Anomalous acoustoelectric effect and the transport properties of thin La0.67Ca0.33Mno3 films

A complex of studies of the physical properties of thin lanthanum manganite La_0.67Ca_0.33MnO₃ films were performed for a monolithic layered structure consisting of a LiNbO₃ substrate and a La_0.67Ca_0.33MnO₃ thin epitaxial film. For the first time, not only ordinary acoustoelectric (AE) current of charge carriers dragged by a surface acoustic wave, but also longitudinal anomalous AE current, which flowed in a distinguished direction independent of the direction of the surface acoustic wave propagation, was observed. The anomalous AE effect predominated close to the metal-insulator transition, whereas the odd AE effect predominated at high and low temperatures. The sign of the ordinary odd AE effect corresponded to hole conduction of the film. A theoretical analysis showed that the anomalous AE effect is due to a strong film conduction modulation caused by deformation created by the surface acoustic wave. The theoretical results were in close agreement with experiment. The temperature dependences of resistivity ρ(both in the absence of a magnetic field and in fields of up to 3 T), high-frequency magnetic susceptibility, and thermoelectric power were studied.     

用于电流传感的声表面波磁致伸缩效应

利用声表面波(SAW)磁致伸缩效应可以实现一种快速、高灵敏度的电流检测方法,但磁致伸缩薄膜内部矫顽力导致了明显的磁滞误差。磁致伸缩薄膜的栅阵化设计可以减小磁致伸缩时薄膜内部矫顽力,抑制磁滞现象,从而实现高灵敏和低迟滞误差的SAW电流检测。结合有限元和耦合模理论对沉积铁钴(FeCo)薄膜栅阵的声表面波电流传感器中的磁致伸缩效应进行分析,对传感响应进行仿真,确定优化的传感结构参数。为验证理论分析,实验研制了频率为150 MHz的声表面波电流传感器件,并结合差分振荡电路及亥姆霍兹线圈,建立传感器测试系统.实验结果表明,磁致伸缩薄膜的栅阵设计大幅降低了迟滞误差,并显著提升了传感器灵敏度。      

SAW spectral characteristics of the YZ-LiNbO3-thin-lead-film layered structure

An acousto-optical study of the effect of a lead film on propagation of high-power surface acoustic waves (SAW) along the Z direction on the Y cut of LiNbO₃ is reported. The presence of the metal film has been found to stimulate spatial oscillations of SAW components and suppress the onset of nonlinearity. If the film is more narrow than the SAW aperture, one observes considerable inflow of acoustic energy from the free surface to the film region. A study of the film-induced sound-velocity dispersion revealed it to have a linear pattern. An analysis of the results within the present theoretical models of soliton development showed that a soliton-like monopulse can form only if a very thin (～150 Å) lead film is present.     

Theoretical study on line source laser-induced surface acoustic waves in two-layer structure in ablative regime

The generation of ultrasound in film–substrate system by a laser line source is studied in the case of ablation mechanism, which can be realized by adding a liquid layer at the excitation point. The time domain displacement can be yielded by the numerical jointed inversed Laplace–Fourier transformation technique. The typical surface acoustic waves (SAW) of two layer structures, slow film on fast substrate and fast film on slow substrate, are obtained and the effect of the propagation distance and the thickness of the film on the SAW are given.     

The characteristics of surface acoustic waves on AlN/LiNbO3 substrates

The characteristics of surface-acoustic-wave (SAW) devices on various substrates were measured by a network analyzer in the temperature range from 0 to 80 °C. Based on the structure of IDT/AlN/LiNbO₃, it was revealed that the magnitude of the temperature coefficient of frequency (TCF) of a SAW on a LiNbO₃ substrate was significantly decreased due to the thickness increase of AlN thin film deposited on the LiNbO₃ substrate. The TCF of a SAW on an AlN/LiNbO₃ device was measured to be about -51 ppm/°C at h/λ=0.1, where h is the thickness of the AlN film and λ is the wavelength of the SAW. This indicates that the deposition of an AlN film on a LiNbO₃ substrate could improve the temperature stability, as compared with that of a SAW on a LiNbO₃ substrate (-73 ppm/°C). The SAW device on the ST-X quartz is shown to have a positive TCF as the AlN thin film is deposited on the surface of the ST-X quartz. In addition, the phase velocity (V_p) of the SAW on an AlN/LiNbO₃ substrate was significantly increased by the increase of AlN thickness (h/λ). Received: 14 October 2002 / Accepted: 15 October 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +886-7/525-4199, E-mail: ycc@ee.nsysu.edu.tw     

Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

An obvious weak localization correction to anomalous Hall conductance(AHC) in very thin CoFeB film is reported.We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness.When the film is thicker than 3 nm,the side jump mechanism dominates and the weak locaUzation to AHC vanishes.For very thin CoFeB films,both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect,and the weak localization correction to AHC is observed.     

The dispersion properties of surface acoustic wave devices on AlN/LiNbO3 film/substrate structure

Highly c-axis oriented aluminum nitride (AlN) films were deposited on z-cut LiNbO₃ substrates by reactive rf magnetron sputtering. The crystalline properties investigated by X-ray diffraction (XRD) revealed that AlN film with (0 0 2) preferred orientation was improved by an increase of the deposition time within the experimental range. However, the surface morphology of AlN film measured by scanning probe microscopy (SPM) showed that the roughness was getting worse with increase of deposition time. Surface acoustic wave (SAW) properties, measured by a network analyzer in the structure consisting of highly c-axis AlN films on z-cut LiNbO₃ substrates, were investigated. The phase velocity (V_P) was significantly increased by the increase of h/λ, where h is the thickness of AlN film and λ is the wavelength. However, the insertion loss (IL) of SAW filters was also increased by the increase of h/λ. Experimental results on the temperature characteristics of SAW devices are also presented.     

Multifrequency characterization of viscoelastic polymers and vapor sensing based on SAW oscillators

Simplified relations for the changes in SAW velocity and attenuation due to thin polymer coatings and vapor sorption are presented by making analytic approximations to the complex theoretical model developed earlier by Martin et al. [Anal. Chem. 66 (14) (1994) 2201–2219]. The approximate velocity relation is accurate within 4% for the film thicknesses up to 20% of the acoustic wavelength in the polymer film, and is useful for analyzing the mass loading, swelling and viscoelastic effects in SAW vapor sensors. The approximate attenuation relation is accurate within 20% for very thin films, (less than 2% of the acoustic wavelength in the film). Based on these relations, a new procedure for determination of polymer viscoelastic properties is described that exploits the frequency dependence of the velocity and attenuation perturbations, and employs multifrequency measurement on the same SAW platform. Expressions for individual contributions from the mass loading, film swelling and viscoelastic effects in SAW vapor sensors are derived, and their implications for the sensor design and operation are discussed. Also, a new SAW comb filter design is proposed that offers possibility for multimode SAW oscillator operation over a decade of frequency variation, and illustrates feasibility for experimental realization of wide bandwidth multifrequency SAW platforms.     

MOCVD法生长SAWF用ZnO/Diamond/Si多层结构

使用等离子体辅助MOCVD系统在金刚石,硅衬底上成功地制备了氧化锌多层薄膜材料,通过两步生长法对薄膜质量进行了优化。XRD测试显示优化后的样品具有c轴的择优取向生长,PL谱测试表明样品经优化后不仅深能级发射峰消失,同时紫外发射峰增强。对优化后的样品的表面测试显示出较低的表面粗糙度。比较氧化锌多层薄膜结构的声表面波频散曲线,ZnO薄膜声表面滤波器受膜厚和衬底材料的影响较大。当ZnO薄膜较薄时,在它上面的传播速度将与衬底上的传播速度接近,与其他衬底上生长的薄膜相比,以金刚石这种快声速材料为衬底的ZnO多层薄膜结构,声表面波滤波器的中心频率将提高1倍左右。     

