GaAs(111)衬底上生长的GaN的极性与生长方法和生长条件的关系

研究了在GaAs(111)衬底上生长的六角相GaN的极性的相关关系.在高Ⅴ/Ⅲ比的条件下用MOVPE和MOMBE方法生长的GaN的极性和GaAs衬底的极性一致;在(111)A-Ga表面上的生长层呈现Ga的极性,而在(111)B-As表面上的生长层呈现N的极性.然而,在低的Ⅴ/Ⅲ比,或采用一个AIN中间层的条件下,用HVPE和MOMBE方法在GaAs(111)B表面上生长的GaN呈现出Ga的极性.目前,其原因尚不清楚,但是这些结果表明采用HVPE生长方法或用一高温AlN阻挡层可以得到高质量的GaN.     

Simulation of Surfactant Effects on Growth of Semiconductor Hetero-Epitaxial Sb-Ge/Si(111)

A kinetic Monte Carlo simulation is performed in order to study the effect of Sb as a surfactant on the growth of Ge/Si(111). In our model the exchange mechanism between Ge and Sb atoms and the re-exchange mechanism in which the exchanged Ge adatom re-exchange with the lifted Sb atom to return to the surfactant layer, are considered. Our simulation shows the re-exchange process plays an important role on the growth mode transition in Ge/Sb/Si(111)
system. The influences of the substrate temperature and the deposition rate on the growth of Ge/Sb/Si(111) system is discussed.     

Impurities in type-II-staggered InAs/AℓSb superlattices

The physics of impurities in Type-II staggered superlattices is reviewed, with emphasis on changes of doping character, such as shallow to deep and deep to false-valence transitions, that can result from altering layer thicknesses. It is shown how some impurities can change their doping characters from "deep acceptors" (semi-insulating) to shallow donors (n-type) as functions of layer thicknesses in superlattices such as InAs/AℓSb. A particularly important case is an Aℓ_Sb antisite defect in an AℓSb layer of an InAs/AℓSb superlattice. This defect is a deep trap or "deep acceptor" in AℓSb, and a remote donor in some superlattices, depending on the layer thicknesses. It can, by itself, control the electron gas density in a superlattice structure, and so can play an important role in the development of high-speed field-effect transistors.     

Electronic surface properties of group V semimetals

We have studied the electronic surface properties of the (111) surface of group V semimetals (As, Sb, Bi) using a Green's function formalism in the tight-binding representation. We find that no surface states appear unless the surface layer relaxes, but any relaxation is enough to produce bona fide surface states.     

Size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots

We investigate size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots (QDs) grown using molecular beam epitaxy and atomic layer epitaxy. Photoluminescence (PL) spectra show that the excitonic peak corresponding to transitions from the ground electronic subband to ground heavy-hole band in CdTe/ZnTe QDs shifts to a lower energy with increasing ZnTe buffer thicknesses. This shift of the PL peak can be attributed to size variation of the CdTe QDs. In particular, carrier dynamics in CdTe QDs grown on various ZnTe buffer layer thicknesses is studied using time-resolved PL measurements. As a result, the decay time of CdTe QDs is shown to increase with increasing ZnTe buffer layer thicknesses due to the reduction of the exciton oscillator strength in the larger QDs.     

First principles prediction of the elastic,electronic and optical properties of Sn3X4 (X = P,As, Sb,Bi) compounds: Potential photovoltaic absorbers

We report a first-principles study of structural, mechanical and optoelectronic properties of the Sn₃X₄ (X = P, As, Sb, Bi) compounds. The calculations were performed using the full-potential linearized augmented plane wave approach (FP-LAPW). The structural and mechanical properties of Sn₃X₄ (X = P, As, Sb, Bi) compounds were obtained using GGA-PBE. In addition, The Tran-Blaha modified Becke-Johnson exchange potential (TB-mBJGGA) technique was used to calculated the optoelectronic properties. The calculated electronic band structures and density of states reveal a direct band gap at Γ points varied from 0.11 eV to 1.23 eV for X = P, As, Sb, Bi. The optical absorption calculations show that all compounds have high absorption coefficients about twenty times greater than that of CuInSe₂ and CdTe in the visible region. The high absorption of these materials could be attributed to the localized p-states of cation (X = P, As, Sb, Bi) in the lower region of the conduction band.     

