignment and symmetric coupling, the peak is split only in the presence of a magnetic field, but shows a characteristic asymmetry in amplitude and position.     

Quantum fluctuations and the Kondo effect in small quantum dots

We consider electron transport through quantum dots with large level spacing and charging energy. At low temperature and strong coupling to the leads, quantum fluctuations and the Kondo effect become important. They show up, e.g., as zero-bias anomalies in the current–voltage characteristics. We use a recently developed diagrammatic technique as well as a new real-time renormalization-group approach to describe charge and spin fluctuations. The latter gives rise to a Kondo-assisted enhancement of the current through the dot as seen in experiments.     

Kondo temperature in multilevel quantum dots

We develop a general method to evaluate the Kondo temperature in a multilevel quantum dot that is weakly coupled to conducting leads. Our theory reveals that the Kondo temperature is strongly enhanced when the intradot energy-level spacing is comparable or smaller than the charging energy. We propose an experiment to test our result, which consists of measuring the size dependence of the Kondo temperature.     

Entanglement switching via the Kondo effect in triple quantum dots

We consider a triple quantum dot system in a triangular geometry with one of the dots connected to metallic leads. Using Wilson’s numerical renormalization group method, we investigate quantum entanglement and its relation to the thermodynamic and transport properties in the regime where each of the dots is singly occupied on average, but with non-negligible charge fluctuations. It is shown that even in the regime of significant charge fluctuations the formation of the Kondo singlets induces switching between separable and perfectly entangled states. The quantum phase transition between unentangled and entangled states is analyzed quantitatively and the corresponding phase diagram is explained by exactly solvable spin model. In the framework of an effective model we also explain smearing of the entanglement transition for cases when the symmetry of the triple quantum dot system is relaxed.     

Entanglement and the Kondo effect in serially coupled double quantum dots

We investigate entanglement between electrons in serially coupled double quantum dots attached to noninteracting leads. In addition to local repulsion we consider the influence of capacitive inter-dot interaction. We show how the competition between extended Kondo and local singlet phases determines the ground state and thereby the entanglement. The results are additionally discussed in connection with the linear conductance through the system.     

Phonon-assisted Kondo effect in single-molecule quantum dots coupled to ferromagnetic leads

Based on the infinite-U Anderson model spin-polarized transport through the tunnel magnetoresistance (TMR) system of single-molecule quantum dot is investigated under the interplay of strong electron correlation and electron-phonon (e-ph) coupling. The spectral density and the nonlinear differential conductance are studied using the extended non-equilibrium Green's function method through calculating the dot-level splitting self-consistently. The results exhibit that a serial of peaks emerge on the two sides of the main Kondo peak for the antiparallel magnetic configuration of electrodes, while for the parallel case both the main and phonon-assisted satellite Kondo peaks all split up into two asymmetric peaks even at zero-bias. Correspondingly, the nonlinear differential conductance displays a set of satellite-peaks around the Kondo-peak in the presence of the e-ph interaction. Furthermore, extra maxima and minima appear in the TMR curve. The TMR alternates between the positive and the negative values along with the variation of bias voltage.     

Nonequilibrium transport through double quantum dots: Kondo effect versus antiferromagnetic coupling

We theoretically study the nonequilibrium transport properties of double quantum dots, in both series and parallel configurations. Our results lead to novel experimental predictions that unambiguously signal the transition from a Kondo state to an antiferromagnetic spin-singlet state, directly reflecting the physics of the two-impurity Kondo problem. We prove that the nonlinear conductance through parallel dots directly measures the exchange constant J between the spins of the dots. In serial dots, the nonlinear conductance provides an upper bound on J.     

Universality of the Kondo effect in quantum dots with ferromagnetic leads

We investigate quantum dots in clean single-wall carbon nanotubes with ferromagnetic PdNi-leads in the Kondo regime. Most of the Kondo resonances exhibit a splitting, which depends on the tunnel coupling to the leads and an external magnetic field B, but only weakly on the gate voltage. Using numerical renormalization group calculations, we demonstrate that all salient features of the data can be understood using a simple model for the magnetic properties of the leads. The magnetoconductance at zero bias and low temperature depends in a universal way on gμ(B)(B-B(c))/k(B)T(K), where T(K) is the Kondo temperature and B(c) the external field compensating the splitting.     

Two-stage Kondo effect in a quantum dot at a high magnetic field

We report a strong Kondo effect (Kondo temperature approximately 4 K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo effect in quantum dots coupled to single-channel leads.     