Surface acoustic wave device properties of (B, Al)N films on 128° Y-X LiNbO3 substrate

A c-axis orientated aluminium nitride (AlN) film on a 128° Y-X lithium niobate (LiNbO₃) surface acoustic wave (SAW) device which exhibit a large electromechanical coupling coefficient (k²) and a high SAW velocity property, is needed for future communication applications. In this study, a c-axis orientated (B, Al)N film (with 2.6 at.% boron) was deposited on a 128° Y-X LiNbO₃ substrate by a co-sputtering system to further boost SAW device properties. The XRD and TEM results show that the (B, Al)N films show highly aligned columns with the c-axis perpendicular to the substrate. The hardness and Young's modulus of (B, Al)N film on 128° Y-X LiNbO₃ substrates are at least 17% and 7% larger than AlN films, respectively. From the SAW device measurement, the operation frequency characteristic of (B, Al)N film on 128° Y-X LiNbO₃ is higher than pure AlN on it. The SAW velocity also increases as (B, Al)N film thickness increases (at fixed IDT wavelength). Furthermore, the k² of (B, Al)N on the IDT/128° Y-X LiNbO₃ SAW device shows a higher value than AlN on it.     

Velocity of a SAW propagating in a 2D phononic crystal

We have studied the propagation of a surface acoustic waves (SAW), in a structure constituted by a 2D phononic film (a few micrometers thick and having lattice constants of a few hundreds of micrometers in the two directions of the propagation plane) deposited onto a homogeneous semi-infinite substrate. First, we have calculated the dispersion relations of the acoustic modes by using a plane waves expansion method. We found that the surface branch exhibits both the folding effect and a band gap for the propagation along some particular directions. This is a very interesting result which demonstrates that the effects related to the existence of the band gap (sound velocity dispersion, diffraction, refraction, ultrasound tunneling, etc.) can all appear, even if the thickness of the phononic film is much less than the penetration depth of the SAW. Then, we used an all-optical technique to monitor the spectral content of the SAW propagating along the GammaX direction in the reduced Brillouin zone. We show that a wave with frequency in the stop band, is destructively diffracted after it propagates through less than ten periods. Finally, we report on measurements of the Rayleigh wave phase velocity and we show that the transit time is independent of the distance traveled inside the phononic crystal, suggesting that tunneling trough the sample is involved.     

新型声表面波电流传感器*

将声表面波技术的快速响应特点与磁致伸缩薄膜的高磁敏特点相结合,可实现一种快速、高灵敏、稳定可靠的新型电流检测技术。传感器由双通道差分式振荡器与沉积在传感通道器件表面的声传播路径上的磁致伸缩薄膜组成。该文基于分层介质中声传播理论及磁致伸缩效应,对声表面波电流传感机理进行了分析,以实现对传感器结构的优化设计。实验研制了采用铁钴(FeCo)薄膜的声表面波电流传感器,测试结果表明,该传感器具有快速响应和高灵敏特点。为抑制磁致伸缩薄膜自身的剩磁效应所带来的高磁滞误差,采用的有效途径是将沉积的磁致伸缩薄膜进行图形化设计。实验结果表明,采用栅阵化FeCo薄膜结构的传感器表现出更高检测灵敏度、更好线性及更低的磁滞误差。     

Phase transition at a nanometer scale detected by acoustic emission within the cubic phase Pb(Zn1/3Nb2/3)O3-xPbTiO3 relaxor ferroelectrics

Pb(Zn(1/3)Nb(2/3))O3-xPbTiO(3) (x=4.5%-12%) relaxor ferroelectric crystals have been studied by means of acoustic emission (AE) in the 400-540 K temperature range. An anomalous AE activity independent of the ground state relaxor/morphotropic/ferroelectric crossover has been revealed at around 500 K, and it is associated with the "waterfall" feature related to the existence of polar nanoregions (PNRs). The 500 K AE anomaly is attributed to local martensitelike cubic-to-tetragonal ferroelectric transitions within the PNRs imbedded in a nonpolar (cubic) matrix.     