Type III - Type I transition and strain-effect in Hg1−xCdxTeCdTe and Hg1−xZnxTeCdTe superlattices

In this paper, the results of Hg_1−xZn_xTeCdTe strained layer superlattices grown by MBE are reported, and compared to Hg_1−xCd_xTeCdTe superlattices. Both Type III and Type I Hg_1−xZn_xTeCdTe superlattices with different strain have been grown on CdTe(111)B/GaAs(100) and CdTe(100)/GaAs(100) substrates and characterized by electron, X-ray diffraction, infrared transmission and Hall measurements. The values of hole mobility between 5×10³ up to 2×10⁴cm²v⁻¹s⁻¹ at T = 23K along (111)B growth orientation and up to 4.9×10⁴cm²v⁻¹s⁻¹ at T = 5K along (100) growth orientation are obtained for Type III superlattices whereas in Type I superlattices, the hole mobility is between 200–300cm²v⁻¹s⁻¹. This drastic change in the hole mobility between Type III and Type I superlattices along with the role of the strain are discussed in this paper.     

AlO_x/LiF composite protection layer for Cr-doped(Bi,Sb)_2Te_3 quantum anomalous Hall films

We have realized robust quantum anomalous Hall samples by protecting Cr-doped(Bi,Sb)_2Te_3 topological insulator films with a combination of LiF and A1O_x capping layers.The AlO_x/LiF composite capping layer well keeps the quantum anomalous Hall states of Cr-doped(Bi,Sb)_2Te_3 films and effectively prevent them from degradation induced by ambient conditions.The progress is a key step towards the realization of the quantum phenomena in heterostructures and devices based on quantum anomalous Hall system.     

Effect of the chromium layer thickness on the morphology and optical properties of heterostructures Si(111)/(CrSi<Subscript>2</Subscript> nanocrystallites)/Si(111)

Growth and the optical properties of epitaxial heterostructures Si(111)/(CrSi₂ nanocrystallites)/Si(111) based on nanosized islands of chromium disilicide (CrSi₂) on Si(111) were studied using low-energy electron diffraction, atomic-force microscopy, and optical reflection and transmission spectroscopy. The heterostructures with thicknesses of 0.1, 0.3, 0.6, 1.0, and 1.5 nm were formed by reactive epitaxy at a temperature of 500°C followed by the epitaxial growth of silicon at 750°C. The specific features of changes in the density and sizes of CrSi₂ islands on the silicon surface were determined at T = 750°C as the chromium layer thickness was increased. It was established that, in the heterostructures with chromium layer thicknesses exceeding 0.6 nm, a small part of faceted Cr₂Si₂ nanocrystallites (NCs) emerge into near-surface region of the silicon, which is confirmed by the data from optical reflectance spectroscopy and an analysis of the spectral dependence of the absorption coefficient. A critical size of NCs is shown to exist above which their shift to the silicon surface is hampered. The decreased density of emerging NCs at chromium layer thicknesses of 1.0–1.5 nm is associated with the formation of coarser NCs within a silicon layer, which is confirmed by the data from differential reflection spectroscopy.     

Ag growth on Si(111) with an Sb surfactant investigated by scanning tunneling microscopy

We have investigated a room-temperature growth mode of ultrathin Ag films on a Si(111) surface with an Sb surfactant using STM in a UHV system. On the Sb-passivated Si surface, small sized islands were formed up to 1.1 ML. Flat Ag islands were dominant at 2.1 ML, coalescing into larger islands at 3.2 ML. Although the initial growth mode of Ag films on the Sb-terminated Si(111) surface was Volmer-Weber (island growth), the films were much more uniform than Ag growth on clean (Si(111) at the higher coverages. From the analysis of STM images of Ag films grown with and without an Sb surfactant, the uniform growth of Ag films using an Sb surfactant appears to be caused by the kinetic effects of Ag on the preadsorbed Sb layer. Our STM results indicated that Sb suppresses the surface diffusion of Ag atoms and increases the Ag-island density. The increased island density is believed to cause coalescence of Ag islands at higher coverages of Ag, resulting in the growth of atomically flat and uniform Ag islands on the Sb surfactant layer.     

Electronic structure of the BaA1-xBxO3 (A, B = Pb, Bi, Sn, Sb) alloy systems Implications for superconductivity

Coherent potential approximation studies of the electronic structure of the BaA_1-xB_xO₃ (where A and B are different combinations of the elements Pb, Bi, Sn and Sb) alloy systems have been performed with accurate tight-binding hamiltonians. The calculations show how semiconducting BaSnO₃ evolves into a metal upon alloying with Sb or Bi. Common characteristics of the densities of states are pointed out. Using the rigid muffin-tin approximation an analysis of the superconducting properties is given.     