嵌入并联耦合双量子点介观环系统中的近藤效应

使用双杂质Anderson模型的哈密顿，从理论上研究了一个嵌入并联耦合双量子点介观环系统 , 当处在Kondo区时的基态性质, 并用slave-boson平均场方法求解了哈密顿.研究的结果表 明， 在这个系统中，当两个量子点处于强耦合时，两个量子点可以相干耦合成一个人造分 子，导致一个增强的Kondo效应和超强持续电流的出现.因此，在未来的纳米装置应用中，这 个系统具有潜在的应用价值. 关键词： 并联耦合双量子点 Kondo效应 超强持续电流     

Kondo quantum dots and the novel Kondo-doublet interaction

We analyze the interactions between two Kondo quantum dots connected to a Rashba-active quantum wire. We find that the Kondo-doublet interaction, at an interdot distance of the order of the wire Fermi length, is over an order of magnitude greater than the RKKY interaction. The effects induced on the Kondo-doublet interaction by the wire spin-orbit coupling can be used to control the quantum dots spin-spin correlation. These results imply that the widely used assumption that the RKKY is the dominant interaction between Anderson impurities must be revised.     

Ruderman-Kittel-Kasuya-Yosida and magnetic-field interactions in coupled Kondo quantum dots

We investigate theoretically the transport properties of two independent artificial Kondo impurities. They are coupled together via a tunable Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. For strong enough antiferromagnetic RKKY interaction, the impurity density of states increases with the applied in-plane magnetic-field. This effect can be used to distinguish between antiferromagnetic and ferromagnetic RKKY interactions. These results may be relevant to explain some features of recent experiments by Craig et al. [Science 304, 565 (2004)].     

Nonequilibrium Kondo effect and Andreev reflection through double quantum dots with spin-flip scattering

The Kondo effect and the Andreev reflection tunneling through a normal (ferromagnet)-double quantum dots-superconductor hybrid system is examined in the low temperature by using the nonequilibrium Green's function technique in combination with the slave-boson mean-field theory. The interplay of the Kondo physics and the Andreev bound state physics can be controlled by varying the interdot hopping strength. The Andreev differential conductance is mainly determined by the competition between Kondo states and Andreev states. The spin-polarization of the ferromagnetic electrode increases the zero-bias Kondo peak. The spin-flip scattering influences the Kondo effect and the Andreev reflection in a nontrivial way. For the ferromagnetic electrode with sufficiently large spin polarization, the negative Andreev differential conductance is found when the spin flip strength in the double quantum dots is sufficiently strong.     

Intra- and inter-shell Kondo effects in carbon nanotube quantum dots

The linear response transport properties of carbon nanotube quantum dot in the strongly correlated regime are discussed. The finite-U mean field slave boson approach is used to study many-body effects. Magnetic field can rebuilt Kondo correlations, which are destroyed by the effect of spin-orbit interaction or valley mixing. Apart from the field induced revivals of SU(2) Kondo effects of different types: spin, valley or spin-valley, also more exotic phenomena appear, such as SU(3) Kondo effect. Threefold degeneracy occurs due to the effective intervalley exchange induced by short-range part of Coulomb interaction or due to the intershell mixing. In narrow gap nanotubes the full spin-orbital degeneracy might be recovered in the absence of magnetic field opening the condition for a formation of SU(4) Kondo resonance.     

Dynamical symmetries in Kondo tunneling through complex quantum dots

Kondo tunneling reveals hidden SO(n) dynamical symmetries of evenly occupied quantum dots. As is exemplified for an experimentally realizable triple quantum dot in parallel geometry, the possible values n=3,4,5,7 can be easily tuned by gate voltages. Following construction of the corresponding o(n) algebras, scaling equations are derived and Kondo temperatures are calculated. The symmetry group for a magnetic field induced anisotropic Kondo tunneling is SU(2) or SO(4).     

Spin-dependent Kondo effect induced by Rashba spin-orbit interaction in parallel coupled double quantum dots

Electronic transport through parallel coupled double quantum dots (DQD) with Rashba spin-orbit (RSO) interaction is investigated in Kondo regime by means of the slave-boson mean field approximation at zero temperature. By the co-action of the phase factor deduced by RSO interaction and the magnetic flux penetrating the parallel DQD, an interesting spin-dependent Kondo effect emerges. The molecular state representation theory is used to obtain a detailed understanding of the spin-dependent Kondo effect. It is shown that Quantum interference between the bonding Kondo state and antibonding state, which is modulated by the RSO interaction, plays a crucial role to the density of states and the linear conductance. The magnitude of each spin component conductance can be modulated by the RSO interaction strength. The conductance of each spin component exhibits 4π-periodic function with respect to φR. Moreover, the swap operation in the parallel DQD system can be implemented by tuning the RSO interaction.