Nonlinear acoustoelectronic interaction in thin superconducting lead films

The effect of high-power surface acoustic waves (SAW) on the superconducting state of Pb films has been studied in different transverse magnetic fields. It was established that a high-intensity sound wave affects the T _c of the film and the character of the superconducting transition, and that the observed changes are the larger, the higher is the SAW intensity. It was found that high-power SAW are capable of inducing vortex depinning in the film and reducing the critical current. Various mechanisms which are responsible for the nature of these effects are discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 1753–1760 (October 1997)     

Fabrication and characteristics of a surface acoustic wave UV sensor based on ZnO thin films grown on a polycrystalline 3C-SiC buffer layer

Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) ultraviolet (UV) sensing using a magnetron sputtering system. X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO film grown on 3C-SiC/Si had a dominant c-axis orientation, a lower residual stress, and higher intensity of luminescence at 380 nm of ZnO thin film. The SAW resonator UV detector were fabricated on ZnO/Si structures with a 3C-SiC buffer layer. The SAW resonator exposed under UV illumination had a linear response with sensitivity of 85 Hz/(μW/cm²) in ZnO/3C-SiC/Si structures, as compared to 25 Hz/(μW/cm²) in ZnO/Si structures with UV intensity varied until 600 μW/cm².     

Acoustic emission upon spontaneous polarization in triglycine sulfate single crystals

We report on the results of analysis of acoustic emission (AE) under thermal action on a triglycine sulfate (NH₂CH₂COOH)₃ ? H₂SO₄ crystal. The triglycine sulfate single crystals grown from solution and not subjected to mechanical treatment are heated to a temperature above the Curie point (T_C = 49°C). During natural cooling of the crystal, a transition from the paraelectric to ferroelectric phase is accompanied by intense AE. In the temperature range ～28–30°C, an anomalous drop of the mean-square voltage in the AE signal is observed against the background of monotonic accumulation of AE events.     

Characteristics of SAW UV sensors based on a ZnO/Si structure using third harmonic mode

This paper describes the characteristics of surface acoustic wave (SAW) ultraviolet (UV) sensors fabricated from a ZnO thin film using the third harmonic mode. A ZnO thin film was used as an active layer for UV detection, and a piezoelectric layer was sputtered using magnetron sputtering. The X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO sputtered onto Si(100) was highly (002)-oriented and had good optical properties. The two-port SAW resonator was based on an inter-digital transducer (IDT)/ZnO/Si structure and was fabricated and exposed under UV light at a wavelength of 380 nm. As a result, under a UV intensity of 3 mW/cm², the SAW UV sensor was greatly shifted by 400 kHz at the third harmonic mode compared to a frequency shift of 10 kHz in the fundamental mode.     

Development of SH-SAW sensors for underwater measurement

We developed SH (shear horizontal) surface acoustic wave (SAW) sensors to detect protein molecules in liquid solutions applying a particular antibody thin film on the delay line of transverse SAW devices. The antibody investigated was human-immuno-globulin G (HigG) to hold the antigens (anti-HigG) in the protein solution to be measured. The sensor showed stable response to the mass loading effects of the anti-HigG molecules with the sensitivity up to 10.8 ng/ml/Hz.     

Anomalous Hall effect and electron transport in ferromagnetic MnBi films

The electron transport properties of highly c-axis oriented MnBi thin films of various thicknesses have been investigated. Samples are metallic but the low temperature resistivity shows an unusual T(3) dependence. Transverse Hall effect measurements show that both the ordinary and anomalous Hall coefficients decrease with decreasing temperature below 300 K, but the ordinary Hall coefficient (R(0)) undergoes a sign reversal around 105 K, where the magnetic anisotropy also changes sign. Analysis of the Hall data for various samples shows that the anomalous Hall coefficient (R(s)) exhibits a strong ρ(2) dependence, where ρ is the longitudinal resistivity.