Electronic states and vibration spectra of CdTe/ZnTe quantum dot superlattices

Electronic and vibrational states in CdTe/ZnTe quantum dot superlattices are studied using optical spectroscopy techniques (photoluminescence in a wide temperature range, IR reflection, and Raman scattering). The effect of the ZnTe barrier layer thickness on the luminescence spectra of the structures is discussed. The luminescence from electronically coupled islands is assumed to be due to spatially indirect excitons because of the specific features of the CdTe/ZnTe heterostructure band structure. A combination of quantum-dot vibrational modes, which has not been observed earlier, is detected in the Raman spectra. Analysis of the lattice IR reflection spectra shows that, in the case of large barrier thicknesses between the quantum-dot planes, elastic stresses are concentrated in the Zn_1?xCd_xTe layers, whereas in structures with lower barrier thicknesses the elastic-strain distribution exhibits a more complicated pattern.     

Influence of layer thickness on the structure and the magnetic properties of Co/Pd epitaxial multilayer films

Co/Pd epitaxial multilayer films were prepared on Pd(111)_fcc underlayers hetero-epitaxially grown on MgO(111)_B1 single-crystal substrates at room temperature by ultra-high vacuum RF magnetron sputtering. In-situ reflection high energy electron diffraction shows that the in-plane lattice spacing of Co on Pd layer gradually decreases with increasing the Co layer thickness, whereas that of Pd on Co layer remains unchanged during the Pd layer formation. The CoPd alloy phase formation is observed around the Co/Pd interface. The atomic mixing is enhanced for thinner Co and Pd layers in multilayer structure. With decreasing the Co and the Pd layer thicknesses and increasing the repetition number of Co/Pd multilayer film, stronger perpendicular magnetic anisotropy is observed. The relationships between the film structure and the magnetic properties are discussed.     

ICP-MS在城市道路尘土中非常规监测微量元素污染评价中的应用

采集了石河子城区32个站点的道路尘土样本,测定了样品中10种非常规监测微量元素(B,Be,Bi,Co,Ga,Li,Sb,Sn,Tl,V)的含量。并采用地积累指数法、元素相关性分析和主成分分析法对尘土中的微量元素污染程度和来源进行了分析。结果表明：道路尘土中微量B,Be,Bi,Co,Ga,Li,Sb,Sn,Tl和V的平均含量分别为41.11,1.68,0.52,13.58,36.26,24.91,3.37,3.64,0.42,72.66 mg·kg-1。其中,Co,Li和Tl的平均含量均低于新疆土壤元素背景值,B,Be和V的平均含量和新疆土壤元素背景值相似,Bi,Ga,Sb和Sn的平均含量高于新疆和世界土壤元素背景值。地积累指数计算结果表明：B,Be,Co,Ga,Li,Tl和V污染级数为0,说明无污染,而Sb,Bi和Sn污染较为严重(污染等级分别为2,1,1)。元素相关性分析和主成分分析多元统计方法计算结果表明,Bi,Co,Sb和Tl主要是人为来源,B,Be,Li和V主要是自然来源,而Ga和Sn可能受自然因素和人为因素的共同影响。     

Topological surface states in lead-based ternary telluride Pb(Bi(1-x)Sb(x))2Te4

We have performed angle-resolved photoemission spectroscopy on Pb(Bi(1-x)Sb(x))2Te4, which is a member of lead-based ternary tellurides and has been theoretically proposed as a candidate for a new class of three-dimensional topological insulators. In PbBi2Te4, we found a topological surface state with a hexagonally deformed Dirac-cone band dispersion, indicating that this material is a strong topological insulator with a single topological surface state at the Brillouin-zone center. Partial replacement of Bi with Sb causes a marked change in the Dirac carrier concentration, leading to the sign change of Dirac carriers from n type to p type. The Pb(Bi(1-x)Sb(x))2Te4 system with tunable Dirac carriers thus provides a new platform for investigating exotic topological phenomena.     

Crystal structure of the high pressure phases of bismuth bi iii and bi iii′ by high energy synchrotron x-ray diffraction

Abstract

This paper reports the results of a synchrotron X-ray diffraction study on the crystal structures of Bi 111 and Bi 111′ which have been known to form under high pressure but have, for a long time, been unsolved. Powdered samples were compressed in a cubic-type multi-anvil press, MAXID, and diffraction data were collected using an Imaging Plate with monochromatized radiation of an energy of 49.7 keV. It was possible to identify at 3.8 GPa forty-eight reflections for Bi I11 in the sin θ / δ range from 1.6 nm^?1 to 5.6 nm^?1, which were indexed in terms of a tetragonal unit cell with a=0.8659 nm and c═ O·4238 nm (2=10). Analysis based on the observed intensities of the reflections led to a structure in which atoms form a distorted body-centered cubic lattice. It is of the same type as the structure of the high pressure phase of antimony Sb 11. When pressure was increased across the suggested transition pressure 4.3 GPa between Bi III and Bi III′ to 6.6 GPa, no change in the diffraction pattern was observed, indicating that there is no distinction between the two phases as long as the crystal structure is concerned. Discussion is given on the sequence of high pressure phase transitions in the Group Vb elements.     

The role of substrate surface termination in the deposition of?(111)?CdTe on?(0001) sapphire

The small lattice mismatch and sixfold symmetry offered by the (0001) planes of sapphire make it an ideal substrate candidate for the deposition of (111) CdTe films. There, however, exists a wide disparity in film quality among various researchers with both single crystal and highly twinned, multidomain films being reported. We have developed a pulsed laser deposition process that enables us to deposit nearly single-domain (111) CdTe films exhibiting excellent surface morphology. Such films are deposited on as-received sapphire substrates in vacuum conditions where oxygen is readily available. If, however, film deposition is preceded by the deposition of a submonolayer of aluminum prior to film growth then a secondary CdTe domain emerges with an in-plane orientation having a 180°-in-plane offset from the first domain. These multidomain films show poor crystallographic and morphological properties, similar to what has been reported elsewhere. It is concluded that the singly terminated (0001) sapphire substrates are a prerequisite for the deposition of high-quality (111) CdTe films.     

Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer

We discuss the role of the Al interlayer in the suppression of pinhole formations and also look at the polarity transition of the AlN layers from N-polarity to Al-polarity when this Al interlayer is present. The AlN layers were grown by molecular beam epitaxy on an AlN nucleation layer. A thin Al interlayer was deposited on the initial nucleated AlN layer after the nitridation of the Al-soaked Si (111) substrates. The AlN layer with an Al interlayer showed a relatively smooth surface with a reduced density of pinholes compared with the AlN layer grown without an Al interlayer. In addition, the AlN layer with an Al interlayer showed some stacking faults in the interface between the Si substrate and the A1N layer. We also identify the polarity change of the AlN layer after the insertion of a thin Al interlayer from N-polarity to Al-polarity by chemical etching. A simple model is constructed to explain the polarity change and the pinhole suppression due to the Al interlayer.     

Towards an understanding of surfactant action in the epitaxial growth of metals: The case of Sb on Ag (111)

We address the role of surfactant adsorbates in determining changes in the homoepitaxial growth mode of metals, discussing the case of Sb on Ag (111). From ab initio calculations, we extract evidence that the mechanism operative in this system is that Sb induces an irregular shape and an increase in density of the growing Ag islands, and an ensuing increase of the number of attempts for an adatom to descend to a lower terrace. This results from a combination of peculiar properties of this system: Sb is adsorbed insubstitutional surface sites, leading to the formation of a Sb–Ag surface alloy; deposited Ag has reduced mobility on Sb-covered Ag (111), from which follows a higher nucleation probability. The island shape is irregular since the surface alloy is disordered. Surface seggregation of Sb once the growing layer is completed furthers the phenomenon for many deposited Ag layers. Our explanation of the surfactant action of Sb on Ag (111) does not require a reduction of the downstep diffusion barrier, which may, however, be a concurrent factor helpful to interlayer mass transport and layerby-layer growth.     

Analysis of Bulk and Interface Phenomena in CdTe/CdS Thin-Film Solar Cells

CdTe layers have been grown on CdS layers to produce thin-film photovoltaic devices. Because of the large lattice mismatch of roughly 10%, CdTe and CdS can only be joined at the expense of a high density of misfit dislocations. Additionally, after deposition the CdTe layer contains submicrometer sized, [111] oriented, columnar grains with a high density of stacking faults and microtwins resulting in a poor electrical performance of the p-n junction. The performance of these cells can be improved by depositing a CdCl₂ layer on the CdTe absorber layer and subsequent annealing of the stack in air. This treatment induces interdiffusion of S and Te across the interface, which results in a better lattice match. During this anneal, CdTe is subject to grain growth, recovery and recrystallization. In samples annealed for different durations after different amounts of CdCl₂ were applied, grain growth is completed during the first minutes of annealing. Subsequent diffusion of Cl is detected along the CdTe grain boundaries. The presence of Cl enhances the recrystallization of the CdTe layer, starting from the CdTe surface, while recovery of the CdTe layer, mostly by the reduction of microtwins, takes place at the interface. The simultaneous occurrence of recrystallization and recovery leads to a preferred alignment of grain boundaries in CdTe parallel to the interface. Electron beam induced current measurements show the detrimental effect of these grain boundaries on the charge carrier collection efficiency of the cell. Based on these results, a modified growth procedure is proposed.